JP4427777B2 - 半導体基板の製造方法 - Google Patents

半導体基板の製造方法 Download PDF

Info

Publication number
JP4427777B2
JP4427777B2 JP2002381896A JP2002381896A JP4427777B2 JP 4427777 B2 JP4427777 B2 JP 4427777B2 JP 2002381896 A JP2002381896 A JP 2002381896A JP 2002381896 A JP2002381896 A JP 2002381896A JP 4427777 B2 JP4427777 B2 JP 4427777B2
Authority
JP
Japan
Prior art keywords
wafer
active layer
heat treatment
bonded
peeling
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2002381896A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004214400A (ja
JP2004214400A5 (enExample
Inventor
昭彦 遠藤
信之 森本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumco Corp
Original Assignee
Sumco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumco Corp filed Critical Sumco Corp
Priority to JP2002381896A priority Critical patent/JP4427777B2/ja
Publication of JP2004214400A publication Critical patent/JP2004214400A/ja
Publication of JP2004214400A5 publication Critical patent/JP2004214400A5/ja
Application granted granted Critical
Publication of JP4427777B2 publication Critical patent/JP4427777B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Landscapes

  • Element Separation (AREA)
JP2002381896A 2002-12-27 2002-12-27 半導体基板の製造方法 Expired - Fee Related JP4427777B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002381896A JP4427777B2 (ja) 2002-12-27 2002-12-27 半導体基板の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002381896A JP4427777B2 (ja) 2002-12-27 2002-12-27 半導体基板の製造方法

Publications (3)

Publication Number Publication Date
JP2004214400A JP2004214400A (ja) 2004-07-29
JP2004214400A5 JP2004214400A5 (enExample) 2005-09-15
JP4427777B2 true JP4427777B2 (ja) 2010-03-10

Family

ID=32817681

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002381896A Expired - Fee Related JP4427777B2 (ja) 2002-12-27 2002-12-27 半導体基板の製造方法

Country Status (1)

Country Link
JP (1) JP4427777B2 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006261591A (ja) * 2005-03-18 2006-09-28 Fujitsu Ltd 絶縁ゲート型半導体装置の製造方法
JP4869622B2 (ja) * 2005-04-19 2012-02-08 信越半導体株式会社 貼り合わせウエーハの製造方法及びそれに用いる剥離用治具
US7767583B2 (en) * 2008-03-04 2010-08-03 Varian Semiconductor Equipment Associates, Inc. Method to improve uniformity of chemical mechanical polishing planarization
US8741740B2 (en) 2008-10-02 2014-06-03 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing SOI substrate
JP2010187373A (ja) * 2009-01-19 2010-08-26 Ngk Insulators Ltd 複合基板及びそれを用いた弾性波デバイス
KR101661361B1 (ko) * 2010-01-14 2016-09-29 엔지케이 인슐레이터 엘티디 복합 기판, 및 그것을 이용한 탄성 표면파 필터와 탄성 표면파 공진기
CN106960811A (zh) * 2016-01-12 2017-07-18 沈阳硅基科技有限公司 一种soi硅片的制备方法
JP7318580B2 (ja) * 2020-03-30 2023-08-01 信越半導体株式会社 Ｓｏｉウェーハの製造方法

Also Published As

Publication number Publication date
JP2004214400A (ja) 2004-07-29

Similar Documents

Publication Publication Date Title
JP4331593B2 (ja) 半導体材料からなるフィルムまたは層およびフィルムまたは層の製造方法
EP1045448B1 (en) A method of fabricating soi wafer by hydrogen ion delamination method
US6846718B1 (en) Method for producing SOI wafer and SOI wafer
US7763541B2 (en) Process for regenerating layer transferred wafer
US20020068419A1 (en) Semiconductor article and method of manufacturing the same
CN104488080B (zh) 混合基板的制造方法和混合基板
JPWO2005022610A1 (ja) 貼り合わせウェーハの製造方法
CN102986020A (zh) 对绝缘体基材上的硅进行精整的方法
JPWO2005027204A1 (ja) 貼り合わせウェーハおよびその製造方法
JPWO2005024925A1 (ja) Ｓｏｉウェーハの作製方法
JP4419147B2 (ja) 貼り合わせウェーハの製造方法
JP4427777B2 (ja) 半導体基板の製造方法
JP2003347176A (ja) 貼り合わせウェーハの製造方法
JP4228419B2 (ja) Ｓｏｉウエーハの製造方法およびｓｏｉウエーハ
JP2005197524A (ja) Ｓｏｉウェーハの作製方法
JP4720164B2 (ja) Ｓｏｉウェーハの製造方法
US7494899B2 (en) Method for manufacturing semiconductor substrate
CN105264641A (zh) 贴合晶圆的制造方法
JP2004281805A (ja) 半導体ウェーハの平坦化処理方法
JP2004214399A (ja) 半導体基板の製造方法およびウェーハ剥離熱処理装置
JP5292810B2 (ja) Ｓｏｉ基板の製造方法
JP2008028415A (ja) Ｓｏｉウエーハの製造方法及びｓｏｉウエーハ
JP2008205061A (ja) 半導体基板の製造方法

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20050328

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20050328

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20081211

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20090120

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090319

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20091120

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20091203

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121225

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Ref document number: 4427777

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20131225

Year of fee payment: 4

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees