JP6700655B2 - 光電変換装置および光電変換装置の製造方法 - Google Patents

光電変換装置および光電変換装置の製造方法 Download PDF

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JP6700655B2
JP6700655B2 JP2014222044A JP2014222044A JP6700655B2 JP 6700655 B2 JP6700655 B2 JP 6700655B2 JP 2014222044 A JP2014222044 A JP 2014222044A JP 2014222044 A JP2014222044 A JP 2014222044A JP 6700655 B2 JP6700655 B2 JP 6700655B2
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Prior art keywords
gate electrode
photoelectric conversion
conversion device
region
mos transistor
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Japanese (ja)
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JP2016092081A5 (enExample
JP2016092081A (ja
Inventor
下津佐　峰生
峰生 下津佐
政次 板橋
政次 板橋
裕介 大貫
裕介 大貫
柿沼　伸明
伸明 柿沼
藤田　雅人
雅人 藤田
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Canon Inc
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Canon Inc
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Priority to JP2014222044A priority Critical patent/JP6700655B2/ja
Priority to US14/925,921 priority patent/US9865637B2/en
Publication of JP2016092081A publication Critical patent/JP2016092081A/ja
Priority to US15/828,231 priority patent/US10263029B2/en
Publication of JP2016092081A5 publication Critical patent/JP2016092081A5/ja
Priority to US16/286,284 priority patent/US10937822B2/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H10F39/80373—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor characterised by the gate of the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels

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  • Solid State Image Pick-Up Elements (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2014222044A 2014-10-30 2014-10-30 光電変換装置および光電変換装置の製造方法 Active JP6700655B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2014222044A JP6700655B2 (ja) 2014-10-30 2014-10-30 光電変換装置および光電変換装置の製造方法
US14/925,921 US9865637B2 (en) 2014-10-30 2015-10-28 Photoelectric conversion device and manufacturing method of the photoelectric conversion device
US15/828,231 US10263029B2 (en) 2014-10-30 2017-11-30 Photoelectric conversion device and manufacturing method of the photoelectric conversion device
US16/286,284 US10937822B2 (en) 2014-10-30 2019-02-26 Photoelectric conversion device and manufacturing method of the photoelectric conversion device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014222044A JP6700655B2 (ja) 2014-10-30 2014-10-30 光電変換装置および光電変換装置の製造方法

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JP2016092081A JP2016092081A (ja) 2016-05-23
JP2016092081A5 JP2016092081A5 (enExample) 2017-12-07
JP6700655B2 true JP6700655B2 (ja) 2020-05-27

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US (3) US9865637B2 (enExample)
JP (1) JP6700655B2 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6700655B2 (ja) * 2014-10-30 2020-05-27 キヤノン株式会社 光電変換装置および光電変換装置の製造方法
JP2018046089A (ja) * 2016-09-13 2018-03-22 セイコーエプソン株式会社 固体撮像装置及びその製造方法、並びに、電子機器

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3809733B2 (ja) * 1998-02-25 2006-08-16 セイコーエプソン株式会社 薄膜トランジスタの剥離方法
US7335958B2 (en) * 2003-06-25 2008-02-26 Micron Technology, Inc. Tailoring gate work-function in image sensors
KR100674908B1 (ko) * 2004-06-01 2007-01-26 삼성전자주식회사 필 팩터가 개선된 ｃｍｏｓ 이미지 소자
JP5110820B2 (ja) * 2006-08-02 2012-12-26 キヤノン株式会社 光電変換装置、光電変換装置の製造方法及び撮像システム
JP5305622B2 (ja) 2006-08-31 2013-10-02 キヤノン株式会社 光電変換装置の製造方法
JP4137161B1 (ja) * 2007-02-23 2008-08-20 キヤノン株式会社 光電変換装置の製造方法
JP5493382B2 (ja) * 2008-08-01 2014-05-14 ソニー株式会社 固体撮像装置、その製造方法および撮像装置
JP5407282B2 (ja) * 2008-11-07 2014-02-05 ソニー株式会社 固体撮像装置とその製造方法、及び電子機器
JP2010161236A (ja) 2009-01-08 2010-07-22 Canon Inc 光電変換装置の製造方法
JP4835710B2 (ja) * 2009-03-17 2011-12-14 ソニー株式会社 固体撮像装置、固体撮像装置の製造方法、固体撮像装置の駆動方法、及び電子機器
JP5890863B2 (ja) 2009-06-26 2016-03-22 キヤノン株式会社 光電変換装置の製造方法
JP5558916B2 (ja) * 2009-06-26 2014-07-23 キヤノン株式会社 光電変換装置の製造方法
JP2011077072A (ja) * 2009-09-29 2011-04-14 Panasonic Corp 固体撮像素子及びその製造方法
JP2011204916A (ja) * 2010-03-25 2011-10-13 Toshiba Corp 固体撮像装置およびその製造方法
WO2012176390A1 (ja) * 2011-06-23 2012-12-27 パナソニック株式会社 固体撮像装置
JP5823780B2 (ja) * 2011-08-31 2015-11-25 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP5930650B2 (ja) * 2011-10-07 2016-06-08 キヤノン株式会社 半導体装置の製造方法
JP5875368B2 (ja) * 2011-12-28 2016-03-02 キヤノン株式会社 半導体装置の製造方法
JP5963449B2 (ja) * 2012-01-16 2016-08-03 キヤノン株式会社 光電変換装置の製造方法
WO2014002361A1 (ja) * 2012-06-26 2014-01-03 パナソニック株式会社 固体撮像装置及びその製造方法
JPWO2014002353A1 (ja) * 2012-06-27 2016-05-30 パナソニックＩｐマネジメント株式会社 固体撮像素子及びその製造方法
JP2014045088A (ja) * 2012-08-27 2014-03-13 Canon Inc 半導体装置の製造方法
JP6700655B2 (ja) * 2014-10-30 2020-05-27 キヤノン株式会社 光電変換装置および光電変換装置の製造方法
JP2017098809A (ja) * 2015-11-26 2017-06-01 キヤノン株式会社 光電変換装置、および、撮像システム
JP2017175108A (ja) * 2016-03-17 2017-09-28 パナソニックＩｐマネジメント株式会社 光センサおよび撮像装置

Also Published As

Publication number Publication date
US20160126278A1 (en) 2016-05-05
US10937822B2 (en) 2021-03-02
US9865637B2 (en) 2018-01-09
JP2016092081A (ja) 2016-05-23
US20180090527A1 (en) 2018-03-29
US10263029B2 (en) 2019-04-16
US20190198537A1 (en) 2019-06-27

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