JP7295866B2 - グリッドを製造するための方法 - Google Patents
グリッドを製造するための方法 Download PDFInfo
- Publication number
- JP7295866B2 JP7295866B2 JP2020537040A JP2020537040A JP7295866B2 JP 7295866 B2 JP7295866 B2 JP 7295866B2 JP 2020537040 A JP2020537040 A JP 2020537040A JP 2020537040 A JP2020537040 A JP 2020537040A JP 7295866 B2 JP7295866 B2 JP 7295866B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- layer
- regions
- isolated
- doping
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims description 63
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 239000004065 semiconductor Substances 0.000 claims description 46
- 239000000463 material Substances 0.000 claims description 28
- 238000005468 ion implantation Methods 0.000 claims description 22
- 239000000758 substrate Substances 0.000 claims description 16
- 239000002019 doping agent Substances 0.000 claims description 7
- 150000002500 ions Chemical class 0.000 claims description 7
- 238000009792 diffusion process Methods 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 6
- 238000000137 annealing Methods 0.000 claims description 5
- 229910052796 boron Inorganic materials 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 238000001312 dry etching Methods 0.000 claims description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 19
- 229910010271 silicon carbide Inorganic materials 0.000 description 19
- 230000005684 electric field Effects 0.000 description 12
- 230000008901 benefit Effects 0.000 description 10
- 239000007943 implant Substances 0.000 description 10
- 230000000903 blocking effect Effects 0.000 description 3
- 238000003475 lamination Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02167—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon carbide not containing oxygen, e.g. SiC, SiC:H or silicon carbonitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02441—Group 14 semiconducting materials
- H01L21/02447—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02529—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02634—Homoepitaxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/0455—Making n or p doped regions or layers, e.g. using diffusion
- H01L21/046—Making n or p doped regions or layers, e.g. using diffusion using ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28537—Deposition of Schottky electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
- H01L29/0623—Buried supplementary region, e.g. buried guard ring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1066—Gate region of field-effect devices with PN junction gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/6606—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
- H01L29/8083—Vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Plasma & Fusion (AREA)
- Electrodes Of Semiconductors (AREA)
- Thyristors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Photovoltaic Devices (AREA)
- Chemical Vapour Deposition (AREA)
Description
a)ドープした半導体SiC材料を含む基板を用意するステップであって、前記基板が、第1の層n1を含む、用意するステップと、
b)エピタキシャル成長によって、上記第1の層n1上に分離された第2の領域p2を形成するために少なくとも1つのドープした半導体SiC材料を付加するステップであって、必要であれば、上記第1の層n1上に分離された第2の領域p2を形成するために上記付加した半導体材料の一部を除去するステップを用いる、付加するステップと、
c)イオン注入によって、ステップa)の直後、及びステップb)の直後からなる群から選択される段階において少なくとも1回、第1の領域p1を形成するために上記第1の層n1にイオンを注入するステップであって、上記第2の領域p2のすべてが第1の領域p1と接触している、注入するステップと
を含む。
a)ドープした半導体SiC材料を含む基板を用意するステップであって、前記基板が第1の層n1を含む、用意するステップと、
b)エピタキシャル成長によって、上記第1の層n1上に分離された第2の領域p2を形成するために少なくとも1つのドープした半導体SiC材料を付加するステップであって、必要であれば、上記第1の層n1上に分離された第2の領域p2を形成するために上記付加した半導体材料の一部を除去するステップを用いる、付加するステップと、
c)イオン注入によって、ステップa)の直後、及びステップb)の直後からなる群から選択される段階において少なくとも1回、第1の領域p1を形成するために上記第1の層n1にイオンを注入するステップであって、上記第2の領域p2のすべてが第1の領域p1と接触している、注入するステップと
を含む。
Claims (24)
- SiC半導体材料におけるグリッド構造の製造のための方法であって、前記方法は、
(a)ドープした半導体SiC材料を含む基板を用意するステップであり、前記基板が、第1の導電型の第1の層(n1)を含む、用意するステップと、
(b)エピタキシャル成長によって、前記第1の層(n1)上に、分離された第2の領域(p2)を形成するためにドープした半導体SiC材料の少なくとも1つの層を付加するステップと、
(c)イオン注入によって、ステップ(a)の後及びステップ(b)の前に、又は、ステップ(b)の後に、少なくとも1回、前記第1の導電型の反対の第2の導電型の第1の領域(p1)を形成するために前記第1の層(n1)にイオンを注入するステップであり、前記分離された第2の領域(p2)のそれぞれが、前記第1の領域(p1)のうちの1つと接触している、注入するステップと、
(d)エピタキシャル成長によって、ステップ(c)の後に、前記分離された第2の領域(p2)上及び前記第1の層(n1)上に第2の層(n2)を成長させるステップと
を含み、
前記第1の領域(p1)は、インターバル1e18~1e19cm-3の第1のドーピング濃度を有しており、
前記分離された第2の領域(p2)は、インターバル5e19~3e20cm-3の第2のドーピング濃度を有している、方法。 - 前記ステップ(a)は、
前記第1の層(n1)を含む前記基板を用意するステップと、
前記第1の層(n1)上に第2の層(n2)を成長させるエピタキシャル成長、続いて、一定のエリア上の前記第2の層(n2)全体を貫通するエッチングと
を含み、
前記ステップ(b)は、エッチングされたエリアの底面上に前記分離された第2の領域(p2)を形成するステップを含む、請求項1に記載の方法。 - 前記第1の領域(p1)の一部分は、前記分離された第2の領域(p2)の一部分をその上に有する、請求項1または2に記載の方法。
- 前記第1の領域(p1)のそれぞれは、前記分離された第2の領域(p2)の一部分をその上に有する、請求項1または2に記載の方法。
- 前記第1の領域(p1)と接触している前記分離された第2の領域(p2)の下側表面が、前記第1の領域(p1)の上側表面よりも小さい、請求項1から4までのいずれか一項に記載の方法。
- ステップ(b)での前記エピタキシャル成長が、インターバル0.1~3.0μmの厚さを有する層を付加する、請求項1から5までのいずれか一項に記載の方法。
- ステップ(b)での前記エピタキシャル成長が、ドーパントとしてAlを利用する、請求項1から6までのいずれか一項に記載の方法。
- ステップ(b)での前記のエピタキシャル成長が、インターバル5e19~3e20cm-3の第2のドーピング濃度を有する少なくとも1つの層を付加する、請求項1から7までのいずれか一項に記載の方法。
- ステップ(b)で付加された前記少なくとも1つの層は、前記第1の領域(p1)から最も遠くで、より高いドーピング濃度を有するドーピング勾配を有する、請求項1から8までのいずれか一項に記載の方法。
- ステップ(b)は、前記第1の層(n1)の上に前記分離された第2の領域(p2)を形成するためにドライ・エッチングによって、前記ドープした半導体材料の少なくとも1つの層の一部を除去するステップを含む、請求項1から9までのいずれか一項に記載の方法。
- ステップ(c)での前記イオン注入が、ステップ(a)の後及びステップ(b)の前にだけ実行され、ステップ(b)の後には実行されない、請求項1から10までのいずれか一項に記載の方法。
- ステップ(b)での前記エピタキシャル成長が、前記第1の領域(p1)内の前記注入したイオンのアニーリングと同時に実行される、請求項11に記載の方法。
- 前記イオン注入が、350keV未満のエネルギーで実行される、請求項1から12までのいずれか一項に記載の方法。
- 前記第1の領域(p1)が、インターバル0.2~2.0μmの厚さを有する、請求項1から13までのいずれか一項に記載の方法。
- 前記第1の領域(p1)が、前記第2の領域(p2)に向かってより高いドーピング濃度をともなうドーピング勾配を有する、請求項1から14までのいずれか一項に記載の方法。
- Al及びBからなる群から選択される少なくとも1つが、前記第1の領域(p1)のドーピングのために利用される、請求項1から15までのいずれか一項に記載の方法。
- Alが、前記分離された第2の領域(p2)のドーピングのために利用され、Bが、前記第1の領域(p1)のドーピングのために利用される、請求項1から16までのいずれか一項に記載の方法。
- Bが、前記第1の領域(p1)のドーピングのために利用され、ステップ(c)において実行された前記イオン注入ステップの後に拡散ステップが続く、請求項1から17までのいずれか一項に記載の方法。
- 前記第2の層(n2)の前記エピタキシャル成長は、前記第2の層(n2)の厚さがインターバル0.5~3μmになるように実行される、請求項1に記載の方法。
- 表面平坦化ステップが、前記第2の層(n2)を成長させるステップの後に実行される、請求項1に記載の方法。
- オーミック・コンタクトが、前記分離された第2の領域(p2)のうちの少なくとも1つの上に直接作られる、請求項1から20までのいずれか一項に記載の方法。
- ショットキー・コンタクトが、前記第2の層(n2)の少なくとも一部の上に作られる、請求項1に記載の方法。
- 前記分離された第2の領域(p2)のうちの2つの間の間隔に対する前記第2の領域(p2)の厚さの比率は、前記分離された第2の領域(p2)のうちの任意の2つの間のそれぞれのスペースについて、1よりも小さい、請求項1から22までのいずれか一項に記載の方法。
- 前記第1の領域(p1)のうちの少なくとも1つは、デバイスのエッジ終端化を画定する、請求項1から23までのいずれか一項に記載の方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2023095491A JP2023110083A (ja) | 2017-09-15 | 2023-06-09 | グリッドを製造するための方法 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE1751138A SE541290C2 (en) | 2017-09-15 | 2017-09-15 | A method for manufacturing a grid |
SE1751138-7 | 2017-09-15 | ||
PCT/EP2018/074908 WO2019053202A1 (en) | 2017-09-15 | 2018-09-14 | METHOD FOR MANUFACTURING A DOPED P GRID IN A N-DOPED SIC LAYER |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2023095491A Division JP2023110083A (ja) | 2017-09-15 | 2023-06-09 | グリッドを製造するための方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2020533810A JP2020533810A (ja) | 2020-11-19 |
JP7295866B2 true JP7295866B2 (ja) | 2023-06-21 |
Family
ID=63592739
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2020537040A Active JP7295866B2 (ja) | 2017-09-15 | 2018-09-14 | グリッドを製造するための方法 |
JP2023095491A Pending JP2023110083A (ja) | 2017-09-15 | 2023-06-09 | グリッドを製造するための方法 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2023095491A Pending JP2023110083A (ja) | 2017-09-15 | 2023-06-09 | グリッドを製造するための方法 |
Country Status (7)
Country | Link |
---|---|
US (3) | US11342423B2 (ja) |
EP (2) | EP3682467B1 (ja) |
JP (2) | JP7295866B2 (ja) |
CN (2) | CN111194477B (ja) |
ES (1) | ES2940409T3 (ja) |
SE (1) | SE541290C2 (ja) |
WO (1) | WO2019053202A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115295614B (zh) * | 2022-10-08 | 2023-02-03 | 成都功成半导体有限公司 | 一种碳化硅jfet结构及其制备方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009532902A (ja) | 2006-04-04 | 2009-09-10 | セミサウス ラボラトリーズ インコーポレイテッド | 接合障壁ショットキー整流器およびその製造方法 |
CN103000698A (zh) | 2012-11-23 | 2013-03-27 | 中国科学院微电子研究所 | 一种SiC结势垒肖特基二极管及其制作方法 |
JP2015173158A (ja) | 2014-03-11 | 2015-10-01 | 住友電気工業株式会社 | ワイドバンドギャップ半導体装置 |
Family Cites Families (40)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL196122A (ja) | 1951-11-30 | 1900-01-01 | ||
JPH08204179A (ja) | 1995-01-26 | 1996-08-09 | Fuji Electric Co Ltd | 炭化ケイ素トレンチmosfet |
US6049108A (en) | 1995-06-02 | 2000-04-11 | Siliconix Incorporated | Trench-gated MOSFET with bidirectional voltage clamping |
JP3392665B2 (ja) | 1995-11-06 | 2003-03-31 | 株式会社東芝 | 半導体装置 |
SE9601176D0 (sv) | 1996-03-27 | 1996-03-27 | Abb Research Ltd | A method for producing a semiconductor device having semiconductor layers of SiC by the use of an implanting step and a device produced thereby |
SE9700141D0 (sv) | 1997-01-20 | 1997-01-20 | Abb Research Ltd | A schottky diode of SiC and a method for production thereof |
US6011279A (en) * | 1997-04-30 | 2000-01-04 | Cree Research, Inc. | Silicon carbide field controlled bipolar switch |
SE9704149D0 (sv) | 1997-11-13 | 1997-11-13 | Abb Research Ltd | A semiconductor device of SiC and a transistor of SiC having an insulated gate |
ATE288623T1 (de) | 1999-09-22 | 2005-02-15 | Siced Elect Dev Gmbh & Co Kg | Sic-halbleitervorrichtung mit einem schottky- kontakt und verfahren zu deren herstellung |
FR2816113A1 (fr) | 2000-10-31 | 2002-05-03 | St Microelectronics Sa | Procede de realisation d'une zone dopee dans du carbure de silicium et application a une diode schottky |
US6573128B1 (en) | 2000-11-28 | 2003-06-03 | Cree, Inc. | Epitaxial edge termination for silicon carbide Schottky devices and methods of fabricating silicon carbide devices incorporating same |
US6855998B2 (en) | 2002-03-26 | 2005-02-15 | Kabushiki Kaisha Toshiba | Semiconductor device |
US6979863B2 (en) | 2003-04-24 | 2005-12-27 | Cree, Inc. | Silicon carbide MOSFETs with integrated antiparallel junction barrier Schottky free wheeling diodes and methods of fabricating the same |
JP4585772B2 (ja) | 2004-02-06 | 2010-11-24 | 関西電力株式会社 | 高耐圧ワイドギャップ半導体装置及び電力装置 |
US8901699B2 (en) | 2005-05-11 | 2014-12-02 | Cree, Inc. | Silicon carbide junction barrier Schottky diodes with suppressed minority carrier injection |
JP2007012858A (ja) | 2005-06-30 | 2007-01-18 | Toshiba Corp | 半導体素子及びその製造方法 |
US20070029573A1 (en) | 2005-08-08 | 2007-02-08 | Lin Cheng | Vertical-channel junction field-effect transistors having buried gates and methods of making |
DE102005048447B4 (de) * | 2005-10-07 | 2007-07-19 | Infineon Technologies Ag | Halbleiterleistungsbauelement mit Ladungskompensationsstruktur und Verfahren zur Herstellung desselben |
JP5071763B2 (ja) * | 2006-10-16 | 2012-11-14 | 独立行政法人産業技術総合研究所 | 炭化ケイ素半導体装置およびその製造方法 |
US7829709B1 (en) | 2007-08-10 | 2010-11-09 | Marquette University | Cysteine prodrugs to treat schizophrenia and drug addiction |
US8421148B2 (en) | 2007-09-14 | 2013-04-16 | Cree, Inc. | Grid-UMOSFET with electric field shielding of gate oxide |
EP2058854B1 (en) | 2007-11-07 | 2014-12-03 | Acreo Swedish ICT AB | A semiconductor device |
US8704295B1 (en) | 2008-02-14 | 2014-04-22 | Maxpower Semiconductor, Inc. | Schottky and MOSFET+Schottky structures, devices, and methods |
US7851881B1 (en) * | 2008-03-21 | 2010-12-14 | Microsemi Corporation | Schottky barrier diode (SBD) and its off-shoot merged PN/Schottky diode or junction barrier Schottky (JBS) diode |
JP5881322B2 (ja) | 2011-04-06 | 2016-03-09 | ローム株式会社 | 半導体装置 |
JP6098514B2 (ja) * | 2011-08-29 | 2017-03-22 | 富士電機株式会社 | 双方向素子、双方向素子回路および電力変換装置 |
US8952481B2 (en) | 2012-11-20 | 2015-02-10 | Cree, Inc. | Super surge diodes |
US9142668B2 (en) | 2013-03-13 | 2015-09-22 | Cree, Inc. | Field effect transistor devices with buried well protection regions |
CN103354208B (zh) * | 2013-05-20 | 2016-01-06 | 泰科天润半导体科技(北京)有限公司 | 一种碳化硅沟槽型jfet的制作方法 |
JP2014241368A (ja) | 2013-06-12 | 2014-12-25 | 住友電気工業株式会社 | 炭化珪素半導体装置 |
US10062749B2 (en) | 2013-06-18 | 2018-08-28 | Monolith Semiconductor Inc. | High voltage semiconductor devices and methods of making the devices |
CN103606551B (zh) * | 2013-10-18 | 2016-08-17 | 泰科天润半导体科技(北京)有限公司 | 碳化硅沟槽型半导体器件及其制作方法 |
EP2884538A1 (en) * | 2013-12-16 | 2015-06-17 | ABB Technology AB | Power semiconductor device |
EP2889915A1 (en) * | 2013-12-30 | 2015-07-01 | ABB Technology AG | Power semiconductor device |
DE102014200429A1 (de) | 2014-01-13 | 2015-07-16 | Robert Bosch Gmbh | Trench-MOSFET-Transistorvorrichtung, Substrat für Trench-MOSFET-Transistorvorrichtung und entsprechendes Herstellungsverfahren |
US9583482B2 (en) | 2015-02-11 | 2017-02-28 | Monolith Semiconductor Inc. | High voltage semiconductor devices and methods of making the devices |
JP6400544B2 (ja) | 2015-09-11 | 2018-10-03 | 株式会社東芝 | 半導体装置 |
JP6687504B2 (ja) * | 2016-12-19 | 2020-04-22 | トヨタ自動車株式会社 | スイッチング素子の製造方法 |
SE541571C2 (en) * | 2017-09-15 | 2019-11-05 | Ascatron Ab | A double grid structure |
JP7059556B2 (ja) * | 2017-10-05 | 2022-04-26 | 富士電機株式会社 | 半導体装置 |
-
2017
- 2017-09-15 SE SE1751138A patent/SE541290C2/en unknown
-
2018
- 2018-09-14 EP EP18770009.1A patent/EP3682467B1/en active Active
- 2018-09-14 JP JP2020537040A patent/JP7295866B2/ja active Active
- 2018-09-14 CN CN201880059862.8A patent/CN111194477B/zh active Active
- 2018-09-14 ES ES18770009T patent/ES2940409T3/es active Active
- 2018-09-14 CN CN202410318815.8A patent/CN118335773A/zh active Pending
- 2018-09-14 EP EP22216033.5A patent/EP4250339A3/en active Pending
- 2018-09-14 WO PCT/EP2018/074908 patent/WO2019053202A1/en unknown
- 2018-09-14 US US16/647,094 patent/US11342423B2/en active Active
-
2022
- 2022-04-27 US US17/660,888 patent/US11876116B2/en active Active
-
2023
- 2023-06-09 JP JP2023095491A patent/JP2023110083A/ja active Pending
- 2023-12-01 US US18/526,516 patent/US20240105783A1/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009532902A (ja) | 2006-04-04 | 2009-09-10 | セミサウス ラボラトリーズ インコーポレイテッド | 接合障壁ショットキー整流器およびその製造方法 |
CN103000698A (zh) | 2012-11-23 | 2013-03-27 | 中国科学院微电子研究所 | 一种SiC结势垒肖特基二极管及其制作方法 |
JP2015173158A (ja) | 2014-03-11 | 2015-10-01 | 住友電気工業株式会社 | ワイドバンドギャップ半導体装置 |
Also Published As
Publication number | Publication date |
---|---|
US20200219985A1 (en) | 2020-07-09 |
ES2940409T3 (es) | 2023-05-08 |
US20240105783A1 (en) | 2024-03-28 |
EP4250339A3 (en) | 2023-12-06 |
EP4250339A2 (en) | 2023-09-27 |
SE1751138A1 (en) | 2019-03-16 |
CN111194477B (zh) | 2024-04-05 |
EP3682467B1 (en) | 2022-12-28 |
US11876116B2 (en) | 2024-01-16 |
SE541290C2 (en) | 2019-06-11 |
JP2020533810A (ja) | 2020-11-19 |
CN111194477A (zh) | 2020-05-22 |
EP3682467A1 (en) | 2020-07-22 |
US20220254887A1 (en) | 2022-08-11 |
CN118335773A (zh) | 2024-07-12 |
JP2023110083A (ja) | 2023-08-08 |
US11342423B2 (en) | 2022-05-24 |
WO2019053202A1 (en) | 2019-03-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP3938964B2 (ja) | 高耐圧半導体装置およびその製造方法 | |
KR100731141B1 (ko) | 반도체소자 및 그의 제조방법 | |
US8785945B2 (en) | SiC bipolar junction transistor with overgrown emitter | |
JP2004247545A (ja) | 半導体装置及びその製造方法 | |
JP2011029233A (ja) | 電力用半導体素子およびその製造方法 | |
JP2008258443A (ja) | 電力用半導体素子及びその製造方法 | |
US20130082285A1 (en) | Semiconductor device and process for production thereof | |
CN104380458A (zh) | 利用电导调制在氮化镓材料中用于结终端的方法和系统 | |
JP2003101022A (ja) | 電力用半導体素子 | |
JP4755439B2 (ja) | 半導体装置およびその製造方法 | |
US20240105783A1 (en) | Method for manufacturing a grid | |
US20230147611A1 (en) | Feeder design with high current capability | |
KR102100863B1 (ko) | SiC MOSFET 전력 반도체 소자 | |
US20090159896A1 (en) | Silicon carbide mosfet devices and methods of making | |
JP2006186134A (ja) | 半導体装置 | |
JP5996611B2 (ja) | 横チャネル領域を有する接合型電界効果トランジスタセル | |
JP4048856B2 (ja) | 半導体装置の製造方法 | |
JP2009130106A (ja) | 半導体装置及びその製造方法 | |
JP6246700B2 (ja) | 横チャネル領域を有する接合型電界効果トランジスタセル | |
CN107359209B (zh) | 半导体器件及相应制造方法 | |
JP2007128926A (ja) | 整流用半導体装置とその製造方法 | |
CN113454791A (zh) | 用于制作电荷平衡(cb)沟槽金属氧化物半导体场效应晶体管(mosfet)器件的技术 | |
KR20150001589A (ko) | 파워 반도체 소자 및 그 제조 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A529 | Written submission of copy of amendment under article 34 pct |
Free format text: JAPANESE INTERMEDIATE CODE: A529 Effective date: 20200508 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20210702 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20220620 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20220624 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20220922 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20221124 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20221222 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20230215 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20230313 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20230510 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20230609 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7295866 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |