JP2018206916A - 半導体装置及びその製造方法 - Google Patents
半導体装置及びその製造方法 Download PDFInfo
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- JP2018206916A JP2018206916A JP2017110049A JP2017110049A JP2018206916A JP 2018206916 A JP2018206916 A JP 2018206916A JP 2017110049 A JP2017110049 A JP 2017110049A JP 2017110049 A JP2017110049 A JP 2017110049A JP 2018206916 A JP2018206916 A JP 2018206916A
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Abstract
【解決手段】第1シリコン層における絶縁層との境界付近の底部の水素濃度は、第1シリコン層における底部よりも上の部分の水素濃度よりも高く、第1シリコン層における底部の抵抗率は、第1シリコン層における底部よりも上の部分の抵抗率よりも低い。
【選択図】図1
Description
図1(b)は、図1(a)におけるA−A断面図である。
図2(b)は、図2(a)におけるB−B断面図である。
図3(b)は、図3(a)におけるC−C断面図である。
Claims (6)
- 基板と、
前記基板上に設けられた絶縁層と、
前記絶縁層上に設けられた第1導電型の第1シリコン層と、
前記第1シリコン層の表面に設けられた第1導電型の第1半導体領域と、
前記第1半導体領域に対して離間して、前記第1シリコン層の表面に設けられた第2導電型または第1導電型の第2半導体領域と、
前記第1半導体領域に接続された第1電極と、
前記第2半導体領域に接続された第2電極と、
を備え、
前記第1シリコン層における前記絶縁層との境界付近の底部の水素濃度は、前記第1シリコン層における前記底部よりも上の部分の水素濃度よりも高く、
前記第1シリコン層における前記底部の抵抗率は、前記第1シリコン層における前記底部よりも上の前記部分の抵抗率よりも低い半導体装置。 - 基板と、
前記基板上に設けられた絶縁層と、
前記絶縁層上に設けられた第1導電型の第1シリコン層と、
前記第1シリコン層の表面に設けられた第1導電型の第1半導体領域と、
前記第1半導体領域に対して離間して、前記第1シリコン層の表面に設けられた第2導電型または第1導電型の第2半導体領域と、
前記第1半導体領域に接続された第1電極と、
前記第2半導体領域に接続された第2電極と、
を備え、
前記第1シリコン層における前記絶縁層との境界付近の底部のヘリウム濃度は、前記第1シリコン層における前記底部よりも上の部分のヘリウム濃度よりも高く、
前記第1シリコン層における前記底部の抵抗率は、前記第1シリコン層における前記底部よりも上の前記部分の抵抗率よりも低い半導体装置。 - 前記第1半導体領域と前記第1シリコン層との間に設けられた第2導電型の第1ベース領域と、
前記第1ベース領域の上に設けられた第1ゲート電極と、
前記第1ベース領域と前記第1ゲート電極との間に設けられた第1ゲート絶縁膜と、
をさらに備えた請求項1または2に記載の半導体装置。 - 前記絶縁層上に設けられた第2シリコン層と、
前記第1シリコン層と前記第2シリコン層との間に設けられた絶縁膜と、
前記第2シリコン層内に設けられた第2ベース領域と、
前記第2ベース領域の表面に設けられたドレイン領域と、
前記ドレイン領域に対して離間して、前記第2ベース領域の表面に設けられたソース領域と、
前記ドレイン領域と前記ソース領域との間における前記第2ベース領域上に設けられた第2ゲート電極と、
前記第2ベース領域と前記第2ゲート電極との間に設けられた第2ゲート絶縁膜と、
をさらに備えた請求項1〜3のいずれか1つに記載の半導体装置。 - 基板と、
前記基板上に設けられた絶縁層と、
前記絶縁層上に設けられた第1導電型のシリコン層と、
前記シリコン層の表面に設けられた第1導電型の第1半導体領域と、
前記第1半導体領域に対して離間して、前記シリコン層の表面に設けられた第2導電型または第1導電型の第2半導体領域と、
前記第1半導体領域上に接続された第1電極と、
前記第2半導体領域に接続された第2電極と、
を有するウェーハにおける前記シリコン層の底部に対して、前記シリコン層の表面側から水素イオンまたはヘリウムイオンを照射する工程と、
前記水素イオンまたはヘリウムイオンを照射した後、アニールする工程と、
を備えた半導体装置の製造方法。 - 前記アニールの温度は、400℃より低い請求項5記載の半導体装置の製造方法。
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Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08181321A (ja) * | 1994-12-26 | 1996-07-12 | Matsushita Electric Works Ltd | Soi基板及びその製造方法 |
JPH09121052A (ja) * | 1995-08-21 | 1997-05-06 | Fuji Electric Co Ltd | 半導体装置およびその製造方法 |
JPH09232326A (ja) * | 1996-02-27 | 1997-09-05 | Fuji Electric Co Ltd | 半導体装置の製造方法 |
JP2001156299A (ja) * | 1999-11-26 | 2001-06-08 | Fuji Electric Co Ltd | 半導体装置及びその製造方法 |
JP2001185728A (ja) * | 1999-12-22 | 2001-07-06 | Matsushita Electric Works Ltd | 半導体装置およびその製造方法 |
JP2010147239A (ja) * | 2008-12-18 | 2010-07-01 | Toshiba Corp | 半導体装置及びその製造方法 |
JP2011156299A (ja) * | 2010-02-03 | 2011-08-18 | Sammy Corp | スロットマシン |
JP2012023165A (ja) * | 2010-07-14 | 2012-02-02 | Hitachi Ltd | 半導体装置及びその製造方法 |
JP2014086600A (ja) * | 2012-10-24 | 2014-05-12 | Fuji Electric Co Ltd | 半導体装置、半導体装置の製造方法および半導体装置の制御方法 |
JP2015130524A (ja) * | 2011-12-28 | 2015-07-16 | 富士電機株式会社 | 半導体装置 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2564935B2 (ja) | 1989-04-20 | 1996-12-18 | 三菱電機株式会社 | 半導体装置 |
JP3781452B2 (ja) | 1995-03-30 | 2006-05-31 | 株式会社東芝 | 誘電体分離半導体装置およびその製造方法 |
JPH09270513A (ja) | 1996-03-29 | 1997-10-14 | Toyota Central Res & Dev Lab Inc | 絶縁ゲート型半導体装置およびその製造方法 |
US6150697A (en) * | 1998-04-30 | 2000-11-21 | Denso Corporation | Semiconductor apparatus having high withstand voltage |
JPH1174492A (ja) | 1998-07-13 | 1999-03-16 | Toshiba Corp | 半導体基板の製造方法 |
JP4616856B2 (ja) * | 2007-03-27 | 2011-01-19 | 株式会社日立製作所 | 半導体装置、及び半導体装置の製造方法 |
JP5515248B2 (ja) * | 2008-03-26 | 2014-06-11 | 富士電機株式会社 | 半導体装置 |
JP5636848B2 (ja) * | 2010-05-26 | 2014-12-10 | 株式会社デンソー | 横型の絶縁ゲート型バイポーラトランジスタ |
JP5434961B2 (ja) * | 2010-08-04 | 2014-03-05 | 株式会社デンソー | 横型ダイオードを有する半導体装置 |
JP2012124474A (ja) * | 2010-11-15 | 2012-06-28 | Denso Corp | 横型素子を有する半導体装置 |
US20150171220A1 (en) * | 2012-05-28 | 2015-06-18 | Sharp Kabushiki Kaisha | Semiconductor device and method for manufacturing same |
JP2014212252A (ja) * | 2013-04-19 | 2014-11-13 | 株式会社東芝 | 半導体装置 |
US9543379B2 (en) * | 2014-03-18 | 2017-01-10 | Nxp Usa, Inc. | Semiconductor device with peripheral breakdown protection |
-
2017
- 2017-06-02 JP JP2017110049A patent/JP6789177B2/ja active Active
- 2017-08-29 CN CN201710755006.3A patent/CN108987348B/zh active Active
- 2017-12-04 US US15/830,682 patent/US10304924B2/en active Active
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08181321A (ja) * | 1994-12-26 | 1996-07-12 | Matsushita Electric Works Ltd | Soi基板及びその製造方法 |
JPH09121052A (ja) * | 1995-08-21 | 1997-05-06 | Fuji Electric Co Ltd | 半導体装置およびその製造方法 |
JPH09232326A (ja) * | 1996-02-27 | 1997-09-05 | Fuji Electric Co Ltd | 半導体装置の製造方法 |
JP2001156299A (ja) * | 1999-11-26 | 2001-06-08 | Fuji Electric Co Ltd | 半導体装置及びその製造方法 |
JP2001185728A (ja) * | 1999-12-22 | 2001-07-06 | Matsushita Electric Works Ltd | 半導体装置およびその製造方法 |
JP2010147239A (ja) * | 2008-12-18 | 2010-07-01 | Toshiba Corp | 半導体装置及びその製造方法 |
JP2011156299A (ja) * | 2010-02-03 | 2011-08-18 | Sammy Corp | スロットマシン |
JP2012023165A (ja) * | 2010-07-14 | 2012-02-02 | Hitachi Ltd | 半導体装置及びその製造方法 |
JP2015130524A (ja) * | 2011-12-28 | 2015-07-16 | 富士電機株式会社 | 半導体装置 |
JP2014086600A (ja) * | 2012-10-24 | 2014-05-12 | Fuji Electric Co Ltd | 半導体装置、半導体装置の製造方法および半導体装置の制御方法 |
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