JP6683972B2 - 半導体装置とその製造方法および半導体積層物 - Google Patents
半導体装置とその製造方法および半導体積層物 Download PDFInfo
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- JP6683972B2 JP6683972B2 JP2016166155A JP2016166155A JP6683972B2 JP 6683972 B2 JP6683972 B2 JP 6683972B2 JP 2016166155 A JP2016166155 A JP 2016166155A JP 2016166155 A JP2016166155 A JP 2016166155A JP 6683972 B2 JP6683972 B2 JP 6683972B2
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- 239000004065 semiconductor Substances 0.000 title claims description 371
- 238000004519 manufacturing process Methods 0.000 title claims description 26
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 224
- 229910002601 GaN Inorganic materials 0.000 claims description 213
- 239000012535 impurity Substances 0.000 claims description 55
- 238000001039 wet etching Methods 0.000 claims description 12
- 230000004888 barrier function Effects 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 10
- 238000002048 anodisation reaction Methods 0.000 claims description 5
- 239000010410 layer Substances 0.000 description 418
- 230000015556 catabolic process Effects 0.000 description 19
- 239000011777 magnesium Substances 0.000 description 19
- 230000001681 protective effect Effects 0.000 description 13
- 230000000052 comparative effect Effects 0.000 description 8
- 230000007547 defect Effects 0.000 description 8
- 239000007772 electrode material Substances 0.000 description 8
- 238000000059 patterning Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 239000008151 electrolyte solution Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- GTKRFUAGOKINCA-UHFFFAOYSA-M chlorosilver;silver Chemical compound [Ag].[Ag]Cl GTKRFUAGOKINCA-UHFFFAOYSA-M 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- QBJCZLXULXFYCK-UHFFFAOYSA-N magnesium;cyclopenta-1,3-diene Chemical compound [Mg+2].C1C=CC=[C-]1.C1C=CC=[C-]1 QBJCZLXULXFYCK-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
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Description
窒化ガリウム系半導体で形成され、n型の導電型を有する第1半導体層と、
前記第1半導体層の直上に積層され、p型不純物が1×1020cm−3以上の濃度で添加された窒化ガリウム系半導体で形成され、p型の導電型を有する第2半導体層と、
前記第1半導体層と接触するように配置された第1電極と、
前記第2半導体層と接触するように配置された第2電極と、
を有し、pn接合ダイオードとして機能する半導体装置
が提供される。
窒化ガリウム系半導体で形成され、n型の導電型を有する第1半導体層と、前記第1半導体層の直上に積層され、p型不純物が1×1020cm−3以上の濃度で添加された窒化ガリウム系半導体で形成され、p型の導電型を有する第2半導体層と、を有する半導体積層物を準備する工程と、
前記第1半導体層と接触するように配置された第1電極を形成する工程と、
前記第2半導体層と接触するように配置された第2電極を形成する工程と、
を有し、pn接合ダイオードとして機能する半導体装置を製造する、半導体装置の製造方法
が提供される。
窒化ガリウム系半導体で形成され、n型の導電型を有する第1半導体層と、
前記第1半導体層の直上に積層され、p型不純物が1×1020cm−3以上の濃度で添加された窒化ガリウム系半導体で形成され、p型の導電型を有する第2半導体層と、
を有し、pn接合ダイオードとして機能させることができる半導体積層物
が提供される。
III族元素を含有するGaN系半導体の、GaNに対する格子不整合が、1%以下となるように含有されることが好ましい。GaN系半導体中に許容される含有量は、例えばAlGaN中のAlについてはIII族元素の内40原子%以下であり、また例えばInGaN中のInについてはIII族元素の内10原子%以下である。なお、InAlGaNは、InAlN中のInがIII族元素の内10原子%以上30原子%以下となるInAlNと、GaNとを任意の組成で組合せたInAlGaNであっても良い。なお、AlおよびIn組成が上記の範囲内にあると、GaNとの格子歪が大きくなりにくいためクラックが入りにくくなる。
GaN層12上に、n型GaN層13を成長させて、n型半導体層10を形成する。さらに、n型半導体層10上に、つまりn型GaN層13上に、p型GaN層21を成長させて、p型半導体層20を形成する。各層に添加される不純物の濃度や、各層の厚さ等は、例えば上述の通りである。
いることができる。
40が、p型半導体層20と接触するとともに、n型半導体層10と接触するように配置された構造が構成されている。なお、p側上部電極42の構造は、第1実施形態と同様である。
よる半導体装置100の製造工程を示す概略断面図である。
窒化ガリウム系半導体で形成され、n型の導電型を有する第1半導体層と、
前記第1半導体層の直上に積層され、p型不純物が1×1020cm−3以上の濃度(1×1020cm−3超の濃度)で添加された窒化ガリウム系半導体で形成され、p型の導電型を有する第2半導体層と、
前記第1半導体層と接触するように配置された第1電極と、
前記第2半導体層と接触するように配置された第2電極と、
を有し、pn接合ダイオードとして機能する半導体装置。
前記第2半導体層に添加された前記p型不純物の濃度は、より好ましくは2×1020cm−3超の濃度である付記1に記載の半導体装置。
前記第2半導体層に添加された前記p型不純物の濃度は、好ましくは1×1021cm−3未満の濃度であり、より好ましくは6×1020cm−3以下の濃度であり、さらに
好ましくは3×1020cm−3以下の濃度である付記1または2に記載の半導体装置。
前記第2半導体層の厚さは、好ましくは100nm未満の厚さであり、より好ましくは30nm以下の厚さである付記1〜3のいずれか1つに記載の半導体装置。
前記第2半導体層の厚さは、好ましくは2nm以上の厚さであり、より好ましくは10nm以上の厚さである付記1〜4のいずれか1つに記載の半導体装置。
前記第1半導体層にn型不純物が添加されており、
前記第1半導体層の、前記第2半導体層とpn接合を形成する部分に添加された前記n型不純物の濃度に対する、前記第2半導体層に添加された前記p型不純物の濃度の比率は、10000倍以上である付記1〜5のいずれか1つに記載の半導体装置。
前記第2半導体層における正孔濃度は、1×1016cm−3以上の濃度である付記1〜6のいずれか1つに記載の半導体装置。
逆方向電圧の印加時に400V以上の耐圧を示す付記1〜7のいずれか1つに記載の半導体装置。
前記第1半導体層の上面よりも、前記第2半導体層の上面の方が、高い位置に配置されている(前記第1半導体層の上面と前記第2半導体層の上面との高さが異なっている)付記1〜8のいずれか1つに記載の半導体装置。
前記第2電極は、前記第2半導体層とは接触し、前記第1半導体層とは接触しないように配置されている付記1〜9のいずれか1つに記載の半導体装置。
前記第2電極は、前記第2半導体層と接触するとともに、前記第1半導体層と接触するように配置されており、
pn接合ダイオードとして機能するとともにショットキーバリアダイオードとして機能するジャンクションバリアショットキーダイオードである付記1〜9のいずれか1つに記載の半導体装置。
平面視上、前記第2電極が前記第2半導体層に接触する面積と前記第2電極が前記第1半導体層に接触する面積との和に対する、前記第2電極が前記第2半導体層に接触する面積の比率は、20%以上である付記11に記載の半導体装置。
平面視上、前記第2電極が前記第2半導体層に接触する面積と前記第2電極が前記第1半導体層に接触する面積との和に対する、前記第2電極が前記第2半導体層に接触する面積の比率は、80%以下である付記11または12に記載の半導体装置。
前記第1半導体層の上面における前記第2半導体層に覆われている部分の欠陥密度に対する、前記第1半導体層の上面における前記第2電極と接触している部分の欠陥密度の増加分は、10%以下である付記11〜13のいずれか1つに記載の半導体装置。
前記第2電極が接触する前記第2半導体層の上面よりも、前記第2電極が接触する前記第1半導体層の上面の方が、低い位置に配置されている(前記第2電極が接触する前記第2半導体層の上面と前記第2電極が接触する前記第1半導体層の上面との高さが異なっている)付記11〜14のいずれか1つに記載の半導体装置。
窒化ガリウム系半導体で形成され、n型の導電型を有する第1半導体層と、前記第1半導体層の直上に積層され、p型不純物が1×1020cm−3以上の濃度(1×1020cm−3超の濃度)で添加された窒化ガリウム系半導体で形成され、p型の導電型を有する第2半導体層と、を有する半導体積層物を準備する工程と、
前記第1半導体層と接触するように配置された第1電極を形成する工程と、
前記第2半導体層と接触するように配置された第2電極を形成する工程と、
を有し、pn接合ダイオードとして機能する半導体装置を製造する、半導体装置の製造方法。
前記第2半導体層を部分的にウェットエッチングにより全厚さ除去して、前記第1半導体層を露出させる工程をさらに有し、
前記第2電極を形成する工程は、前記第2半導体層上から前記ウェットエッチングで露出した前記第1半導体層上に延在する形状となるように前記第2電極を形成することで、前記第2半導体層と接触するとともに前記第1半導体層と接触するように配置された前記第2電極を形成し、
pn接合ダイオードとして機能するとともにショットキーバリアダイオードとして機能するジャンクションバリアショットキーダイオードを製造する、付記16に記載の半導体装置の製造方法。
前記ウェットエッチングとして陽極酸化が用いられる付記17に記載の半導体装置の製造方法。
窒化ガリウム系半導体で形成され、n型の導電型を有する第1半導体層と、
前記第1半導体層の直上に積層され、p型不純物が1×1020cm−3以上の濃度(1×1020cm−3超の濃度)で添加された窒化ガリウム系半導体で形成され、p型の導電型を有する第2半導体層と、
を有し、pn接合ダイオードとして機能させることができる半導体積層物。
前記第2半導体層の上面は、電極の接触領域として用意されている付記19に記載の半導体積層物。
前記半導体積層物の上面を前記第2半導体層の上面が構成する態様で、市場に流通される付記19または20に記載の半導体積層物。
11、12、13 n型GaN層
20 p型半導体層
21 p型GaN層
30 n側電極
40 p側電極
41 p側下部電極
42 p側上部電極
50 保護膜
100 半導体装置
110 半導体積層物
121 円環部
Claims (12)
- 窒化ガリウム系半導体で形成され、n型の導電型を有する第1半導体層と、
前記第1半導体層の直上に積層され、p型不純物が1×1020cm−3以上の濃度で添加された窒化ガリウム系半導体で形成され、p型の導電型を有し、100nm未満の厚さである第2半導体層と、
前記第1半導体層と接触するように配置された第1電極と、
前記第2半導体層と接触するように配置された第2電極と、
を有し、pn接合ダイオードとして機能する半導体装置。 - 前記第2半導体層における正孔濃度は、1×1016cm−3以上の濃度である請求項1に記載の半導体装置。
- 逆方向電圧の印加時に400V以上の耐圧を示す請求項1または2に記載の半導体装置。
- 前記第2電極は、前記第2半導体層とは接触し、前記第1半導体層とは接触しないように配置されている請求項1〜3のいずれか1項に記載の半導体装置。
- 前記第2電極は、前記第2半導体層と接触するとともに、前記第1半導体層と接触するように配置されており、
pn接合ダイオードとして機能するとともにショットキーバリアダイオードとして機能するジャンクションバリアショットキーダイオードである請求項1〜3のいずれか1項に記載の半導体装置。 - 平面視上、前記第2電極が前記第2半導体層に接触する面積と前記第2電極が前記第1半導体層に接触する面積との和に対する、前記第2電極が前記第2半導体層に接触する面積の比率は、20%以上である請求項5に記載の半導体装置。
- 窒化ガリウム系半導体で形成され、n型の導電型を有する第1半導体層と、前記第1半導体層の直上に積層され、p型不純物が1×1020cm−3以上の濃度で添加された窒化ガリウム系半導体で形成され、p型の導電型を有し、100nm未満の厚さである第2半導体層と、を有する半導体積層物を準備する工程と、
前記第1半導体層と接触するように配置された第1電極を形成する工程と、
前記第2半導体層と接触するように配置された第2電極を形成する工程と、
を有し、pn接合ダイオードとして機能する半導体装置を製造する、半導体装置の製造方法。 - 前記第2半導体層を部分的にウェットエッチングにより全厚さ除去して、前記第1半導体層を露出させる工程をさらに有し、
前記第2電極を形成する工程は、前記第2半導体層上から前記ウェットエッチングで露出した前記第1半導体層上に延在する形状となるように前記第2電極を形成することで、前記第2半導体層と接触するとともに前記第1半導体層と接触するように配置された前記第2電極を形成し、pn接合ダイオードとして機能するとともにショットキーバリアダイオードとして機能するジャンクションバリアショットキーダイオードを製造する、請求項7に記載の半導体装置の製造方法。 - 前記ウェットエッチングとして陽極酸化が用いられる請求項8に記載の半導体装置の製造方法。
- 窒化ガリウム系半導体で形成され、n型の導電型を有する第1半導体層と、
前記第1半導体層の直上に積層され、p型不純物が1×1020cm−3以上の濃度で添加された窒化ガリウム系半導体で形成され、p型の導電型を有し、100nm未満の厚さである第2半導体層と、
を有し、pn接合ダイオードとして機能させることができる半導体積層物。 - 前記第2半導体層の上面は、電極の接触領域として用意されている請求項10に記載の半導体積層物。
- 前記半導体積層物の上面を前記第2半導体層の上面が構成する請求項10または11に記載の半導体積層物。
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