JPS55135393A - Semiconductor memory element - Google Patents

Semiconductor memory element

Info

Publication number
JPS55135393A
JPS55135393A JP4183179A JP4183179A JPS55135393A JP S55135393 A JPS55135393 A JP S55135393A JP 4183179 A JP4183179 A JP 4183179A JP 4183179 A JP4183179 A JP 4183179A JP S55135393 A JPS55135393 A JP S55135393A
Authority
JP
Japan
Prior art keywords
memory cell
array line
flip
semiconductor memory
memory element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4183179A
Other languages
Japanese (ja)
Inventor
Toshio Hayashi
Kuniyasu Kawarada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP4183179A priority Critical patent/JPS55135393A/en
Publication of JPS55135393A publication Critical patent/JPS55135393A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/414—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type
    • G11C11/416—Read-write [R-W] circuits 

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)

Abstract

PURPOSE:To simplify high-density implementation by reducing a memory cell in size by writing binary information in the memory cell via one colum array line. CONSTITUTION:One memory cell 6 consists of flip-flop circuits Q1 and Q2, and gate element Q5, and the transistor of either flip-flop circuit Q1 or Q2 is connected to column array line 4 via gate element Q5 so as to write binary information in cell 6 via one column array line 4. Consequently, the memory cell is reduced in size, wherefore high-density implementation comes into effect easily.
JP4183179A 1979-04-06 1979-04-06 Semiconductor memory element Pending JPS55135393A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4183179A JPS55135393A (en) 1979-04-06 1979-04-06 Semiconductor memory element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4183179A JPS55135393A (en) 1979-04-06 1979-04-06 Semiconductor memory element

Publications (1)

Publication Number Publication Date
JPS55135393A true JPS55135393A (en) 1980-10-22

Family

ID=12619206

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4183179A Pending JPS55135393A (en) 1979-04-06 1979-04-06 Semiconductor memory element

Country Status (1)

Country Link
JP (1) JPS55135393A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0482085A (en) * 1990-07-25 1992-03-16 Toshiba Corp Static memory cell

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
IBM TECHNICAL DISCLOSURE BULLETIN *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0482085A (en) * 1990-07-25 1992-03-16 Toshiba Corp Static memory cell

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