JP6246700B2 - 横チャネル領域を有する接合型電界効果トランジスタセル - Google Patents
横チャネル領域を有する接合型電界効果トランジスタセル Download PDFInfo
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- 230000005669 field effect Effects 0.000 title claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 56
- 238000002513 implantation Methods 0.000 claims description 48
- 239000012535 impurity Substances 0.000 claims description 35
- 238000000034 method Methods 0.000 claims description 32
- 238000011065 in-situ storage Methods 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims 2
- 108091006146 Channels Proteins 0.000 description 77
- 239000000758 substrate Substances 0.000 description 15
- 229910010271 silicon carbide Inorganic materials 0.000 description 12
- 239000000463 material Substances 0.000 description 11
- 239000013078 crystal Substances 0.000 description 10
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 8
- 239000007943 implant Substances 0.000 description 7
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000005530 etching Methods 0.000 description 5
- 125000006850 spacer group Chemical group 0.000 description 5
- 238000000407 epitaxy Methods 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 229910002601 GaN Inorganic materials 0.000 description 2
- 102000004129 N-Type Calcium Channels Human genes 0.000 description 2
- 108090000699 N-Type Calcium Channels Proteins 0.000 description 2
- 230000005465 channeling Effects 0.000 description 2
- 238000007373 indentation Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
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- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
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- 230000008054 signal transmission Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
- H01L29/8083—Vertical transistors
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/0455—Making n or p doped regions or layers, e.g. using diffusion
- H01L21/046—Making n or p doped regions or layers, e.g. using diffusion using ion implantation
- H01L21/0465—Making n or p doped regions or layers, e.g. using diffusion using ion implantation using masks
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/266—Bombardment with radiation with high-energy radiation producing ion implantation using masks
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1058—Channel region of field-effect devices of field-effect transistors with PN junction gate
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1066—Gate region of field-effect devices with PN junction gate
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66893—Unipolar field-effect transistors with a PN junction gate, i.e. JFET
- H01L29/66901—Unipolar field-effect transistors with a PN junction gate, i.e. JFET with a PN homojunction gate
- H01L29/66909—Vertical transistors, e.g. tecnetrons
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/2654—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/1608—Silicon carbide
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
Description
101 第1の表面
101a、101b プロセス表面
102 第2の表面
110 ソース領域
115 横チャネル領域
115a 第1のゾーン
115b 第2のゾーン
115c 第1の接続ゾーン
115d 第2の接続ゾーン
115e 第3の接続ゾーン
115x チャネル層
120 ドリフトゾーン
120a 第1のエピタキシャル層
121 垂直チャネル領域
130 ドレイン層
130a 台座層
140 埋め込みゲート領域
150 上部ゲート領域
150a 上部ゲート層
310 ソース電極
330 ドレイン電極
340 第2のゲート電極
350 ゲート電極
401 第1の注入マスク
402 第2の注入マスク
402a スペーサ部分
403 第3の注入マスク
404 第4の注入マスク
430 エッチングマスク
500 半導体素子
500a 半導体基板
710 n型不純物プロファイル
711、712、713 注入不純物プロファイル
720 注入プロファイル
Claims (4)
- 垂直方向に沿って配列された、上部ゲート領域と、横チャネル領域と、埋め込みゲート領域とを備える接合型電界効果トランジスタセルを備える半導体素子であって、
前記横チャネル領域は、第1の導電型の第1のゾーンと、第2の導電型の第2のゾーンとを備え、前記第1および第2のゾーンは、前記垂直方向に垂直な横方向に沿って交互に配置され、
前記上部および埋め込みゲート領域は、前記第2の導電型を有し、前記第2のゾーンは、前記上部ゲート領域に直接隣接し、
前記第1のゾーンに直接隣接する前記第1の導電型のソース領域をさらに備え、
前記ソース領域は、前記横チャネル領域と前記埋め込みゲート領域との間にある、半導体素子。 - 垂直方向に沿って配列された、上部ゲート領域と、横チャネル領域と、埋め込みゲート領域とを備える接合型電界効果トランジスタセルを備える半導体素子であって、
前記横チャネル領域は、第1の導電型の第1のゾーンと、第2の導電型の第2のゾーンとを備え、前記第1および第2のゾーンは、前記垂直方向に垂直な横方向に沿って交互に配置され、
前記上部および埋め込みゲート領域は、前記第2の導電型を有し、前記第2のゾーンは、前記上部ゲート領域に直接隣接し、
前記第1のゾーンに直接隣接する前記第1の導電型のソース領域をさらに備え、
前記ソース領域は、前記埋め込みゲート領域とは反対側の前記横チャネル領域の側面上にある、半導体素子。 - 半導体素子を製造する方法であって、
第1の導電型の第1のエピタキシャル層のプロセス表面の第1のセクションに、第2の導電型の少なくとも1つの埋め込みゲート領域を形成することと、
前記プロセス表面上に、チャネル層を形成することと、
前記チャネル層に、前記チャネル層の表面から前記少なくとも1つの埋め込みゲート領域まで下がって延在する第1の導電型の第1のゾーンおよび第2の導電型の第2のゾーンをそれぞれ形成することと、
前記第1および第2のゾーンに直接隣接する上部ゲート領域を形成することと、
前記第2のゾーンのためのエリアを被覆し、前記第1のゾーンに割り当てられた前記エリアを露出させる開口部を備える注入マスクを提供することと、
前記チャネル層の中へ前記開口部を通じて前記第1の導電型の不純物を注入することとを含み、
前記第1および第2のゾーンを形成することは、
前記第1のゾーンのためのエリアを被覆し、前記第2のゾーンに割り当てられた前記エリアを露出させる開口部を備える注入マスクを提供することと、
前記チャネル層の中へ前記開口部を通じて前記第2の導電型の不純物を注入することと
を含む、方法。 - 前記チャネル層は前記第1の導電型の不純物を含み、前記第1および第2のゾーンを形成することは、
前記チャネル層の中に延在する空洞を形成することと、
前記空洞を充填するため、第2の導電型のin−situドープされた層を堆積させることであって、充填された空洞は前記第2のゾーンを提供し、前記空洞間のメサは前記第1のゾーンを形成する、堆積させることと
を含む、請求項3に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/083,023 US9425327B2 (en) | 2013-11-18 | 2013-11-18 | Junction field effect transistor cell with lateral channel region |
US14/083,023 | 2013-11-18 |
Publications (2)
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JP2015099921A JP2015099921A (ja) | 2015-05-28 |
JP6246700B2 true JP6246700B2 (ja) | 2017-12-13 |
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JP2014230624A Active JP6246700B2 (ja) | 2013-11-18 | 2014-11-13 | 横チャネル領域を有する接合型電界効果トランジスタセル |
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US (1) | US9425327B2 (ja) |
JP (1) | JP6246700B2 (ja) |
DE (1) | DE102014116628A1 (ja) |
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JP2000269518A (ja) | 1999-03-18 | 2000-09-29 | Toshiba Corp | 電力用半導体素子及び半導体層の形成方法 |
JP4830213B2 (ja) * | 2001-05-08 | 2011-12-07 | 株式会社デンソー | 炭化珪素半導体装置及びその製造方法 |
JP4122880B2 (ja) | 2002-07-24 | 2008-07-23 | 住友電気工業株式会社 | 縦型接合型電界効果トランジスタ |
JP4250144B2 (ja) * | 2003-03-19 | 2009-04-08 | サイスド エレクトロニクス デヴェロプメント ゲゼルシャフト ミット ベシュレンクテル ハフツング ウント コンパニ コマンディートゲゼルシャフト | 高ドープのチャネル伝導領域を持つ半導体装置とその製造方法 |
US7180105B2 (en) | 2004-02-09 | 2007-02-20 | International Rectifier Corporation | Normally off JFET |
JP2008016747A (ja) | 2006-07-10 | 2008-01-24 | Fuji Electric Holdings Co Ltd | トレンチmos型炭化珪素半導体装置およびその製造方法 |
US8183666B2 (en) * | 2009-10-29 | 2012-05-22 | Infineon Technologies Ag | Semiconductor device including semiconductor zones and manufacturing method |
US8242584B2 (en) * | 2009-12-28 | 2012-08-14 | International Business Machines Corporation | Structure and method to create stress trench |
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US20150137143A1 (en) | 2015-05-21 |
US9425327B2 (en) | 2016-08-23 |
JP2015099921A (ja) | 2015-05-28 |
DE102014116628A1 (de) | 2015-05-21 |
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