JPH0586000B2 - - Google Patents

Info

Publication number
JPH0586000B2
JPH0586000B2 JP58243807A JP24380783A JPH0586000B2 JP H0586000 B2 JPH0586000 B2 JP H0586000B2 JP 58243807 A JP58243807 A JP 58243807A JP 24380783 A JP24380783 A JP 24380783A JP H0586000 B2 JPH0586000 B2 JP H0586000B2
Authority
JP
Japan
Prior art keywords
circuit
signal
current
transistor
transistors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58243807A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60136084A (ja
Inventor
Shuichi Myaoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP58243807A priority Critical patent/JPS60136084A/ja
Priority to KR1019840008079A priority patent/KR930008575B1/ko
Priority to GB08431943A priority patent/GB2154086B/en
Priority to DE19843447723 priority patent/DE3447723A1/de
Publication of JPS60136084A publication Critical patent/JPS60136084A/ja
Priority to US07/492,329 priority patent/US5111432A/en
Priority to HK402/90A priority patent/HK40290A/xx
Priority to US07/832,334 priority patent/US5265060A/en
Priority to US08/124,582 priority patent/US5373474A/en
Publication of JPH0586000B2 publication Critical patent/JPH0586000B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
    • G11C7/1057—Data output buffers, e.g. comprising level conversion circuits, circuits for adapting load
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/66—Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Logic Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP58243807A 1983-12-26 1983-12-26 半導体集積回路装置 Granted JPS60136084A (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP58243807A JPS60136084A (ja) 1983-12-26 1983-12-26 半導体集積回路装置
KR1019840008079A KR930008575B1 (ko) 1983-12-26 1984-12-18 저소비 전력 구성의 반도체 집적회로 장치
GB08431943A GB2154086B (en) 1983-12-26 1984-12-18 Semiconductor integrated circuit device with power consumption reducing arrangement
DE19843447723 DE3447723A1 (de) 1983-12-26 1984-12-21 Integrierte halbleiterschaltung
US07/492,329 US5111432A (en) 1983-12-26 1990-03-12 Semiconductor integrated circuit device with power consumption reducing arrangement
HK402/90A HK40290A (en) 1983-12-26 1990-05-24 Semiconductor integrated circuit device with power consumption reducing arrangement
US07/832,334 US5265060A (en) 1983-12-26 1992-02-07 Semiconductor integrated circuit device with power consumption reducing arrangement
US08/124,582 US5373474A (en) 1983-12-26 1993-09-22 Semiconductor integrated circuit device with power consumption reducing arrangement

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58243807A JPS60136084A (ja) 1983-12-26 1983-12-26 半導体集積回路装置

Publications (2)

Publication Number Publication Date
JPS60136084A JPS60136084A (ja) 1985-07-19
JPH0586000B2 true JPH0586000B2 (en, 2012) 1993-12-09

Family

ID=17109225

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58243807A Granted JPS60136084A (ja) 1983-12-26 1983-12-26 半導体集積回路装置

Country Status (6)

Country Link
US (1) US5111432A (en, 2012)
JP (1) JPS60136084A (en, 2012)
KR (1) KR930008575B1 (en, 2012)
DE (1) DE3447723A1 (en, 2012)
GB (1) GB2154086B (en, 2012)
HK (1) HK40290A (en, 2012)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5265060A (en) * 1983-12-26 1993-11-23 Hitachi, Ltd. Semiconductor integrated circuit device with power consumption reducing arrangement
JPH0795395B2 (ja) * 1984-02-13 1995-10-11 株式会社日立製作所 半導体集積回路
JPS613390A (ja) * 1984-06-15 1986-01-09 Hitachi Ltd 記憶装置
JP2598412B2 (ja) * 1987-07-10 1997-04-09 株式会社日立製作所 半導体記憶装置
JPH0817036B2 (ja) * 1988-10-06 1996-02-21 日本電気株式会社 半導体メモリ回路
EP0455834A4 (en) * 1989-11-21 1992-06-03 Fujitsu Limited Sense amplifier control circuit
US5281873A (en) * 1989-11-21 1994-01-25 Fujitsu Limited Sense amplifier control circuit
JP2646850B2 (ja) * 1990-11-30 1997-08-27 日本電気株式会社 半導体メモリ回路
KR930017033A (ko) * 1992-01-17 1993-08-30 가나이 스토무 반도체 기억장치
WO1993018412A1 (en) * 1992-03-13 1993-09-16 Silicon Storage Technology, Inc. A sensing circuit for a floating gate memory device
US5594697A (en) * 1994-06-28 1997-01-14 Matsushita Electric Industrial Co., Ltd. Semiconductor device
TW324101B (en) * 1995-12-21 1998-01-01 Hitachi Ltd Semiconductor integrated circuit and its working method

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1600222A (en, 2012) * 1968-12-31 1970-07-20
GB1252362A (en, 2012) * 1969-03-11 1971-11-03
US3601628A (en) * 1969-06-25 1971-08-24 Texas Instruments Inc Precharge mos-bipolar output buffer
US3601630A (en) * 1969-06-26 1971-08-24 Texas Instruments Inc Mos circuit with bipolar emitter-follower output
JPS4979793A (en, 2012) * 1972-12-08 1974-08-01
US3870901A (en) * 1973-12-10 1975-03-11 Gen Instrument Corp Method and apparatus for maintaining the charge on a storage node of a mos circuit
US4090254A (en) * 1976-03-01 1978-05-16 International Business Machines Corporation Charge injector transistor memory
US4096584A (en) * 1977-01-31 1978-06-20 Intel Corporation Low power/high speed static ram
JPS5570993A (en) * 1978-11-24 1980-05-28 Hitachi Ltd Memory circuit
JPS5596158A (en) * 1979-01-16 1980-07-22 Olympus Optical Co Medicating tube
JPS5658193A (en) * 1979-10-16 1981-05-21 Nec Corp Semiconductor memory device
JPS6028076B2 (ja) * 1980-12-25 1985-07-02 富士通株式会社 半導体メモリの書込み回路
JPS57198594A (en) * 1981-06-01 1982-12-06 Hitachi Ltd Semiconductor storage device
JPS57208690A (en) * 1981-06-19 1982-12-21 Hitachi Ltd Semiconductor storage device
JPS5826392A (ja) * 1981-08-11 1983-02-16 Toshiba Corp Ｍｏｓメモリ用センス回路
JPS58209212A (ja) * 1982-05-31 1983-12-06 Hitachi Ltd トランジスタ回路
JPH0648595B2 (ja) * 1982-08-20 1994-06-22 株式会社東芝 半導体記憶装置のセンスアンプ
JPS5956292A (ja) * 1982-09-24 1984-03-31 Hitachi Ltd 半導体記憶装置
JPS5968889A (ja) * 1982-10-08 1984-04-18 Toshiba Corp 半導体記憶装置
JPS59203296A (ja) * 1983-04-30 1984-11-17 Toshiba Corp 半導体記憶装置
US4604533A (en) * 1982-12-28 1986-08-05 Tokyo Shibaura Denki Kabushiki Kaisha Sense amplifier

Also Published As

Publication number Publication date
JPS60136084A (ja) 1985-07-19
HK40290A (en) 1990-06-01
GB2154086B (en) 1988-09-21
KR850005171A (ko) 1985-08-21
KR930008575B1 (ko) 1993-09-09
DE3447723A1 (de) 1985-07-04
US5111432A (en) 1992-05-05
GB2154086A (en) 1985-08-29
GB8431943D0 (en) 1985-01-30

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