JP6573072B2 - フィルム拡張装置およびそれを用いた電子部品の製造方法 - Google Patents

フィルム拡張装置およびそれを用いた電子部品の製造方法 Download PDF

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Publication number
JP6573072B2
JP6573072B2 JP2015168231A JP2015168231A JP6573072B2 JP 6573072 B2 JP6573072 B2 JP 6573072B2 JP 2015168231 A JP2015168231 A JP 2015168231A JP 2015168231 A JP2015168231 A JP 2015168231A JP 6573072 B2 JP6573072 B2 JP 6573072B2
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Japan
Prior art keywords
film
chips
dimension
expansion
contact portion
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JP2015168231A
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English (en)
Japanese (ja)
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JP2017045898A (ja
Inventor
美由樹 水上
美由樹 水上
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Murata Manufacturing Co Ltd
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Murata Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Murata Manufacturing Co Ltd filed Critical Murata Manufacturing Co Ltd
Priority to JP2015168231A priority Critical patent/JP6573072B2/ja
Priority to KR1020160106690A priority patent/KR101869284B1/ko
Priority to CN201610729888.1A priority patent/CN106486396B/zh
Publication of JP2017045898A publication Critical patent/JP2017045898A/ja
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Publication of JP6573072B2 publication Critical patent/JP6573072B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/52—Mounting semiconductor bodies in containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
    • H01L2221/68386—Separation by peeling
JP2015168231A 2015-08-27 2015-08-27 フィルム拡張装置およびそれを用いた電子部品の製造方法 Active JP6573072B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2015168231A JP6573072B2 (ja) 2015-08-27 2015-08-27 フィルム拡張装置およびそれを用いた電子部品の製造方法
KR1020160106690A KR101869284B1 (ko) 2015-08-27 2016-08-23 필름 확장 장치 및 그것을 이용한 전자부품의 제조 방법
CN201610729888.1A CN106486396B (zh) 2015-08-27 2016-08-25 膜扩展装置以及使用该膜扩展装置的电子部件的制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015168231A JP6573072B2 (ja) 2015-08-27 2015-08-27 フィルム拡張装置およびそれを用いた電子部品の製造方法

Publications (2)

Publication Number Publication Date
JP2017045898A JP2017045898A (ja) 2017-03-02
JP6573072B2 true JP6573072B2 (ja) 2019-09-11

Family

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Family Applications (1)

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JP2015168231A Active JP6573072B2 (ja) 2015-08-27 2015-08-27 フィルム拡張装置およびそれを用いた電子部品の製造方法

Country Status (3)

Country Link
JP (1) JP6573072B2 (ko)
KR (1) KR101869284B1 (ko)
CN (1) CN106486396B (ko)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6938212B2 (ja) * 2017-05-11 2021-09-22 株式会社ディスコ 加工方法
JP6912938B2 (ja) * 2017-05-29 2021-08-04 リンテック株式会社 離間装置および離間方法
JP6791208B2 (ja) * 2018-05-22 2020-11-25 信越半導体株式会社 発光素子の製造方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5831414Y2 (ja) * 1977-06-20 1983-07-12 日本電気ホームエレクトロニクス株式会社 テ−プ伸長装置
JPS5984438A (ja) * 1982-11-04 1984-05-16 Nec Corp シ−ト拡張装置
JPH0346253A (ja) * 1989-07-14 1991-02-27 Fujitsu Ltd ウェハ拡張装置
JPH03250751A (ja) * 1990-02-28 1991-11-08 Mitsubishi Electric Corp ウエハエキスパンド装置
JP2680935B2 (ja) * 1991-02-07 1997-11-19 九州日本電気株式会社 シート拡大機
JPH04352452A (ja) * 1991-05-30 1992-12-07 Sharp Corp ウエハ分割方法
KR0119765Y1 (ko) * 1991-12-24 1993-07-28 반도체 칩 접착 장비의 테이프 확정작업대 구조
JPH08102452A (ja) * 1994-09-30 1996-04-16 Sharp Corp 半導体チップ搭載シートの拡張装置
JP4306359B2 (ja) * 2003-07-25 2009-07-29 株式会社東京精密 エキスパンド方法
JP2005101288A (ja) * 2003-09-25 2005-04-14 Sharp Corp シート拡大装置
JP4714950B2 (ja) * 2005-11-18 2011-07-06 株式会社東京精密 エキスパンドリング、及び該エキスパンドリングを使用した基板の分割方法
JP2010147316A (ja) * 2008-12-19 2010-07-01 Disco Abrasive Syst Ltd テープ拡張方法およびテープ拡張装置
JP2011077482A (ja) * 2009-10-02 2011-04-14 Disco Abrasive Syst Ltd テープ拡張装置
JP5409280B2 (ja) * 2009-11-09 2014-02-05 株式会社ディスコ チップ間隔拡張方法
JP5128575B2 (ja) 2009-12-04 2013-01-23 リンテック株式会社 ステルスダイシング用粘着シート及び半導体装置の製造方法
JP2012156400A (ja) * 2011-01-27 2012-08-16 Disco Abrasive Syst Ltd テープ拡張装置
JP5013148B1 (ja) * 2011-02-16 2012-08-29 株式会社東京精密 ワーク分割装置及びワーク分割方法
JP5780169B2 (ja) * 2011-03-14 2015-09-16 株式会社村田製作所 積層セラミック電子部品の製造方法
JP5472275B2 (ja) * 2011-12-14 2014-04-16 株式会社村田製作所 エキスパンド装置及び部品の製造方法

Also Published As

Publication number Publication date
KR20170026169A (ko) 2017-03-08
CN106486396B (zh) 2020-03-13
JP2017045898A (ja) 2017-03-02
KR101869284B1 (ko) 2018-06-20
CN106486396A (zh) 2017-03-08

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