JP6545976B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP6545976B2
JP6545976B2 JP2015041939A JP2015041939A JP6545976B2 JP 6545976 B2 JP6545976 B2 JP 6545976B2 JP 2015041939 A JP2015041939 A JP 2015041939A JP 2015041939 A JP2015041939 A JP 2015041939A JP 6545976 B2 JP6545976 B2 JP 6545976B2
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Prior art keywords
transistor
film
oxide semiconductor
insulating film
electrode
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Japanese (ja)
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JP2015188070A (ja
JP2015188070A5 (enExample
Inventor
宮入　秀和
秀和 宮入
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication of JP2015188070A5 publication Critical patent/JP2015188070A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D87/00—Integrated devices comprising both bulk components and either SOI or SOS components on the same substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Dram (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Non-Volatile Memory (AREA)
  • Electroluminescent Light Sources (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
JP2015041939A 2014-03-07 2015-03-04 半導体装置 Active JP6545976B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2015041939A JP6545976B2 (ja) 2014-03-07 2015-03-04 半導体装置

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2014044473 2014-03-07
JP2014044473 2014-03-07
JP2014048727 2014-03-12
JP2014048727 2014-03-12
JP2015041939A JP6545976B2 (ja) 2014-03-07 2015-03-04 半導体装置

Related Child Applications (1)

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JP2019114529A Division JP6728452B2 (ja) 2014-03-07 2019-06-20 半導体装置

Publications (3)

Publication Number Publication Date
JP2015188070A JP2015188070A (ja) 2015-10-29
JP2015188070A5 JP2015188070A5 (enExample) 2018-04-12
JP6545976B2 true JP6545976B2 (ja) 2019-07-17

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JP2015041939A Active JP6545976B2 (ja) 2014-03-07 2015-03-04 半導体装置
JP2019114529A Expired - Fee Related JP6728452B2 (ja) 2014-03-07 2019-06-20 半導体装置
JP2020113923A Active JP7144483B2 (ja) 2014-03-07 2020-07-01 半導体装置
JP2022147109A Withdrawn JP2023002514A (ja) 2014-03-07 2022-09-15 半導体装置
JP2023199973A Active JP7650945B2 (ja) 2014-03-07 2023-11-27 半導体装置
JP2025039091A Pending JP2025090745A (ja) 2014-03-07 2025-03-12 半導体装置

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JP2020113923A Active JP7144483B2 (ja) 2014-03-07 2020-07-01 半導体装置
JP2022147109A Withdrawn JP2023002514A (ja) 2014-03-07 2022-09-15 半導体装置
JP2023199973A Active JP7650945B2 (ja) 2014-03-07 2023-11-27 半導体装置
JP2025039091A Pending JP2025090745A (ja) 2014-03-07 2025-03-12 半導体装置

Country Status (2)

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US (2) US9443872B2 (enExample)
JP (6) JP6545976B2 (enExample)

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JP6545976B2 (ja) * 2014-03-07 2019-07-17 株式会社半導体エネルギー研究所 半導体装置
US9716100B2 (en) * 2014-03-14 2017-07-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method for driving semiconductor device, and electronic device
US10104764B2 (en) * 2014-03-18 2018-10-16 Texas Instruments Incorporated Electronic device package with vertically integrated capacitors
WO2015182000A1 (en) 2014-05-30 2015-12-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method thereof, and electronic device
JP6417125B2 (ja) * 2014-06-25 2018-10-31 株式会社ジャパンディスプレイ 半導体装置
TWI553379B (zh) * 2014-06-25 2016-10-11 群創光電股份有限公司 顯示面板和應用其之顯示裝置
KR102346675B1 (ko) * 2014-10-31 2022-01-04 삼성디스플레이 주식회사 디스플레이 장치 및 그 제조 방법
US9564217B1 (en) 2015-10-19 2017-02-07 United Microelectronics Corp. Semiconductor memory device having integrated DOSRAM and NOSRAM
TWI721026B (zh) * 2015-10-30 2021-03-11 日商半導體能源研究所股份有限公司 電容器、半導體裝置、模組以及電子裝置的製造方法
JP6917700B2 (ja) 2015-12-02 2021-08-11 株式会社半導体エネルギー研究所 半導体装置
KR102462912B1 (ko) * 2015-12-04 2022-11-04 에스케이하이닉스 주식회사 수직 전송 게이트를 갖는 이미지 센서
JP6853663B2 (ja) * 2015-12-28 2021-03-31 株式会社半導体エネルギー研究所 半導体装置
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KR102626961B1 (ko) * 2016-07-27 2024-01-17 엘지디스플레이 주식회사 하이브리드 타입의 박막 트랜지스터 및 이를 이용한 유기발광 표시장치
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JP6698486B2 (ja) * 2016-09-26 2020-05-27 株式会社ジャパンディスプレイ 表示装置
KR102390447B1 (ko) * 2017-07-28 2022-04-26 삼성디스플레이 주식회사 표시장치용 기판, 유기발광표시장치 및 유기발광표시장치의 제조방법
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KR102630641B1 (ko) * 2018-01-25 2024-01-30 삼성디스플레이 주식회사 표시장치 및 그의 제조방법
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CN114038845A (zh) * 2021-11-30 2022-02-11 广东晶科电子股份有限公司 COB Mini LED显示模组及制作方法及显示屏
KR20240146020A (ko) * 2022-02-04 2024-10-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 기억 장치
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WO2024194726A1 (ja) * 2023-03-17 2024-09-26 株式会社半導体エネルギー研究所 半導体装置、及び、半導体装置の作製方法
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