JP6721816B2 - 窒化物半導体テンプレート及び紫外線led - Google Patents
窒化物半導体テンプレート及び紫外線led Download PDFInfo
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- JP6721816B2 JP6721816B2 JP2015130442A JP2015130442A JP6721816B2 JP 6721816 B2 JP6721816 B2 JP 6721816B2 JP 2015130442 A JP2015130442 A JP 2015130442A JP 2015130442 A JP2015130442 A JP 2015130442A JP 6721816 B2 JP6721816 B2 JP 6721816B2
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- 239000004065 semiconductor Substances 0.000 title claims description 172
- 150000004767 nitrides Chemical class 0.000 title claims description 170
- 239000000758 substrate Substances 0.000 claims description 46
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 claims description 37
- 239000007789 gas Substances 0.000 description 35
- 239000000203 mixture Substances 0.000 description 23
- 239000012159 carrier gas Substances 0.000 description 8
- 238000005253 cladding Methods 0.000 description 8
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 8
- 238000000103 photoluminescence spectrum Methods 0.000 description 7
- 239000002994 raw material Substances 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 6
- 238000011156 evaluation Methods 0.000 description 6
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 238000005424 photoluminescence Methods 0.000 description 5
- 238000005259 measurement Methods 0.000 description 4
- 238000002441 X-ray diffraction Methods 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910001195 gallium oxide Inorganic materials 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000001028 reflection method Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
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- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
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- H01L21/02414—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
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- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
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- H01L21/02494—Structure
- H01L21/02496—Layer structure
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
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- H01L21/0254—Nitrides
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
- H01L31/03048—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP comprising a nitride compounds, e.g. InGaN
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
- H01L31/1848—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P comprising nitride compounds, e.g. InGaN, InGaAlN
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- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/1026—Compound semiconductors
- H01L2924/1032—III-V
- H01L2924/10344—Aluminium gallium nitride [AlGaN]
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- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/1026—Compound semiconductors
- H01L2924/1032—III-V
- H01L2924/10356—Indium gallium arsenide nitride [InGaAsN]
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- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Electromagnetism (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Led Devices (AREA)
- Recrystallisation Techniques (AREA)
Description
(窒化物半導体テンプレートの構造)
図1は、第1の実施の形態に係る窒化物半導体テンプレート10の垂直断面図である。窒化物半導体テンプレート10は、発光波長が300〜360nmの紫外線LEDの用途に適したテンプレートである。
以下に、窒化物半導体テンプレート10の製造方法の一例について説明する。
以下の表1は、各層の成長条件と、第2の窒化物半導体層の表面状態の評価結果を示す。
図5は、第3の窒化物半導体層15のフォトルミネッセンススペクトルを示す。このフォトルミネッセンス測定は、井戸層としての3層のIn0.02Al0.19Ga0.79N層と、それらの層間、並びに最上層及び最下層に1層ずつ形成された障壁層としての合計4層のIn0.02Al0.29Ga0.69N層からなる量子井戸構造を有する第3の窒化物半導体層15に対して実施した。また、比較例として、井戸層としての3層のAl0.2Ga0.8N層と、それらの層間、並びに最上層及び最下層に1層ずつ形成された障壁層としての合計4層のAl0.3Ga0.7N層からなる量子井戸構造を有するInを含まない窒化物半導体層のフォトルミネッセンススペクトルも測定した。
第2の実施の形態は、実施の形態の窒化物半導体テンプレート10を含む紫外線LEDについての形態である。
図6は、第2の実施の形態に係る紫外線LED20の垂直断面図である。紫外線LED20は、Ga2O3基板21と、Ga2O3基板21上のバッファ層22と、バッファ層22上のn型クラッド層23と、n型クラッド層23上の発光層24と、発光層24上のp型電子ブロック層25と、p型電子ブロック層25上のp型クラッド層26と、p型クラッド層26上のコンタクト層27と、コンタクト層27上のp側電極28と、Ga2O3基板21のバッファ層22と反対側の面上のn側電極29とを有する。
図7は、紫外線LED20に印加する電流と発光出力との関係を示すグラフである。この発光出力の測定は、第3の窒化物半導体層15からなる発光層24がIn0.02Al0.19Ga0.79N上にIn0.02Al0.29Ga0.69Nを積層した量子井戸構造3層を有する、チップサイズが400μm×600μmの紫外線LED20に対して実施した。また、比較例として、Ga2O3基板21の代わりにサファイア基板を用いて作製したLEDの発光出力も測定した。この比較例に係るLEDの基板以外の層の組成は、発光出力を測定した紫外線LED20のものと同じである。
上記第1の実施の形態によれば、高品質な窒化物半導体をGa2O3基板上に有する、発光波長が300〜360nmの紫外線LED用途に適した窒化物半導体テンプレートを得ることができる。
Claims (3)
- Ga2O3基板と、
前記Ga2O3基板上に形成された、AlNを主成分とするバッファ層と、
前記バッファ層上に形成された、AlxGa1−xN(0.2<x≦1)を主成分とする第1の窒化物半導体層と、
前記第1の窒化物半導体層上に形成された、AlyGa1−yN(0.2≦y≦0.55、y<x)を主成分とする第2の窒化物半導体層と、
前記第2の窒化物半導体層上に形成された、Inu1Alv1Gaw1N(0.02≦u1≦0.03、u1+v1+w1=1)層の両面をInu2Alv2Gaw2N(0.02≦u2≦0.03、u2+v2+w2=1、v1+0.05≦v2≦v1+0.2)層で挟んだ構造を含む多層構造を有する第3の窒化物半導体層と、
を有し、
前記第2の窒化物半導体層が表面にクラックを有さず、
前記第2の窒化物半導体層が表面にピットを有さず、
前記第2の窒化物半導体層の転位密度が2.0×10 10 cm −2 以下である、
窒化物半導体テンプレート。 - 前記バッファ層の厚さが10nm以下である、
請求項1に記載の窒化物半導体テンプレート。 - 請求項1又は2に記載の窒化物半導体テンプレートを含む、紫外線LED。
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JP2015130442A JP6721816B2 (ja) | 2015-06-29 | 2015-06-29 | 窒化物半導体テンプレート及び紫外線led |
US15/050,655 US9520527B1 (en) | 2015-06-29 | 2016-02-23 | Nitride semiconductor template and ultraviolet LED |
KR1020160022811A KR20170002276A (ko) | 2015-06-29 | 2016-02-25 | 질화물 반도체 템플릿 및 자외선 led |
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JP6721816B2 true JP6721816B2 (ja) | 2020-07-15 |
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GB201705755D0 (en) * | 2017-04-10 | 2017-05-24 | Norwegian Univ Of Science And Tech (Ntnu) | Nanostructure |
JP2019186262A (ja) * | 2018-04-02 | 2019-10-24 | ウシオオプトセミコンダクター株式会社 | 窒化物半導体発光素子 |
JP2019192731A (ja) * | 2018-04-23 | 2019-10-31 | 旭化成株式会社 | 窒化物半導体装置、窒化物半導体装置の製造方法 |
CN111446332A (zh) * | 2020-04-17 | 2020-07-24 | 中国科学院长春光学精密机械与物理研究所 | 一种AlGaN单极载流子日盲紫外探测器及其制备方法 |
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JP4705412B2 (ja) * | 2005-06-06 | 2011-06-22 | パナソニック株式会社 | 電界効果トランジスタ及びその製造方法 |
JP2007201195A (ja) * | 2006-01-26 | 2007-08-09 | Sumitomo Electric Ind Ltd | 窒化物半導体発光素子 |
JP4282708B2 (ja) * | 2006-10-20 | 2009-06-24 | 株式会社東芝 | 窒化物系半導体装置 |
JP5164641B2 (ja) * | 2008-04-02 | 2013-03-21 | Dowaエレクトロニクス株式会社 | 電流狭窄型半導体発光素子の製造方法 |
KR20140030180A (ko) | 2011-04-08 | 2014-03-11 | 가부시키가이샤 다무라 세이사쿠쇼 | 반도체 적층체 및 그 제조 방법과 반도체 소자 |
JP2013237591A (ja) * | 2012-05-16 | 2013-11-28 | Namiki Precision Jewel Co Ltd | 酸化ガリウム融液、酸化ガリウム単結晶、酸化ガリウム基板、および酸化ガリウム単結晶の製造方法 |
JP2013251440A (ja) * | 2012-06-01 | 2013-12-12 | Tamura Seisakusho Co Ltd | 半導体積層構造体及び半導体素子 |
JP2014201457A (ja) * | 2013-04-02 | 2014-10-27 | 株式会社タムラ製作所 | 結晶積層構造体の製造方法 |
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- 2016-02-23 US US15/050,655 patent/US9520527B1/en active Active
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JP2017017114A (ja) | 2017-01-19 |
KR20170002276A (ko) | 2017-01-06 |
US20160380152A1 (en) | 2016-12-29 |
US9520527B1 (en) | 2016-12-13 |
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