GB2258329B - Semiconductor memory device having a sense amplifier control circuit - Google Patents

Semiconductor memory device having a sense amplifier control circuit

Info

Publication number
GB2258329B
GB2258329B GB9127519A GB9127519A GB2258329B GB 2258329 B GB2258329 B GB 2258329B GB 9127519 A GB9127519 A GB 9127519A GB 9127519 A GB9127519 A GB 9127519A GB 2258329 B GB2258329 B GB 2258329B
Authority
GB
United Kingdom
Prior art keywords
control circuit
memory device
semiconductor memory
sense amplifier
amplifier control
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
GB9127519A
Other languages
English (en)
Other versions
GB9127519D0 (en
GB2258329A (en
Inventor
Hong-Seon Hwang
Jong-Hyun Choi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of GB9127519D0 publication Critical patent/GB9127519D0/en
Publication of GB2258329A publication Critical patent/GB2258329A/en
Application granted granted Critical
Publication of GB2258329B publication Critical patent/GB2258329B/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/065—Differential amplifiers of latching type

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
GB9127519A 1991-07-31 1991-12-31 Semiconductor memory device having a sense amplifier control circuit Expired - Lifetime GB2258329B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910013279A KR940003409B1 (ko) 1991-07-31 1991-07-31 반도체 메모리 장치의 센스앰프 제어회로

Publications (3)

Publication Number Publication Date
GB9127519D0 GB9127519D0 (en) 1992-02-19
GB2258329A GB2258329A (en) 1993-02-03
GB2258329B true GB2258329B (en) 1995-08-16

Family

ID=19318120

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9127519A Expired - Lifetime GB2258329B (en) 1991-07-31 1991-12-31 Semiconductor memory device having a sense amplifier control circuit

Country Status (8)

Country Link
US (1) US5267203A (enExample)
JP (1) JPH0756752B2 (enExample)
KR (1) KR940003409B1 (enExample)
DE (1) DE4142065C2 (enExample)
FR (1) FR2680040B1 (enExample)
GB (1) GB2258329B (enExample)
IT (1) IT1252592B (enExample)
TW (1) TW250589B (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06267275A (ja) * 1993-03-10 1994-09-22 Fujitsu Ltd センスアンプ制御回路及びセンスアンプ制御方法
KR960009953B1 (ko) * 1994-01-27 1996-07-25 삼성전자 주식회사 반도체 메모리 장치의 센스앰프 제어회로
DK0688772T3 (da) * 1994-06-16 1999-11-01 Lg Chemical Ltd Quinolincarboxylsyrederivater med 7-(4-aminomethyl-3-oxim)-pyrrolidinsubstituenter og fremgangsmåde til deres fremstilling
KR0121137B1 (ko) * 1994-12-31 1997-12-04 문정환 센스 앰프의 구동 신호 발생 회로
US5561629A (en) * 1995-03-10 1996-10-01 Xilinx, Inc. Latching sense amplifier for a programmable logic device
KR0166505B1 (ko) * 1995-08-18 1999-02-01 김주용 분리된 다수의 내부 전원전압을 사용하는 디램 및 감지증폭기 어레이
JP3672384B2 (ja) * 1996-07-24 2005-07-20 沖電気工業株式会社 センス回路
KR100223849B1 (ko) * 1996-10-24 1999-10-15 구본준 반도체 메모리장치
JP3742191B2 (ja) * 1997-06-06 2006-02-01 株式会社東芝 半導体集積回路装置
KR100300026B1 (ko) * 1997-11-08 2001-09-03 김영환 블록디코드칼럼선택장치
US6009031A (en) * 1998-08-18 1999-12-28 Advanced Array Corp Supply line controlled sense amplifier
US6535426B2 (en) * 2001-08-02 2003-03-18 Stmicroelectronics, Inc. Sense amplifier circuit and method for nonvolatile memory devices
KR100550632B1 (ko) * 2003-04-30 2006-02-10 주식회사 하이닉스반도체 외부 전원전압의 변화에 무관하게 균일한 센싱마진시간을갖는비트라인 센싱 방법 및 그를 위한 메모리 장치
JP2009199675A (ja) * 2008-02-22 2009-09-03 Seiko Instruments Inc 不揮発性半導体記憶装置
KR101855295B1 (ko) * 2011-09-08 2018-05-09 삼성전자주식회사 데이터 리드회로, 이를 포함하는 불휘발성 메모리 장치 및 불휘발성 메모리 장치의 데이터 리드 방법
JP7661268B2 (ja) * 2022-03-24 2025-04-14 株式会社東芝 センスタイミング生成回路および半導体記憶装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4888503A (en) * 1987-10-13 1989-12-19 Intel Corporation Constant current biased common gate differential sense amplifier
US4984207A (en) * 1987-07-10 1991-01-08 Hitachi, Ltd. Semiconductor memory device
EP0453206A2 (en) * 1990-04-14 1991-10-23 Nec Corporation Memory device
EP0473360A2 (en) * 1990-08-27 1992-03-04 Oki Electric Industry Co., Ltd. Semiconductor memory device

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4104734A (en) * 1977-06-30 1978-08-01 Fairchild Camera And Instrument Corporation Low voltage data retention bias circuitry for volatile memories
US4585955B1 (en) * 1982-12-15 2000-11-21 Tokyo Shibaura Electric Co Internally regulated power voltage circuit for mis semiconductor integrated circuit
JPS59218696A (ja) * 1983-05-26 1984-12-08 Toshiba Corp 半導体メモリ
US4903237A (en) * 1988-08-02 1990-02-20 Catalyst Semiconductor, Inc. Differential sense amplifier circuit for high speed ROMS, and flash memory devices
JP2883625B2 (ja) * 1989-03-30 1999-04-19 株式会社東芝 Ｍｏｓ型充電回路
US5175451A (en) * 1990-10-08 1992-12-29 Sharp Kabushiki Kaisha Biasing circuit for sense amplifier

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4984207A (en) * 1987-07-10 1991-01-08 Hitachi, Ltd. Semiconductor memory device
US4888503A (en) * 1987-10-13 1989-12-19 Intel Corporation Constant current biased common gate differential sense amplifier
EP0453206A2 (en) * 1990-04-14 1991-10-23 Nec Corporation Memory device
EP0473360A2 (en) * 1990-08-27 1992-03-04 Oki Electric Industry Co., Ltd. Semiconductor memory device

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
IEEE Journal of solid-state circuits,Vol.24,No.5"A45-ns16- Mbit DRAM with triple-well struct"Oct'89 *

Also Published As

Publication number Publication date
JPH0756752B2 (ja) 1995-06-14
ITMI913496A0 (it) 1991-12-27
ITMI913496A1 (it) 1993-06-27
FR2680040A1 (fr) 1993-02-05
US5267203A (en) 1993-11-30
IT1252592B (it) 1995-06-19
GB9127519D0 (en) 1992-02-19
DE4142065A1 (de) 1993-02-04
FR2680040B1 (fr) 1994-05-13
TW250589B (enExample) 1995-07-01
KR940003409B1 (ko) 1994-04-21
JPH0541086A (ja) 1993-02-19
DE4142065C2 (de) 1996-04-18
KR930003147A (ko) 1993-02-24
GB2258329A (en) 1993-02-03

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