JPH0558583B2 - - Google Patents

Info

Publication number
JPH0558583B2
JPH0558583B2 JP60122365A JP12236585A JPH0558583B2 JP H0558583 B2 JPH0558583 B2 JP H0558583B2 JP 60122365 A JP60122365 A JP 60122365A JP 12236585 A JP12236585 A JP 12236585A JP H0558583 B2 JPH0558583 B2 JP H0558583B2
Authority
JP
Japan
Prior art keywords
channel region
pad
transistor
conductivity type
channel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60122365A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6144471A (ja
Inventor
Enu Rauntorii Robaato
Eichi Haandon Toroi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=24475407&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=JPH0558583(B2) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of JPS6144471A publication Critical patent/JPS6144471A/ja
Publication of JPH0558583B2 publication Critical patent/JPH0558583B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/519—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their top-view geometrical layouts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
    • H10D64/516—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers the thicknesses being non-uniform
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Control Of Electrical Variables (AREA)
  • Protection Of Static Devices (AREA)
JP60122365A 1984-06-06 1985-06-05 半導体ディバイス用保護装置 Granted JPS6144471A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US617876 1984-06-06
US06617876 US4692781B2 (en) 1984-06-06 1984-06-06 Semiconductor device with electrostatic discharge protection

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP6241175A Division JP2706626B2 (ja) 1984-06-06 1994-10-05 半導体デバイス

Publications (2)

Publication Number Publication Date
JPS6144471A JPS6144471A (ja) 1986-03-04
JPH0558583B2 true JPH0558583B2 (en, 2012) 1993-08-26

Family

ID=24475407

Family Applications (3)

Application Number Title Priority Date Filing Date
JP60122365A Granted JPS6144471A (ja) 1984-06-06 1985-06-05 半導体ディバイス用保護装置
JP6241175A Expired - Lifetime JP2706626B2 (ja) 1984-06-06 1994-10-05 半導体デバイス
JP8248203A Expired - Lifetime JP2810874B2 (ja) 1984-06-06 1996-09-19 半導体デバイス

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP6241175A Expired - Lifetime JP2706626B2 (ja) 1984-06-06 1994-10-05 半導体デバイス
JP8248203A Expired - Lifetime JP2810874B2 (ja) 1984-06-06 1996-09-19 半導体デバイス

Country Status (2)

Country Link
US (1) US4692781B2 (en, 2012)
JP (3) JPS6144471A (en, 2012)

Families Citing this family (63)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4692781B2 (en) * 1984-06-06 1998-01-20 Texas Instruments Inc Semiconductor device with electrostatic discharge protection
JPS6271275A (ja) * 1985-09-25 1987-04-01 Toshiba Corp 半導体集積回路
US4908688A (en) * 1986-03-14 1990-03-13 Motorola, Inc. Means and method for providing contact separation in silicided devices
JPH065749B2 (ja) * 1986-05-22 1994-01-19 日本電気株式会社 半導体装置
JP2541518B2 (ja) * 1986-06-25 1996-10-09 株式会社日立製作所 半導体集積回路装置
JPH0693498B2 (ja) * 1986-08-25 1994-11-16 日立超エル・エス・アイエンジニアリング株式会社 半導体集積回路装置
JP2545527B2 (ja) * 1987-01-23 1996-10-23 沖電気工業株式会社 半導体装置
US4750081A (en) * 1987-10-19 1988-06-07 Unisys Corporation Phantom ESD protection circuit employing E-field crowding
US4855620A (en) * 1987-11-18 1989-08-08 Texas Instruments Incorporated Output buffer with improved ESD protection
JPH01199467A (ja) * 1988-02-04 1989-08-10 Seiko Epson Corp 半導体装置
JP2538312B2 (ja) * 1988-06-02 1996-09-25 三菱電機株式会社 半導体集積回路
US5196913A (en) * 1988-07-11 1993-03-23 Samsung Electronics Co., Ltd. Input protection device for improving of delay time on input stage in semi-conductor devices
JPH02114533A (ja) * 1988-10-24 1990-04-26 Nec Corp 半導体装置
US4990802A (en) * 1988-11-22 1991-02-05 At&T Bell Laboratories ESD protection for output buffers
US5210846B1 (en) * 1989-05-15 1999-06-29 Dallas Semiconductor One-wire bus architecture
US5043782A (en) * 1990-05-08 1991-08-27 David Sarnoff Research Center, Inc. Low voltage triggered snap-back device
JP2557980B2 (ja) * 1989-05-26 1996-11-27 富士通株式会社 半導体入力保護装置
JP2776569B2 (ja) * 1989-07-10 1998-07-16 日本電気株式会社 半導体装置
US5124877A (en) * 1989-07-18 1992-06-23 Gazelle Microcircuits, Inc. Structure for providing electrostatic discharge protection
JPH0415955A (ja) * 1990-05-09 1992-01-21 Mitsubishi Electric Corp 半導体装置の入力回路の製造方法
FR2662303A1 (fr) * 1990-05-17 1991-11-22 Hello Sa Transistor mos a tension de seuil elevee.
WO1992016998A1 (en) 1991-03-18 1992-10-01 Quality Semiconductor, Inc. Fast transmission gate switch
US6208195B1 (en) 1991-03-18 2001-03-27 Integrated Device Technology, Inc. Fast transmission gate switch
JP3375659B2 (ja) * 1991-03-28 2003-02-10 テキサス インスツルメンツ インコーポレイテツド 静電放電保護回路の形成方法
JPH05121670A (ja) * 1991-10-25 1993-05-18 Nec Corp 半導体入力保護装置
US5272371A (en) * 1991-11-19 1993-12-21 Sgs-Thomson Microelectronics, Inc. Electrostatic discharge protection structure
US5293057A (en) * 1992-08-14 1994-03-08 Micron Technology, Inc. Electrostatic discharge protection circuit for semiconductor device
JP2958202B2 (ja) * 1992-12-01 1999-10-06 シャープ株式会社 半導体装置
US5504362A (en) * 1992-12-22 1996-04-02 International Business Machines Corporation Electrostatic discharge protection device
JPH06232354A (ja) * 1992-12-22 1994-08-19 Internatl Business Mach Corp <Ibm> 静電気保護デバイス
US5404041A (en) * 1993-03-31 1995-04-04 Texas Instruments Incorporated Source contact placement for efficient ESD/EOS protection in grounded substrate MOS integrated circuit
US5440151A (en) * 1993-04-09 1995-08-08 Matra Mhs Electrostatic discharge protection device for MOS integrated circuits
US5343053A (en) * 1993-05-21 1994-08-30 David Sarnoff Research Center Inc. SCR electrostatic discharge protection for integrated circuits
CN1047027C (zh) * 1994-01-12 1999-12-01 爱特梅尔股份有限公司 有最佳静电放电保护的输入/输出晶体管
FR2723800B1 (fr) * 1994-08-19 1997-01-03 Thomson Csf Semiconducteurs Circuit de protection contre les decharges electrostatiques
US5572394A (en) * 1995-04-06 1996-11-05 Industrial Technology Research Institute CMOS on-chip four-LVTSCR ESD protection scheme
US5754380A (en) * 1995-04-06 1998-05-19 Industrial Technology Research Institute CMOS output buffer with enhanced high ESD protection capability
CN1099713C (zh) * 1995-04-06 2003-01-22 工业技术研究院 用n边多边形单元布线的mos单元、多单元晶体管及ic芯片
US5637900A (en) * 1995-04-06 1997-06-10 Industrial Technology Research Institute Latchup-free fully-protected CMOS on-chip ESD protection circuit
JPH08316426A (ja) * 1995-05-16 1996-11-29 Nittetsu Semiconductor Kk Ｍｏｓ型半導体装置およびその製造方法
US5656967A (en) * 1995-08-07 1997-08-12 Micron Technology, Inc. Two-stage fusible electrostatic discharge protection circuit
KR100203054B1 (ko) * 1995-12-02 1999-06-15 윤종용 개선된 정전기 방전 능력을 갖는 집적 회로
JP3036423B2 (ja) * 1996-02-06 2000-04-24 日本電気株式会社 半導体装置
TW359023B (en) * 1996-04-20 1999-05-21 Winbond Electronics Corp Device for improvement of static discharge protection in ICs
US5796638A (en) * 1996-06-24 1998-08-18 The Board Of Trustees Of The University Of Illinois Methods, apparatus and computer program products for synthesizing integrated circuits with electrostatic discharge capability and connecting ground rules faults therein
US6246122B1 (en) 1996-07-09 2001-06-12 Winbond Electronics Corp. Electrostatic discharge protective schemes for integrated circuit packages
KR100240872B1 (ko) * 1997-02-17 2000-01-15 윤종용 정전기 방전 보호 회로 및 그것을 구비하는 집적 회로
US6534833B1 (en) 1998-03-18 2003-03-18 Texas Instruments Incorporated Semiconductor device with protection circuitry and method
JP4295370B2 (ja) * 1998-07-02 2009-07-15 Ｏｋｉセミコンダクタ株式会社 半導体素子
DE19840239A1 (de) * 1998-09-03 2000-03-09 Siemens Ag Leistungshalbleiter-Bauelement mit einer Anordnung zum Schutz vor Schäden durch elektrostatische Entladungen
US6633468B1 (en) 1999-08-20 2003-10-14 Texas Instruments Incorporated High voltage protection circuit for improved oxide reliability
JP2001077305A (ja) 1999-08-31 2001-03-23 Toshiba Corp 半導体装置
US6624487B1 (en) 2002-05-07 2003-09-23 Texas Instruments Incorporated Drain-extended MOS ESD protection structure
US6804095B2 (en) * 2002-06-05 2004-10-12 Texas Instruments Incorporated Drain-extended MOS ESD protection structure
US7092227B2 (en) * 2002-08-29 2006-08-15 Industrial Technology Research Institute Electrostatic discharge protection circuit with active device
JP2004247578A (ja) * 2003-02-14 2004-09-02 Kawasaki Microelectronics Kk 半導体装置および半導体装置の製造方法
US6919603B2 (en) * 2003-04-30 2005-07-19 Texas Instruments Incorporated Efficient protection structure for reverse pin-to-pin electrostatic discharge
US7244992B2 (en) * 2003-07-17 2007-07-17 Ming-Dou Ker Turn-on-efficient bipolar structures with deep N-well for on-chip ESD protection
DE102004012819B4 (de) * 2004-03-16 2006-02-23 Infineon Technologies Ag Leistungshalbleiterbauelement mit erhöhter Robustheit
JP4935708B2 (ja) * 2008-02-19 2012-05-23 三菱電機ビルテクノサービス株式会社 乗客コンベアの注意喚起装置
US20100001394A1 (en) * 2008-07-03 2010-01-07 Promos Technologies Inc. Chip package with esd protection structure
US7888704B2 (en) * 2008-08-15 2011-02-15 System General Corp. Semiconductor device for electrostatic discharge protection
US9331066B2 (en) * 2014-01-24 2016-05-03 Taiwan Semiconductor Manufacturing Company Ltd. Method and computer-readable medium for detecting parasitic transistors by utilizing equivalent circuit and threshold distance

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US3673427A (en) * 1970-02-02 1972-06-27 Electronic Arrays Input circuit structure for mos integrated circuits
US3999213A (en) * 1972-04-14 1976-12-21 U.S. Philips Corporation Semiconductor device and method of manufacturing the device
US4055444A (en) * 1976-01-12 1977-10-25 Texas Instruments Incorporated Method of making N-channel MOS integrated circuits
JPS5299786A (en) * 1976-02-18 1977-08-22 Agency Of Ind Science & Technol Mos integrated circuit
JPS5413780A (en) * 1977-07-01 1979-02-01 Nec Corp Semiconductor device
JPS53136278A (en) * 1977-08-18 1978-11-28 Shinjirou Izumi Apparatus for carrying tetrahedronn shaped packed bodies
JPS5437584A (en) * 1977-08-29 1979-03-20 Nec Corp Field effect semiconductor device of insulation gate type
JPS5565469A (en) * 1978-11-13 1980-05-16 Toshiba Corp Mos integrated circuit
JPS56100441A (en) * 1980-01-16 1981-08-12 Hitachi Ltd Semiconductor ic device with protection element and manufacture thereof
US4342045A (en) * 1980-04-28 1982-07-27 Advanced Micro Devices, Inc. Input protection device for integrated circuits
JPS5737876A (en) * 1980-08-20 1982-03-02 Hitachi Ltd Semiconductor integrated circuit apparatus
JPS57211273A (en) * 1981-06-23 1982-12-25 Toshiba Corp Semiconductor integrated circuit device
JPS57211272A (en) * 1981-06-23 1982-12-25 Toshiba Corp Semiconductor device
JPS5861657A (ja) * 1981-10-09 1983-04-12 Toshiba Corp 半導体集積回路
US4692781B2 (en) * 1984-06-06 1998-01-20 Texas Instruments Inc Semiconductor device with electrostatic discharge protection

Also Published As

Publication number Publication date
US4692781B1 (en) 1995-05-30
US4692781A (en) 1987-09-08
US4692781B2 (en) 1998-01-20
JPH07321318A (ja) 1995-12-08
JPH09172174A (ja) 1997-06-30
JPS6144471A (ja) 1986-03-04
JP2810874B2 (ja) 1998-10-15
JP2706626B2 (ja) 1998-01-28

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term