JP6489973B2 - 研削装置 - Google Patents

研削装置 Download PDF

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Publication number
JP6489973B2
JP6489973B2 JP2015150535A JP2015150535A JP6489973B2 JP 6489973 B2 JP6489973 B2 JP 6489973B2 JP 2015150535 A JP2015150535 A JP 2015150535A JP 2015150535 A JP2015150535 A JP 2015150535A JP 6489973 B2 JP6489973 B2 JP 6489973B2
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JP
Japan
Prior art keywords
grinding
current value
frequency power
ultrasonic
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2015150535A
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English (en)
Japanese (ja)
Other versions
JP2017030071A (ja
Inventor
井上　雄貴
雄貴 井上
俊洙 禹
俊洙 禹
渡辺　真也
真也 渡辺
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Disco Corp
Original Assignee
Disco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Disco Corp filed Critical Disco Corp
Priority to JP2015150535A priority Critical patent/JP6489973B2/ja
Priority to TW105119571A priority patent/TWI694896B/zh
Priority to KR1020160087998A priority patent/KR102343159B1/ko
Priority to CN201610603424.6A priority patent/CN106392886B/zh
Publication of JP2017030071A publication Critical patent/JP2017030071A/ja
Application granted granted Critical
Publication of JP6489973B2 publication Critical patent/JP6489973B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/34—Accessories
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
    • B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02013—Grinding, lapping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
    • H01L21/449—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428 involving the application of mechanical vibrations, e.g. ultrasonic vibrations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
  • Grinding Of Cylindrical And Plane Surfaces (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
JP2015150535A 2015-07-30 2015-07-30 研削装置 Active JP6489973B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2015150535A JP6489973B2 (ja) 2015-07-30 2015-07-30 研削装置
TW105119571A TWI694896B (zh) 2015-07-30 2016-06-22 研磨裝置
KR1020160087998A KR102343159B1 (ko) 2015-07-30 2016-07-12 연삭 장치
CN201610603424.6A CN106392886B (zh) 2015-07-30 2016-07-28 磨削装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015150535A JP6489973B2 (ja) 2015-07-30 2015-07-30 研削装置

Publications (2)

Publication Number Publication Date
JP2017030071A JP2017030071A (ja) 2017-02-09
JP6489973B2 true JP6489973B2 (ja) 2019-03-27

Family

ID=57985696

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015150535A Active JP6489973B2 (ja) 2015-07-30 2015-07-30 研削装置

Country Status (4)

Country Link
JP (1) JP6489973B2 (zh)
KR (1) KR102343159B1 (zh)
CN (1) CN106392886B (zh)
TW (1) TWI694896B (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7012454B2 (ja) * 2017-04-27 2022-01-28 株式会社岡本工作機械製作所 静電吸着チャックの製造方法並びに半導体装置の製造方法
JP6506797B2 (ja) * 2017-06-09 2019-04-24 Ｔｏｗａ株式会社 研削装置および研削方法
JP7045212B2 (ja) * 2018-02-08 2022-03-31 株式会社ディスコ 研削装置
JP7032217B2 (ja) * 2018-04-05 2022-03-08 株式会社ディスコ 研磨装置
JP7299773B2 (ja) * 2019-07-09 2023-06-28 株式会社ディスコ 研削装置

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6025653A (ja) * 1983-07-20 1985-02-08 Hitachi Ltd 研削砥石のドレツシング方法
JPH0577161A (ja) * 1991-03-13 1993-03-30 Mitsubishi Materials Corp 研削盤のドレツシング装置
JP3305732B2 (ja) * 1991-05-28 2002-07-24 日立ビアメカニクス株式会社 平面研削盤の制御方法
JPH0557610A (ja) * 1991-08-27 1993-03-09 Toshiba Mach Co Ltd 研削加工方法
EP0576937B1 (en) * 1992-06-19 1996-11-20 Rikagaku Kenkyusho Apparatus for mirror surface grinding
JP2000117630A (ja) * 1998-10-12 2000-04-25 Tokyo Seimitsu Co Ltd ウェーハ面取り装置のドレッシング工具及びそのドレッシング工具を用いたウェーハ面取り装置のドレッシング機構
JP2001096461A (ja) * 1999-09-29 2001-04-10 Disco Abrasive Syst Ltd 研削砥石の目立て方法及び目立て装置
JP2001113455A (ja) * 1999-10-14 2001-04-24 Sony Corp 化学的機械研磨装置及び方法
JP2001328069A (ja) * 2000-05-24 2001-11-27 Ebara Corp 研磨装置のドレッサー洗浄方法及び装置
TW492065B (en) * 2001-07-20 2002-06-21 United Microelectronics Corp Structure of polishing pad conditioner and method of use
DE60320227T2 (de) * 2002-02-20 2009-05-20 Ebara Corp. Verfahren und einrichtung zum polieren
CN102513920B (zh) * 2004-11-01 2016-04-27 株式会社荏原制作所 抛光设备
JP2006281341A (ja) * 2005-03-31 2006-10-19 Matsushita Electric Ind Co Ltd 研削装置
TW200734120A (en) * 2005-12-06 2007-09-16 Disco Corp Polishing grindstone and method for producing same
JP5254539B2 (ja) * 2006-08-09 2013-08-07 株式会社ディスコ ウエーハ研削装置
JP2009094326A (ja) * 2007-10-10 2009-04-30 Disco Abrasive Syst Ltd ウェーハの研削方法
JP5165458B2 (ja) * 2008-05-23 2013-03-21 オリンパス株式会社 芯取加工方法および芯取加工装置
JP5527622B2 (ja) * 2009-06-04 2014-06-18 旭硝子株式会社 板状体の研磨方法
JP5550940B2 (ja) * 2010-02-23 2014-07-16 株式会社ディスコ 搬送機構
JP2011189456A (ja) 2010-03-15 2011-09-29 Disco Corp 研削装置及び研削方法
US8920214B2 (en) * 2011-07-12 2014-12-30 Chien-Min Sung Dual dressing system for CMP pads and associated methods
JP5856433B2 (ja) * 2011-10-21 2016-02-09 株式会社ディスコ サファイア基板の研削方法
JP2013123792A (ja) * 2011-12-16 2013-06-24 Fujitsu Ltd 半導体装置の製造方法及び研削装置
JP6239354B2 (ja) * 2012-12-04 2017-11-29 不二越機械工業株式会社 ウェーハ研磨装置
JP6166974B2 (ja) * 2013-07-22 2017-07-19 株式会社ディスコ 研削装置
CN103921213B (zh) * 2014-03-14 2017-01-04 河南理工大学 多点超声波振动cbn砂轮修整装置
CN104440559A (zh) * 2014-11-24 2015-03-25 河南理工大学 一种超硬磨料砂轮超声激光复合修整装置

Also Published As

Publication number Publication date
JP2017030071A (ja) 2017-02-09
CN106392886B (zh) 2020-03-17
KR102343159B1 (ko) 2021-12-23
TW201713460A (zh) 2017-04-16
KR20170015150A (ko) 2017-02-08
CN106392886A (zh) 2017-02-15
TWI694896B (zh) 2020-06-01

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