JPH0434822B2 - - Google Patents

Info

Publication number
JPH0434822B2
JPH0434822B2 JP58100077A JP10007783A JPH0434822B2 JP H0434822 B2 JPH0434822 B2 JP H0434822B2 JP 58100077 A JP58100077 A JP 58100077A JP 10007783 A JP10007783 A JP 10007783A JP H0434822 B2 JPH0434822 B2 JP H0434822B2
Authority
JP
Japan
Prior art keywords
active layer
field effect
effect transistor
gate electrode
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP58100077A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59225571A (ja
Inventor
Kenichi Kikuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP58100077A priority Critical patent/JPS59225571A/ja
Publication of JPS59225571A publication Critical patent/JPS59225571A/ja
Publication of JPH0434822B2 publication Critical patent/JPH0434822B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP58100077A 1983-06-03 1983-06-03 電界効果トランジスタ Granted JPS59225571A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58100077A JPS59225571A (ja) 1983-06-03 1983-06-03 電界効果トランジスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58100077A JPS59225571A (ja) 1983-06-03 1983-06-03 電界効果トランジスタ

Publications (2)

Publication Number Publication Date
JPS59225571A JPS59225571A (ja) 1984-12-18
JPH0434822B2 true JPH0434822B2 (OSRAM) 1992-06-09

Family

ID=14264381

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58100077A Granted JPS59225571A (ja) 1983-06-03 1983-06-03 電界効果トランジスタ

Country Status (1)

Country Link
JP (1) JPS59225571A (OSRAM)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62267754A (ja) * 1986-05-16 1987-11-20 Fuji Xerox Co Ltd 電子写真用感光材料の製造方法
JPH01127262U (OSRAM) * 1988-02-23 1989-08-31
KR100242477B1 (ko) * 1991-07-15 2000-02-01 비센트 비.인그라시아 반도체 장치
US5384273A (en) * 1994-04-26 1995-01-24 Motorola Inc. Method of making a semiconductor device having a short gate length

Also Published As

Publication number Publication date
JPS59225571A (ja) 1984-12-18

Similar Documents

Publication Publication Date Title
JP2707433B2 (ja) 薄膜トランジスタの製造方法
JPS59229876A (ja) シヨツトキ−ゲ−ト型電界効果トランジスタの製造方法
EP0085916A3 (en) Method of fabricating field effect transistors
JPH0434822B2 (OSRAM)
JP2935083B2 (ja) 薄膜トランジスタの製造方法
JPH06349856A (ja) 薄膜トランジスタ及びその製造方法
JPH06209010A (ja) 薄膜トランジスタの製造方法
JPS6169176A (ja) 半導体装置の製造方法
JPS637033B2 (OSRAM)
JPH04290473A (ja) 半導体装置の製造方法
KR0141780B1 (ko) 반도체소자 제조방법
JPS6286869A (ja) 半導体装置の製造方法
JPS588590B2 (ja) ショットキ障壁ゲ−ト型電界効果トランジスタの製造方法
JP3298066B2 (ja) 化合物半導体素子の製造方法
JPH04146627A (ja) 電界効果型半導体装置およびその製造方法
JPH03147338A (ja) 半導体装置の製造方法
KR0161924B1 (ko) 박막트랜지스터 제조방법
JPH0245937A (ja) 半導体装置の製造方法
JPS59197174A (ja) Ｍｉｓ型半導体装置
JPH04287932A (ja) 半導体装置の製造方法
JPH04119636A (ja) 電界効果トランジスタおよびその製造方法
JPH0298945A (ja) 電界効果トランジスタの製造方法
JPS62286286A (ja) ＧａＡｓ　ＭＥＳＦＥＴとその製造方法
JPS6049677A (ja) 電界効果トランジスタの製造方法
JPH03293732A (ja) 半導体装置の製造方法