JPS5658193A - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
JPS5658193A
JPS5658193A JP13312079A JP13312079A JPS5658193A JP S5658193 A JPS5658193 A JP S5658193A JP 13312079 A JP13312079 A JP 13312079A JP 13312079 A JP13312079 A JP 13312079A JP S5658193 A JPS5658193 A JP S5658193A
Authority
JP
Japan
Prior art keywords
digit
transistors
qwc1
mis
flop
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13312079A
Other languages
Japanese (ja)
Other versions
JPS6331879B2 (en
Inventor
Joji Nokubo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP13312079A priority Critical patent/JPS5658193A/en
Publication of JPS5658193A publication Critical patent/JPS5658193A/en
Publication of JPS6331879B2 publication Critical patent/JPS6331879B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)

Abstract

PURPOSE:To form the memory cell consisting of the flip-flop with the MIS-T and other peripheral circuits with the bipolar transistors respectively, thus realizing a large-capacity and high-speed semiconductor memory device having the merits of the memory cell and the peripheral circuit. CONSTITUTION:The memory cells C11, C12, C21 and C22 consisting of the flip-flop in which the gate and the drain of the MIS-T are connected in cross to each other are arranged in the directions of the word and the digit each. Thus a cell matrix is obtained. The digit drivers D11 and D12 are formed with the bipolar transistors. Then the digit lines D1 and D2 are connected to the emitters of the transistors QWC1 and QWC1' receiving the control lines WC and WC from the write/read circuit B at the base plus the transistors QD1 and QD1' receiving the digit selection signal DS1 at the base each. Thus the driving is possible for the digit line of a large capacity. The reading data is sensed by the sense amplifier A.
JP13312079A 1979-10-16 1979-10-16 Semiconductor memory device Granted JPS5658193A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13312079A JPS5658193A (en) 1979-10-16 1979-10-16 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13312079A JPS5658193A (en) 1979-10-16 1979-10-16 Semiconductor memory device

Publications (2)

Publication Number Publication Date
JPS5658193A true JPS5658193A (en) 1981-05-21
JPS6331879B2 JPS6331879B2 (en) 1988-06-27

Family

ID=15097250

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13312079A Granted JPS5658193A (en) 1979-10-16 1979-10-16 Semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS5658193A (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0104657A2 (en) * 1982-09-29 1984-04-04 Hitachi, Ltd. Semiconductor integrated circuit device
JPS5978554A (en) * 1982-10-27 1984-05-07 Hitachi Ltd Semiconductor integrated circuit device
DE3447723A1 (en) * 1983-12-26 1985-07-04 Hitachi, Ltd., Tokio/Tokyo INTEGRATED SEMICONDUCTOR CIRCUIT
JPS60136989A (en) * 1983-12-26 1985-07-20 Hitachi Ltd Write circuit of semiconductor storage device
DE3504930A1 (en) * 1984-02-13 1985-08-14 Hitachi, Ltd., Tokio/Tokyo INTEGRATED SEMICONDUCTOR CIRCUIT
JPS61278098A (en) * 1985-06-03 1986-12-08 Nippon Telegr & Teleph Corp <Ntt> Memory circuit
JPS6236796A (en) * 1985-08-10 1987-02-17 Nippon Telegr & Teleph Corp <Ntt> Semiconductor memory
JPS62231491A (en) * 1986-03-31 1987-10-12 Fujitsu Ltd Semiconductor storage device
JPS63244878A (en) * 1987-03-31 1988-10-12 Toshiba Corp Semiconductor memory device
JPH04212790A (en) * 1991-02-13 1992-08-04 Hitachi Ltd Semiconductor integrated circuit
JPH0689585A (en) * 1993-01-13 1994-03-29 Hitachi Ltd Semiconductor memory

Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5696715A (en) * 1982-09-29 1997-12-09 Hitachi, Ltd. Semiconductor memory device having bipolar and field effect transistors and an improved coupling arrangement for logic units or logic blocks
EP0104657A2 (en) * 1982-09-29 1984-04-04 Hitachi, Ltd. Semiconductor integrated circuit device
JPS5978554A (en) * 1982-10-27 1984-05-07 Hitachi Ltd Semiconductor integrated circuit device
JPH0522320B2 (en) * 1982-10-27 1993-03-29 Hitachi Ltd
US4665505A (en) * 1983-12-26 1987-05-12 Hitachi, Ltd. Write circuit for use in semiconductor storage device
DE3447723A1 (en) * 1983-12-26 1985-07-04 Hitachi, Ltd., Tokio/Tokyo INTEGRATED SEMICONDUCTOR CIRCUIT
JPS60136989A (en) * 1983-12-26 1985-07-20 Hitachi Ltd Write circuit of semiconductor storage device
US5111432A (en) * 1983-12-26 1992-05-05 Hitachi, Ltd. Semiconductor integrated circuit device with power consumption reducing arrangement
JPS60170090A (en) * 1984-02-13 1985-09-03 Hitachi Ltd Semiconductor integrated circuit
US4713796A (en) * 1984-02-13 1987-12-15 Hitachi, Ltd. Semiconductor integrated circuit
US5311482A (en) * 1984-02-13 1994-05-10 Hitachi, Ltd. Semiconductor integrated circuit
US5371713A (en) * 1984-02-13 1994-12-06 Hitachi, Ltd. Semiconductor integrated circuit
DE3504930A1 (en) * 1984-02-13 1985-08-14 Hitachi, Ltd., Tokio/Tokyo INTEGRATED SEMICONDUCTOR CIRCUIT
JPS61278098A (en) * 1985-06-03 1986-12-08 Nippon Telegr & Teleph Corp <Ntt> Memory circuit
JPS6236796A (en) * 1985-08-10 1987-02-17 Nippon Telegr & Teleph Corp <Ntt> Semiconductor memory
JPS62231491A (en) * 1986-03-31 1987-10-12 Fujitsu Ltd Semiconductor storage device
JPH0453038B2 (en) * 1986-03-31 1992-08-25 Fujitsu Ltd
JPS63244878A (en) * 1987-03-31 1988-10-12 Toshiba Corp Semiconductor memory device
JPH04212790A (en) * 1991-02-13 1992-08-04 Hitachi Ltd Semiconductor integrated circuit
JPH0689585A (en) * 1993-01-13 1994-03-29 Hitachi Ltd Semiconductor memory

Also Published As

Publication number Publication date
JPS6331879B2 (en) 1988-06-27

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