JP6863423B2 - 電子デバイス用基板およびその製造方法 - Google Patents

電子デバイス用基板およびその製造方法 Download PDF

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JP6863423B2
JP6863423B2 JP2019144251A JP2019144251A JP6863423B2 JP 6863423 B2 JP6863423 B2 JP 6863423B2 JP 2019144251 A JP2019144251 A JP 2019144251A JP 2019144251 A JP2019144251 A JP 2019144251A JP 6863423 B2 JP6863423 B2 JP 6863423B2
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Prior art keywords
substrate
wafer
silicon
bonded
electronic device
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JP2019144251A
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Japanese (ja)
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JP2021027186A (ja
JP2021027186A5 (https=
Inventor
和徳 萩本
和徳 萩本
正三郎 後藤
正三郎 後藤
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Shin Etsu Handotai Co Ltd
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Shin Etsu Handotai Co Ltd
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Priority to JP2019144251A priority Critical patent/JP6863423B2/ja
Priority to US17/628,390 priority patent/US20220367188A1/en
Priority to CN202080055655.2A priority patent/CN114207825A/zh
Priority to EP20849816.2A priority patent/EP4012750A4/en
Priority to PCT/JP2020/025934 priority patent/WO2021024654A1/ja
Publication of JP2021027186A publication Critical patent/JP2021027186A/ja
Publication of JP2021027186A5 publication Critical patent/JP2021027186A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H10P10/12—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/06—Joining of crystals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2907—Materials being Group IIIA-VA materials
    • H10P14/2908—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H10P90/1916—Preparing SOI wafers using bonding with separation or delamination along an ion implanted layer, e.g. Smart-cut
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • H10W42/121—Arrangements for protection of devices protecting against mechanical damage

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2019144251A 2019-08-06 2019-08-06 電子デバイス用基板およびその製造方法 Active JP6863423B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2019144251A JP6863423B2 (ja) 2019-08-06 2019-08-06 電子デバイス用基板およびその製造方法
US17/628,390 US20220367188A1 (en) 2019-08-06 2020-07-02 Substrate for an electronic device and method for producing the same
CN202080055655.2A CN114207825A (zh) 2019-08-06 2020-07-02 电子器件用基板及其制造方法
EP20849816.2A EP4012750A4 (en) 2019-08-06 2020-07-02 Substrate for electronic device and production method therefor
PCT/JP2020/025934 WO2021024654A1 (ja) 2019-08-06 2020-07-02 電子デバイス用基板およびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2019144251A JP6863423B2 (ja) 2019-08-06 2019-08-06 電子デバイス用基板およびその製造方法

Publications (3)

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JP2021027186A JP2021027186A (ja) 2021-02-22
JP2021027186A5 JP2021027186A5 (https=) 2021-04-01
JP6863423B2 true JP6863423B2 (ja) 2021-04-21

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JP2019144251A Active JP6863423B2 (ja) 2019-08-06 2019-08-06 電子デバイス用基板およびその製造方法

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US (1) US20220367188A1 (https=)
EP (1) EP4012750A4 (https=)
JP (1) JP6863423B2 (https=)
CN (1) CN114207825A (https=)
WO (1) WO2021024654A1 (https=)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7279552B2 (ja) * 2019-07-11 2023-05-23 信越半導体株式会社 電子デバイス用基板およびその製造方法
JP7692638B2 (ja) * 2021-04-16 2025-06-16 テクタス コーポレイション 窒化ガリウム発光ダイオード用のシリコン二重ウェーハ基板
JP7597081B2 (ja) * 2021-12-01 2024-12-10 信越半導体株式会社 電子デバイス用基板及びその製造方法
WO2023100577A1 (ja) 2021-12-01 2023-06-08 信越半導体株式会社 電子デバイス用基板及びその製造方法
JP7616088B2 (ja) * 2022-01-05 2025-01-17 信越半導体株式会社 窒化物半導体基板及びその製造方法
DE102022000425A1 (de) * 2022-02-03 2023-08-03 Azur Space Solar Power Gmbh III-N-Silizium Halbleiterscheibe
DE102022000424A1 (de) * 2022-02-03 2023-08-03 Azur Space Solar Power Gmbh Herstellungsverfahren für eine Halbleiterscheibe mit Silizium und mit einer III-N-Schicht
JP7694523B2 (ja) * 2022-04-13 2025-06-18 信越半導体株式会社 電子デバイス用基板及びその製造方法
US20250273587A1 (en) 2022-04-13 2025-08-28 Shin-Etsu Handotai Co., Ltd. Substrate for electronic device and method for producing the same
JP7563434B2 (ja) * 2022-05-27 2024-10-08 信越半導体株式会社 電子デバイス用基板及びその製造方法
WO2023228868A1 (ja) 2022-05-27 2023-11-30 信越半導体株式会社 電子デバイス用基板及びその製造方法

Family Cites Families (15)

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JPH0590117A (ja) * 1991-09-27 1993-04-09 Toshiba Corp 単結晶薄膜半導体装置
JPH09246505A (ja) * 1996-03-01 1997-09-19 Hitachi Ltd 半導体集積回路装置
JP5250968B2 (ja) * 2006-11-30 2013-07-31 株式会社Ｓｕｍｃｏ エピタキシャルシリコンウェーハ及びその製造方法並びにエピタキシャル成長用シリコンウェーハ。
US7902039B2 (en) * 2006-11-30 2011-03-08 Sumco Corporation Method for manufacturing silicon wafer
US7999288B2 (en) * 2007-11-26 2011-08-16 International Rectifier Corporation High voltage durability III-nitride semiconductor device
JP2009292669A (ja) * 2008-06-03 2009-12-17 Sumco Corp シリコンウェーハ
JP5665745B2 (ja) * 2009-08-04 2015-02-04 Ｄｏｗａエレクトロニクス株式会社 電子デバイス用エピタキシャル基板およびその製造方法
JP5636183B2 (ja) * 2009-11-11 2014-12-03 コバレントマテリアル株式会社 化合物半導体基板
JP2013239474A (ja) * 2012-05-11 2013-11-28 Sanken Electric Co Ltd エピタキシャル基板、半導体装置及び半導体装置の製造方法
JP2014192226A (ja) 2013-03-26 2014-10-06 Sharp Corp 電子デバイス用エピタキシャル基板
JP2014236093A (ja) * 2013-05-31 2014-12-15 サンケン電気株式会社 シリコン系基板、半導体装置、及び、半導体装置の製造方法
CN103681992A (zh) * 2014-01-07 2014-03-26 苏州晶湛半导体有限公司 半导体衬底、半导体器件及半导体衬底制造方法
JP2018041851A (ja) * 2016-09-08 2018-03-15 クアーズテック株式会社 窒化物半導体基板
US10943813B2 (en) * 2018-07-13 2021-03-09 Globalwafers Co., Ltd. Radio frequency silicon on insulator wafer platform with superior performance, stability, and manufacturability
JP7279552B2 (ja) * 2019-07-11 2023-05-23 信越半導体株式会社 電子デバイス用基板およびその製造方法

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Publication number Publication date
WO2021024654A1 (ja) 2021-02-11
CN114207825A (zh) 2022-03-18
EP4012750A4 (en) 2023-10-18
JP2021027186A (ja) 2021-02-22
EP4012750A1 (en) 2022-06-15
US20220367188A1 (en) 2022-11-17

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