JP6789177B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP6789177B2 JP6789177B2 JP2017110049A JP2017110049A JP6789177B2 JP 6789177 B2 JP6789177 B2 JP 6789177B2 JP 2017110049 A JP2017110049 A JP 2017110049A JP 2017110049 A JP2017110049 A JP 2017110049A JP 6789177 B2 JP6789177 B2 JP 6789177B2
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- silicon layer
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- 239000004065 semiconductor Substances 0.000 title claims description 53
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 60
- 229910052710 silicon Inorganic materials 0.000 claims description 60
- 239000010703 silicon Substances 0.000 claims description 60
- 239000000758 substrate Substances 0.000 claims description 18
- 239000001307 helium Substances 0.000 claims description 13
- 229910052734 helium Inorganic materials 0.000 claims description 13
- 239000001257 hydrogen Substances 0.000 claims description 10
- 229910052739 hydrogen Inorganic materials 0.000 claims description 10
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 7
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 5
- 230000007547 defect Effects 0.000 description 34
- 239000012535 impurity Substances 0.000 description 27
- -1 hydrogen ions Chemical class 0.000 description 11
- 238000011084 recovery Methods 0.000 description 11
- 150000002500 ions Chemical class 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 238000000137 annealing Methods 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 230000003111 delayed effect Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 230000002040 relaxant effect Effects 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 108091006146 Channels Proteins 0.000 description 2
- 102000004129 N-Type Calcium Channels Human genes 0.000 description 2
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- 238000001004 secondary ion mass spectrometry Methods 0.000 description 2
- 230000008719 thickening Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
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- 239000002019 doping agent Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
- H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
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- Thin Film Transistor (AREA)
Description
図1(b)は、図1(a)におけるA−A断面図である。
図2(b)は、図2(a)におけるB−B断面図である。
図3(b)は、図3(a)におけるC−C断面図である。
Claims (4)
- 基板と、
前記基板上に設けられた絶縁層と、
前記絶縁層上に設けられた第1導電型の第1シリコン層と、
前記第1シリコン層の表面に設けられた第1導電型の第1半導体領域と、
前記第1半導体領域に対して離間して、前記第1シリコン層の表面に設けられた第2導電型または第1導電型の第2半導体領域と、
前記第1半導体領域に接続された第1電極と、
前記第2半導体領域に接続された第2電極と、
を備え、
前記第1シリコン層における前記絶縁層との境界付近の底部の水素濃度は、前記第1シリコン層における前記底部よりも上の部分の水素濃度よりも高く、
前記第1シリコン層における前記底部の抵抗率は、前記第1シリコン層における前記底部よりも上の前記部分の抵抗率よりも低い半導体装置。 - 基板と、
前記基板上に設けられた絶縁層と、
前記絶縁層上に設けられた第1導電型の第1シリコン層と、
前記第1シリコン層の表面に設けられた第1導電型の第1半導体領域と、
前記第1半導体領域に対して離間して、前記第1シリコン層の表面に設けられた第2導電型または第1導電型の第2半導体領域と、
前記第1半導体領域に接続された第1電極と、
前記第2半導体領域に接続された第2電極と、
を備え、
前記第1シリコン層における前記絶縁層との境界付近の底部のヘリウム濃度は、前記第1シリコン層における前記底部よりも上の部分のヘリウム濃度よりも高く、
前記第1シリコン層における前記底部の抵抗率は、前記第1シリコン層における前記底部よりも上の前記部分の抵抗率よりも低い半導体装置。 - 前記第1半導体領域と前記第1シリコン層との間に設けられた第2導電型の第1ベース領域と、
前記第1ベース領域の上に設けられた第1ゲート電極と、
前記第1ベース領域と前記第1ゲート電極との間に設けられた第1ゲート絶縁膜と、
をさらに備えた請求項1または2に記載の半導体装置。 - 前記絶縁層上に設けられた第2シリコン層と、
前記第1シリコン層と前記第2シリコン層との間に設けられた絶縁膜と、
前記第2シリコン層内に設けられた第2ベース領域と、
前記第2ベース領域の表面に設けられたドレイン領域と、
前記ドレイン領域に対して離間して、前記第2ベース領域の表面に設けられたソース領域と、
前記ドレイン領域と前記ソース領域との間における前記第2ベース領域上に設けられた第2ゲート電極と、
前記第2ベース領域と前記第2ゲート電極との間に設けられた第2ゲート絶縁膜と、
をさらに備えた請求項1〜3のいずれか1つに記載の半導体装置。
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CN201710755006.3A CN108987348B (zh) | 2017-06-02 | 2017-08-29 | 半导体装置及其制造方法 |
US15/830,682 US10304924B2 (en) | 2017-06-02 | 2017-12-04 | Semiconductor device and method for manufacturing same |
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JP2564935B2 (ja) | 1989-04-20 | 1996-12-18 | 三菱電機株式会社 | 半導体装置 |
JPH08181321A (ja) * | 1994-12-26 | 1996-07-12 | Matsushita Electric Works Ltd | Soi基板及びその製造方法 |
JP3781452B2 (ja) | 1995-03-30 | 2006-05-31 | 株式会社東芝 | 誘電体分離半導体装置およびその製造方法 |
JPH09121052A (ja) * | 1995-08-21 | 1997-05-06 | Fuji Electric Co Ltd | 半導体装置およびその製造方法 |
JP3427609B2 (ja) * | 1996-02-27 | 2003-07-22 | 富士電機株式会社 | 半導体装置の製造方法 |
JPH09270513A (ja) | 1996-03-29 | 1997-10-14 | Toyota Central Res & Dev Lab Inc | 絶縁ゲート型半導体装置およびその製造方法 |
US6150697A (en) * | 1998-04-30 | 2000-11-21 | Denso Corporation | Semiconductor apparatus having high withstand voltage |
JPH1174492A (ja) | 1998-07-13 | 1999-03-16 | Toshiba Corp | 半導体基板の製造方法 |
JP4862207B2 (ja) * | 1999-11-26 | 2012-01-25 | 富士電機株式会社 | 半導体装置の製造方法 |
JP4269454B2 (ja) * | 1999-12-22 | 2009-05-27 | パナソニック電工株式会社 | 半導体装置およびその製造方法 |
JP4616856B2 (ja) * | 2007-03-27 | 2011-01-19 | 株式会社日立製作所 | 半導体装置、及び半導体装置の製造方法 |
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JP2010147239A (ja) * | 2008-12-18 | 2010-07-01 | Toshiba Corp | 半導体装置及びその製造方法 |
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JP5434961B2 (ja) * | 2010-08-04 | 2014-03-05 | 株式会社デンソー | 横型ダイオードを有する半導体装置 |
JP2012124474A (ja) * | 2010-11-15 | 2012-06-28 | Denso Corp | 横型素子を有する半導体装置 |
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CN108987348A (zh) | 2018-12-11 |
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