DE69222379D1 - Schreibsteuerschaltung angewendet in einem nichtlöschbaren Halbleiterspeichergerät - Google Patents
Schreibsteuerschaltung angewendet in einem nichtlöschbaren HalbleiterspeichergerätInfo
- Publication number
- DE69222379D1 DE69222379D1 DE69222379T DE69222379T DE69222379D1 DE 69222379 D1 DE69222379 D1 DE 69222379D1 DE 69222379 T DE69222379 T DE 69222379T DE 69222379 T DE69222379 T DE 69222379T DE 69222379 D1 DE69222379 D1 DE 69222379D1
- Authority
- DE
- Germany
- Prior art keywords
- control circuit
- memory device
- semiconductor memory
- write control
- circuit applied
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
- G05F3/242—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/26—Current mirrors
- G05F3/262—Current mirrors using field-effect transistors only
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/30—Power supply circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Nonlinear Science (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Read Only Memory (AREA)
- Dram (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18644091A JP3247402B2 (ja) | 1991-07-25 | 1991-07-25 | 半導体装置及び不揮発性半導体記憶装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69222379D1 true DE69222379D1 (de) | 1997-10-30 |
DE69222379T2 DE69222379T2 (de) | 1998-02-19 |
Family
ID=16188487
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69222379T Expired - Lifetime DE69222379T2 (de) | 1991-07-25 | 1992-07-24 | Schreibsteuerschaltung angewendet in einem nichtlöschbaren Halbleiterspeichergerät |
DE69230346T Expired - Lifetime DE69230346T2 (de) | 1991-07-25 | 1992-07-24 | Konstantspannungsschaltung |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69230346T Expired - Lifetime DE69230346T2 (de) | 1991-07-25 | 1992-07-24 | Konstantspannungsschaltung |
Country Status (5)
Country | Link |
---|---|
US (1) | US5253201A (de) |
EP (2) | EP0785494B1 (de) |
JP (1) | JP3247402B2 (de) |
KR (1) | KR950003346B1 (de) |
DE (2) | DE69222379T2 (de) |
Families Citing this family (41)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3712083B2 (ja) * | 1995-11-28 | 2005-11-02 | 株式会社ルネサステクノロジ | 内部電源電位供給回路及び半導体装置 |
JPH05182461A (ja) * | 1992-01-07 | 1993-07-23 | Nec Corp | 半導体メモリ装置 |
JP3385622B2 (ja) * | 1992-01-30 | 2003-03-10 | 富士通株式会社 | スタティックram |
JP2831914B2 (ja) * | 1992-09-30 | 1998-12-02 | 株式会社東芝 | 半導体集積回路装置 |
US5394077A (en) * | 1993-04-30 | 1995-02-28 | Kabushiki Kaisha Toshiba | Internal power supply circuit for use in a semiconductor device |
US5367213A (en) * | 1993-06-09 | 1994-11-22 | Micron Semiconductor, Inc. | P-channel sense amplifier pull-up circuit incorporating a voltage comparator for use in DRAM memories having non-bootstrapped word lines |
JP3305827B2 (ja) * | 1993-09-07 | 2002-07-24 | 株式会社東芝 | 半導体集積回路 |
SG47058A1 (en) * | 1993-09-10 | 1998-03-20 | Intel Corp | Circuitry and method for selecting a drain programming voltage for a nonvolatile memory |
EP0661716B1 (de) * | 1993-12-31 | 1999-07-21 | STMicroelectronics S.r.l. | Spannungsregler für nichtflüchtige Halbleiterspeicheranordnungen |
DE69328253T2 (de) * | 1993-12-31 | 2000-09-14 | St Microelectronics Srl | Spannungsregler zum Programmieren nichtflüchtiger und elektrisch programmierbarer Speicherzellen |
DE69325278T2 (de) * | 1993-12-31 | 1999-11-11 | St Microelectronics Srl | Nichtflüchtige, elektrisch programmierbare Halbleiterspeicheranordnung mit einem Spannungsregler |
FR2718273B1 (fr) * | 1994-03-31 | 1996-05-24 | Sgs Thomson Microelectronics | Mémoire intégrée avec circuit de maintien de la tension de colonne. |
JP3563452B2 (ja) * | 1994-08-10 | 2004-09-08 | 株式会社東芝 | セル閾値分布検知回路およびセル閾値分布検知方法 |
GB9417264D0 (en) * | 1994-08-26 | 1994-10-19 | Inmos Ltd | Memory device |
JP3133917B2 (ja) * | 1995-05-02 | 2001-02-13 | 矢崎総業株式会社 | ステアリングホイールと回転コネクタとの結合構造 |
KR100218244B1 (ko) * | 1995-05-27 | 1999-09-01 | 윤종용 | 불휘발성 반도체 메모리의 데이터 독출회로 |
CZ297910B6 (cs) * | 1995-06-07 | 2007-04-25 | Intel Corporation | Napetový spínací obvod |
WO1997022971A1 (en) * | 1995-12-20 | 1997-06-26 | Intel Corporation | A negative voltage switch architecture for a nonvolatile memory |
US5642310A (en) * | 1996-02-02 | 1997-06-24 | Integrated Silicon Solution Inc. | System and method for controlling source current and voltage during flash memory erase operations |
EP0809256A3 (de) * | 1996-05-21 | 1999-04-14 | Information Storage Devices, Inc. | Verfahren und Schaltkreis zum linearisierten Auslesen einer analogen Schwebegatterspeicherzelle |
JP3519547B2 (ja) * | 1996-06-24 | 2004-04-19 | 株式会社東芝 | 中間電圧発生回路及びこれを有する不揮発性半導体メモリ |
JP3039458B2 (ja) * | 1997-07-07 | 2000-05-08 | 日本電気株式会社 | 不揮発性半導体メモリ |
EP0905898B1 (de) * | 1997-09-25 | 2002-10-30 | Siemens Aktiengesellschaft | Verbessertes Gerät zur Stromimpulserzeugung in Abwärts-Spannungswandlern |
TW420806B (en) * | 1998-03-06 | 2001-02-01 | Sanyo Electric Co | Non-volatile semiconductor memory device |
JP3362661B2 (ja) * | 1998-03-11 | 2003-01-07 | 日本電気株式会社 | 不揮発性半導体記憶装置 |
JP3398039B2 (ja) * | 1998-03-26 | 2003-04-21 | 三洋電機株式会社 | 半導体メモリ装置の書き込み制御回路 |
US6297671B1 (en) * | 1998-09-01 | 2001-10-02 | Texas Instruments Incorporated | Level detection by voltage addition/subtraction |
US6128221A (en) * | 1998-09-10 | 2000-10-03 | Taiwan Semiconductor Manufacturing Co., Ltd. | Circuit and programming method for the operation of flash memories to prevent programming disturbances |
US6028790A (en) * | 1999-01-07 | 2000-02-22 | Macronix International Co., Ltd. | Method and device for programming a non-volatile memory cell by controlling source current pulldown rate |
KR100362700B1 (ko) * | 2000-02-03 | 2002-11-27 | 삼성전자 주식회사 | 반도체 메모리 장치의 전압 레귤레이터 회로 |
US6452152B1 (en) * | 2000-02-22 | 2002-09-17 | Pixim, Inc. | Sense amplifier having a precision analog reference level for use with image sensors |
DE10014385B4 (de) * | 2000-03-23 | 2005-12-15 | Infineon Technologies Ag | CMOS-Spannungsteiler |
FR2838840B1 (fr) * | 2002-04-23 | 2005-04-01 | St Microelectronics Sa | Comparateur de tension d'alimentation |
DE60226987D1 (de) * | 2002-12-30 | 2008-07-17 | St Microelectronics Srl | Verfahren zur Stabilisierung der Drain-Spannung in einem nichtflüchtigen Speicher mit mehreren Zuständen und zugehörige Speichervorrichtung |
US7180123B2 (en) * | 2003-07-21 | 2007-02-20 | Macronix International Co., Ltd. | Method for programming programmable eraseless memory |
US6933769B2 (en) * | 2003-08-26 | 2005-08-23 | Micron Technology, Inc. | Bandgap reference circuit |
US7154794B2 (en) * | 2004-10-08 | 2006-12-26 | Lexmark International, Inc. | Memory regulator system with test mode |
JP5259505B2 (ja) | 2009-06-26 | 2013-08-07 | 株式会社東芝 | 半導体記憶装置 |
EP2498258B1 (de) * | 2011-03-11 | 2016-01-13 | eMemory Technology Inc. | Nichtflüchtige Speichervorrichtung mit Programmierstrombegrenzung und zugehöriges Verfahren |
JP5966402B2 (ja) * | 2012-02-10 | 2016-08-10 | 凸版印刷株式会社 | 半導体集積回路 |
JP6205238B2 (ja) | 2013-10-25 | 2017-09-27 | エスアイアイ・セミコンダクタ株式会社 | 基準電圧発生装置 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4630238A (en) * | 1983-10-14 | 1986-12-16 | Fujitsu Limited | Semiconductor memory device |
EP0187375B1 (de) * | 1984-12-25 | 1991-07-31 | Kabushiki Kaisha Toshiba | Nichtflüchtige Halbleiterspeicheranordnung |
US4847550A (en) * | 1987-01-16 | 1989-07-11 | Hitachi, Ltd. | Semiconductor circuit |
US4837459A (en) * | 1987-07-13 | 1989-06-06 | International Business Machines Corp. | CMOS reference voltage generation |
JPH081759B2 (ja) * | 1987-11-24 | 1996-01-10 | 株式会社東芝 | 不揮発性メモリ |
US4858186A (en) * | 1988-01-12 | 1989-08-15 | Intle Corporation | A circuit for providing a load for the charging of an EPROM cell |
KR910007785B1 (ko) * | 1988-12-20 | 1991-10-02 | 삼성전자 주식회사 | 전원공급전압 변동에 대해 안정한 씨모스 입력 버퍼회로 |
JPH0814993B2 (ja) * | 1989-01-13 | 1996-02-14 | 株式会社東芝 | 半導体記憶装置 |
GB8913439D0 (en) * | 1989-06-12 | 1989-08-02 | Inmos Ltd | Current mirror circuit |
JP2595781B2 (ja) * | 1990-07-13 | 1997-04-02 | 日本電気株式会社 | 半導体記憶装置 |
-
1991
- 1991-07-25 JP JP18644091A patent/JP3247402B2/ja not_active Expired - Lifetime
-
1992
- 1992-07-24 EP EP97102441A patent/EP0785494B1/de not_active Expired - Lifetime
- 1992-07-24 DE DE69222379T patent/DE69222379T2/de not_active Expired - Lifetime
- 1992-07-24 US US07/917,953 patent/US5253201A/en not_active Expired - Lifetime
- 1992-07-24 DE DE69230346T patent/DE69230346T2/de not_active Expired - Lifetime
- 1992-07-24 EP EP92112728A patent/EP0525679B1/de not_active Expired - Lifetime
- 1992-07-25 KR KR1019920013336A patent/KR950003346B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP0785494B1 (de) | 1999-11-24 |
KR930003155A (ko) | 1993-02-24 |
EP0785494A2 (de) | 1997-07-23 |
DE69222379T2 (de) | 1998-02-19 |
US5253201A (en) | 1993-10-12 |
DE69230346T2 (de) | 2000-04-20 |
EP0525679A3 (de) | 1995-02-22 |
DE69230346D1 (de) | 1999-12-30 |
EP0785494A3 (de) | 1997-08-20 |
JPH0528777A (ja) | 1993-02-05 |
JP3247402B2 (ja) | 2002-01-15 |
KR950003346B1 (ko) | 1995-04-10 |
EP0525679B1 (de) | 1997-09-24 |
EP0525679A2 (de) | 1993-02-03 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8320 | Willingness to grant licences declared (paragraph 23) | ||
R071 | Expiry of right |
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