JPH0756752B2 - 半導体メモリー装置のセンスアンプ制御回路 - Google Patents
半導体メモリー装置のセンスアンプ制御回路Info
- Publication number
- JPH0756752B2 JPH0756752B2 JP3336770A JP33677091A JPH0756752B2 JP H0756752 B2 JPH0756752 B2 JP H0756752B2 JP 3336770 A JP3336770 A JP 3336770A JP 33677091 A JP33677091 A JP 33677091A JP H0756752 B2 JPH0756752 B2 JP H0756752B2
- Authority
- JP
- Japan
- Prior art keywords
- sense amplifier
- power supply
- output
- supply voltage
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims description 17
- 238000006243 chemical reaction Methods 0.000 claims description 14
- 238000010586 diagram Methods 0.000 description 13
- 230000007423 decrease Effects 0.000 description 8
- 230000000630 rising effect Effects 0.000 description 8
- 239000000470 constituent Substances 0.000 description 3
- 230000006870 function Effects 0.000 description 2
- 239000008186 active pharmaceutical agent Substances 0.000 description 1
- 230000006399 behavior Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
- G11C7/065—Differential amplifiers of latching type
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR13279/1991 | 1991-07-31 | ||
| KR1019910013279A KR940003409B1 (ko) | 1991-07-31 | 1991-07-31 | 반도체 메모리 장치의 센스앰프 제어회로 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0541086A JPH0541086A (ja) | 1993-02-19 |
| JPH0756752B2 true JPH0756752B2 (ja) | 1995-06-14 |
Family
ID=19318120
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3336770A Expired - Fee Related JPH0756752B2 (ja) | 1991-07-31 | 1991-12-19 | 半導体メモリー装置のセンスアンプ制御回路 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US5267203A (enExample) |
| JP (1) | JPH0756752B2 (enExample) |
| KR (1) | KR940003409B1 (enExample) |
| DE (1) | DE4142065C2 (enExample) |
| FR (1) | FR2680040B1 (enExample) |
| GB (1) | GB2258329B (enExample) |
| IT (1) | IT1252592B (enExample) |
| TW (1) | TW250589B (enExample) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06267275A (ja) * | 1993-03-10 | 1994-09-22 | Fujitsu Ltd | センスアンプ制御回路及びセンスアンプ制御方法 |
| KR960009953B1 (ko) * | 1994-01-27 | 1996-07-25 | 삼성전자 주식회사 | 반도체 메모리 장치의 센스앰프 제어회로 |
| DK0688772T3 (da) * | 1994-06-16 | 1999-11-01 | Lg Chemical Ltd | Quinolincarboxylsyrederivater med 7-(4-aminomethyl-3-oxim)-pyrrolidinsubstituenter og fremgangsmåde til deres fremstilling |
| KR0121137B1 (ko) * | 1994-12-31 | 1997-12-04 | 문정환 | 센스 앰프의 구동 신호 발생 회로 |
| US5561629A (en) * | 1995-03-10 | 1996-10-01 | Xilinx, Inc. | Latching sense amplifier for a programmable logic device |
| KR0166505B1 (ko) * | 1995-08-18 | 1999-02-01 | 김주용 | 분리된 다수의 내부 전원전압을 사용하는 디램 및 감지증폭기 어레이 |
| JP3672384B2 (ja) * | 1996-07-24 | 2005-07-20 | 沖電気工業株式会社 | センス回路 |
| KR100223849B1 (ko) * | 1996-10-24 | 1999-10-15 | 구본준 | 반도체 메모리장치 |
| JP3742191B2 (ja) * | 1997-06-06 | 2006-02-01 | 株式会社東芝 | 半導体集積回路装置 |
| KR100300026B1 (ko) * | 1997-11-08 | 2001-09-03 | 김영환 | 블록디코드칼럼선택장치 |
| US6009031A (en) * | 1998-08-18 | 1999-12-28 | Advanced Array Corp | Supply line controlled sense amplifier |
| US6535426B2 (en) * | 2001-08-02 | 2003-03-18 | Stmicroelectronics, Inc. | Sense amplifier circuit and method for nonvolatile memory devices |
| KR100550632B1 (ko) * | 2003-04-30 | 2006-02-10 | 주식회사 하이닉스반도체 | 외부 전원전압의 변화에 무관하게 균일한 센싱마진시간을갖는비트라인 센싱 방법 및 그를 위한 메모리 장치 |
| JP2009199675A (ja) * | 2008-02-22 | 2009-09-03 | Seiko Instruments Inc | 不揮発性半導体記憶装置 |
| KR101855295B1 (ko) * | 2011-09-08 | 2018-05-09 | 삼성전자주식회사 | 데이터 리드회로, 이를 포함하는 불휘발성 메모리 장치 및 불휘발성 메모리 장치의 데이터 리드 방법 |
| JP7661268B2 (ja) * | 2022-03-24 | 2025-04-14 | 株式会社東芝 | センスタイミング生成回路および半導体記憶装置 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4104734A (en) * | 1977-06-30 | 1978-08-01 | Fairchild Camera And Instrument Corporation | Low voltage data retention bias circuitry for volatile memories |
| US4585955B1 (en) * | 1982-12-15 | 2000-11-21 | Tokyo Shibaura Electric Co | Internally regulated power voltage circuit for mis semiconductor integrated circuit |
| JPS59218696A (ja) * | 1983-05-26 | 1984-12-08 | Toshiba Corp | 半導体メモリ |
| JP2598412B2 (ja) * | 1987-07-10 | 1997-04-09 | 株式会社日立製作所 | 半導体記憶装置 |
| US4888503A (en) * | 1987-10-13 | 1989-12-19 | Intel Corporation | Constant current biased common gate differential sense amplifier |
| US4903237A (en) * | 1988-08-02 | 1990-02-20 | Catalyst Semiconductor, Inc. | Differential sense amplifier circuit for high speed ROMS, and flash memory devices |
| JP2883625B2 (ja) * | 1989-03-30 | 1999-04-19 | 株式会社東芝 | Ｍｏｓ型充電回路 |
| JP2789779B2 (ja) * | 1990-04-14 | 1998-08-20 | 日本電気株式会社 | メモリ装置 |
| JP3037377B2 (ja) * | 1990-08-27 | 2000-04-24 | 沖電気工業株式会社 | 半導体記憶装置 |
| US5175451A (en) * | 1990-10-08 | 1992-12-29 | Sharp Kabushiki Kaisha | Biasing circuit for sense amplifier |
-
1991
- 1991-07-31 KR KR1019910013279A patent/KR940003409B1/ko not_active Expired - Fee Related
- 1991-11-15 US US07/792,588 patent/US5267203A/en not_active Expired - Lifetime
- 1991-11-22 TW TW080109176A patent/TW250589B/zh active
- 1991-11-29 FR FR9114795A patent/FR2680040B1/fr not_active Expired - Fee Related
- 1991-12-19 DE DE4142065A patent/DE4142065C2/de not_active Expired - Fee Related
- 1991-12-19 JP JP3336770A patent/JPH0756752B2/ja not_active Expired - Fee Related
- 1991-12-27 IT ITMI913496A patent/IT1252592B/it active IP Right Grant
- 1991-12-31 GB GB9127519A patent/GB2258329B/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| ITMI913496A0 (it) | 1991-12-27 |
| ITMI913496A1 (it) | 1993-06-27 |
| FR2680040A1 (fr) | 1993-02-05 |
| US5267203A (en) | 1993-11-30 |
| IT1252592B (it) | 1995-06-19 |
| GB9127519D0 (en) | 1992-02-19 |
| DE4142065A1 (de) | 1993-02-04 |
| FR2680040B1 (fr) | 1994-05-13 |
| TW250589B (enExample) | 1995-07-01 |
| KR940003409B1 (ko) | 1994-04-21 |
| GB2258329B (en) | 1995-08-16 |
| JPH0541086A (ja) | 1993-02-19 |
| DE4142065C2 (de) | 1996-04-18 |
| KR930003147A (ko) | 1993-02-24 |
| GB2258329A (en) | 1993-02-03 |
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