JP4514862B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4514862B2
JP4514862B2 JP33916499A JP33916499A JP4514862B2 JP 4514862 B2 JP4514862 B2 JP 4514862B2 JP 33916499 A JP33916499 A JP 33916499A JP 33916499 A JP33916499 A JP 33916499A JP 4514862 B2 JP4514862 B2 JP 4514862B2
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Japan
Prior art keywords
insulating film
film
region
forming
gate
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JP33916499A
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Japanese (ja)
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JP2001156295A5 (enExample
JP2001156295A (ja
Inventor
律子 河崎
英人 北角
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP33916499A priority Critical patent/JP4514862B2/ja
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Publication of JP2001156295A5 publication Critical patent/JP2001156295A5/ja
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Publication of JP4514862B2 publication Critical patent/JP4514862B2/ja
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  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP33916499A 1999-11-30 1999-11-30 半導体装置の作製方法 Expired - Fee Related JP4514862B2 (ja)

Priority Applications (1)

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JP33916499A JP4514862B2 (ja) 1999-11-30 1999-11-30 半導体装置の作製方法

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Application Number Priority Date Filing Date Title
JP33916499A JP4514862B2 (ja) 1999-11-30 1999-11-30 半導体装置の作製方法

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JP2001156295A JP2001156295A (ja) 2001-06-08
JP2001156295A5 JP2001156295A5 (enExample) 2007-02-01
JP4514862B2 true JP4514862B2 (ja) 2010-07-28

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JP33916499A Expired - Fee Related JP4514862B2 (ja) 1999-11-30 1999-11-30 半導体装置の作製方法

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101318083B1 (ko) * 2006-12-29 2013-10-14 엘지디스플레이 주식회사 어레이기판 제조방법

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007220999A (ja) * 2006-02-17 2007-08-30 Epson Imaging Devices Corp 半導体膜の形成方法および表示パネルの製造方法
JP2008256854A (ja) * 2007-04-03 2008-10-23 Sharp Corp 薄膜トランジスタアレイ基板、その製造方法および液晶表示装置
JP2013055080A (ja) * 2011-08-31 2013-03-21 Japan Display East Co Ltd 表示装置および表示装置の製造方法
JP2016213508A (ja) * 2016-09-07 2016-12-15 株式会社ジャパンディスプレイ 薄膜トランジスタ回路基板

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3173926B2 (ja) * 1993-08-12 2001-06-04 株式会社半導体エネルギー研究所 薄膜状絶縁ゲイト型半導体装置の作製方法及びその半導体装置
JP3377137B2 (ja) * 1994-12-26 2003-02-17 シャープ株式会社 半導体装置及びその製造方法、並びに薄膜トランジスタ及びその製造方法、並びに液晶表示装置
JPH11103070A (ja) * 1997-08-01 1999-04-13 Sony Corp 薄膜トランジスタ
JP3968484B2 (ja) * 1998-02-18 2007-08-29 ソニー株式会社 薄膜トランジスタの製造方法
US6362507B1 (en) * 1999-04-20 2002-03-26 Semiconductor Energy Laboratory Co., Ltd. Electro-optical devices in which pixel section and the driver circuit are disposed over the same substrate

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101318083B1 (ko) * 2006-12-29 2013-10-14 엘지디스플레이 주식회사 어레이기판 제조방법

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