JP5865271B2 - 結晶積層構造体及び発光素子 - Google Patents
結晶積層構造体及び発光素子 Download PDFInfo
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- JP5865271B2 JP5865271B2 JP2013003941A JP2013003941A JP5865271B2 JP 5865271 B2 JP5865271 B2 JP 5865271B2 JP 2013003941 A JP2013003941 A JP 2013003941A JP 2013003941 A JP2013003941 A JP 2013003941A JP 5865271 B2 JP5865271 B2 JP 5865271B2
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- 239000013078 crystal Substances 0.000 title claims description 109
- 239000000758 substrate Substances 0.000 claims description 110
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 claims description 101
- 239000004065 semiconductor Substances 0.000 claims description 101
- 150000004767 nitrides Chemical class 0.000 claims description 94
- 238000005121 nitriding Methods 0.000 claims 1
- 230000000052 comparative effect Effects 0.000 description 25
- 238000005253 cladding Methods 0.000 description 20
- 239000007789 gas Substances 0.000 description 11
- 239000002994 raw material Substances 0.000 description 11
- 238000005259 measurement Methods 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 8
- 238000000605 extraction Methods 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000004140 cleaning Methods 0.000 description 5
- 238000002834 transmittance Methods 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 238000013041 optical simulation Methods 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 4
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 4
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000284 extract Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000005036 potential barrier Methods 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 208000012868 Overgrowth Diseases 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02414—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
-
- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02433—Crystal orientation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02488—Insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02609—Crystal orientation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02639—Preparation of substrate for selective deposition
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
- H01L33/18—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous within the light emitting region
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Led Devices (AREA)
- Chemical Vapour Deposition (AREA)
- Inorganic Chemistry (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
Description
(結晶積層構造体の構造)
図1は、第1の実施の形態に係る結晶積層構造体の垂直断面図である。結晶積層構造体1は、Ga2O3基板2と、Ga2O3基板2上の誘電体層3と、誘電体層3上の窒化物半導体層4を含む。
以下に、本実施の形態の結晶積層構造体の製造工程の一例として、誘電体層3がSiN層である場合の製造工程の例について説明する。
図3(a)は、第1の実施の形態に係る結晶積層構造体の窒化物半導体層形成前のSEM(Scanning Electron Microscope)写真であり、図3(b)、(c)は、窒化物半導体層形成後のSEM写真である。
第1の実施の形態によれば、誘電体層3が形成されたGa2O3基板2の上面上に窒化物半導体層4を形成することにより、窒化物半導体層4とGa2O3基板2の間の光の透過率を向上させることができる。また、窒化物半導体層4の結晶品質を向上させ、特に誘電体層3がSiN層である場合は、Ga2O3基板2と窒化物半導体層4をオーミック接合させることができる。また、窒化物半導体層4がGaN層である場合は、本実施の形態により結晶品質を向上させることができる。
(発光素子の構造)
第2の実施の形態は、第1の実施の形態の結晶積層構造体1を含む発光素子についての形態である。以下に、その発光素子の一例について説明する。
以下に、本実施の形態に係る発光素子100の電流−電圧特性、及び光出力特性を比較例に係る発光素子の特性と比較して説明する。
第2の実施の形態によれば、窒化物半導体層4の結晶品質が高く、Ga2O3基板2と窒化物半導体層4がオーミック接合した第1の実施の形態の結晶積層構造体1を用いることにより、光出力が高く、かつ駆動電圧が低い発光素子100を得ることができる。
Claims (5)
- (101)、(−201)、及び(100)の1つを主面とするGa2O3基板と、
前記Ga2O3基板上に、前記Ga2O3基板と接触し、かつその上面を部分的に覆うように形成された、前記Ga2O3基板との屈折率の差が0.15以下である誘電体層と、
前記Ga2O3基板上に前記誘電体層を介して形成され、前記誘電体層に接触し、かつ前記Ga2O3基板の上面の前記誘電体層に覆われていない部分に接触する窒化物半導体層と、
を有し、
前記誘電体層に覆われていない部分の前記Ga 2 O 3 基板と接触する前記窒化物半導体層は、前記Ga 2 O 3 基板とオーミック接合する結晶積層構造体。 - 前記誘電体層がSiNを主成分とするSiN層である、
請求項1に記載の結晶積層構造体。 - 前記窒化物半導体層がGaN層である、
請求項1又は2に記載の結晶積層構造体。 - 前記誘電体層の厚さが0.5μm以上である、
請求項1〜3のいずれか1項に記載の結晶積層構造体。 - 請求項1〜4のいずれか1項に記載の結晶積層構造体を含み、
前記Ga2O3基板及び前記窒化物半導体層に通電する発光素子。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013003941A JP5865271B2 (ja) | 2013-01-11 | 2013-01-11 | 結晶積層構造体及び発光素子 |
US14/759,178 US20150364646A1 (en) | 2013-01-11 | 2013-12-25 | Crystal layered structure and light emitting element |
EP13870949.8A EP2945187A4 (en) | 2013-01-11 | 2013-12-25 | CRYSTAL SHIELD STRUCTURE AND LIGHT-EMITTING ELEMENT |
PCT/JP2013/084683 WO2014109233A1 (ja) | 2013-01-11 | 2013-12-25 | 結晶積層構造体及び発光素子 |
KR1020157021449A KR20150104199A (ko) | 2013-01-11 | 2013-12-25 | 결정 적층 구조체 및 발광 소자 |
CN201380068787.9A CN104885195B (zh) | 2013-01-11 | 2013-12-25 | 晶体层叠结构体和发光元件 |
TW103101008A TW201434174A (zh) | 2013-01-11 | 2014-01-10 | 結晶積層構造體及發光元件 |
Applications Claiming Priority (1)
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JP2013003941A JP5865271B2 (ja) | 2013-01-11 | 2013-01-11 | 結晶積層構造体及び発光素子 |
Related Child Applications (1)
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JP2014120320A Division JP2014187388A (ja) | 2014-06-11 | 2014-06-11 | 結晶積層構造体及び発光素子 |
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JP2014135450A JP2014135450A (ja) | 2014-07-24 |
JP5865271B2 true JP5865271B2 (ja) | 2016-02-17 |
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JP2013003941A Active JP5865271B2 (ja) | 2013-01-11 | 2013-01-11 | 結晶積層構造体及び発光素子 |
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US (1) | US20150364646A1 (ja) |
EP (1) | EP2945187A4 (ja) |
JP (1) | JP5865271B2 (ja) |
KR (1) | KR20150104199A (ja) |
CN (1) | CN104885195B (ja) |
TW (1) | TW201434174A (ja) |
WO (1) | WO2014109233A1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2016143622A (ja) * | 2015-02-04 | 2016-08-08 | 株式会社タムラ製作所 | Led照明装置、投光器及びヘッドライト |
JP6811646B2 (ja) * | 2017-02-28 | 2021-01-13 | 株式会社タムラ製作所 | 窒化物半導体テンプレート及びその製造方法 |
GB201705755D0 (en) * | 2017-04-10 | 2017-05-24 | Norwegian Univ Of Science And Tech (Ntnu) | Nanostructure |
JP6991503B2 (ja) * | 2017-07-06 | 2022-01-12 | 株式会社タムラ製作所 | ショットキーバリアダイオード |
Family Cites Families (8)
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JP3595277B2 (ja) | 2001-03-21 | 2004-12-02 | 三菱電線工業株式会社 | GaN系半導体発光ダイオード |
JP3966207B2 (ja) * | 2003-03-28 | 2007-08-29 | 豊田合成株式会社 | 半導体結晶の製造方法及び半導体発光素子 |
JP2006253172A (ja) * | 2005-03-08 | 2006-09-21 | Toshiba Corp | 半導体発光素子、半導体発光装置及び半導体発光素子の製造方法 |
JP5060055B2 (ja) * | 2006-02-09 | 2012-10-31 | 浜松ホトニクス株式会社 | 窒化化合物半導体基板及び半導体デバイス |
KR101020958B1 (ko) * | 2008-11-17 | 2011-03-09 | 엘지이노텍 주식회사 | 산화갈륨기판 제조방법, 발광소자 및 발광소자 제조방법 |
JP5529420B2 (ja) * | 2009-02-09 | 2014-06-25 | 住友電気工業株式会社 | エピタキシャルウエハ、窒化ガリウム系半導体デバイスを作製する方法、窒化ガリウム系半導体デバイス、及び酸化ガリウムウエハ |
JPWO2012093601A1 (ja) * | 2011-01-07 | 2014-06-09 | 三菱化学株式会社 | エピタキシャル成長用基板およびGaN系LEDデバイス |
WO2012137781A1 (ja) * | 2011-04-08 | 2012-10-11 | 株式会社タムラ製作所 | 半導体積層体及びその製造方法、並びに半導体素子 |
-
2013
- 2013-01-11 JP JP2013003941A patent/JP5865271B2/ja active Active
- 2013-12-25 EP EP13870949.8A patent/EP2945187A4/en not_active Withdrawn
- 2013-12-25 KR KR1020157021449A patent/KR20150104199A/ko not_active Application Discontinuation
- 2013-12-25 US US14/759,178 patent/US20150364646A1/en not_active Abandoned
- 2013-12-25 CN CN201380068787.9A patent/CN104885195B/zh active Active
- 2013-12-25 WO PCT/JP2013/084683 patent/WO2014109233A1/ja active Application Filing
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2014
- 2014-01-10 TW TW103101008A patent/TW201434174A/zh unknown
Also Published As
Publication number | Publication date |
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JP2014135450A (ja) | 2014-07-24 |
TW201434174A (zh) | 2014-09-01 |
KR20150104199A (ko) | 2015-09-14 |
CN104885195B (zh) | 2018-01-16 |
US20150364646A1 (en) | 2015-12-17 |
EP2945187A1 (en) | 2015-11-18 |
CN104885195A (zh) | 2015-09-02 |
EP2945187A4 (en) | 2016-08-24 |
WO2014109233A1 (ja) | 2014-07-17 |
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