JP2001338875A5 - - Google Patents
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- Publication number
- JP2001338875A5 JP2001338875A5 JP2001087240A JP2001087240A JP2001338875A5 JP 2001338875 A5 JP2001338875 A5 JP 2001338875A5 JP 2001087240 A JP2001087240 A JP 2001087240A JP 2001087240 A JP2001087240 A JP 2001087240A JP 2001338875 A5 JP2001338875 A5 JP 2001338875A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor film
- manufacturing
- amorphous semiconductor
- thin film
- film transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 claims description 20
- 238000010438 heat treatment Methods 0.000 claims description 7
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 3
- 239000010408 film Substances 0.000 claims 44
- 239000004065 semiconductor Substances 0.000 claims 37
- 238000004519 manufacturing process Methods 0.000 claims 18
- 239000010409 thin film Substances 0.000 claims 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 7
- 229910052710 silicon Inorganic materials 0.000 claims 7
- 239000010703 silicon Substances 0.000 claims 7
- 238000002425 crystallisation Methods 0.000 claims 6
- 230000008025 crystallization Effects 0.000 claims 6
- 229910052751 metal Inorganic materials 0.000 claims 6
- 239000002184 metal Substances 0.000 claims 6
- 230000000737 periodic effect Effects 0.000 claims 5
- 230000004888 barrier function Effects 0.000 claims 4
- 230000001737 promoting effect Effects 0.000 claims 4
- 230000015572 biosynthetic process Effects 0.000 claims 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical group [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 1
- 229910052581 Si3N4 Inorganic materials 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- 229910052787 antimony Inorganic materials 0.000 claims 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims 1
- 229910052785 arsenic Inorganic materials 0.000 claims 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 229910052741 iridium Inorganic materials 0.000 claims 1
- 229910052742 iron Inorganic materials 0.000 claims 1
- 239000004973 liquid crystal related substance Substances 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 229910052763 palladium Inorganic materials 0.000 claims 1
- 229910052698 phosphorus Inorganic materials 0.000 claims 1
- 239000011574 phosphorus Substances 0.000 claims 1
- 229910052697 platinum Inorganic materials 0.000 claims 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001087240A JP3819249B2 (ja) | 2001-03-26 | 2001-03-26 | 薄膜トランジスタの作製方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001087240A JP3819249B2 (ja) | 2001-03-26 | 2001-03-26 | 薄膜トランジスタの作製方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20534697A Division JP3830623B2 (ja) | 1997-07-14 | 1997-07-14 | 結晶性半導体膜の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2001338875A JP2001338875A (ja) | 2001-12-07 |
| JP2001338875A5 true JP2001338875A5 (enExample) | 2005-04-07 |
| JP3819249B2 JP3819249B2 (ja) | 2006-09-06 |
Family
ID=18942512
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001087240A Expired - Fee Related JP3819249B2 (ja) | 2001-03-26 | 2001-03-26 | 薄膜トランジスタの作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3819249B2 (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102709184B (zh) * | 2011-05-13 | 2016-08-17 | 京东方科技集团股份有限公司 | 含有多晶硅有源层的薄膜晶体管、其制造方法及阵列基板 |
-
2001
- 2001-03-26 JP JP2001087240A patent/JP3819249B2/ja not_active Expired - Fee Related
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