JP2008147633A5 - - Google Patents

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Publication number
JP2008147633A5
JP2008147633A5 JP2007291240A JP2007291240A JP2008147633A5 JP 2008147633 A5 JP2008147633 A5 JP 2008147633A5 JP 2007291240 A JP2007291240 A JP 2007291240A JP 2007291240 A JP2007291240 A JP 2007291240A JP 2008147633 A5 JP2008147633 A5 JP 2008147633A5
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JP
Japan
Prior art keywords
annealing
carbon
epitaxial layer
ion implantation
atomic percent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2007291240A
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English (en)
Japanese (ja)
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JP5371229B2 (ja
JP2008147633A (ja
Filing date
Publication date
Priority claimed from US11/566,058 external-priority patent/US20080132039A1/en
Priority claimed from US11/778,212 external-priority patent/US7741200B2/en
Application filed filed Critical
Publication of JP2008147633A publication Critical patent/JP2008147633A/ja
Publication of JP2008147633A5 publication Critical patent/JP2008147633A5/ja
Application granted granted Critical
Publication of JP5371229B2 publication Critical patent/JP5371229B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2007291240A 2006-12-01 2007-11-08 シリコンと炭素を含有するエピタキシャル層の形成及び処理 Expired - Fee Related JP5371229B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US11/566,058 US20080132039A1 (en) 2006-12-01 2006-12-01 Formation and treatment of epitaxial layer containing silicon and carbon
US11/566,058 2006-12-01
US11/778,212 2007-07-16
US11/778,212 US7741200B2 (en) 2006-12-01 2007-07-16 Formation and treatment of epitaxial layer containing silicon and carbon

Publications (3)

Publication Number Publication Date
JP2008147633A JP2008147633A (ja) 2008-06-26
JP2008147633A5 true JP2008147633A5 (enExample) 2013-05-23
JP5371229B2 JP5371229B2 (ja) 2013-12-18

Family

ID=39030863

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007291240A Expired - Fee Related JP5371229B2 (ja) 2006-12-01 2007-11-08 シリコンと炭素を含有するエピタキシャル層の形成及び処理

Country Status (5)

Country Link
US (1) US7741200B2 (enExample)
EP (1) EP1928013A3 (enExample)
JP (1) JP5371229B2 (enExample)
KR (1) KR101385635B1 (enExample)
TW (1) TWI396228B (enExample)

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