JP7400874B2 - 半導体装置および製造方法 - Google Patents
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Description
特許文献1 特表2017―47285号公報
特許文献2 特表2017-146148号公報
Claims (22)
- 上面および下面を有する半導体基板を備える半導体装置であって、
前記半導体基板は、水素を含む水素含有領域を有し、
前記水素含有領域は、ヘリウムを含み、
前記水素含有領域の深さ方向におけるキャリア濃度分布は、
キャリア濃度が極大値となる第1極大点と、
前記第1極大点よりも前記上面側において前記キャリア濃度が極大値となる点のうち、前記第1極大点の最も近くに配置された第2極大点と、
前記第1極大点および前記第2極大点の間に配置され、前記キャリア濃度が極小値となる第1中間点と、
前記第2極大点よりも前記上面側において前記キャリア濃度が極小値となるか、または、前記深さ方向において前記キャリア濃度が一定となる点のうち、前記第2極大点の最も近くに配置された第2中間点と
を含み、
前記ヘリウムの深さ方向におけるヘリウム化学濃度分布のヘリウム濃度ピークの頂点は、前記第1極大点および前記第2極大点の間に配置され、
前記第1中間点における前記キャリア濃度は、前記第2中間点における前記キャリア濃度よりも低い
半導体装置。 - 前記キャリア濃度分布は、前記第1極大点よりも前記下面側において前記キャリア濃度が極小値となるか、または、前記深さ方向において前記キャリア濃度が一定となる点のうち、前記第1極大点の最も近くに配置された第3中間点を含み、
前記第1中間点の前記キャリア濃度は、前記第3中間点の前記キャリア濃度よりも低い
請求項1に記載の半導体装置。 - 前記第1中間点の前記キャリア濃度は、前記半導体基板のベースドーピング濃度より高い
請求項1または2に記載の半導体装置。 - 前記第1中間点の前記キャリア濃度は、前記半導体基板のベースドーピング濃度より低い
請求項1または2に記載の半導体装置。 - 前記キャリア濃度分布は、前記第2極大点よりも前記上面側において前記キャリア濃度が極大値となる点のうち、前記第2極大点の最も近くに配置された第3極大点を含み、
前記第2中間点は、前記第2極大点と前記第3極大点との間において前記キャリア濃度が極小値を示す点である
請求項1から4のいずれか一項に記載の半導体装置。 - 前記キャリア濃度分布は、前記第1極大点よりも前記下面側において前記キャリア濃度が極大値となる点のうち、前記第1極大点の最も近くに配置された第4極大点を含み、
前記第3中間点は、前記第1極大点と前記第4極大点との間において前記キャリア濃度が極小値を示す点である
請求項2に記載の半導体装置。 - 前記水素含有領域の深さ方向における水素化学濃度分布は1つ以上の水素濃度谷部を有し、それぞれの前記水素濃度谷部において、水素化学濃度が酸素化学濃度の1/10以上であり、
少なくとも一つの前記水素濃度谷部において、前記水素化学濃度がヘリウム化学濃度以上である
請求項1から6のいずれか一項に記載の半導体装置。 - それぞれの前記水素濃度谷部において、前記水素化学濃度が炭素化学濃度以上である
請求項7に記載の半導体装置。 - 前記水素含有領域の前記深さ方向における前記水素化学濃度分布は1つ以上の水素濃度ピークを有し、
前記水素濃度ピークにおいて、前記水素化学濃度が前記酸素化学濃度の1/2以上である
請求項7または8に記載の半導体装置。 - 前記ヘリウム濃度ピークよりも深い位置に設けられた前記水素濃度谷部において、前記水素化学濃度がヘリウム化学濃度以上である
請求項7から9のいずれか一項に記載の半導体装置。 - 1つ以上の前記水素濃度ピークとして、第1水素濃度ピークと、前記第1水素濃度ピークよりも前記上面側で前記第1水素濃度ピークと隣り合う第2水素濃度ピークと、前記第2水素濃度ピークよりも前記上面側の第3水素濃度ピークと、前記第1水素濃度ピークよりも前記下面側の第4水素濃度ピークと、を含み、
前記ヘリウム化学濃度分布の前記ヘリウム濃度ピークの半値全幅が、それぞれの前記水素濃度ピークの間隔よりも大きい
請求項9に記載の半導体装置。 - 前記第1極大点は、前記第1水素濃度ピークに対応し、
前記第2極大点は、前記第2水素濃度ピークに対応している
請求項11に記載の半導体装置。 - 前記水素含有領域の前記深さ方向における水素化学濃度分布は、第1水素濃度ピークと、前記第1水素濃度ピークよりも前記上面側で前記第1水素濃度ピークと隣り合う第2水素濃度ピークと、前記第2水素濃度ピークよりも前記上面側の第3水素濃度ピークと、前記第1水素濃度ピークよりも前記下面側の第4水素濃度ピークと、を含み、
前記第3極大点は、前記第3水素濃度ピークに対応している
請求項5に記載の半導体装置。 - 前記キャリア濃度分布は、前記ヘリウム濃度ピークよりも前記上面側において、前記第2水素濃度ピークおよび前記第3水素濃度ピークと同一の深さ位置か、または当該深さ位置から前記半導体基板の前記下面と当該深さ位置の距離の10%以内の範囲の深さ位置に、前記第2極大点および前記第3極大点が配置されていて、
前記ヘリウム濃度ピークよりも前記上面側において、前記第2極大点および前記第3極大点の間における前記キャリア濃度分布は、ピークを有さない
請求項13に記載の半導体装置。 - 前記水素含有領域の前記深さ方向における水素化学濃度分布は、第1水素濃度ピークと、前記第1水素濃度ピークよりも前記上面側で前記第1水素濃度ピークと隣り合う第2水素濃度ピークと、前記第2水素濃度ピークよりも前記上面側の第3水素濃度ピークと、前記第1水素濃度ピークよりも前記下面側の第4水素濃度ピークと、を含み、
前記第4極大点は、前記第4水素濃度ピークに対応している
請求項6に記載の半導体装置。 - 前記第1中間点は、前記ヘリウム濃度ピークと同一の深さ位置か、または当該深さ位置から前記下面と当該深さ位置の距離の10%以内の範囲の深さ位置に配置されている
請求項14に記載の半導体装置。 - 前記水素含有領域の深さ方向における空孔欠陥濃度分布は、前記第1中間点の前後における前記第1極大点および前記第2極大点の間にのみ分布する
請求項16に記載の半導体装置。 - 全ての前記水素濃度谷部において、前記水素化学濃度がヘリウム化学濃度以上である
請求項7から12のいずれか一項に記載の半導体装置。 - 上面および下面を有する半導体基板を備える半導体装置の製造方法であって、
前記半導体基板に水素を注入し、第1の熱処理を行って水素含有領域を形成し、
前記水素含有領域の少なくとも一部の領域にヘリウムが含まれるように、前記半導体基板にヘリウムを注入し、
前記半導体基板に第2の熱処理をし、
前記水素含有領域の深さ方向におけるキャリア濃度分布は、
キャリア濃度が極大値となる第1極大点と、
前記第1極大点よりも前記上面側において前記キャリア濃度が極大値となる点のうち、前記第1極大点の最も近くに配置された第2極大点と、
前記第1極大点および前記第2極大点の間に配置され、前記キャリア濃度が極小値となる第1中間点と、
前記第2極大点よりも前記上面側において前記キャリア濃度が極小値となるか、または、前記深さ方向において前記キャリア濃度が一定となる点のうち、前記第2極大点の最も近くに配置された第2中間点と
を含み、
前記ヘリウムの深さ方向におけるヘリウム化学濃度分布のヘリウム濃度ピークの頂点は、前記第1極大点および前記第2極大点の間に配置され、
前記第2の熱処理の後において、前記第1中間点における前記キャリア濃度は、前記第2中間点における前記キャリア濃度よりも低い
半導体装置の製造方法。 - 前記キャリア濃度分布は、前記第1極大点よりも前記下面側において前記キャリア濃度が極小値となるか、または、前記深さ方向において前記キャリア濃度が一定となる点のうち、前記第1極大点の最も近くに配置された第3中間点を含み、
前記第2の熱処理の後において、前記第1中間点の前記キャリア濃度が、前記第3中間点の前記キャリア濃度よりも低い
請求項19に記載の半導体装置の製造方法。 - 前記水素含有領域の深さ方向における水素化学濃度分布は1つ以上の水素濃度谷部を有し、少なくとも一つの前記水素濃度谷部が、水素化学濃度が酸素化学濃度の1/10以上となるように、前記半導体基板に前記水素を注入し、
少なくとも一つの前記水素濃度谷部において、前記水素化学濃度がヘリウム化学濃度以上となるように、前記半導体基板に前記水素を注入する
請求項19または20に記載の半導体装置の製造方法。 - 前記ヘリウム濃度ピークよりも深い位置に設けられた前記水素濃度谷部において、前記水素化学濃度がヘリウム化学濃度以上となるように、前記半導体基板に前記水素を注入する
請求項21に記載の半導体装置の製造方法。
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