JP6512314B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP6512314B2 JP6512314B2 JP2018000101A JP2018000101A JP6512314B2 JP 6512314 B2 JP6512314 B2 JP 6512314B2 JP 2018000101 A JP2018000101 A JP 2018000101A JP 2018000101 A JP2018000101 A JP 2018000101A JP 6512314 B2 JP6512314 B2 JP 6512314B2
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Description
図1は、本発明の実施の形態1にかかる製造途中の状態を工程順に示す断面図である。図2は、図1の製造工程をプロセスフローで示すフローチャートである。図1,2を用いて、実施の形態1にかかる半導体装置の製造方法について説明する。図1に示す実施の形態1にかかる半導体装置の製造方法により作製(製造)される半導体装置は、図1(h)に示すn型フィールドストップ(FS)層9を有するダイオード100である。まず、薄化されていない厚さの厚いn-型半導体基板20として、例えば、n型シリコン基板を準備する(図1(a))。
図8は、電子線照射ありおよび電子線照射なしにおけるキャリア濃度分布の相違を示す特性図である。図8(a)は、本発明の電子線照射あり(以下、実施例とする)と従来の電子線照射なし(以下、従来例1とする)とを比較した図である。図8(b)はいずれも電子線照射なしで、Rp2を0.5Rp1以上とした場合(以下、従来例2とする)と、Rp2を0.5Rp1よりも小さくした場合(従来例1)とを比較した図である。Rp1,Rp2は、プロトン注入の飛程であり、n-型半導体基板1の裏面1aからの平均飛程である。平均飛程とは、ガウス分布であらわされるn型FS層9の不純物濃度分布のピーク濃度位置の、基板裏面からの深さである。具体的には、平均飛程とは、基板裏面からプロトンピーク位置までの深さである。
図9は、実施の形態3にかかる半導体装置の製造工程をプロセスフローで示すフローチャートである。実施の形態3にかかる半導体装置の製造方法は、実施の形態1にかかる半導体装置の製造方法において、プロトン注入前後の工程順を変形した変形例である。実施の形態3にかかる半導体装置の製造方法が実施の形態1にかかる半導体装置の製造方法と異なる点は、n-型半導体基板の裏面研削後、プロトン注入前に、カソード層を形成するためのイオン注入と、レーザーアニールによるカソード層の活性化とを行う点である。実施の形態3にかかる半導体装置の製造方法のそれ以外の工程は、実施の形態1にかかる半導体装置の製造方法と同様である。
図10は、実施の形態4にかかる半導体装置の製造工程をプロセスフローで示すフローチャートである。実施の形態4にかかる半導体装置の製造方法が実施の形態3にかかる半導体装置の製造方法と異なる点は、レーザーアニールによるカソード層の活性化を、プロトン注入後に行うドナー生成のための熱処理とともに行う点である。すなわち、実施の形態4においては、カソード層を形成するためのイオン注入(図10(6))直後に、カソード層の活性化を目的とするレーザーアニールを行わずに、プロトン注入(図10(7))後の熱処理(図10(8))で、プロトンドナーの活性化と、カソード層の活性化とを同時に行う。実施の形態4にかかる半導体装置の製造方法のそれ以外の工程は、実施の形態3にかかる半導体装置の製造方法と同様である。
実施の形態1では、基板の深さ方向全体への点欠陥導入を電子線照射によって行っていた。一方、FZ基板のドーピング方法として、中性子線により核変換(Si→リン)を行うことで、低濃度で均一なドリフト層ドーピングをする方法が知られている。実施の形態5にかかる半導体装置の製造方法が実施の形態1にかかる半導体装置の製造方法と異なる点は、中性子線照射によって結晶欠陥42を発生させる点である。この中性子線照射によって生じた結晶欠陥42を、プロトンのドナー化を促進させるために用いる。
実施の形態2にかかる半導体装置の製造方法における複数回のプロトン照射における1段目のプロトンピーク位置の好ましい位置について、特に1段目の飛程Rp1が基板裏面から15μm以上深い位置であるのが好ましい理由を、以下、実施の形態6として説明する。
図20は、本発明にかかる半導体装置の逆回復波形を示す特性図である。図20には、実施の形態1に従って作製された本発明の逆回復波形と、プロトン注入を行わずに電子線照射のみとした比較例の逆回復波形とを示す。定格電圧は1200Vとした。FZ法によるシリコン基板を用い、そのドーピング濃度(平均濃度)Nd、および、研削後の仕上がり厚さW0を図18に示す定格電圧1200Vのときの値とした。本発明のγ(1段目の飛程Rp1に対応)は1である。本発明の電子線照射条件は、線量を300kGyとし、加速エネルギーを5MeVとした。比較例の電子線照射条件は、線量を60kGyとした。本発明および比較例ともに、定格電流密度(図18の1200Vの欄)における順電圧降下を1.8Vとした。試験条件は、電源電圧VCCが800Vであり、初期の定常的なアノード電流は定格電流(電流密度×活性面積(約1cm2))である。チョッパー回路においてダイオード、駆動用IGBT(同じ1200V)、中間コンデンサとの浮遊インダクタンスは、200nHである。
図19は、実施の形態8にかかる半導体装置を示す説明図である。実施の形態8にかかる半導体装置は、実施の形態1にかかる半導体装置の構成をIGBTに適用した例である。図19(a)にはIGBTの断面構造を示し、図19(b)には図19(a)のA−A’線上のネットドーピング濃度分布を示す。実施の形態8にかかる半導体装置の製造方法は、実施の形態1〜5にかかる半導体装置の製造方法においてダイオードの素子構造に代えてIGBTの素子構造を形成すればよい。
1a 薄いn-型半導体基板1の裏面
1b 薄いn-型半導体基板1のおもて面
2 p型アノード領域
3 n+型カソード層
4 耐圧接合終端構造
5 アノード電極
6 カソード電極
8 絶縁膜
9 n型フィールドストップ層
11 電子線照射
12 電子線照射11による結晶欠陥
13 プロトン注入
14 水素原子
15 プロトン注入13による結晶欠陥
18 ドナー層
20 厚いn-型半導体基板
20a 厚いn-型半導体基板20のおもて面
20b 厚いn-型半導体基板20の裏面
21 研削
100 ダイオード
Claims (13)
- 第1導電型のドリフト層が設けられた第1導電型の半導体基板と、
前記半導体基板の一方の主面側に設けられ、前記ドリフト層に隣接して、前記ドリフト層よりも高不純物濃度の第2導電型の第1半導体層と、
前記半導体基板の他方の主面側に設けられた、前記ドリフト層よりも高不純物濃度の第1導電型または第2導電型の第2半導体層と、
前記ドリフト層と前記第2半導体層との間に1つ以上設けられた、前記ドリフト層よりも高不純物濃度で、かつ水素誘起ドナーを有する第1導電型の高濃度層と、
を備え、
水素で終端されていない点欠陥が前記高濃度層の内部よりも前記ドリフト層の内部に多く存在することを特徴とする半導体装置。 - 前記高濃度層のキャリアライフタイムは、前記ドリフト層のキャリアライフタイムよりも長いことを特徴とする請求項1に記載の半導体装置。
- 前記ドリフト層の内部に存在する前記点欠陥は、空孔および複空孔であることを特徴とする請求項1または2に記載の半導体装置。
- 前記ドリフト層の内部に存在する前記点欠陥は、ヘリウムを含むことを特徴とする請求項1〜3のいずれか一つに記載の半導体装置。
- 前記高濃度層は、水素で終端されたダングリングボンドを有することを特徴とする請求項1〜4のいずれか一つに記載の半導体装置。
- 前記高濃度層は、前記ドリフト層よりも高不純物濃度の、水素誘起ドナーによるピーク濃度を1つ以上有する領域であることを特徴とする請求項1〜5のいずれか一つに記載の半導体装置。
- 前記高濃度層のキャリアライフタイムは、前記半導体基板の一方の主面側から他方の主面側へ向かって増加することを特徴とする請求項1〜6のいずれか一つに記載の半導体装置。
- 前記高濃度層の内部に、空孔と酸素と水素との複合欠陥が存在することを特徴とする請求項1〜7のいずれか一つに記載の半導体装置。
- 前記ドリフト層のキャリアライフタイムは深さ方向に一様であることを特徴とする請求項1〜8のいずれか一つに記載の半導体装置。
- 前記ドリフト層に最も近い前記高濃度層の水素誘起ドナーによるピーク濃度の深さ位置は、前記半導体基板の他方の主面から15μm以上の距離にあることを特徴とする請求項1〜9のいずれか一つに記載の半導体装置。
- 前記第2半導体層は第1導電型であり、
第1導電型はn型であり、第2導電型はp型であることを特徴とする請求項1〜11のいずれか一つに記載の半導体装置。 - 前記半導体基板の一方の主面側に、前記第1半導体層と接して設けられた、前記第1半導体層よりも高不純物濃度の第1導電型のエミッタ層と、
前記ドリフト層、前記第1半導体層および前記エミッタ層に接するゲート絶縁膜と、
前記ゲート絶縁膜を介して、前記ドリフト層、前記第1半導体層および前記エミッタ層と隣り合うゲート電極と、
をさらに備え、
前記第2半導体層は第2導電型であり、
第1導電型はn型であり、第2導電型はp型であることを特徴とする請求項1〜11のいずれか一つに記載の半導体装置。
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Families Citing this family (56)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5733417B2 (ja) | 2011-11-15 | 2015-06-10 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
EP2800143B1 (en) | 2011-12-28 | 2020-04-08 | Fuji Electric Co., Ltd. | Semiconductor device and method for producing semiconductor device |
DE112013002031T5 (de) * | 2012-08-22 | 2015-03-12 | Fuji Electric Co., Ltd. | Halbleitervorrichtung und Halbleitervorrichtungsherstellungsverfahren |
WO2014065080A1 (ja) * | 2012-10-23 | 2014-05-01 | 富士電機株式会社 | 半導体装置およびその製造方法 |
DE102012020785B4 (de) * | 2012-10-23 | 2014-11-06 | Infineon Technologies Ag | Erhöhung der Dotierungseffizienz bei Protonenbestrahlung |
KR102206507B1 (ko) * | 2013-06-26 | 2021-01-22 | 후지 덴키 가부시키가이샤 | 반도체 장치 및 반도체 장치의 제조 방법 |
CN105474364B (zh) * | 2013-07-26 | 2018-11-16 | 新南创新私人有限公司 | 硅中的高浓度掺杂 |
DE102013216195B4 (de) * | 2013-08-14 | 2015-10-29 | Infineon Technologies Ag | Verfahren zur Nachdotierung einer Halbleiterscheibe |
WO2015072210A1 (ja) * | 2013-11-13 | 2015-05-21 | 三菱電機株式会社 | 半導体装置の製造方法 |
JP6311723B2 (ja) * | 2013-12-16 | 2018-04-18 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
US9231091B2 (en) * | 2014-05-12 | 2016-01-05 | Infineon Technologies Ag | Semiconductor device and reverse conducting insulated gate bipolar transistor with isolated source zones |
US9754787B2 (en) * | 2014-06-24 | 2017-09-05 | Infineon Technologies Ag | Method for treating a semiconductor wafer |
JP6158153B2 (ja) * | 2014-09-19 | 2017-07-05 | 株式会社東芝 | 半導体装置及びその製造方法 |
WO2016051970A1 (ja) * | 2014-09-30 | 2016-04-07 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
DE112015000206T5 (de) * | 2014-10-03 | 2016-08-25 | Fuji Electric Co., Ltd. | Halbleitervorrichtung und Verfahren zum Herstellen einer Halbleitervorrichtung |
CN106463528B (zh) * | 2014-11-17 | 2019-10-11 | 富士电机株式会社 | 碳化硅半导体装置的制造方法 |
CN107710417B (zh) * | 2015-06-16 | 2021-06-11 | 三菱电机株式会社 | 半导体装置的制造方法 |
DE112016000170T5 (de) | 2015-06-17 | 2017-08-03 | Fuji Electric Co., Ltd. | Halbleitervorrichtung und Verfahren zur Hestellung einer Halbleitervorrichtung |
DE102015114177A1 (de) | 2015-08-26 | 2017-03-02 | Infineon Technologies Ag | Halbleitervorrichtung, Siliziumwafer und Verfahren zum Herstellen eines Siliziumwafers |
JP6564046B2 (ja) * | 2015-09-15 | 2019-08-21 | 株式会社日立製作所 | 半導体装置およびその製造方法、電力変換装置、3相モータシステム、自動車並びに鉄道車両 |
WO2017047285A1 (ja) * | 2015-09-16 | 2017-03-23 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
JP6428945B2 (ja) * | 2015-09-16 | 2018-11-28 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
US9960269B2 (en) * | 2016-02-02 | 2018-05-01 | Renesas Electronics Corporation | Semiconductor device and method of manufacturing the same |
CN107851584B (zh) | 2016-02-23 | 2021-06-11 | 富士电机株式会社 | 半导体装置 |
JP6846119B2 (ja) * | 2016-05-02 | 2021-03-24 | 株式会社 日立パワーデバイス | ダイオード、およびそれを用いた電力変換装置 |
CN108292605B (zh) * | 2016-06-24 | 2021-08-27 | 富士电机株式会社 | 半导体装置的制造方法和半导体装置 |
DE102016112139B3 (de) * | 2016-07-01 | 2018-01-04 | Infineon Technologies Ag | Verfahren zum Reduzieren einer Verunreinigungskonzentration in einem Halbleiterkörper |
DE102016112721B4 (de) | 2016-07-12 | 2022-02-03 | Infineon Technologies Ag | n-Kanal-Leistungshalbleitervorrichtung mit p-Schicht im Driftvolumen |
DE102016114264A1 (de) | 2016-08-02 | 2018-02-08 | Infineon Technologies Ag | Herstellungsverfahren einschliesslich einer aktivierung von dotierstoffen und halbleitervorrichtungen mit steilen übergängen |
DE102016118012A1 (de) * | 2016-09-23 | 2018-03-29 | Infineon Technologies Ag | Halbleiterbauelement und Verfahren zum Bilden eines Halbleiterbauelements |
WO2018074434A1 (ja) | 2016-10-17 | 2018-04-26 | 富士電機株式会社 | 半導体装置 |
JP6579086B2 (ja) * | 2016-11-15 | 2019-09-25 | 信越半導体株式会社 | デバイス形成方法 |
CN108447903B (zh) * | 2017-02-16 | 2023-07-04 | 富士电机株式会社 | 半导体装置 |
JP6789177B2 (ja) * | 2017-06-02 | 2020-11-25 | 株式会社東芝 | 半導体装置 |
US10193000B1 (en) * | 2017-07-31 | 2019-01-29 | Ixys, Llc | Fast recovery inverse diode |
JP6777046B2 (ja) * | 2017-08-22 | 2020-10-28 | 信越半導体株式会社 | 再結合ライフタイムの制御方法 |
JP7052322B2 (ja) * | 2017-11-28 | 2022-04-12 | 富士電機株式会社 | 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 |
JP6881292B2 (ja) | 2017-12-28 | 2021-06-02 | 信越半導体株式会社 | 再結合ライフタイムの制御方法 |
DE112019000094T5 (de) | 2018-03-19 | 2020-09-24 | Fuji Electric Co., Ltd. | Halbleitervorrichtung und verfahren zum herstellen einerhalbleitervorrichtung |
CN110504167A (zh) * | 2018-05-17 | 2019-11-26 | 上海先进半导体制造股份有限公司 | 绝缘栅双极型晶体管及其制造方法 |
JP7006517B2 (ja) | 2018-06-12 | 2022-01-24 | 信越半導体株式会社 | シリコン単結晶基板中の欠陥密度の制御方法 |
CN110660658B (zh) * | 2018-06-28 | 2022-02-18 | 上海先进半导体制造有限公司 | Vdmos及其制造方法 |
JP7243744B2 (ja) | 2019-01-18 | 2023-03-22 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
JP6702467B2 (ja) * | 2019-02-25 | 2020-06-03 | 三菱電機株式会社 | 半導体装置及びその製造方法 |
US11450734B2 (en) | 2019-06-17 | 2022-09-20 | Fuji Electric Co., Ltd. | Semiconductor device and fabrication method for semiconductor device |
JP7279806B2 (ja) * | 2019-10-11 | 2023-05-23 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
JP7222435B2 (ja) * | 2019-10-11 | 2023-02-15 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
DE112020001040T5 (de) | 2019-10-17 | 2021-12-23 | Fuji Electric Co., Ltd. | Halbleitervorrichtung und herstellungsverfahren einer halbleitervorrichtung |
JP7400834B2 (ja) * | 2019-12-18 | 2023-12-19 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
WO2021181644A1 (ja) * | 2020-03-13 | 2021-09-16 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
JP7257984B2 (ja) * | 2020-03-24 | 2023-04-14 | 株式会社東芝 | 半導体装置及びその製造方法 |
JP7456349B2 (ja) | 2020-10-08 | 2024-03-27 | 三菱電機株式会社 | 半導体装置および半導体装置の製造方法 |
JP2022073497A (ja) | 2020-11-02 | 2022-05-17 | 三菱電機株式会社 | 半導体装置および半導体装置の製造方法 |
JP2022092731A (ja) | 2020-12-11 | 2022-06-23 | 株式会社東芝 | 半導体装置 |
CN114999900B (zh) * | 2022-07-18 | 2023-08-08 | 浙江大学杭州国际科创中心 | 一种提高碳化硅晶圆中少数载流子寿命的方法 |
WO2024100926A1 (ja) * | 2022-11-08 | 2024-05-16 | 富士電機株式会社 | 半導体装置 |
Family Cites Families (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6100575A (en) * | 1987-08-19 | 2000-08-08 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor switching device having different carrier lifetimes between a first portion serving as a main current path and the remaining portion of the device |
JPH0642558B2 (ja) * | 1988-09-12 | 1994-06-01 | 東洋電機製造株式会社 | 高速ダイオードの製造方法 |
JPH08148699A (ja) * | 1994-11-21 | 1996-06-07 | Shindengen Electric Mfg Co Ltd | 整流ダイオ−ド |
JPH09232332A (ja) * | 1996-02-27 | 1997-09-05 | Fuji Electric Co Ltd | 半導体装置 |
JP4543457B2 (ja) * | 1999-10-28 | 2010-09-15 | 富士電機システムズ株式会社 | イオン注入用遮蔽マスクと半導体装置の製造方法 |
DE10055446B4 (de) * | 1999-11-26 | 2012-08-23 | Fuji Electric Co., Ltd. | Halbleiterbauelement und Verfahren zu seiner Herstellung |
US6482681B1 (en) * | 2000-05-05 | 2002-11-19 | International Rectifier Corporation | Hydrogen implant for buffer zone of punch-through non epi IGBT |
JP4539011B2 (ja) * | 2002-02-20 | 2010-09-08 | 富士電機システムズ株式会社 | 半導体装置 |
DE10223951B4 (de) | 2002-05-29 | 2009-09-24 | Infineon Technologies Ag | Hochvoltdiode mit optimiertem Abschaltverfahren und entsprechendes Optimierverfahren |
DE10349582B4 (de) | 2003-10-24 | 2008-09-25 | Infineon Technologies Ag | Halbleiterdiode sowie dafür geeignetes Herstellungsverfahren |
DE102004004045B4 (de) * | 2004-01-27 | 2009-04-02 | Infineon Technologies Ag | Halbleiterbauelement mit temporärem Feldstoppbereich und Verfahren zu dessen Herstellung |
DE102004047749B4 (de) | 2004-09-30 | 2008-12-04 | Infineon Technologies Austria Ag | Halbleiterbauteil Diode und IGBT sowie dafür geeignetes Herstellungsverfahren |
DE102005026408B3 (de) | 2005-06-08 | 2007-02-01 | Infineon Technologies Ag | Verfahren zur Herstellung einer Stoppzone in einem Halbleiterkörper und Halbleiterbauelement mit einer Stoppzone |
WO2007055352A1 (ja) | 2005-11-14 | 2007-05-18 | Fuji Electric Device Technology Co., Ltd. | 半導体装置およびその製造方法 |
ATE522927T1 (de) * | 2006-01-20 | 2011-09-15 | Infineon Technologies Austria | Verfahren zur herstellung einer n-dotierten zone in einem halbleiterwafer und halbleiterbauelement |
US7557386B2 (en) | 2006-03-30 | 2009-07-07 | Infineon Technologies Austria Ag | Reverse conducting IGBT with vertical carrier lifetime adjustment |
US7538412B2 (en) | 2006-06-30 | 2009-05-26 | Infineon Technologies Austria Ag | Semiconductor device with a field stop zone |
US7989888B2 (en) | 2006-08-31 | 2011-08-02 | Infineon Technologies Autria AG | Semiconductor device with a field stop zone and process of producing the same |
JP5396689B2 (ja) * | 2006-09-07 | 2014-01-22 | 富士電機株式会社 | 半導体装置およびその製造方法 |
JP5320679B2 (ja) * | 2007-02-28 | 2013-10-23 | 富士電機株式会社 | 半導体装置およびその製造方法 |
JP5203667B2 (ja) | 2007-10-16 | 2013-06-05 | トヨタ自動車株式会社 | 半導体装置の製造方法 |
JP5365009B2 (ja) * | 2008-01-23 | 2013-12-11 | 富士電機株式会社 | 半導体装置およびその製造方法 |
JP5374883B2 (ja) * | 2008-02-08 | 2013-12-25 | 富士電機株式会社 | 半導体装置およびその製造方法 |
DE102008049664B3 (de) * | 2008-09-30 | 2010-02-11 | Infineon Technologies Austria Ag | Verfahren zum Herstellen eines Halbleiterkörpers mit einem graduellen pn-Übergang |
JP5277882B2 (ja) * | 2008-11-12 | 2013-08-28 | 富士電機株式会社 | 半導体装置およびその製造方法 |
JP2010267863A (ja) * | 2009-05-15 | 2010-11-25 | Denso Corp | 半導体装置 |
JP5261324B2 (ja) * | 2009-08-26 | 2013-08-14 | トヨタ自動車株式会社 | 半導体装置とその製造方法 |
US8766413B2 (en) * | 2009-11-02 | 2014-07-01 | Fuji Electric Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
JP5156059B2 (ja) * | 2009-12-16 | 2013-03-06 | 株式会社豊田中央研究所 | ダイオードとその製造方法 |
JP5526811B2 (ja) | 2010-01-29 | 2014-06-18 | 富士電機株式会社 | 逆導通形絶縁ゲート型バイポーラトランジスタ |
EP2800143B1 (en) | 2011-12-28 | 2020-04-08 | Fuji Electric Co., Ltd. | Semiconductor device and method for producing semiconductor device |
DE102012020785B4 (de) | 2012-10-23 | 2014-11-06 | Infineon Technologies Ag | Erhöhung der Dotierungseffizienz bei Protonenbestrahlung |
US9312135B2 (en) | 2014-03-19 | 2016-04-12 | Infineon Technologies Ag | Method of manufacturing semiconductor devices including generating and annealing radiation-induced crystal defects |
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US9276071B2 (en) | 2016-03-01 |
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US20160163786A1 (en) | 2016-06-09 |
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