JP2022147881A - Ga2O3系単結晶基板並びにGa2O3系単結晶基板の製造方法 - Google Patents
Ga2O3系単結晶基板並びにGa2O3系単結晶基板の製造方法 Download PDFInfo
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- JP2022147881A JP2022147881A JP2021049332A JP2021049332A JP2022147881A JP 2022147881 A JP2022147881 A JP 2022147881A JP 2021049332 A JP2021049332 A JP 2021049332A JP 2021049332 A JP2021049332 A JP 2021049332A JP 2022147881 A JP2022147881 A JP 2022147881A
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Abstract
Description
まず、主面15上の全ての高さデータによる最小二乗平面が、基準平面Sとなる。
本実施例サンプル1~7に係るGa2O3系単結晶基板を、EFG法によりb軸引き上げで育成した単結晶からコアドリルによって切り抜き、形成した。各実施例サンプル1~7の共通条件は次の通りである。基板の平面方向の形状は、全て図3に示す1つのオリフラ面を設けた円形状であり、基板を形成するGa2O3系単結晶はβ-Ga2O3単結晶とし、Siがドープされ0.05mol%含有されている。更に、Ga2O3系単結晶基板の直径はφ2インチ、主面はオフ角が0.0°の(101)面、厚みは0.70mm、主面の転位密度は4x104個/cm2で双晶フリーである。
また比較例サンプル1~2として、Ga2O3系単結晶基板の反り量を、実施例1と同様に加工し、表2の様に形成した。
実施例サンプル8~14に係るGa2O3系単結晶基板を、EFG法によりb軸で引き上げて育成した単結晶からスライシングマシンによって20mm×30mmの長方形に切り抜き形成した。各実施例サンプル8~14の共通条件は次の通りである。基板の平面方向の形状は、全て長方形であり、基板を形成するGa2O3系単結晶はβ-Ga2O3単結晶とし、Siがドープされ0.05mol%含有されている。更に、Ga2O3系単結晶基板の主面はオフ角が0.0°の(101)面、厚みは0.70mm、主面の転位密度は4x104個/cm2で双晶フリーである。
また比較例サンプル3~4として、実施例2と同様に加工してGa2O3系単結晶基板の反り量を表4の様に形成した。
実施例1サンプルのうち、クラックや剥離が発生していないサンプル4と同条件のものを複製し、光デバイスである縦型紫外LEDを作製した。
実施例1サンプルのうち、クラックや剥離が発生していないサンプル5と同条件のものを複製し、高耐圧電力用デバイスである縦型金属絶縁半導体型電界効果トランジスタ(MISFET:Metal-Insulator-Semiconductor Field Effect Transistor)を作製する。
2 Ga2O3を含む融液
3 坩堝
4 支持台
5 ダイ
5A スリット
5B ダイ上面部
6 蓋
7 熱電対
8 保温材
9 ヒータ部
10 種結晶
11 種結晶保持具
12 シャフト
13 Ga2O3系単結晶
13a ネック部またはネッキング
13b スプレディング
13c 直胴部
14 第1のオリエンテーションフラット面
15 Ga2O3系単結晶基板の主面
16、21 Ga2O3系単結晶基板
17 第2のオリエンテーションフラット面
19 Ga2O3系単結晶基板の裏面
20 Ga2O3系単結晶の面
22 円形状のGa2O3系単結晶基板に於ける周縁部に近い領域
23 縦型紫外LED
24 AlNバッファ層
25 n型Al0.4Ga0.6N層
26 InAl0.4Ga0.6N層
27 InAl0.5Ga0.5N障壁層
28 InAl0.3Ga0.7N量子井戸層
29 Mgドープp型InAl0.6Ga0.4N電子ブロック層
30 Mgドープp型InAl0.5Ga0.5Nクラッド層
31 Mgドープp型InAl0.3Ga0.7Nコンタクト層
32 p側電極
33 n側電極
34 縦型MISFET
35 p型領域
36 n+型領域
37 ソース電極
38 ゲート絶縁体
39 ゲート電極
40 ドレイン電極
A Ga2O3系単結晶基板の基準平面Sから最高点までの垂直距離
B Ga2O3系単結晶基板の基準平面Sから最低点までの垂直距離
C Ga2O3系単結晶基板の主面中心
S Ga2O3系単結晶基板の主面に於ける最小二乗平面
t Ga2O3系単結晶基板の厚み
θ スプレディング角度
Claims (18)
- 主面の反り量が-50μm以上50μm以下(0μmを含む)であるGa2O3系単結晶基板。
- 平面形状が円形状であり、円形状の直径が24mm以上160mm以下で、厚みが0.1mm以上2.0mm以下である請求項1に記載のGa2O3系単結晶基板。
- 平面形状が方形状であり、方形状の長辺が15mm以上150mm以下で、厚みが0.1mm以上2.0mm以下である請求項1に記載のGa2O3系単結晶基板。
- 前記方形状が正方形で、少なくとも一つ以上の角が欠けている請求項3に記載のGa2O3系単結晶基板。
- 前記主面が(100)面、(010)面、(001)面、(-201)面、(101)面の何れかである請求項1~4の何れかに記載のGa2O3系単結晶基板。
- (100)面、(010)面、(001)面、(-201)面、(101)面の何れかに対して、7°以下の範囲で傾斜した面(但し、0°は含まない)が、前記主面である請求項1~4の何れかに記載のGa2O3系単結晶基板。
- 前記主面が(100)面もしくは(100)面から7°以下の範囲で傾斜した面で、前記主面に垂直でありかつb軸に対して平行又は5°の範囲内で傾斜した端面が、少なくとも1つ設けられている請求項1~4の何れかに記載のGa2O3系単結晶基板。
- 前記主面が(100)面以外もしくは(100)面以外の面から7°以下の範囲で傾斜した面以外であり、前記主面に垂直でありかつ前記主面と(100)面との交線に対し平行又は平行方向から5°の範囲内で傾斜した端面が、少なくとも1つ設けられている請求項1~4の何れかに記載のGa2O3系単結晶基板。
- 前記主面の転位密度が0個/cm2以上1×105個/cm2以下である請求項1~8の何れかに記載のGa2O3系単結晶基板。
- n型ドーパントである第14族元素又は第17族元素の1つ以上の元素を、計0.02mol%以上0.15 mol%以下の範囲で含有する請求項1~9の何れかに記載のGa2O3系単結晶基板。
- p型ドーパントである第1族元素、第2族元素、第15族元素、又はFe、Cu、Znの1つ以上の元素を、計0.02mol%以上0.15 mol%以下の範囲で含有する請求項1~9の何れかに記載のGa2O3系単結晶基板。
- 前記主面上にAlxGa(1-x)N(0≦X≦1)系半導体層が形成されている請求項1~11の何れかに記載のGa2O3系単結晶基板。
- 前記主面上に、Ga2O3系エピタキシャル層又はAlGaN系エピタキシャル層が積層形成されている請求項1~11の何れかに記載のGa2O3系単結晶基板。
- 前記Ga2O3系エピタキシャル層又は前記AlGaN系エピタキシャル層の厚みが、1nm以上50μm以下である請求項13に記載のGa2O3系単結晶基板。
- 前記Ga2O3系エピタキシャル層、又は前記AlGaN系エピタキシャル層の表面粗さRaが、3nm以下である請求項13又は14に記載のGa2O3系単結晶基板。
- 誘導加熱方式の単結晶育成方法によって育成されるGa2O3系単結晶から基板加工されて、主面の反り量が-50μm以上50μm以下(0μmを含む)になるGa2O3系単結晶基板の製造方法。
- 前記Ga2O3系単結晶を育成する方向が、a軸,b軸,c軸方向の何れか、又はa軸,b軸,c軸方向の何れかの方向に対して7°以下の範囲で傾斜した方向(但し、0°は含まない)である請求項16に記載のGa2O3系単結晶基板の製造方法。
- 前記Ga2O3系単結晶基板の全表面のうち、少なくとも主面上に、Ga2O3系エピタキシャル層又はAlGaN系エピタキシャル層を積層形成する請求項16又は17の何れかに記載のGa2O3系単結晶基板の製造方法。
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TW111108149A TW202302934A (zh) | 2021-03-24 | 2022-03-07 | Ga2O3系單晶基板及Ga2O3系單晶基板的製造方法 |
EP22775531.1A EP4317547A4 (en) | 2021-03-24 | 2022-03-22 | GA2O3-BASED MONOCRYSTALLINE SUBSTRATE AND METHOD FOR MANUFACTURING GA2O3-BASED MONOCRYSTALLINE SUBSTRATE |
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JP2010087486A (ja) * | 2008-09-08 | 2010-04-15 | Sumitomo Electric Ind Ltd | 基板、エピタキシャル層付基板およびそれらの製造方法 |
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