GB2253092B - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
GB2253092B
GB2253092B GB9118795A GB9118795A GB2253092B GB 2253092 B GB2253092 B GB 2253092B GB 9118795 A GB9118795 A GB 9118795A GB 9118795 A GB9118795 A GB 9118795A GB 2253092 B GB2253092 B GB 2253092B
Authority
GB
United Kingdom
Prior art keywords
memory device
semiconductor memory
semiconductor
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
GB9118795A
Other versions
GB9118795D0 (en
GB2253092A (en
Inventor
Kyu-Pil Lee
Yong-Jik Park
Yun-Seung Shin
Joon Kang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of GB9118795D0 publication Critical patent/GB9118795D0/en
Publication of GB2253092A publication Critical patent/GB2253092A/en
Application granted granted Critical
Publication of GB2253092B publication Critical patent/GB2253092B/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
GB9118795A 1991-02-25 1991-09-03 Semiconductor memory device Expired - Lifetime GB2253092B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910002988A KR930009127B1 (en) 1991-02-25 1991-02-25 Semicondcutor memory device with stacked capacitor cells

Publications (3)

Publication Number Publication Date
GB9118795D0 GB9118795D0 (en) 1991-10-16
GB2253092A GB2253092A (en) 1992-08-26
GB2253092B true GB2253092B (en) 1994-11-16

Family

ID=19311444

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9118795A Expired - Lifetime GB2253092B (en) 1991-02-25 1991-09-03 Semiconductor memory device

Country Status (8)

Country Link
US (1) US5208470A (en)
JP (1) JP2532182B2 (en)
KR (1) KR930009127B1 (en)
DE (1) DE4129130C2 (en)
FR (1) FR2673325B1 (en)
GB (1) GB2253092B (en)
IT (1) IT1250772B (en)
TW (1) TW198117B (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3212150B2 (en) * 1992-08-07 2001-09-25 株式会社日立製作所 Semiconductor device
JP3653107B2 (en) * 1994-03-14 2005-05-25 株式会社ルネサステクノロジ Semiconductor device and manufacturing method thereof
KR100190834B1 (en) * 1994-12-08 1999-06-01 다니구찌 이찌로오, 기타오카 다카시 Semiconductor device and manufacturing method thereof
TW288200B (en) * 1995-06-28 1996-10-11 Mitsubishi Electric Corp Semiconductor device and process thereof
KR100239690B1 (en) * 1996-04-30 2000-01-15 김영환 Method for forming field oxide film of semiconductor memory cell
US6072713A (en) * 1998-02-04 2000-06-06 Vlsi Technology, Inc. Data storage circuit using shared bit line and method therefor
US6021064A (en) * 1998-02-04 2000-02-01 Vlsi Technology, Inc. Layout for data storage circuit using shared bit line and method therefor
KR100292943B1 (en) 1998-03-25 2001-09-17 윤종용 Fabrication method of dynamic random access memory device
KR100464414B1 (en) * 2002-05-02 2005-01-03 삼성전자주식회사 DRAM device memory cell transistor having source/drain junction region of different junction profile connected DC node and BC node, and manufacturing method thereof
JP5191132B2 (en) * 2007-01-29 2013-04-24 三菱電機株式会社 Semiconductor device

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0216570A1 (en) * 1985-09-10 1987-04-01 Kabushiki Kaisha Toshiba Semiconductor memory device and method of manufacturing a semiconductor memory device
GB2183091A (en) * 1985-11-13 1987-05-28 Mitsubishi Electric Corp Decreasing & particle generated errors in a semiconductor memory device
EP0225757A1 (en) * 1985-11-22 1987-06-16 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory and method of manufacturing the same
EP0227381A1 (en) * 1985-12-13 1987-07-01 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory device
US4702797A (en) * 1985-12-20 1987-10-27 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing semiconductor memory device

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5574175A (en) * 1978-11-29 1980-06-04 Nec Corp Preparing interpolation type mos semiconductor device
JPS56134757A (en) * 1980-03-26 1981-10-21 Nec Corp Complementary type mos semiconductor device and its manufacture
JPS5885559A (en) * 1981-11-18 1983-05-21 Nec Corp C-mos semiconductor integrated circuit device
JPS61156862A (en) * 1984-12-28 1986-07-16 Toshiba Corp Semiconductor memory device
JPS63260065A (en) * 1987-04-17 1988-10-27 Hitachi Ltd Semiconductor memory device and its manufacture
JPS63318150A (en) * 1987-06-22 1988-12-27 Oki Electric Ind Co Ltd Manufacture of dram memory cell
JPS63318151A (en) * 1987-06-22 1988-12-27 Oki Electric Ind Co Ltd Dram memory cell
JPH01120862A (en) * 1987-11-04 1989-05-12 Oki Electric Ind Co Ltd Manufacture of semiconductor memory device
DE3918924C2 (en) * 1988-06-10 1996-03-21 Mitsubishi Electric Corp Manufacturing method for a semiconductor memory device
JPH02101769A (en) * 1988-10-11 1990-04-13 Mitsubishi Electric Corp Semiconductor storage device
JPH07114257B2 (en) * 1988-11-15 1995-12-06 三菱電機株式会社 Semiconductor device
US5068707A (en) * 1990-05-02 1991-11-26 Nec Electronics Inc. DRAM memory cell with tapered capacitor electrodes

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0216570A1 (en) * 1985-09-10 1987-04-01 Kabushiki Kaisha Toshiba Semiconductor memory device and method of manufacturing a semiconductor memory device
GB2183091A (en) * 1985-11-13 1987-05-28 Mitsubishi Electric Corp Decreasing & particle generated errors in a semiconductor memory device
EP0225757A1 (en) * 1985-11-22 1987-06-16 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory and method of manufacturing the same
EP0227381A1 (en) * 1985-12-13 1987-07-01 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory device
US4702797A (en) * 1985-12-20 1987-10-27 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing semiconductor memory device

Also Published As

Publication number Publication date
KR930009127B1 (en) 1993-09-23
DE4129130C2 (en) 1995-03-23
GB9118795D0 (en) 1991-10-16
GB2253092A (en) 1992-08-26
IT1250772B (en) 1995-04-21
JP2532182B2 (en) 1996-09-11
TW198117B (en) 1993-01-11
FR2673325B1 (en) 1997-03-14
JPH04278579A (en) 1992-10-05
KR920017249A (en) 1992-09-26
ITRM910657A0 (en) 1991-09-03
US5208470A (en) 1993-05-04
ITRM910657A1 (en) 1992-08-26
FR2673325A1 (en) 1992-08-28
DE4129130A1 (en) 1992-09-03

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Legal Events

Date Code Title Description
PE20 Patent expired after termination of 20 years

Expiry date: 20110902