JPWO2012137781A1 - 半導体積層体及びその製造方法、並びに半導体素子 - Google Patents
半導体積層体及びその製造方法、並びに半導体素子 Download PDFInfo
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- JPWO2012137781A1 JPWO2012137781A1 JP2013508883A JP2013508883A JPWO2012137781A1 JP WO2012137781 A1 JPWO2012137781 A1 JP WO2012137781A1 JP 2013508883 A JP2013508883 A JP 2013508883A JP 2013508883 A JP2013508883 A JP 2013508883A JP WO2012137781 A1 JPWO2012137781 A1 JP WO2012137781A1
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 192
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- 238000000034 method Methods 0.000 title claims abstract description 14
- 150000004767 nitrides Chemical class 0.000 claims abstract description 70
- 239000000758 substrate Substances 0.000 claims abstract description 62
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000001301 oxygen Substances 0.000 claims abstract description 12
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 12
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 claims description 54
- 239000013078 crystal Substances 0.000 claims description 53
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 abstract 2
- 239000012535 impurity Substances 0.000 description 15
- 238000005253 cladding Methods 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 2
- MHYQBXJRURFKIN-UHFFFAOYSA-N C1(C=CC=C1)[Mg] Chemical compound C1(C=CC=C1)[Mg] MHYQBXJRURFKIN-UHFFFAOYSA-N 0.000 description 1
- 229910021140 PdSi Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- UIUXUFNYAYAMOE-UHFFFAOYSA-N methylsilane Chemical compound [SiH3]C UIUXUFNYAYAMOE-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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Abstract
Description
図1Aは、第1の実施の形態に係る半導体積層体の断面図である。半導体積層体1は、Ga2O3基板2と、AlNバッファ層3と、窒化物半導体層4を含む。
第2の実施の形態として、第1の実施の形態の半導体積層体1を含む縦型FET(Field effect transistor)について述べる。
第3の実施の形態として、第1の実施の形態の半導体積層体1を含むMIS(Metal Insulator Semiconductor)ゲート構造の縦型FETについて述べる。
第4の実施の形態として、第1の実施の形態の半導体積層体1を含むショットキーゲート構造の縦型FETについて述べる。
第5の実施の形態として、第1の実施の形態の半導体積層体1を含む他のショットキーゲート構造の縦型FETについて述べる。
第6の実施の形態として、第1の実施の形態の半導体積層体1を含むヘテロ接合バイポーラトランジスタ(HBT)について述べる。
第7の実施の形態として、第1の実施の形態の半導体積層体1を含むショットキーバリアダイオード(SBD)について述べる。
第8の実施の形態として、第1の実施の形態の半導体積層体1を含む発光ダイオード(LED)について述べる。
第1の実施の形態によれば、酸素が六角格子配置された面、すなわち、(101)、(−201)、(301)、(3−10)のいずれかの面を主面とするGa2O3基板2上にAlN結晶をエピタキシャル成長させてAlNバッファ層3を形成することにより、AlNバッファ層3が薄い場合であっても、表面が鏡面であるGaN結晶等の窒化物半導体結晶をエピタキシャル成長させ、表面が鏡面である窒化物半導体層4を形成することができる。AlNバッファ層3を薄くすることにより、半導体積層体1の厚さ方向の電気抵抗を大きく低減することができる。
Claims (13)
- 酸素が六角格子配置された面を主面とするGa2O3基板と、
前記Ga2O3基板上のAlNバッファ層と、
前記AlNバッファ層上の窒化物半導体層と、
を含む半導体積層体。 - 前記Ga2O3基板の前記主面は、(101)、(−201)、(301)、(3−10)のいずれかの面である、
請求項1に記載の半導体積層体。 - 前記Ga2O3基板の前記主面は、(101)である、
請求項2に記載の半導体積層体。 - 前記AlNバッファ層の厚さは1nm以上5nm以下である、
請求項1〜3のいずれか1つに記載の半導体積層体。 - 前記AlNバッファ層の厚さは2nm以上3nm以下である、
請求項4に記載の半導体積層体。 - 前記窒化物半導体層はGaN層である、
請求項1に記載の半導体積層体。 - 厚さ方向の電圧降下が0.6V以下である、
請求項1に記載の半導体積層体。 - 前記窒化物半導体層は、前記AlNバッファ層側の一部の領域にSi濃度が5×1018/cm3以上であるSi高濃度領域を有する、
請求項1に記載の半導体積層体。 - 前記Si高濃度領域の厚さが2nm以上である、
請求項8に記載の半導体積層体。 - 酸素が六角格子配置された面を主面とするGa2O3基板と、前記Ga2O3基板上のAlNバッファ層と、前記AlNバッファ層上の窒化物半導体層と、を含む半導体積層体を含み、
前記半導体積層体の厚さ方向に通電する、
半導体素子。 - 酸素が六角格子配置された面を主面とするGa2O3基板上に、500℃以下の温度条件でAlN結晶をエピタキシャル成長させてAlNバッファ層を形成する工程と、
前記AlNバッファ層上に窒化物半導体結晶を成長させて窒化物半導体層を形成する工程と、
を含む半導体積層体の製造方法。 - 前記AlNバッファ層は1nm以上5nm以下の厚さに形成される、
請求項11に記載の半導体積層体の製造方法。 - 前記窒化物半導体結晶はGaN結晶である、
請求項11又は12に記載の半導体積層体の製造方法。
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