JP6931208B2 - 低応力低水素ｌｐｃｖｄシリコン窒化物 - Google Patents

低応力低水素ｌｐｃｖｄシリコン窒化物 Download PDF

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JP6931208B2
JP6931208B2 JP2017558375A JP2017558375A JP6931208B2 JP 6931208 B2 JP6931208 B2 JP 6931208B2 JP 2017558375 A JP2017558375 A JP 2017558375A JP 2017558375 A JP2017558375 A JP 2017558375A JP 6931208 B2 JP6931208 B2 JP 6931208B2
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nitride layer
silicon nitride
gate
gan fet
layer
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JP2018515926A5 (enExample
JP2018515926A (ja
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ステファン デラス ニコラス
ステファン デラス ニコラス
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テキサス インスツルメンツ インコーポレイテッド
テキサス インスツルメンツ インコーポレイテッド
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    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00642—Manufacture or treatment of devices or systems in or on a substrate for improving the physical properties of a device
    • B81C1/0065—Mechanical properties
    • B81C1/00666—Treatments for controlling internal stress or strain in MEMS structures
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    • B81B7/0009—Structural features, others than packages, for protecting a device against environmental influences
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    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H10D30/0227—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate having both lightly-doped source and drain extensions and source and drain regions self-aligned to the sides of the gate, e.g. lightly-doped drain [LDD] MOSFET or double-diffused drain [DDD] MOSFET
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    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
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    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
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    • H10D62/82—Heterojunctions
    • H10D62/824—Heterojunctions comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions
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    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
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    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6682—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
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    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/694—Inorganic materials composed of nitrides
    • H10P14/6943—Inorganic materials composed of nitrides containing silicon
    • H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
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    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/43—Encapsulations, e.g. protective coatings characterised by their materials comprising oxides, nitrides or carbides, e.g. ceramics or glasses
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    • B81—MICROSTRUCTURAL TECHNOLOGY
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    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
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    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0174—Manufacture or treatment of microstructural devices or systems in or on a substrate for making multi-layered devices, film deposition or growing
    • B81C2201/0176—Chemical vapour Deposition
    • B81C2201/0177—Epitaxy, i.e. homo-epitaxy, hetero-epitaxy, GaAs-epitaxy
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
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    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0174—Manufacture or treatment of microstructural devices or systems in or on a substrate for making multi-layered devices, film deposition or growing
    • B81C2201/0181—Physical Vapour Deposition [PVD], i.e. evaporation, sputtering, ion plating or plasma assisted deposition, ion cluster beam technology
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  • Health & Medical Sciences (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
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JP2017558375A 2015-05-07 2016-05-09 低応力低水素ｌｐｃｖｄシリコン窒化物 Active JP6931208B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/706,941 2015-05-07
US14/706,941 US9580304B2 (en) 2015-05-07 2015-05-07 Low-stress low-hydrogen LPCVD silicon nitride
PCT/US2016/031509 WO2016179596A1 (en) 2015-05-07 2016-05-09 Low-stress low-hydrogen lpcvd silicon nitride

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JP2018515926A JP2018515926A (ja) 2018-06-14
JP2018515926A5 JP2018515926A5 (enExample) 2019-06-13
JP6931208B2 true JP6931208B2 (ja) 2021-09-01

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WO (1) WO2016179596A1 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6834709B2 (ja) * 2017-04-03 2021-02-24 住友電気工業株式会社 窒化珪素パッシベーション膜の成膜方法及び半導体装置の製造方法
JP6984456B2 (ja) * 2018-02-05 2021-12-22 住友電気工業株式会社 電界効果トランジスタの製造方法
CN110120347B (zh) * 2018-02-05 2023-11-17 住友电气工业株式会社 形成场效应晶体管的方法
JP6997002B2 (ja) 2018-02-19 2022-01-17 住友電気工業株式会社 半導体装置及びその製造方法
CN110429024B (zh) * 2019-08-08 2022-04-15 京东方科技集团股份有限公司 层间绝缘层及薄膜晶体管的制备方法
CN113782420B (zh) * 2021-08-05 2024-07-19 华虹半导体(无锡)有限公司 晶圆加工方法
CN117488273A (zh) * 2023-11-21 2024-02-02 华东光电集成器件研究所 一种低粗糙度厚氮化硅薄膜的制备方法

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4538343A (en) * 1984-06-15 1985-09-03 Texas Instruments Incorporated Channel stop isolation technology utilizing two-step etching and selective oxidation with sidewall masking
JPH056890A (ja) * 1990-10-15 1993-01-14 Seiko Epson Corp パツシベーシヨン多層膜を備えた半導体装置及びその製造方法
JPH04299515A (ja) * 1991-03-27 1992-10-22 Shin Etsu Chem Co Ltd Ｘ線リソグラフィ−マスク用ｘ線透過膜およびその製造方法
US5754390A (en) * 1996-01-23 1998-05-19 Micron Technology, Inc. Integrated capacitor bottom electrode for use with conformal dielectric
US6316820B1 (en) * 1997-07-25 2001-11-13 Hughes Electronics Corporation Passivation layer and process for semiconductor devices
US7235856B1 (en) * 1997-12-18 2007-06-26 Micron Technology, Inc. Trench isolation for semiconductor devices
KR100635589B1 (ko) * 1998-09-24 2006-10-18 리플렉티버티 인코퍼레이티드 자기-제한 정밀기계소자를 가진 2중 기판 반사형의 공간 광 변조기 및 이의 제조방법
US7919791B2 (en) 2002-03-25 2011-04-05 Cree, Inc. Doped group III-V nitride materials, and microelectronic devices and device precursor structures comprising same
US7176522B2 (en) 2003-11-25 2007-02-13 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device having high drive current and method of manufacturing thereof
JP2005286135A (ja) * 2004-03-30 2005-10-13 Eudyna Devices Inc 半導体装置および半導体装置の製造方法
EP1801865A4 (en) * 2004-08-27 2009-11-04 Nat Inst Inf & Comm Tech FIELD EFFECT TRANSISTOR ON GAN BASE AND MANUFACTURING METHOD THEREFOR
TWI263265B (en) * 2005-02-13 2006-10-01 United Microelectronics Corp Method for fabricating ultra-high tensile-stressed film and strained-silicon transistors thereof
CN101238561B (zh) * 2005-06-10 2011-08-24 日本电气株式会社 场效应晶体管
US7855401B2 (en) * 2005-06-29 2010-12-21 Cree, Inc. Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides
JP2008034522A (ja) * 2006-07-27 2008-02-14 Oki Electric Ind Co Ltd 電界効果トランジスタ
US8063434B1 (en) * 2007-05-25 2011-11-22 Cypress Semiconductor Corporation Memory transistor with multiple charge storing layers and a high work function gate electrode
US8871595B2 (en) * 2007-05-25 2014-10-28 Cypress Semiconductor Corporation Integration of non-volatile charge trap memory devices and logic CMOS devices
WO2009011709A1 (en) * 2007-07-19 2009-01-22 The Board Of Trustees Of The University Of Illinois High resolution electrohydrodynamic jet printing for manufacturing systems
JP4719210B2 (ja) * 2007-12-28 2011-07-06 富士通株式会社 半導体装置及びその製造方法
JP5345328B2 (ja) * 2008-02-22 2013-11-20 住友電工デバイス・イノベーション株式会社 半導体装置の製造方法
WO2010079574A1 (ja) * 2009-01-09 2010-07-15 パナソニック株式会社 Ｍｅｍｓデバイス
JP5609055B2 (ja) * 2009-10-02 2014-10-22 富士通株式会社 化合物半導体装置及びその製造方法
US8816395B2 (en) 2010-05-02 2014-08-26 Visic Technologies Ltd. Field effect power transistors
US20120255932A1 (en) * 2010-07-15 2012-10-11 Massood Tabib-Azar Nanofabrication device and method for manufacture of a nanofabrication device
JP5685020B2 (ja) * 2010-07-23 2015-03-18 住友電気工業株式会社 半導体装置の製造方法
US8673757B2 (en) 2010-10-28 2014-03-18 International Business Machines Corporation Structure and method for using high-k material as an etch stop layer in dual stress layer process
CN102446840A (zh) * 2011-11-02 2012-05-09 上海华力微电子有限公司 一种增加双大马士革结构介质阻挡层薄膜击穿电压的方法
JP5970197B2 (ja) * 2012-02-08 2016-08-17 メルクパフォーマンスマテリアルズマニュファクチャリング合同会社 無機ポリシラザン樹脂
KR20130097116A (ko) * 2012-02-23 2013-09-02 이피션트 파워 컨버젼 코퍼레이션 게이트 스페이서를 포함하는 증가형 갈륨 나이트라이드 고전자이동 트랜지스터 소자 및 이를 제조하는 방법
US9111868B2 (en) * 2012-06-26 2015-08-18 Freescale Semiconductor, Inc. Semiconductor device with selectively etched surface passivation
JP2014029908A (ja) * 2012-07-31 2014-02-13 Toyota Central R&D Labs Inc 半導体装置および半導体装置の製造方法
US8941460B2 (en) * 2012-10-11 2015-01-27 The Board Of Trustees Of The University Of Illinois Rolled-up transformer structure for a radiofrequency integrated circuit (RFIC)
JP6339762B2 (ja) * 2013-01-17 2018-06-06 富士通株式会社 半導体装置及びその製造方法、電源装置、高周波増幅器
US9035318B2 (en) * 2013-05-03 2015-05-19 Texas Instruments Incorporated Avalanche energy handling capable III-nitride transistors

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US20170133472A1 (en) 2017-05-11
US20160325987A1 (en) 2016-11-10
US10026817B2 (en) 2018-07-17
CN107533974B (zh) 2022-03-18
JP2018515926A (ja) 2018-06-14
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