JP7411320B2 - ソーラーセルアレイ用のナノ金属接続 - Google Patents
ソーラーセルアレイ用のナノ金属接続 Download PDFInfo
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- JP7411320B2 JP7411320B2 JP2017176672A JP2017176672A JP7411320B2 JP 7411320 B2 JP7411320 B2 JP 7411320B2 JP 2017176672 A JP2017176672 A JP 2017176672A JP 2017176672 A JP2017176672 A JP 2017176672A JP 7411320 B2 JP7411320 B2 JP 7411320B2
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- solar cell
- conductive element
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- electrical connection
- nanometallic
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- 238000003491 array Methods 0.000 title description 14
- 239000000758 substrate Substances 0.000 claims description 138
- 239000000463 material Substances 0.000 claims description 72
- 239000004020 conductor Substances 0.000 claims description 53
- 229910052751 metal Inorganic materials 0.000 claims description 52
- 239000002184 metal Substances 0.000 claims description 52
- 238000000034 method Methods 0.000 claims description 43
- 239000010410 layer Substances 0.000 claims description 40
- 239000002344 surface layer Substances 0.000 claims description 33
- 239000010949 copper Substances 0.000 claims description 25
- 239000010931 gold Substances 0.000 claims description 22
- 239000011888 foil Substances 0.000 claims description 17
- 229910052737 gold Inorganic materials 0.000 claims description 16
- 238000002844 melting Methods 0.000 claims description 16
- 230000008018 melting Effects 0.000 claims description 16
- 229910052709 silver Inorganic materials 0.000 claims description 16
- 239000002105 nanoparticle Substances 0.000 claims description 15
- 238000010438 heat treatment Methods 0.000 claims description 14
- 229910052802 copper Inorganic materials 0.000 claims description 11
- 239000000956 alloy Substances 0.000 claims description 8
- 239000007787 solid Substances 0.000 claims description 8
- 229910045601 alloy Inorganic materials 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 239000010944 silver (metal) Substances 0.000 claims description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 210000004027 cell Anatomy 0.000 description 307
- 229910000679 solder Inorganic materials 0.000 description 33
- 238000003466 welding Methods 0.000 description 16
- 238000004519 manufacturing process Methods 0.000 description 12
- 239000004642 Polyimide Substances 0.000 description 9
- 229920001721 polyimide Polymers 0.000 description 9
- 238000005382 thermal cycling Methods 0.000 description 9
- 238000013459 approach Methods 0.000 description 8
- 239000000203 mixture Substances 0.000 description 8
- 239000012071 phase Substances 0.000 description 8
- 239000000976 ink Substances 0.000 description 7
- 239000000853 adhesive Substances 0.000 description 6
- 230000001070 adhesive effect Effects 0.000 description 6
- 238000013461 design Methods 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- 230000008569 process Effects 0.000 description 5
- 238000005476 soldering Methods 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 239000006059 cover glass Substances 0.000 description 3
- 230000005496 eutectics Effects 0.000 description 3
- 239000007790 solid phase Substances 0.000 description 3
- 230000000712 assembly Effects 0.000 description 2
- 238000000429 assembly Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 238000009419 refurbishment Methods 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 229910000846 In alloy Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- JJWKPURADFRFRB-UHFFFAOYSA-N carbonyl sulfide Chemical compound O=C=S JJWKPURADFRFRB-UHFFFAOYSA-N 0.000 description 1
- 210000003850 cellular structure Anatomy 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000010309 melting process Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000010587 phase diagram Methods 0.000 description 1
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L31/02—Details
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
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- H—ELECTRICITY
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/142—Energy conversion devices
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
- H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
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- H01L31/02016—Circuit arrangements of general character for the devices
- H01L31/02019—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02021—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
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Description
例えば宇宙飛行用電力の用途に使用される、ソーラーセルアレイの設計に関する新たな手法は、アレイ内のソーラーセル間の電気的接続に基づいている。
宇宙用のソーラーセルアレイ22のための電気的接続は、非常に重要なものである。この電気的接続は、製造可能であると共に、主に軌道上での広範な熱サイクルの発生による困難な環境に耐えるよう、信頼性が高いものでなくてはならない。
この開示は、金属が露出していないソーラーセルアレイ22を形成するために、背面接点34を有するソーラーセル14が、基板12上のプリントされたコーナー導体20とどのように結合されうるかについても説明する。具体的には、ソーラーセル14内に貫通穴が形成される。次いで、ビアを作り出してソーラーセル14の前面接点32をソーラーセル14の背面接点34に接続し、レーザ溶接、はんだ付けを使用して、又は、ナノ金属ペースト若しくは他の導電性接着剤を付けることで、基板12のトレースと接続するために、貫通穴が金属でめっきされるか、又は貫通穴に金属が堆積される。
本開示の各例は、図18に示すステップ92~104を含む、ソーラーセル14、ソーラーセルパネル10a、及び/または人工衛星の製作方法90に関連して記載されていてよく、結果として製作される、ソーラーセル14からなるソーラーセルパネル10aを有する人工衛星106を、図19に示す。
Claims (16)
- 方法であって、
相互接続子を含む第1導電要素及び表面層を含む第2導電要素を使用して、ソーラーセル(14)と、前記ソーラーセルが取り付けられている基板(12)との間に電気的接続を形成することを含み、
前記第2導電要素は、前記ソーラーセル上の前面接点及び背面接点の少なくとも一方をさらに含み、
前記電気的接続を形成することが、
前記相互接続子と前記前面接点及び前記背面接点の少なくとも一方との間、並びに前記相互接続子と前記表面層との間にナノ金属材料(60)を挿入することと、
前記ソーラーセル及び前記第1導電要素の間に前記電気的接続を形成し、且つ前記第1導電要素及び前記第2導電要素の間に前記電気的接続を形成するよう、前記ナノ金属材料(60)を加熱することとを含み、
前記ソーラーセルは、複数の刈り込まれたコーナー部を有し、
前記基板の露出したままのエリアは、複数の前記コーナー部に囲まれ、前記基板内に埋設された一又は複数のコーナー導体を含み、前記表面層は前記コーナー導体上に形成されていて、前記ソーラーセルを前記基板に取り付けた後、前記ソーラーセル及び前記第1導電要素の間に前記電気的接続を形成し、且つ前記第1導電要素及び前記第2導電要素の間に前記電気的接続を形成することによって、前記ソーラーセルと前記コーナー導体との間で接続が行われる、方法。 - 前記相互接続子は、金属ホイルの相互接続子(76)である、請求項1に記載の方法。
- 前記表面層がめっきされた表面層である、請求項1又は2に記載の方法。
- 前記ナノ金属材料(60)が、前記電気的接続を形成するために固体へと溶解または融和する、金(Au)、銅(Cu)、銀(Ag)、及びアルミニウム(Al)のうちの一又は複数のナノ粒子を含む、ナノ金属のペースト又はインクを含む、請求項1から3のいずれか一項に記載の方法。
- 前記ナノ粒子が100nm未満のサイズを有する、請求項4に記載の方法。
- 前記ナノ粒子が0.5~10nmの範囲内のサイズを有する、請求項4に記載の方法。
- 前記ナノ金属材料(60)が、Agピースの間に置かれたAu、Cu、Ag、またはAlのナノ粒子を含む、請求項4に記載の方法。
- 前記ナノ金属材料(60)が、摂氏150~250度の溶解温度または固化温度を有する、請求項1から7のいずれか一項に記載の方法。
- 前記ナノ金属材料(60)が、摂氏175~225度の溶解温度または固化温度を有する、請求項1から7のいずれか一項に記載の方法。
- 前記ナノ金属材料(60)が合金ではない、請求項1から9のいずれか一項に記載の方法。
- 相互接続子を含む第1導電要素及び表面層を含む第2導電要素を使用してソーラーセル(14)と、前記ソーラーセルが取り付けられている基板(12)との間に形成された電気的接続を備える、物品であって、
前記第2導電要素は、前記ソーラーセル上の前面接点及び背面接点の少なくとも一方をさらに含み、
前記電気的接続が、
前記相互接続子と前記前面接点及び前記背面接点の少なくとも一方との間、並びに前記相互接続子と前記表面層との間に挿入されたナノ金属材料(60)を備え、
前記ナノ金属材料が、前記ソーラーセル及び前記第1導電要素の間に前記電気的接続を形成し、且つ前記第1導電要素及び前記第2導電要素の間に前記電気的接続を形成する、加熱されたナノ金属材料(60)であり、
前記ソーラーセルは、複数の刈り込まれたコーナー部を有し、
前記基板の露出したままのエリアは、複数の前記コーナー部に囲まれ、前記基板内に埋設された一又は複数のコーナー導体を含み、前記表面層は前記コーナー導体上に形成されていて、前記ソーラーセル及び前記第1導電要素の間に前記電気的接続が形成され、且つ前記第1導電要素及び前記第2導電要素の間に前記電気的接続が形成されることによって、前記ソーラーセルと前記コーナー導体とが接続されている、物品。 - 少なくとも1つのソーラーセル、及び、前記ソーラーセルが取り付けられている基板からなる、ソーラーセルアレイと、
相互接続子を含む第1導電要素及び前記基板上の表面層を含む第2導電要素を使用して前記ソーラーセルと前記ソーラーセルが取り付けられている前記基板との間に形成された電気的接続とを備える、ソーラーセルパネルであって、
前記第2導電要素は、前記ソーラーセル上の前面接点及び背面接点の少なくとも一方をさらに含み、
前記電気的接続が、
前記相互接続子と前記前面接点及び前記背面接点の少なくとも一方との間、並びに前記相互接続子と前記表面層との間に挿入されたナノ金属材料を備え、
前記ナノ金属材料が、前記ソーラーセル及び前記第1導電要素の間に前記電気的接続を形成し、且つ前記第1導電要素と前記第2導電要素との間に前記電気的接続を形成する、加熱されたナノ金属材料であり、
前記ソーラーセルは、複数の刈り込まれたコーナー部を有し、
前記基板の露出したままのエリアは、複数の前記コーナー部に囲まれ、前記基板内に埋設された一又は複数のコーナー導体を含み、前記表面層は前記コーナー導体上に形成されていて、前記ソーラーセル及び前記第1導電要素の間に前記電気的接続が形成され、且つ前記第1導電要素及び前記第2導電要素の間に前記電気的接続が形成されることによって、前記ソーラーセルと前記コーナー導体とが接続されている、ソーラーセルパネル。 - 方法であって、
ソーラーセルと基板との間に、相互接続子を含む第1導電要素、及び前記ソーラーセル上の前面接点及び前記基板上の表面層を含む第2導電要素を使用して電気的接続を形成することを含み、
前記第1導電要素は、ビアをさらに含み、
電気的接続を形成することが、
前記ビア及び前記表面層の間にナノ金属材料を挿入することと、
前記第1導電要素及び前記第2導電要素の間に前記電気的接続を形成するよう、前記ナノ金属材料を加熱することと、
前記ソーラーセルの前面と背面との間の前記ソーラーセル内に貫通穴を作り出すことと、
前記ソーラーセルの前記前面から前記背面まで前記ビアを作り出し、それによって、前記ソーラーセルの前記前面から前記背面まで電流を導通させるために、前記貫通穴の内部に導電層を堆積させることと、
前記電気的接続を形成するよう、前記前面接点と接続する前記ビアを前記基板のトレースに接続することとを含み、
前記ソーラーセルは、複数の刈り込まれたコーナー部を有し、
前記基板の露出したままのエリアは、複数の前記コーナー部に囲まれ、前記基板内に埋設された一又は複数のコーナー導体を含み、前記表面層は前記コーナー導体に接続された前記トレース上に形成されていて、前記ソーラーセルを前記基板に取り付けた後、前記第1導電要素及び前記第2導電要素の間に前記電気的接続を形成することによって、前記ソーラーセルと前記コーナー導体との間で接続が行われる、方法。 - 前記導電層が堆積される前に、前記ソーラーセルの前記前面と前記背面との間の前記ソーラーセル内の前記貫通穴の内部を不動態化することと、
前記貫通穴が不動態化された後、前記導電層が堆積される前に、前記貫通穴の内部に絶縁層を堆積させることとを更に含み、
前記絶縁層が、前記ソーラーセルの前面表面または背面表面の、前記貫通穴に隣接する部分を覆う、請求項13に記載の方法。 - ソーラーセルと基板との間に、相互接続子を含む第1導電要素、及び前記ソーラーセル上の前面接点及び前記基板上の表面層を含む第2導電要素を使用して形成された電気的接続を備える、物品であって、
前記第1導電要素は、ビアをさらに含み、
前記電気的接続が、
前記ビアと前記表面層との間に挿入されたナノ金属材料と、
前記ソーラーセルの前面と背面との間の前記ソーラーセル内に作り出された、貫通穴と、
前記ソーラーセルの前記前面から前記背面まで前記ビアを作り出し、それによって、前記ソーラーセルの前記前面から前記背面まで電流を導通させるために、前記貫通穴の内部に堆積された導電層とを備え、
前記前面接点に接続された前記ビアが、前記電気的接続を形成するよう、前記基板のトレースに接続されており、
前記ナノ金属材料が、前記第1導電要素と前記第2導電要素との間に前記電気的接続を形成する、加熱されたナノ金属材料であり、
前記ソーラーセルは、複数の刈り込まれたコーナー部を有し、
前記基板の露出したままのエリアは、複数の前記コーナー部に囲まれ、前記基板内に埋設された一又は複数のコーナー導体を含み、前記表面層は前記コーナー導体に接続された前記トレース上に形成されていて、前記第1導電要素及び前記第2導電要素の間に前記電気的接続が形成されることによって、前記ソーラーセルと前記コーナー導体とが接続されている、物品。 - 少なくとも1つのソーラーセル及び前記ソーラーセル用の基板からなる、ソーラーセルアレイ、及び、
前記ソーラーセルと前記基板との間に、相互接続子を含む第1導電要素、及び前記ソーラーセル上の前面接点及び前記基板上の表面層を含む第2導電要素を使用して形成された電気的接続を備える、ソーラーセルパネルであって、
前記第1導電要素は、ビアをさらに含み、
前記電気的接続が、
前記ビアと前記表面層との間に挿入されたナノ金属材料と、
前記少なくとも1つのソーラーセルの前面と背面との間の前記ソーラーセル内に作り出された、貫通穴と、
前記ソーラーセルの前記前面から前記背面まで前記ビアを作り出し、それによって、前記ソーラーセルの前記前面から前記背面まで電流を導通させるために、前記貫通穴の内部に堆積された導電層とを備え、
前記前面接点に接続された前記ビアが、前記電気的接続を形成するよう、前記基板のトレースに接続されており、
前記ナノ金属材料が、前記第1導電要素と前記第2導電要素との間に前記電気的接続を形成する、加熱されたナノ金属材料であり、
前記ソーラーセルは、複数の刈り込まれたコーナー部を有し、
前記基板の露出したままのエリアは、複数の前記コーナー部に囲まれ、前記基板内に埋設された一又は複数のコーナー導体を含み、前記表面層は前記コーナー導体に接続された前記トレース上に形成されていて、前記第1導電要素及び前記第2導電要素の間に前記電気的接続が形成されることによって、前記ソーラーセルと前記コーナー導体とが接続されている、ソーラーセルパネル。
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Application Number | Priority Date | Filing Date | Title |
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US201662394623P | 2016-09-14 | 2016-09-14 | |
US201662394616P | 2016-09-14 | 2016-09-14 | |
US201662394667P | 2016-09-14 | 2016-09-14 | |
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JP2017176670A Active JP7475804B2 (ja) | 2016-09-14 | 2017-09-14 | ソーラーセルアレイ用の電力ルーティングモジュール |
JP2017176667A Active JP7295612B2 (ja) | 2016-09-14 | 2017-09-14 | ソーラーセルアレイためのコーナー接続を促進するための、基板上のあらかじめ製作された導体 |
JP2017176671A Active JP7475805B2 (ja) | 2016-09-14 | 2017-09-14 | コーナー導体を使用するソーラーセルアレイ接続 |
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JP2017176672A Active JP7411320B2 (ja) | 2016-09-14 | 2017-09-14 | ソーラーセルアレイ用のナノ金属接続 |
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Family Applications Before (5)
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JP2017176667A Active JP7295612B2 (ja) | 2016-09-14 | 2017-09-14 | ソーラーセルアレイためのコーナー接続を促進するための、基板上のあらかじめ製作された導体 |
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Family Applications After (6)
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Also Published As
Publication number | Publication date |
---|---|
US20180076350A1 (en) | 2018-03-15 |
EP4235815A2 (en) | 2023-08-30 |
JP2023002572A (ja) | 2023-01-10 |
JP2018082153A (ja) | 2018-05-24 |
EP4273940A3 (en) | 2023-12-13 |
EP4273940A2 (en) | 2023-11-08 |
JP7171175B2 (ja) | 2022-11-15 |
JP2023022029A (ja) | 2023-02-14 |
EP4235810A2 (en) | 2023-08-30 |
JP2018078278A (ja) | 2018-05-17 |
JP2018082608A (ja) | 2018-05-24 |
JP2018082151A (ja) | 2018-05-24 |
JP2022188130A (ja) | 2022-12-20 |
EP4235815A3 (en) | 2024-03-13 |
EP4235810A3 (en) | 2023-10-18 |
JP2022188129A (ja) | 2022-12-20 |
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ES2970380T3 (es) | 2024-05-28 |
JP7475804B2 (ja) | 2024-04-30 |
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JP7475805B2 (ja) | 2024-04-30 |
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US20200373446A1 (en) | 2020-11-26 |
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