JPS63318151A - Dram memory cell - Google Patents
Dram memory cellInfo
- Publication number
- JPS63318151A JPS63318151A JP62153436A JP15343687A JPS63318151A JP S63318151 A JPS63318151 A JP S63318151A JP 62153436 A JP62153436 A JP 62153436A JP 15343687 A JP15343687 A JP 15343687A JP S63318151 A JPS63318151 A JP S63318151A
- Authority
- JP
- Japan
- Prior art keywords
- capacitor
- lower electrode
- formed
- capacitor lower
- oxide film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000015654 memory Effects 0 abstract title 2
- 239000003990 capacitor Substances 0 abstract 7
- 239000010408 films Substances 0 abstract 6
- 239000010410 layers Substances 0 abstract 4
- AHKZTVQIVOEVFO-UHFFFAOYSA-N oxide(2-) Chemical compound data:image/svg+xml;base64,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 data:image/svg+xml;base64,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 [O-2] AHKZTVQIVOEVFO-UHFFFAOYSA-N 0 abstract 3
- 239000000758 substrates Substances 0 abstract 3
- 229910052710 silicon Inorganic materials 0 abstract 2
- 239000010703 silicon Substances 0 abstract 2
- 230000001965 increased Effects 0 abstract 1
- 238000003860 storage Methods 0 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
- H01L27/108—Dynamic random access memory structures
- H01L27/10805—Dynamic random access memory structures with one-transistor one-capacitor memory cells
- H01L27/10808—Dynamic random access memory structures with one-transistor one-capacitor memory cells the storage electrode stacked over transistor
Abstract
PURPOSE:To increase the charge storage capacity by increasing the junction capacity only in the diffused layer part connected to a capacitor lower electrode. CONSTITUTION:A field oxide film 22 is formed in a non-active region on a P type silicon substrate 21 while a gate oxide film 23, a gate electrode 24 and a pair of N type diffused layers 25a, 25b are formed in an active region to constitute a transistor. A part of the N type diffused layer 25b is connected to a capacitor lower electrode 28 on an insulating film 26 through a selfcontact 27 as an opening made in overall surface of the insulating film 26 and the gate oxide film 23 on the substrate 21 and then a capacitor dielectric film 28 and a capacitor upper electrode 30 are arranged on the capacitor lower electrode 28 to constitute a memory capacitor. Furthermore, in the P type silicon substrate 21, an impurity region 31 is formed only below one N type diffused layer 25b connected to the capacitor lower electrode 28.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62153436A JPS63318151A (en) | 1987-06-22 | 1987-06-22 | Dram memory cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62153436A JPS63318151A (en) | 1987-06-22 | 1987-06-22 | Dram memory cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63318151A true JPS63318151A (en) | 1988-12-27 |
Family
ID=15562481
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62153436A Pending JPS63318151A (en) | 1987-06-22 | 1987-06-22 | Dram memory cell |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63318151A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04278579A (en) * | 1991-02-25 | 1992-10-05 | Samsung Electron Co Ltd | Manufacture of dynamic memory cell using stacked capacitor |
| US5276344A (en) * | 1990-04-27 | 1994-01-04 | Mitsubishi Denki Kabushiki Kaisha | Field effect transistor having impurity regions of different depths and manufacturing method thereof |
| US5659191A (en) * | 1990-05-01 | 1997-08-19 | Mitsubishi Denki Kabushiki Kaisha | DRAM having peripheral circuitry in which source-drain interconnection contact of a MOS transistor is made small by utilizing a pad layer and manufacturing method thereof |
-
1987
- 1987-06-22 JP JP62153436A patent/JPS63318151A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5276344A (en) * | 1990-04-27 | 1994-01-04 | Mitsubishi Denki Kabushiki Kaisha | Field effect transistor having impurity regions of different depths and manufacturing method thereof |
| US5489791A (en) * | 1990-04-27 | 1996-02-06 | Mitsubishi Denki Kabushiki Kaisha | Field effect transistor having impurity regions of different depths and manufacturing method thereof |
| US5672533A (en) * | 1990-04-27 | 1997-09-30 | Mitsubishi Denki Kabushiki Kaisha | Field effect transistor having impurity regions of different depths and manufacturing method thereof |
| US5659191A (en) * | 1990-05-01 | 1997-08-19 | Mitsubishi Denki Kabushiki Kaisha | DRAM having peripheral circuitry in which source-drain interconnection contact of a MOS transistor is made small by utilizing a pad layer and manufacturing method thereof |
| US5949110A (en) * | 1990-05-01 | 1999-09-07 | Mitsubishi Denki Kabushiki Kaisha | DRAM having peripheral circuitry in which source-drain interconnection contact of a MOS transistor is made small by utilizing a pad layer and manufacturing method thereof |
| JPH04278579A (en) * | 1991-02-25 | 1992-10-05 | Samsung Electron Co Ltd | Manufacture of dynamic memory cell using stacked capacitor |
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