JP2007158371A - 半導体装置の作製方法 - Google Patents
半導体装置の作製方法 Download PDFInfo
- Publication number
- JP2007158371A JP2007158371A JP2007024310A JP2007024310A JP2007158371A JP 2007158371 A JP2007158371 A JP 2007158371A JP 2007024310 A JP2007024310 A JP 2007024310A JP 2007024310 A JP2007024310 A JP 2007024310A JP 2007158371 A JP2007158371 A JP 2007158371A
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- Prior art keywords
- single crystal
- crystal silicon
- substrate
- thin film
- silicon layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 title claims description 31
- 238000004519 manufacturing process Methods 0.000 title claims description 22
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 94
- 238000000034 method Methods 0.000 claims abstract description 90
- 239000010409 thin film Substances 0.000 claims abstract description 59
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 54
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 54
- 239000010703 silicon Substances 0.000 claims abstract description 54
- 230000003647 oxidation Effects 0.000 claims abstract description 39
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 39
- 229910052736 halogen Inorganic materials 0.000 claims abstract description 7
- 150000002367 halogens Chemical class 0.000 claims abstract description 7
- 230000001590 oxidative effect Effects 0.000 claims abstract description 7
- 239000000758 substrate Substances 0.000 claims description 84
- 239000010408 film Substances 0.000 claims description 55
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 35
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 35
- 238000010438 heat treatment Methods 0.000 claims description 22
- 229910021426 porous silicon Inorganic materials 0.000 claims description 22
- 229910052739 hydrogen Inorganic materials 0.000 claims description 14
- 239000001257 hydrogen Substances 0.000 claims description 13
- 238000000059 patterning Methods 0.000 claims description 11
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 10
- 238000005498 polishing Methods 0.000 claims description 10
- 238000007743 anodising Methods 0.000 claims description 6
- 230000007547 defect Effects 0.000 abstract description 17
- 239000010410 layer Substances 0.000 description 71
- 239000012535 impurity Substances 0.000 description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- 238000000137 annealing Methods 0.000 description 6
- 230000006870 function Effects 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 239000004973 liquid crystal related substance Substances 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 238000005984 hydrogenation reaction Methods 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 3
- 239000010941 cobalt Substances 0.000 description 3
- 229910017052 cobalt Inorganic materials 0.000 description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 description 3
- 230000000087 stabilizing effect Effects 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910002808 Si–O–Si Inorganic materials 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 2
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 2
- -1 hydrogen ions Chemical class 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 230000006641 stabilisation Effects 0.000 description 2
- 238000011105 stabilization Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000001698 pyrogenic effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical class [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
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- Thin Film Transistor (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007024310A JP2007158371A (ja) | 2007-02-02 | 2007-02-02 | 半導体装置の作製方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007024310A JP2007158371A (ja) | 2007-02-02 | 2007-02-02 | 半導体装置の作製方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10174482A Division JP2000012864A (ja) | 1998-06-22 | 1998-06-22 | 半導体装置の作製方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009169722A Division JP2009246385A (ja) | 2009-07-21 | 2009-07-21 | 半導体装置及びマイクロプロセッサ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2007158371A true JP2007158371A (ja) | 2007-06-21 |
| JP2007158371A5 JP2007158371A5 (enExample) | 2007-08-02 |
Family
ID=38242210
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007024310A Withdrawn JP2007158371A (ja) | 2007-02-02 | 2007-02-02 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2007158371A (enExample) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009111372A (ja) * | 2007-10-10 | 2009-05-21 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
| JP2009141249A (ja) * | 2007-12-10 | 2009-06-25 | Semiconductor Energy Lab Co Ltd | 半導体基板及びその作製方法 |
| JP2009151293A (ja) * | 2007-11-30 | 2009-07-09 | Semiconductor Energy Lab Co Ltd | 表示装置及び表示装置の作製方法、並びに電子機器 |
| JP2011146701A (ja) * | 2009-12-17 | 2011-07-28 | Infineon Technologies Austria Ag | 酸化物層を有する半導体部品 |
| JP2020047956A (ja) * | 2011-06-22 | 2020-03-26 | ピーセミ コーポレーションｐＳｅｍｉ Ｃｏｒｐｏｒａｔｉｏｎ | 選択基板の両面に部品を有する集積回路、及びその製造方法 |
Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0242725A (ja) * | 1988-08-03 | 1990-02-13 | Hitachi Ltd | 半導体装置の製造方法 |
| JPH0379035A (ja) * | 1989-08-22 | 1991-04-04 | Nippondenso Co Ltd | Ｍｏｓトランジスタ及びその製造方法 |
| JPH04348532A (ja) * | 1991-05-27 | 1992-12-03 | Hitachi Ltd | 半導体装置およびその製造方法 |
| JPH07249749A (ja) * | 1994-03-11 | 1995-09-26 | Canon Inc | Ｓｏｉ基板の作製方法 |
| JPH09213916A (ja) * | 1996-02-06 | 1997-08-15 | Nippon Telegr & Teleph Corp <Ntt> | Ｓｏｉ基板の製造方法 |
| JPH09289323A (ja) * | 1996-04-23 | 1997-11-04 | Matsushita Electric Works Ltd | 半導体装置の製造方法 |
| JPH09293876A (ja) * | 1996-04-26 | 1997-11-11 | Canon Inc | 半導体素子基板およびその製造法、該基板を用いた半導体装置 |
| JPH10125926A (ja) * | 1996-10-15 | 1998-05-15 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| JPH10125881A (ja) * | 1996-10-18 | 1998-05-15 | Sony Corp | 張り合わせｓｏｉ基板、その作製方法及びそれに形成されたｍｏｓトランジスター |
| JPH10135468A (ja) * | 1996-10-24 | 1998-05-22 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| JPH10135475A (ja) * | 1996-10-31 | 1998-05-22 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| JPH10135350A (ja) * | 1996-11-04 | 1998-05-22 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
-
2007
- 2007-02-02 JP JP2007024310A patent/JP2007158371A/ja not_active Withdrawn
Patent Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0242725A (ja) * | 1988-08-03 | 1990-02-13 | Hitachi Ltd | 半導体装置の製造方法 |
| JPH0379035A (ja) * | 1989-08-22 | 1991-04-04 | Nippondenso Co Ltd | Ｍｏｓトランジスタ及びその製造方法 |
| JPH04348532A (ja) * | 1991-05-27 | 1992-12-03 | Hitachi Ltd | 半導体装置およびその製造方法 |
| JPH07249749A (ja) * | 1994-03-11 | 1995-09-26 | Canon Inc | Ｓｏｉ基板の作製方法 |
| JPH09213916A (ja) * | 1996-02-06 | 1997-08-15 | Nippon Telegr & Teleph Corp <Ntt> | Ｓｏｉ基板の製造方法 |
| JPH09289323A (ja) * | 1996-04-23 | 1997-11-04 | Matsushita Electric Works Ltd | 半導体装置の製造方法 |
| JPH09293876A (ja) * | 1996-04-26 | 1997-11-11 | Canon Inc | 半導体素子基板およびその製造法、該基板を用いた半導体装置 |
| JPH10125926A (ja) * | 1996-10-15 | 1998-05-15 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| JPH10125881A (ja) * | 1996-10-18 | 1998-05-15 | Sony Corp | 張り合わせｓｏｉ基板、その作製方法及びそれに形成されたｍｏｓトランジスター |
| JPH10135468A (ja) * | 1996-10-24 | 1998-05-22 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| JPH10135475A (ja) * | 1996-10-31 | 1998-05-22 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| JPH10135350A (ja) * | 1996-11-04 | 1998-05-22 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009111372A (ja) * | 2007-10-10 | 2009-05-21 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
| JP2009151293A (ja) * | 2007-11-30 | 2009-07-09 | Semiconductor Energy Lab Co Ltd | 表示装置及び表示装置の作製方法、並びに電子機器 |
| US8674368B2 (en) | 2007-11-30 | 2014-03-18 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method for manufacturing thereof |
| JP2009141249A (ja) * | 2007-12-10 | 2009-06-25 | Semiconductor Energy Lab Co Ltd | 半導体基板及びその作製方法 |
| JP2011146701A (ja) * | 2009-12-17 | 2011-07-28 | Infineon Technologies Austria Ag | 酸化物層を有する半導体部品 |
| JP2020047956A (ja) * | 2011-06-22 | 2020-03-26 | ピーセミ コーポレーションｐＳｅｍｉ Ｃｏｒｐｏｒａｔｉｏｎ | 選択基板の両面に部品を有する集積回路、及びその製造方法 |
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