JP7487753B2 - 半導体装置および製造方法 - Google Patents
半導体装置および製造方法 Download PDFInfo
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- JP7487753B2 JP7487753B2 JP2022073798A JP2022073798A JP7487753B2 JP 7487753 B2 JP7487753 B2 JP 7487753B2 JP 2022073798 A JP2022073798 A JP 2022073798A JP 2022073798 A JP2022073798 A JP 2022073798A JP 7487753 B2 JP7487753 B2 JP 7487753B2
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Description
特許文献1 特表2016-204227号公報
Q≧2.6186×10 10 ×e 0.12412x
前記第1注入段階において、プラズマドーピングにより、前記第1の深さに水素を注入してよい。前記プラズマドーピングの後に、前記半導体基板の前記下面を研削してよい。前記プラズマドーピングの後に、前記半導体基板の前記下面をレーザーアニールしてよい。
M=1.76×Rp+12.32
フォトレジスト膜200の厚みは、上式で示される最小膜厚Mと同一か、より大きいことが好ましい。
Q≧2.6186×1010×e0.12412x
本式においては、xの単位は(μm)であることに注意が必要である。
Rp≧X0+ΔRp
半導体基板10の上面21に設けられたトレンチ部の底部よりも、上面21に近い位置に、結晶欠陥の濃度ピーク位置(下面23から長さX0の位置)を設定することで、半導体基板10の深さ方向のほぼ全体に、通過領域106を形成できる。
Claims (33)
- 上面および下面を有する半導体基板を備える半導体装置であって、
前記半導体基板に設けられた第1導電型のドリフト領域と、
前記ドリフト領域と前記上面との間に設けられた第2導電型のベース領域と、
前記半導体基板において前記下面に接して設けられた第1導電型または第2導電型の高濃度領域と、
前記高濃度領域と前記ドリフト領域との間に設けられ、前記ドリフト領域よりもドナー濃度の高い1つ以上のドナー濃度ピークを有する第1導電型のバッファ領域と
を更に備え、
前記上面から前記下面を結ぶ深さ方向における前記ドリフト領域の全体にわたって、前記ドリフト領域のドナー濃度は前記半導体基板のベースドーピング濃度よりも高く、
前記ドリフト領域は、前記深さ方向における全体にわたって水素ドナーを含み、
前記ドリフト領域のドナー濃度は前記ベースドーピング濃度と前記水素ドナーの濃度を含む
半導体装置。 - 前記深さ方向において、水素濃度分布が第1の水素濃度ピークと第2の水素濃度ピークを有し、ドナー濃度分布が第1のドナー濃度ピークと第2のドナー濃度ピークを有し、
前記第1の水素濃度ピークと前記第1のドナー濃度ピークは第1の深さに配置されており、前記第2の水素濃度ピークと前記第2のドナー濃度ピークは、前記下面を基準として前記第1の深さよりも深い第2の深さに配置されている
請求項1に記載の半導体装置。 - 前記第1の深さと前記第2の深さとの間における前記ドナー濃度分布は、ドナー濃度分布の値が第1範囲におけるドナー濃度分布の平均濃度の±50%以内である平坦領域を有し、
前記第1範囲は、前記第1の深さから前記第2の深さまでの長さをZLとした場合に、前記深さ方向の前記第1の深さと前記第2の深さとの間の中心から前記第1の深さ側および前記第2の深さ側にそれぞれ0.25ZL離れた2点間の長さ0.5ZLの範囲であり、
前記平坦領域の前記深さ方向における長さが、前記半導体基板の前記深さ方向における厚みの10%以上である
請求項2に記載の半導体装置。 - 前記第1の深さと前記第2の深さとの間における前記ドナー濃度分布は、ドナー濃度分布の値が第1範囲におけるドナー濃度分布の平均濃度の±50%以内である平坦領域を有し、
前記第1範囲は、前記第1の深さから前記第2の深さまでの長さをZLとした場合に、前記深さ方向の前記第1の深さと前記第2の深さとの間の中心から前記第1の深さ側および前記第2の深さ側にそれぞれ0.25ZL離れた2点間の長さ0.5ZLの範囲であり、
前記平坦領域の前記深さ方向における長さが10μm以上である
請求項2に記載の半導体装置。 - 前記ドリフト領域は、ドナー濃度の最大値と最小値との差分がドナー濃度の最大値の50%以内である領域が深さ方向に連続している平坦領域を有し、
前記平坦領域の前記深さ方向における長さが10μm以上である
請求項1に記載の半導体装置。 - 前記ドリフト領域は、ドナー濃度の最大値と最小値との差分がドナー濃度の最大値の50%以内である領域が深さ方向に連続している平坦領域を有し、
前記平坦領域の前記深さ方向における長さが、前記半導体基板の前記深さ方向における厚みの10%以上である
請求項1に記載の半導体装置。 - 前記深さ方向において、水素濃度分布が第1の水素濃度ピークと第2の水素濃度ピークを有し、ドナー濃度分布が第1のドナー濃度ピークと第2のドナー濃度ピークを有し、
前記第1の水素濃度ピークと前記第1のドナー濃度ピークは第1の深さに配置されており、前記第2の水素濃度ピークと前記第2のドナー濃度ピークは、前記下面を基準として前記第1の深さよりも深い第2の深さに配置されている
請求項5または6に記載の半導体装置。 - 前記ドリフト領域はドナーとして水素を含む
請求項1から7のいずれか一項に記載の半導体装置。 - それぞれの濃度ピークは、前記下面から前記上面に向かうにつれて濃度値が増大する上りスロープを有し、
前記第2のドナー濃度ピークの前記上りスロープの傾きを、前記第2の水素濃度ピークの前記上りスロープの傾きで規格化した値が、前記第1のドナー濃度ピークの前記上りスロープの傾きを、前記第1の水素濃度ピークの前記上りスロープの傾きで規格化した値よりも小さい
請求項2から4、および、7のいずれか一項に記載の半導体装置。 - それぞれの水素濃度ピークは、前記下面から前記上面に向かうにつれて濃度値が減少する下りスロープを有し、
前記第2の水素濃度ピークは、前記上りスロープの傾きが、前記下りスロープの傾きよりも小さい
請求項9に記載の半導体装置。 - それぞれのドナー濃度ピークは、前記下面から前記上面に向かうにつれて濃度値が減少する下りスロープを有し、
前記第2のドナー濃度ピークは、前記上りスロープの傾きが、前記下りスロープの傾きよりも小さい
請求項10に記載の半導体装置。 - 前記第2の水素濃度ピークの濃度値が、前記第1の水素濃度ピークの濃度値よりも小さい
請求項9から11のいずれか一項に記載の半導体装置。 - 前記第1のドナー濃度ピークは、前記バッファ領域の前記ドナー濃度ピークである
請求項9から12のいずれか一項に記載の半導体装置。 - 前記ベース領域と前記ドリフト領域との間に設けられ、前記ドリフト領域よりもドナー濃度の高い1つ以上のドナー濃度ピークを有する蓄積領域を更に備え、
前記第2のドナー濃度ピークは、前記蓄積領域の前記ドナー濃度ピークである
請求項9から13のいずれか一項に記載の半導体装置。 - 前記蓄積領域は、前記第2のドナー濃度ピーク以外に、水素以外のドナーによる前記ドナー濃度ピークを有する
請求項14に記載の半導体装置。 - 前記ベース領域と前記ドリフト領域との間に設けられ、前記ドリフト領域よりもドナー濃度の高い1つ以上のドナー濃度ピークを有する蓄積領域を更に備え、
前記第2のドナー濃度ピークは、前記バッファ領域と前記蓄積領域との間に配置されている
請求項9から13のいずれか一項に記載の半導体装置。 - 前記半導体基板の前記上面に設けられたゲートトレンチ部を更に備え、
前記第2のドナー濃度ピークは、前記ゲートトレンチ部の底部と、前記半導体基板の前記上面との間に配置されている
請求項9から15のいずれか一項に記載の半導体装置。 - 前記半導体基板に設けられた活性部と、
前記半導体基板の上面視において前記活性部を囲んで設けられたエッジ終端構造部と
を更に備え、
前記半導体基板は、前記第2の水素濃度ピークの位置に注入された水素が通過した通過領域を有し、
前記深さ方向において、前記エッジ終端構造部に設けられた前記通過領域は、前記活性部に設けられた前記通過領域よりも短いか、または、前記エッジ終端構造部には前記通過領域が設けられていない
請求項9から17のいずれか一項に記載の半導体装置。 - 前記半導体基板に設けられたトランジスタ部およびダイオード部を更に備え、
前記半導体基板は、前記第2の水素濃度ピークの位置に注入された水素が通過した通過領域を有し、
前記深さ方向において、前記ダイオード部に設けられた前記通過領域は、前記トランジスタ部に設けられた前記通過領域よりも短いか、または、前記ダイオード部には前記通過領域が設けられていない
請求項9から18のいずれか一項に記載の半導体装置。 - 上面および下面を有する半導体基板を備える半導体装置であって、
前記半導体基板に設けられた第1導電型のドリフト領域と、
前記ドリフト領域と前記上面との間に設けられた第2導電型のベース領域と、
前記半導体基板において前記下面に接して設けられた第1導電型または第2導電型の高濃度領域と、
前記高濃度領域と前記ドリフト領域との間に設けられ、前記ドリフト領域よりもドナー濃度の高い1つ以上のドナー濃度ピークを有する第1導電型のバッファ領域と
を更に備え、
前記上面から前記下面を結ぶ深さ方向における前記ドリフト領域の全体にわたって、前記ドリフト領域のドナー濃度は前記半導体基板のベースドーピング濃度よりも高く、
前記ドリフト領域は、前記深さ方向における全体にわたって水素ドナーを含み、
前記ドリフト領域のドナー濃度は前記ベースドーピング濃度と前記水素ドナーの濃度を含み、
前記深さ方向において、水素濃度分布が第1の水素濃度ピークと第2の水素濃度ピークを有し、ドナー濃度分布が第1のドナー濃度ピークと第2のドナー濃度ピークを有し、
前記第1の水素濃度ピークと前記第1のドナー濃度ピークは第1の深さに配置されており、前記第2の水素濃度ピークと前記第2のドナー濃度ピークは、前記下面を基準として前記第1の深さよりも深い第2の深さに配置されており、
それぞれの濃度ピークは、前記下面から前記上面に向かうにつれて濃度値が増大する上りスロープを有し、
前記第2のドナー濃度ピークの前記上りスロープの傾きを、前記第2の水素濃度ピークの前記上りスロープの傾きで規格化した値が、前記第1のドナー濃度ピークの前記上りスロープの傾きを、前記第1の水素濃度ピークの前記上りスロープの傾きで規格化した値よりも小さく、
前記半導体基板に設けられたトランジスタ部およびダイオード部を更に備え、
前記半導体基板は、前記第2の水素濃度ピークの位置に注入された水素が通過した通過領域を有し、
前記深さ方向において、前記トランジスタ部に設けられた前記通過領域は、前記ダイオード部に設けられた前記通過領域よりも短いか、または、前記トランジスタ部には前記通過領域が設けられていない
半導体装置。 - 前記第1の深さが、前記下面から前記深さ方向に5μm以下の範囲に含まれている
請求項9から20のいずれか一項に記載の半導体装置。 - 前記第1の水素濃度ピークにおけるドナー濃度が、1×1015/cm3以上、1×1017/cm3以下である
請求項9から21のいずれか一項に記載の半導体装置。 - 前記半導体基板の前記上面と前記下面とを結ぶ深さ方向における水素濃度分布が、前記下面から前記深さ方向に5μm以下の範囲に配置された第1の水素濃度ピークと、前記第1の水素濃度ピークよりも前記上面側でかつ前記下面から前記深さ方向に80μm以上離れた範囲に配置された第2の水素濃度ピークとを有し、
前記第1の水素濃度ピークの配置されている深さと前記第2の水素濃度ピークの配置されている深さとの間におけるドナー濃度の最小値は、前記半導体基板のドナー濃度よりも高い
請求項1、5および6のいずれか一項に記載の半導体装置。 - 前記半導体基板は、前記下面と前記第1の水素濃度ピークの間に不純物濃度ピークを有し、前記不純物濃度ピークの不純物はアルゴンまたはフッ素である
請求項23に記載の半導体装置。 - 前記半導体基板の前記上面と前記下面とを結ぶ深さ方向における水素濃度分布が、前記下面から前記深さ方向に5μm以下の範囲に配置された第1の水素濃度ピークと、前記第1の水素濃度ピークよりも前記上面側に配置された第2の水素濃度ピークとを有し、
前記半導体基板は、前記下面と前記第1の水素濃度ピークの間に不純物濃度ピークを有し、前記不純物濃度ピークの不純物はアルゴンまたはフッ素であり、
前記不純物濃度ピークの濃度値は、前記第1の水素濃度ピークの濃度値よりも小さい
請求項1、5および6のいずれか一項に記載の半導体装置。 - 前記不純物濃度ピークの濃度値は、前記第1の水素濃度ピークの濃度値の1/10以下である
請求項25に記載の半導体装置。 - 請求項1に記載の半導体装置の製造方法であって、
前記半導体基板の前記下面から、前記ドリフト領域が形成されるべき領域よりも前記上面側の位置に水素を注入して、前記水素が通過した通過領域を形成する注入段階と、
前記半導体基板を熱処理して前記通過領域に水素ドナーを形成し、前記深さ方向における前記ドリフト領域の全体にわたって、前記ドリフト領域のドナー濃度を前記半導体基板のベースドーピング濃度よりも高くする拡散段階と
を備える製造方法。 - 前記注入段階は、
前記半導体基板の前記下面から、第1の深さに水素を注入する第1注入段階と、
前記半導体基板の前記下面から、前記ドリフト領域が形成されるべき領域よりも前記上面側の前記位置である第2の深さに水素を注入する第2注入段階と
を含む請求項27に記載の製造方法。 - 前記第1注入段階では、前記半導体基板における水素の拡散係数と、前記第2の深さから定まる最小ドーズ量以上のドーズ量で、水素を注入する
請求項28に記載の製造方法。 - 前記半導体基板はシリコン基板であり、前記下面からの前記第2の深さをx(μm)とした場合に、前記第1注入段階における水素のドーズ量Q(ions/cm2)が下式を満たす
Q≧2.6186×1010×e0.12412x
請求項28または29に記載の製造方法。 - 前記第1注入段階において、プラズマドーピングにより、前記第1の深さに水素を注入する
請求項28から30のいずれか一項に記載の製造方法。 - 前記プラズマドーピングの後に、前記半導体基板の前記下面を研削する
請求項31に記載の製造方法。 - 前記プラズマドーピングの後に、前記半導体基板の前記下面をレーザーアニールする
請求項31に記載の製造方法。
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