JP3819249B2 - 薄膜トランジスタの作製方法 - Google Patents

薄膜トランジスタの作製方法 Download PDF

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Publication number
JP3819249B2
JP3819249B2 JP2001087240A JP2001087240A JP3819249B2 JP 3819249 B2 JP3819249 B2 JP 3819249B2 JP 2001087240 A JP2001087240 A JP 2001087240A JP 2001087240 A JP2001087240 A JP 2001087240A JP 3819249 B2 JP3819249 B2 JP 3819249B2
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Japan
Prior art keywords
semiconductor film
film
amorphous semiconductor
manufacturing
metal element
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Expired - Fee Related
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JP2001087240A
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Japanese (ja)
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JP2001338875A (ja
JP2001338875A5 (enExample
Inventor
舜平 山崎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication of JP2001338875A5 publication Critical patent/JP2001338875A5/ja
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  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2001087240A 2001-03-26 2001-03-26 薄膜トランジスタの作製方法 Expired - Fee Related JP3819249B2 (ja)

Priority Applications (1)

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JP2001087240A JP3819249B2 (ja) 2001-03-26 2001-03-26 薄膜トランジスタの作製方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001087240A JP3819249B2 (ja) 2001-03-26 2001-03-26 薄膜トランジスタの作製方法

Related Parent Applications (1)

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JP20534697A Division JP3830623B2 (ja) 1997-07-14 1997-07-14 結晶性半導体膜の作製方法

Publications (3)

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JP2001338875A JP2001338875A (ja) 2001-12-07
JP2001338875A5 JP2001338875A5 (enExample) 2005-04-07
JP3819249B2 true JP3819249B2 (ja) 2006-09-06

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JP2001087240A Expired - Fee Related JP3819249B2 (ja) 2001-03-26 2001-03-26 薄膜トランジスタの作製方法

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Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102709184B (zh) * 2011-05-13 2016-08-17 京东方科技集团股份有限公司 含有多晶硅有源层的薄膜晶体管、其制造方法及阵列基板

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JP2001338875A (ja) 2001-12-07

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