JP2013239474A - エピタキシャル基板、半導体装置及び半導体装置の製造方法 - Google Patents
エピタキシャル基板、半導体装置及び半導体装置の製造方法 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims abstract description 157
- 239000004065 semiconductor Substances 0.000 title claims abstract description 118
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 129
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 129
- 239000010703 silicon Substances 0.000 claims abstract description 129
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 36
- 125000004430 oxygen atom Chemical group O* 0.000 claims abstract description 28
- 239000000463 material Substances 0.000 claims abstract description 19
- 150000004767 nitrides Chemical class 0.000 claims description 33
- 238000000034 method Methods 0.000 claims description 18
- 238000010438 heat treatment Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 145
- 229910052796 boron Inorganic materials 0.000 description 21
- 239000002346 layers by function Substances 0.000 description 19
- 238000005253 cladding Methods 0.000 description 15
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 14
- 229910002601 GaN Inorganic materials 0.000 description 12
- 230000035882 stress Effects 0.000 description 8
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 229910002704 AlGaN Inorganic materials 0.000 description 5
- 239000012159 carrier gas Substances 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000001556 precipitation Methods 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 230000010287 polarization Effects 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 3
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000005083 Zinc sulfide Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- 229910052984 zinc sulfide Inorganic materials 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 230000006355 external stress Effects 0.000 description 1
- 238000004868 gas analysis Methods 0.000 description 1
- MSNOMDLPLDYDME-UHFFFAOYSA-N gold nickel Chemical compound [Ni].[Au] MSNOMDLPLDYDME-UHFFFAOYSA-N 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
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Abstract
【解決手段】4×1017cm-3以上且つ6×1017cm-3以下の濃度で酸素原子を含有し、且つ、5×1018cm-3以上且つ6×1019cm-3以下の濃度でボロン原子を含有するシリコン基板と、シリコン基板上に配置された、シリコン基板と異なる熱膨張係数を有する材料からなる半導体層とを備える。
【選択図】図1
Description
上記のように、本発明は実施形態によって記載したが、この開示の一部をなす論述及び図面はこの発明を限定するものであると理解すべきではない。この開示から当業者には様々な代替実施形態、実施例及び運用技術が明らかとなろう。
10…シリコン基板
20…半導体層
21…バッファ層
22…機能層
31…ソース電極
32…ドレイン電極
33…ゲート電極
41…アノード電極
42…カソード電極
51…n側電極
52…p側電極
210…多層膜
211…第1の窒化物半導体層
212…第2の窒化物半導体層
213…第3の窒化物半導体層
221…キャリア走行層
222…キャリア供給層
223…二次元キャリアガス層
225…n型クラッド層
226…活性層
227…p型クラッド層
Claims (7)
- 4×1017cm-3以上且つ6×1017cm-3以下の濃度で酸素原子を含有し、且つ、5×1018cm-3以上且つ6×1019cm-3以下の濃度でボロン原子を含有するシリコン基板と、
前記シリコン基板上に配置された、前記シリコン基板と異なる熱膨張係数を有する材料からなる半導体層と
を備えることを特徴とするエピタキシャル基板。 - 前記半導体層が、窒化物半導体膜の積層体からなることを特徴とする請求項1に記載のエピタキシャル基板。
- 4×1017cm-3以上且つ6×1017cm-3以下の濃度で酸素原子を含有し、且つ、5×1018cm-3以上且つ6×1019cm-3以下の濃度でボロン原子を含有するシリコン基板と、
前記シリコン基板上に配置された、前記シリコン基板と異なる熱膨張係数を有する材料からなる半導体層と、
前記半導体層と電気的に接続された電極と
を備えることを特徴とする半導体装置。 - 前記半導体層が、窒化物半導体膜の積層体からなることを特徴とする請求項3に記載の半導体装置。
- 4×1017cm-3以上且つ6×1017cm-3以下の濃度で酸素原子を含有し、且つ、5×1018cm-3以上且つ6×1019cm-3以下の濃度でボロン原子を含有するシリコン基板を準備するステップと、
前記シリコン基板を加熱しながら、エピタキシャル成長法によって前記シリコン基板上に前記シリコン基板とは異なる熱膨張係数を有する材料からなる半導体層を形成するステップと、
前記半導体層と電気的に接続するように電極を形成するステップと
を含むことを特徴とする半導体装置の製造方法。 - 前記半導体層として窒化物半導体膜の積層体を形成することを特徴とする請求項5に記載の半導体装置の製造方法。
- 前記半導体層を形成するステップにおいて、前記シリコン基板を900℃以上に加熱することを特徴とする請求項5又は6に記載の半導体装置の製造方法。
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JP2012109637A JP2013239474A (ja) | 2012-05-11 | 2012-05-11 | エピタキシャル基板、半導体装置及び半導体装置の製造方法 |
US14/397,779 US20150084163A1 (en) | 2012-05-11 | 2013-04-19 | Epitaxial substrate, semiconductor device, and method for manufacturing semiconductor device |
DE201311002033 DE112013002033T5 (de) | 2012-05-11 | 2013-04-19 | Epitaxialsubstrat, Halbleitervorrichtung, und Verfahren zum Herstellen einer Halbleitervorrichtung |
CN201380024651.8A CN104303268A (zh) | 2012-05-11 | 2013-04-19 | 外延基板、半导体装置及半导体装置的制造方法 |
KR1020147031210A KR20150009965A (ko) | 2012-05-11 | 2013-04-19 | 에피택셜 기판, 반도체 장치 및 반도체 장치의 제조방법 |
PCT/JP2013/002646 WO2013168371A1 (ja) | 2012-05-11 | 2013-04-19 | エピタキシャル基板、半導体装置及び半導体装置の製造方法 |
TW102115614A TW201401338A (zh) | 2012-05-11 | 2013-05-01 | 磊晶基板、半導體裝置及半導體裝置的製造方法 |
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Cited By (3)
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KR20160024524A (ko) * | 2014-08-26 | 2016-03-07 | 엘지이노텍 주식회사 | 반도체 소자 |
WO2016059923A1 (ja) * | 2014-10-14 | 2016-04-21 | シャープ株式会社 | 窒化物半導体およびそれを用いた電子デバイス |
WO2016174947A1 (ja) * | 2015-04-28 | 2016-11-03 | カーリットホールディングス株式会社 | シリコン材料からなる光学部材及びそれを有する光学機器 |
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JP6311480B2 (ja) * | 2014-06-24 | 2018-04-18 | 富士通株式会社 | 化合物半導体装置及びその製造方法 |
US9704705B2 (en) * | 2015-09-08 | 2017-07-11 | Macom Technology Solutions Holdings, Inc. | Parasitic channel mitigation via reaction with active species |
TWI589023B (zh) * | 2016-06-27 | 2017-06-21 | 國立暨南國際大學 | 半導體裝置用基材及使用其之半導體裝置 |
JP6863423B2 (ja) * | 2019-08-06 | 2021-04-21 | 信越半導体株式会社 | 電子デバイス用基板およびその製造方法 |
Citations (8)
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KR20120032329A (ko) * | 2010-09-28 | 2012-04-05 | 삼성전자주식회사 | 반도체 소자 |
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Cited By (7)
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KR20160024524A (ko) * | 2014-08-26 | 2016-03-07 | 엘지이노텍 주식회사 | 반도체 소자 |
KR102256628B1 (ko) * | 2014-08-26 | 2021-05-26 | 엘지이노텍 주식회사 | 반도체 소자 |
WO2016059923A1 (ja) * | 2014-10-14 | 2016-04-21 | シャープ株式会社 | 窒化物半導体およびそれを用いた電子デバイス |
WO2016174947A1 (ja) * | 2015-04-28 | 2016-11-03 | カーリットホールディングス株式会社 | シリコン材料からなる光学部材及びそれを有する光学機器 |
CN107533152A (zh) * | 2015-04-28 | 2018-01-02 | 佳里多控股公司 | 由硅材料构成的光学器件以及具有该光学器件的光学机器 |
JPWO2016174947A1 (ja) * | 2015-04-28 | 2018-02-15 | カーリットホールディングス株式会社 | シリコン材料からなる光学部材及びそれを有する光学機器 |
US20180149771A1 (en) * | 2015-04-28 | 2018-05-31 | Carlit Holdings Co., Ltd. | Optical member formed from silicon material and optical device comprising same |
Also Published As
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TW201401338A (zh) | 2014-01-01 |
US20150084163A1 (en) | 2015-03-26 |
KR20150009965A (ko) | 2015-01-27 |
WO2013168371A1 (ja) | 2013-11-14 |
CN104303268A (zh) | 2015-01-21 |
DE112013002033T5 (de) | 2015-04-16 |
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