KR102343159B1 - 연삭 장치 - Google Patents

연삭 장치 Download PDF

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Publication number
KR102343159B1
KR102343159B1 KR1020160087998A KR20160087998A KR102343159B1 KR 102343159 B1 KR102343159 B1 KR 102343159B1 KR 1020160087998 A KR1020160087998 A KR 1020160087998A KR 20160087998 A KR20160087998 A KR 20160087998A KR 102343159 B1 KR102343159 B1 KR 102343159B1
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KR
South Korea
Prior art keywords
grinding
current value
frequency power
ultrasonic
wafer
Prior art date
Application number
KR1020160087998A
Other languages
English (en)
Korean (ko)
Other versions
KR20170015150A (ko
Inventor
유키 이노우에
준수 우
신야 와타나베
Original Assignee
가부시기가이샤 디스코
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Application filed by 가부시기가이샤 디스코 filed Critical 가부시기가이샤 디스코
Publication of KR20170015150A publication Critical patent/KR20170015150A/ko
Application granted granted Critical
Publication of KR102343159B1 publication Critical patent/KR102343159B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/34—Accessories
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
    • B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02013—Grinding, lapping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
    • H01L21/449—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428 involving the application of mechanical vibrations, e.g. ultrasonic vibrations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
  • Grinding Of Cylindrical And Plane Surfaces (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
KR1020160087998A 2015-07-30 2016-07-12 연삭 장치 KR102343159B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2015-150535 2015-07-30
JP2015150535A JP6489973B2 (ja) 2015-07-30 2015-07-30 研削装置

Publications (2)

Publication Number Publication Date
KR20170015150A KR20170015150A (ko) 2017-02-08
KR102343159B1 true KR102343159B1 (ko) 2021-12-23

Family

ID=57985696

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020160087998A KR102343159B1 (ko) 2015-07-30 2016-07-12 연삭 장치

Country Status (4)

Country Link
JP (1) JP6489973B2 (zh)
KR (1) KR102343159B1 (zh)
CN (1) CN106392886B (zh)
TW (1) TWI694896B (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7012454B2 (ja) * 2017-04-27 2022-01-28 株式会社岡本工作機械製作所 静電吸着チャックの製造方法並びに半導体装置の製造方法
JP6506797B2 (ja) * 2017-06-09 2019-04-24 Ｔｏｗａ株式会社 研削装置および研削方法
JP7045212B2 (ja) * 2018-02-08 2022-03-31 株式会社ディスコ 研削装置
JP7032217B2 (ja) * 2018-04-05 2022-03-08 株式会社ディスコ 研磨装置
JP7299773B2 (ja) * 2019-07-09 2023-06-28 株式会社ディスコ 研削装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001096461A (ja) 1999-09-29 2001-04-10 Disco Abrasive Syst Ltd 研削砥石の目立て方法及び目立て装置
JP2009279710A (ja) 2008-05-23 2009-12-03 Olympus Corp 芯取加工方法および芯取加工装置

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JPS6025653A (ja) * 1983-07-20 1985-02-08 Hitachi Ltd 研削砥石のドレツシング方法
JPH0577161A (ja) * 1991-03-13 1993-03-30 Mitsubishi Materials Corp 研削盤のドレツシング装置
JP3305732B2 (ja) * 1991-05-28 2002-07-24 日立ビアメカニクス株式会社 平面研削盤の制御方法
JPH0557610A (ja) * 1991-08-27 1993-03-09 Toshiba Mach Co Ltd 研削加工方法
EP0576937B1 (en) * 1992-06-19 1996-11-20 Rikagaku Kenkyusho Apparatus for mirror surface grinding
JP2000117630A (ja) * 1998-10-12 2000-04-25 Tokyo Seimitsu Co Ltd ウェーハ面取り装置のドレッシング工具及びそのドレッシング工具を用いたウェーハ面取り装置のドレッシング機構
JP2001113455A (ja) * 1999-10-14 2001-04-24 Sony Corp 化学的機械研磨装置及び方法
JP2001328069A (ja) * 2000-05-24 2001-11-27 Ebara Corp 研磨装置のドレッサー洗浄方法及び装置
TW492065B (en) * 2001-07-20 2002-06-21 United Microelectronics Corp Structure of polishing pad conditioner and method of use
DE60320227T2 (de) * 2002-02-20 2009-05-20 Ebara Corp. Verfahren und einrichtung zum polieren
CN102513920B (zh) * 2004-11-01 2016-04-27 株式会社荏原制作所 抛光设备
JP2006281341A (ja) * 2005-03-31 2006-10-19 Matsushita Electric Ind Co Ltd 研削装置
TW200734120A (en) * 2005-12-06 2007-09-16 Disco Corp Polishing grindstone and method for producing same
JP5254539B2 (ja) * 2006-08-09 2013-08-07 株式会社ディスコ ウエーハ研削装置
JP2009094326A (ja) * 2007-10-10 2009-04-30 Disco Abrasive Syst Ltd ウェーハの研削方法
JP5527622B2 (ja) * 2009-06-04 2014-06-18 旭硝子株式会社 板状体の研磨方法
JP5550940B2 (ja) * 2010-02-23 2014-07-16 株式会社ディスコ 搬送機構
JP2011189456A (ja) 2010-03-15 2011-09-29 Disco Corp 研削装置及び研削方法
US8920214B2 (en) * 2011-07-12 2014-12-30 Chien-Min Sung Dual dressing system for CMP pads and associated methods
JP5856433B2 (ja) * 2011-10-21 2016-02-09 株式会社ディスコ サファイア基板の研削方法
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JP6166974B2 (ja) * 2013-07-22 2017-07-19 株式会社ディスコ 研削装置
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Publication number Priority date Publication date Assignee Title
JP2001096461A (ja) 1999-09-29 2001-04-10 Disco Abrasive Syst Ltd 研削砥石の目立て方法及び目立て装置
JP2009279710A (ja) 2008-05-23 2009-12-03 Olympus Corp 芯取加工方法および芯取加工装置

Also Published As

Publication number Publication date
JP6489973B2 (ja) 2019-03-27
JP2017030071A (ja) 2017-02-09
CN106392886B (zh) 2020-03-17
TW201713460A (zh) 2017-04-16
KR20170015150A (ko) 2017-02-08
CN106392886A (zh) 2017-02-15
TWI694896B (zh) 2020-06-01

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