JP2001156295A5 - - Google Patents

Download PDF

Info

Publication number
JP2001156295A5
JP2001156295A5 JP1999339164A JP33916499A JP2001156295A5 JP 2001156295 A5 JP2001156295 A5 JP 2001156295A5 JP 1999339164 A JP1999339164 A JP 1999339164A JP 33916499 A JP33916499 A JP 33916499A JP 2001156295 A5 JP2001156295 A5 JP 2001156295A5
Authority
JP
Japan
Prior art keywords
film
insulating film
region
semiconductor film
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1999339164A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001156295A (ja
JP4514862B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP33916499A priority Critical patent/JP4514862B2/ja
Priority claimed from JP33916499A external-priority patent/JP4514862B2/ja
Publication of JP2001156295A publication Critical patent/JP2001156295A/ja
Publication of JP2001156295A5 publication Critical patent/JP2001156295A5/ja
Application granted granted Critical
Publication of JP4514862B2 publication Critical patent/JP4514862B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP33916499A 1999-11-30 1999-11-30 半導体装置の作製方法 Expired - Fee Related JP4514862B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP33916499A JP4514862B2 (ja) 1999-11-30 1999-11-30 半導体装置の作製方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP33916499A JP4514862B2 (ja) 1999-11-30 1999-11-30 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2001156295A JP2001156295A (ja) 2001-06-08
JP2001156295A5 true JP2001156295A5 (enExample) 2007-02-01
JP4514862B2 JP4514862B2 (ja) 2010-07-28

Family

ID=18324855

Family Applications (1)

Application Number Title Priority Date Filing Date
JP33916499A Expired - Fee Related JP4514862B2 (ja) 1999-11-30 1999-11-30 半導体装置の作製方法

Country Status (1)

Country Link
JP (1) JP4514862B2 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007220999A (ja) * 2006-02-17 2007-08-30 Epson Imaging Devices Corp 半導体膜の形成方法および表示パネルの製造方法
KR101318083B1 (ko) * 2006-12-29 2013-10-14 엘지디스플레이 주식회사 어레이기판 제조방법
JP2008256854A (ja) * 2007-04-03 2008-10-23 Sharp Corp 薄膜トランジスタアレイ基板、その製造方法および液晶表示装置
JP2013055080A (ja) * 2011-08-31 2013-03-21 Japan Display East Co Ltd 表示装置および表示装置の製造方法
JP2016213508A (ja) * 2016-09-07 2016-12-15 株式会社ジャパンディスプレイ 薄膜トランジスタ回路基板

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3173926B2 (ja) * 1993-08-12 2001-06-04 株式会社半導体エネルギー研究所 薄膜状絶縁ゲイト型半導体装置の作製方法及びその半導体装置
JP3377137B2 (ja) * 1994-12-26 2003-02-17 シャープ株式会社 半導体装置及びその製造方法、並びに薄膜トランジスタ及びその製造方法、並びに液晶表示装置
JPH11103070A (ja) * 1997-08-01 1999-04-13 Sony Corp 薄膜トランジスタ
JP3968484B2 (ja) * 1998-02-18 2007-08-29 ソニー株式会社 薄膜トランジスタの製造方法
US6362507B1 (en) * 1999-04-20 2002-03-26 Semiconductor Energy Laboratory Co., Ltd. Electro-optical devices in which pixel section and the driver circuit are disposed over the same substrate

Similar Documents

Publication Publication Date Title
TWI224868B (en) Method of forming poly-silicon thin film transistor
TW546846B (en) Thin film transistor and method for manufacturing the same
JPH07249779A (ja) 半導体装置の作製方法
JP2008147633A5 (enExample)
JPH07231098A (ja) 半導体装置の作製方法
JP2009528696A (ja) 非晶質シリコンのジュール加熱結晶化方法(MethodforCrystallizationofAmorphousSiliconbyJouleHeating)
JP2008252108A (ja) 半導体装置
TW200929371A (en) Fabricating method of polycrystalline silicon thin film, polycrystalline silicon thin film fabricated using the same, and thin film transistor comprising the same
JPH07131034A (ja) 半導体装置の作製方法
JPH02148831A (ja) レーザアニール方法及び薄膜半導体装置
JP2001156295A5 (enExample)
JP2961375B2 (ja) 半導体装置の製造方法
JP3359670B2 (ja) 半導体装置の作製方法
JPH11330478A5 (enExample)
JP2005523573A5 (enExample)
TW200541086A (en) Field-effect transistor and method of manufacturing same
JP3981532B2 (ja) 半導体装置の製造方法
CN106783532B (zh) 一种低温多晶硅薄膜的制备方法、薄膜晶体管、阵列基板以及液晶显示面板
TWI311213B (en) Crystallizing method for forming poly-si films and thin film transistors using same
JP2000133810A (ja) 薄膜トランジスタの製造方法及びアニール装置
JP2759411B2 (ja) 半導体装置およびその作製方法
JP2001036078A5 (enExample)
JP2003051600A (ja) 薄膜トランジスタ及びその製造方法
JP3380527B2 (ja) 半導体装置の作製方法
JPH03159116A (ja) 多結晶半導体薄膜の熱処理方法