JP2007110134A - Cmosイメージセンサとその製造方法 - Google Patents
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- 229910052751 metal Inorganic materials 0.000 claims abstract description 61
- 239000002184 metal Substances 0.000 claims abstract description 61
- 239000000758 substrate Substances 0.000 claims abstract description 45
- 239000004065 semiconductor Substances 0.000 claims abstract description 43
- 238000000034 method Methods 0.000 claims abstract description 29
- 229910021332 silicide Inorganic materials 0.000 claims abstract description 17
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 17
- 238000002955 isolation Methods 0.000 claims description 34
- 230000008569 process Effects 0.000 claims description 19
- 230000004888 barrier function Effects 0.000 claims description 10
- 238000000137 annealing Methods 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 2
- 238000013461 design Methods 0.000 abstract description 4
- 238000000926 separation method Methods 0.000 abstract 4
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 9
- 238000010586 diagram Methods 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 239000012535 impurity Substances 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76895—Local interconnects; Local pads, as exemplified by patent document EP0896365
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14687—Wafer level processing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
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- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
【解決手段】本発明は、アクティブ領域と素子隔離領域とで区画された半導体基板の素子隔離領域に形成された素子隔離膜と、素子隔離膜の一部とアクティブ領域を横切って形成されるゲート電極と、半導体基板のアクティブ領域のうち一部に形成されるフォトダイオード領域と、ゲート電極の両側面に形成される絶縁膜側壁と、ゲート電極の上部表面とゲート電極に隣接するフォトダイオード領域の表面の一部に形成される金属シリサイド膜と、ゲート電極とフォトダイオード領域とを電気的に連結する金属膜と、金属膜と金属シリサイド膜を含む半導体基板の全面に形成される誘電膜とを備えていることを特徴とする。
【選択図】図4
Description
図3に示すように、アクティブ領域と素子隔離領域とに区画されたp型半導体基板41の素子隔離領域に形成された素子隔離膜42と、素子隔離膜42の一部とアクティブ領域を横切って形成されるソースフォロワートランジスタのゲート電極43と、半導体基板41のアクティブ領域のうち一部に形成されるフォトダイオード領域PD44と、ゲート電極43を含む半導体基板41の全面に形成される誘電膜45と、誘電膜45を貫通してゲート電極43とフォトダイオード領域44とを電気的に連結する金属配線46とを備えている。
そして、ゲートポテンシャルが全体トランジスタの性能に大きな影響を及ぼす。
すなわち、フォトダイオードとゲート電極とを連結する際、他の接触媒体無しに、シリサイド用金属膜などを用いて直接連結することによって、工程を簡素化させることができると同時に、その構造を単純化させることができ、これにより、ピクセルデザインマージンを向上させて、ピクセルスケールダウンを図ることができる。
図4は、図2のIV−IV’線における本発明に係るCMOSイメージセンサの断面図である。
すなわち、本発明は、各種トランジスタを完了した後、サリサイド工程を進める際、サリサイド用金属膜を用いてトランジスタのゲート電極とフォトダイオードを電気的に連結することによって、フォトダイオードのダメージを防止している。
まず、半導体基板上にパッド酸化膜、パッド窒化膜、TEOS(Tetra Ethyl Ortho Silicate)酸化膜を順に形成し、TEOS酸化膜上に感光膜を形成する。
バリア金属膜108は、200〜2000Åの厚さで形成する。
次に、半導体基板101の全面に誘電膜111を形成する。
Claims (8)
- 1つのフォトダイオードと複数のトランジスタとよりなるCMOSイメージセンサにおいて、
アクティブ領域と素子隔離領域とに区画された半導体基板の素子隔離領域に形成された素子隔離膜と、
前記素子隔離膜の一部と前記アクティブ領域を横切って形成されるソースフォロワートランジスタのゲート電極と、
前記半導体基板のアクティブ領域の一部に形成されるフォトダイオード領域と、
前記ゲート電極の両側面に形成される絶縁膜側壁と、
前記ゲート電極の上部表面と前記ゲート電極に隣接するフォトダイオード領域の表面の一部に形成される金属シリサイド膜と、
前記ゲート電極とフォトダイオード領域とを電気的に連結する金属膜と、
前記金属膜と金属シリサイド膜を含む半導体基板の全面に形成される誘電膜と
を備えることを特徴とするCMOSイメージセンサ。 - 前記金属膜と金属シリサイド膜上に形成されるバリア金属膜をさらに備えることを特徴とする請求項1に記載のCMOSイメージセンサ。
- 前記金属膜は、Ti、Ta、Ni、Coのうちいずれか1つよりなることを特徴とする請求項1に記載のCMOSイメージセンサ。
- 前記バリア金属膜は、200〜2000Åの厚さで形成されることを特徴とする請求項2に記載のCMOSイメージセンサ。
- 1つのフォトダイオードと複数のトランジスタとよりなるCMOSイメージセンサの製造方法において、
アクティブ領域と素子分離領域とで区画された半導体基板の素子分離領域に素子分離膜を形成するステップと、
前記素子隔離膜上の一部とアクティブ領域にゲート絶縁膜を介在させてソースフォロワートランジスタのゲート電極を形成するステップと、
前記半導体基板のアクティブ領域の所定領域にフォトダイオード領域を形成するステップと、
前記ゲート電極の両側面に形成される絶縁膜側壁と、
前記ゲート電極を含む半導体基板の全面に金属膜を堆積するステップと、
前記半導体基板にアニーリング工程を施し、前記ゲート電極及びフォトダイオード領域と前記金属膜との界面に金属シリサイド膜を形成するステップと、
前記ゲート電極とフォトダイオード領域とを電気的に連結するための前記金属膜を除いた他の部分の金属膜を選択的に除去するステップと、
前記金属膜と金属シリサイド膜を含む半導体基板の全面に誘電膜を形成するステップとを備えることを特徴とするCMOSイメージセンサの製造方法。 - 前記金属膜上にバリア金属膜を積層して形成するステップをさらに備えることを特徴とする請求項5に記載のCMOSイメージセンサの製造方法。
- 前記金属膜は、Ti、Ta、Ni、Coのうちいずれか1つを使用することを特徴とする請求項5に記載のCMOSイメージセンサの製造方法。
- 前記バリア金属膜は、TiNまたはTaNなどを200〜2000Åの厚さで形成することを特徴とする請求項6に記載のCMOSイメージセンサの製造方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050096365A KR100698104B1 (ko) | 2005-10-13 | 2005-10-13 | 씨모스 이미지 센서 및 그 제조 방법 |
Publications (2)
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JP2007110134A true JP2007110134A (ja) | 2007-04-26 |
JP4490407B2 JP4490407B2 (ja) | 2010-06-23 |
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JP2006279729A Expired - Fee Related JP4490407B2 (ja) | 2005-10-13 | 2006-10-13 | Cmosイメージセンサとその製造方法 |
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Country | Link |
---|---|
US (1) | US7651903B2 (ja) |
JP (1) | JP4490407B2 (ja) |
KR (1) | KR100698104B1 (ja) |
CN (1) | CN100547804C (ja) |
DE (1) | DE102006048611B4 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20190108372A (ko) * | 2018-03-14 | 2019-09-24 | (주) 픽셀플러스 | 이미지 센서용 픽셀, 포토 다이오드 및 이미지 센서의 구동 방법 |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100744807B1 (ko) * | 2005-07-25 | 2007-08-01 | 매그나칩 반도체 유한회사 | Cmos 이미지센서 및 그 제조방법 |
KR100720504B1 (ko) * | 2005-09-28 | 2007-05-22 | 동부일렉트로닉스 주식회사 | 씨모스 이미지 센서의 제조방법 |
FR2907259A1 (fr) * | 2006-10-13 | 2008-04-18 | St Microelectronics Sa | Realisation d'une barriere metallique dans un circuit electronique integre |
JP4525671B2 (ja) * | 2006-12-08 | 2010-08-18 | ソニー株式会社 | 固体撮像装置 |
KR100851756B1 (ko) * | 2007-06-08 | 2008-08-11 | 주식회사 동부하이텍 | 이미지 센서 및 그 제조방법 |
JP5444694B2 (ja) * | 2008-11-12 | 2014-03-19 | ソニー株式会社 | 固体撮像装置、その製造方法および撮像装置 |
US8637800B2 (en) * | 2011-04-19 | 2014-01-28 | Altasens, Inc. | Image sensor with hybrid heterostructure |
TWI618232B (zh) | 2013-09-09 | 2018-03-11 | 應用材料股份有限公司 | 工程誘發的可調靜電效應 |
CN111370430B (zh) * | 2018-12-26 | 2023-07-11 | 联华电子股份有限公司 | 集成电路装置及形成集成电路的方法 |
CN111463225B (zh) * | 2020-04-22 | 2023-06-20 | 上海微阱电子科技有限公司 | 全局快门图像传感器单元及其制备方法 |
Family Cites Families (9)
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JP2727584B2 (ja) | 1988-09-20 | 1998-03-11 | ソニー株式会社 | 固体撮像装置 |
US5202287A (en) * | 1989-01-06 | 1993-04-13 | International Business Machines Corporation | Method for a two step selective deposition of refractory metals utilizing SiH4 reduction and H2 reduction |
KR19980085117A (ko) * | 1997-05-28 | 1998-12-05 | 윤종용 | 저전력 씨모스(cmos) 소자 제조방법 |
US6872612B2 (en) * | 2001-06-27 | 2005-03-29 | Lsi Logic Corporation | Local interconnect for integrated circuit |
US6642076B1 (en) * | 2002-10-22 | 2003-11-04 | Taiwan Semiconductor Manufacturing Company | Asymmetrical reset transistor with double-diffused source for CMOS image sensor |
KR101028137B1 (ko) * | 2003-04-30 | 2011-04-08 | 크로스텍 캐피탈, 엘엘씨 | 씨모스 이미지 센서의 단위화소 |
KR20050011963A (ko) * | 2003-07-24 | 2005-01-31 | 매그나칩 반도체 유한회사 | 시모스 이미지센서의 실리사이드막 형성방법 |
KR100561971B1 (ko) * | 2003-09-24 | 2006-03-22 | 동부아남반도체 주식회사 | 씨모스 이미지 센서의 제조방법 |
US7345330B2 (en) * | 2004-12-09 | 2008-03-18 | Omnivision Technologies, Inc. | Local interconnect structure and method for a CMOS image sensor |
-
2005
- 2005-10-13 KR KR1020050096365A patent/KR100698104B1/ko not_active IP Right Cessation
-
2006
- 2006-10-12 US US11/580,388 patent/US7651903B2/en not_active Expired - Fee Related
- 2006-10-13 JP JP2006279729A patent/JP4490407B2/ja not_active Expired - Fee Related
- 2006-10-13 CN CNB2006101635981A patent/CN100547804C/zh not_active Expired - Fee Related
- 2006-10-13 DE DE102006048611A patent/DE102006048611B4/de not_active Expired - Fee Related
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20190108372A (ko) * | 2018-03-14 | 2019-09-24 | (주) 픽셀플러스 | 이미지 센서용 픽셀, 포토 다이오드 및 이미지 센서의 구동 방법 |
KR102088732B1 (ko) * | 2018-03-14 | 2020-04-23 | (주) 픽셀플러스 | 이미지 센서용 픽셀, 포토 다이오드 및 이미지 센서의 구동 방법 |
Also Published As
Publication number | Publication date |
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KR100698104B1 (ko) | 2007-03-23 |
CN1953195A (zh) | 2007-04-25 |
DE102006048611A1 (de) | 2007-04-26 |
CN100547804C (zh) | 2009-10-07 |
US7651903B2 (en) | 2010-01-26 |
JP4490407B2 (ja) | 2010-06-23 |
US20070085119A1 (en) | 2007-04-19 |
DE102006048611B4 (de) | 2011-04-28 |
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