JP6635670B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP6635670B2
JP6635670B2 JP2015078296A JP2015078296A JP6635670B2 JP 6635670 B2 JP6635670 B2 JP 6635670B2 JP 2015078296 A JP2015078296 A JP 2015078296A JP 2015078296 A JP2015078296 A JP 2015078296A JP 6635670 B2 JP6635670 B2 JP 6635670B2
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Prior art keywords
circuit
transistor
film
oxide semiconductor
potential
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Japanese (ja)
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JP2015207761A5 (enExample
JP2015207761A (ja
Inventor
達也 大貫
達也 大貫
加藤　清
清 加藤
塩野入　豊
豊 塩野入
熱海　知昭
知昭 熱海
隆徳 松嵜
隆徳 松嵜
広樹 井上
広樹 井上
修平 長塚
修平 長塚
裕人 八窪
裕人 八窪
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2015078296A priority Critical patent/JP6635670B2/ja
Publication of JP2015207761A publication Critical patent/JP2015207761A/ja
Publication of JP2015207761A5 publication Critical patent/JP2015207761A5/ja
Priority to JP2019227679A priority patent/JP6902087B2/ja
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
    • G11C5/025—Geometric lay-out considerations of storage- and peripheral-blocks in a semiconductor storage device
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4097—Bit-line organisation, e.g. bit-line layout, folded bit lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D87/00—Integrated devices comprising both bulk components and either SOI or SOS components on the same substrate

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Thin Film Transistor (AREA)
  • Semiconductor Memories (AREA)
  • Dram (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
JP2015078296A 2014-04-11 2015-04-07 半導体装置 Active JP6635670B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2015078296A JP6635670B2 (ja) 2014-04-11 2015-04-07 半導体装置
JP2019227679A JP6902087B2 (ja) 2014-04-11 2019-12-17 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2014081616 2014-04-11
JP2014081616 2014-04-11
JP2015078296A JP6635670B2 (ja) 2014-04-11 2015-04-07 半導体装置

Related Child Applications (1)

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JP2019227679A Division JP6902087B2 (ja) 2014-04-11 2019-12-17 半導体装置

Publications (3)

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JP2015207761A JP2015207761A (ja) 2015-11-19
JP2015207761A5 JP2015207761A5 (enExample) 2018-05-17
JP6635670B2 true JP6635670B2 (ja) 2020-01-29

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JP2015078296A Active JP6635670B2 (ja) 2014-04-11 2015-04-07 半導体装置
JP2019227679A Active JP6902087B2 (ja) 2014-04-11 2019-12-17 半導体装置

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US (1) US9542977B2 (enExample)
JP (2) JP6635670B2 (enExample)

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WO2015170220A1 (en) * 2014-05-09 2015-11-12 Semiconductor Energy Laboratory Co., Ltd. Memory device and electronic device
WO2016055903A1 (en) 2014-10-10 2016-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, circuit board, and electronic device
US10186311B2 (en) * 2015-05-07 2019-01-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device or electronic component including the same
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JPWO2017158465A1 (ja) * 2016-03-18 2019-02-14 株式会社半導体エネルギー研究所 記憶装置
TWI734781B (zh) 2016-05-20 2021-08-01 日商半導體能源研究所股份有限公司 半導體裝置、電子構件及電子裝置
JP6917160B2 (ja) * 2017-02-26 2021-08-11 住友化学株式会社 半導体基板、電子デバイス、半導体基板の検査方法および電子デバイスの製造方法
JP7225349B2 (ja) * 2017-06-23 2023-02-20 株式会社半導体エネルギー研究所 記憶装置
WO2019003045A1 (ja) 2017-06-27 2019-01-03 株式会社半導体エネルギー研究所 記憶装置
US10984840B2 (en) 2017-09-06 2021-04-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US11094360B2 (en) 2017-10-13 2021-08-17 Semiconductor Energy Laboratory Co., Ltd. Storage device, electronic component, and electronic device
WO2020095148A1 (ja) * 2018-11-08 2020-05-14 株式会社半導体エネルギー研究所 半導体装置、及び電子機器
KR20250125448A (ko) * 2019-02-22 2025-08-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 오류 검출 기능을 가지는 기억 장치, 반도체 장치, 및 전자 기기
JP7480113B2 (ja) 2019-02-22 2024-05-09 株式会社半導体エネルギー研究所 半導体装置および当該半導体装置を有する電気機器
JP7524175B2 (ja) 2019-06-07 2024-07-29 株式会社半導体エネルギー研究所 半導体装置
JP7720782B2 (ja) 2019-08-22 2025-08-08 株式会社半導体エネルギー研究所 メモリセルおよび記憶装置
US12219778B2 (en) * 2020-06-29 2025-02-04 Taiwan Semiconductor Manufacturing Company Limited Multi-gate selector switches for memory cells and methods of forming the same
KR20250154423A (ko) * 2023-03-01 2025-10-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법

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