JPH0519979B2 - - Google Patents
Info
- Publication number
- JPH0519979B2 JPH0519979B2 JP60083134A JP8313485A JPH0519979B2 JP H0519979 B2 JPH0519979 B2 JP H0519979B2 JP 60083134 A JP60083134 A JP 60083134A JP 8313485 A JP8313485 A JP 8313485A JP H0519979 B2 JPH0519979 B2 JP H0519979B2
- Authority
- JP
- Japan
- Prior art keywords
- gate electrode
- gate
- silicide
- sidewall
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000012535 impurity Substances 0.000 claims description 13
- 229910021332 silicide Inorganic materials 0.000 claims description 9
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 9
- 230000008018 melting Effects 0.000 claims description 8
- 238000002844 melting Methods 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 description 9
- 238000000034 method Methods 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 7
- 230000005669 field effect Effects 0.000 description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- 239000000969 carrier Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- -1 phosphorus ions Chemical class 0.000 description 2
- 108010075750 P-Type Calcium Channels Proteins 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8313485A JPS61241974A (ja) | 1985-04-18 | 1985-04-18 | 半導体装置の製造方法 |
| DE3530065A DE3530065C2 (de) | 1984-08-22 | 1985-08-22 | Verfahren zur Herstellung eines Halbleiters |
| US06/768,374 US4727038A (en) | 1984-08-22 | 1985-08-22 | Method of fabricating semiconductor device |
| US07/358,491 US4971922A (en) | 1984-08-22 | 1989-05-30 | Method of fabricating semiconductor device |
| US08/193,912 US5869377A (en) | 1984-08-22 | 1994-02-03 | Method of fabrication LDD semiconductor device with amorphous regions |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8313485A JPS61241974A (ja) | 1985-04-18 | 1985-04-18 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61241974A JPS61241974A (ja) | 1986-10-28 |
| JPH0519979B2 true JPH0519979B2 (zh) | 1993-03-18 |
Family
ID=13793727
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8313485A Granted JPS61241974A (ja) | 1984-08-22 | 1985-04-18 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61241974A (zh) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8945667B2 (en) * | 2009-05-22 | 2015-02-03 | Envirotech Services, Inc. | Alkylcellulose and salt compositions for dust control applications |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63115377A (ja) * | 1986-11-04 | 1988-05-19 | Matsushita Electronics Corp | 半導体装置の製造方法 |
| JPS63144574A (ja) * | 1986-12-09 | 1988-06-16 | Nec Corp | Ｍｏｓ型半導体装置 |
| JP2506963B2 (ja) * | 1988-07-26 | 1996-06-12 | 松下電器産業株式会社 | 半導体装置 |
| KR100296126B1 (ko) | 1998-12-22 | 2001-08-07 | 박종섭 | 고집적 메모리 소자의 게이트전극 형성방법 |
| KR100299386B1 (ko) | 1998-12-28 | 2001-11-02 | 박종섭 | 반도체 소자의 게이트 전극 형성방법 |
| JP3988342B2 (ja) | 1998-12-29 | 2007-10-10 | 株式会社ハイニックスセミコンダクター | 半導体素子のゲート電極形成方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59121878A (ja) * | 1982-12-28 | 1984-07-14 | Toshiba Corp | 半導体装置の製造方法 |
| JPS60113472A (ja) * | 1983-11-24 | 1985-06-19 | Toshiba Corp | 半導体装置の製造方法 |
-
1985
- 1985-04-18 JP JP8313485A patent/JPS61241974A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59121878A (ja) * | 1982-12-28 | 1984-07-14 | Toshiba Corp | 半導体装置の製造方法 |
| JPS60113472A (ja) * | 1983-11-24 | 1985-06-19 | Toshiba Corp | 半導体装置の製造方法 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8945667B2 (en) * | 2009-05-22 | 2015-02-03 | Envirotech Services, Inc. | Alkylcellulose and salt compositions for dust control applications |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61241974A (ja) | 1986-10-28 |
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