JPS56111189A - Semiconductor read only memory - Google Patents

Semiconductor read only memory

Info

Publication number
JPS56111189A
JPS56111189A JP1182880A JP1182880A JPS56111189A JP S56111189 A JPS56111189 A JP S56111189A JP 1182880 A JP1182880 A JP 1182880A JP 1182880 A JP1182880 A JP 1182880A JP S56111189 A JPS56111189 A JP S56111189A
Authority
JP
Japan
Prior art keywords
parallel
series
connection
mosfets
readout
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1182880A
Other languages
Japanese (ja)
Other versions
JPS6032916B2 (en
Inventor
Setsushi Kamuro
Yoshifumi Masaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP55011828A priority Critical patent/JPS6032916B2/en
Priority to US06/229,508 priority patent/US4404654A/en
Publication of JPS56111189A publication Critical patent/JPS56111189A/en
Publication of JPS6032916B2 publication Critical patent/JPS6032916B2/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
    • G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
    • G11C17/123—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices comprising cells having several storage transistors connected in series

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To make high density and high speed readout of ROMs, by selecting the bit line connecting a serial MOSFET group to the matrix memory in parallel connection, with a column selection circuit formed with a matrix MOSFET. CONSTITUTION:A matrix memory section 1 is in series connection, and the column formed with series MOSFETs controlled with a gate input signal Rj from an address decoder 2 is connected to the bit line Do via MOSFETs Es0, Es1 to which the column selection sampling gate input signal is fed from the decoder 2 in parallel. With this series and parallel connecting constitution, the delay in the information readout due to multistage like connection with only series is not made, and the increase in the occupied area accompanied with the increase of ground connection due to parallel connection only is avoided. Further, the selection of the bit lines Do... is made with a column selection ciruit 4 formed with MOSFETs of serial and parallel control to constitute ROMs fast in readout speed and high in density.
JP55011828A 1980-01-29 1980-01-31 Semiconductor read-only memory Expired JPS6032916B2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP55011828A JPS6032916B2 (en) 1980-01-31 1980-01-31 Semiconductor read-only memory
US06/229,508 US4404654A (en) 1980-01-29 1981-01-29 Semiconductor device system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55011828A JPS6032916B2 (en) 1980-01-31 1980-01-31 Semiconductor read-only memory

Publications (2)

Publication Number Publication Date
JPS56111189A true JPS56111189A (en) 1981-09-02
JPS6032916B2 JPS6032916B2 (en) 1985-07-31

Family

ID=11788618

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55011828A Expired JPS6032916B2 (en) 1980-01-29 1980-01-31 Semiconductor read-only memory

Country Status (1)

Country Link
JP (1) JPS6032916B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63226060A (en) * 1986-10-27 1988-09-20 Seiko Epson Corp Semiconductor storage device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6299223U (en) * 1985-12-10 1987-06-24

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63226060A (en) * 1986-10-27 1988-09-20 Seiko Epson Corp Semiconductor storage device
JP2563803B2 (en) * 1986-10-27 1996-12-18 セイコーエプソン株式会社 Semiconductor memory device

Also Published As

Publication number Publication date
JPS6032916B2 (en) 1985-07-31

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