JP6474625B2 - 半導体装置の作製方法 - Google Patents
半導体装置の作製方法 Download PDFInfo
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- JP6474625B2 JP6474625B2 JP2015015863A JP2015015863A JP6474625B2 JP 6474625 B2 JP6474625 B2 JP 6474625B2 JP 2015015863 A JP2015015863 A JP 2015015863A JP 2015015863 A JP2015015863 A JP 2015015863A JP 6474625 B2 JP6474625 B2 JP 6474625B2
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- semiconductor
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- conductor
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- insulator
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- 239000004065 semiconductor Substances 0.000 title claims description 471
- 238000000034 method Methods 0.000 title claims description 86
- 238000004519 manufacturing process Methods 0.000 title claims description 30
- 239000004020 conductor Substances 0.000 claims description 244
- 239000012212 insulator Substances 0.000 claims description 193
- 229910052710 silicon Inorganic materials 0.000 claims description 51
- 239000010703 silicon Substances 0.000 claims description 51
- 229910052721 tungsten Inorganic materials 0.000 claims description 30
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 29
- 239000010937 tungsten Substances 0.000 claims description 29
- 230000006870 function Effects 0.000 claims description 26
- 229910052782 aluminium Inorganic materials 0.000 claims description 24
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 24
- 239000010936 titanium Substances 0.000 claims description 22
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 21
- 229910052719 titanium Inorganic materials 0.000 claims description 21
- 230000015572 biosynthetic process Effects 0.000 claims description 15
- 238000005229 chemical vapour deposition Methods 0.000 claims description 12
- 239000000758 substrate Substances 0.000 description 92
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 66
- 229910052760 oxygen Inorganic materials 0.000 description 66
- 239000001301 oxygen Substances 0.000 description 66
- 239000013078 crystal Substances 0.000 description 58
- 239000012535 impurity Substances 0.000 description 53
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 52
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 48
- 239000010410 layer Substances 0.000 description 45
- 239000003990 capacitor Substances 0.000 description 42
- 239000000523 sample Substances 0.000 description 39
- 125000004429 atom Chemical group 0.000 description 35
- 239000007789 gas Substances 0.000 description 35
- 229910052739 hydrogen Inorganic materials 0.000 description 24
- 239000004973 liquid crystal related substance Substances 0.000 description 24
- 229910052757 nitrogen Inorganic materials 0.000 description 24
- 239000008188 pellet Substances 0.000 description 24
- 239000001257 hydrogen Substances 0.000 description 23
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 22
- 229910052802 copper Inorganic materials 0.000 description 22
- 239000010949 copper Substances 0.000 description 22
- 238000005530 etching Methods 0.000 description 21
- 229910052738 indium Inorganic materials 0.000 description 21
- 210000004027 cell Anatomy 0.000 description 20
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 18
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 18
- 238000002173 high-resolution transmission electron microscopy Methods 0.000 description 17
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 16
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 16
- 229910052796 boron Inorganic materials 0.000 description 16
- 229910052733 gallium Inorganic materials 0.000 description 16
- 150000002500 ions Chemical class 0.000 description 16
- 229910052727 yttrium Inorganic materials 0.000 description 16
- 239000011701 zinc Substances 0.000 description 16
- 238000004458 analytical method Methods 0.000 description 15
- 238000006722 reduction reaction Methods 0.000 description 15
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 15
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 14
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 14
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 14
- 229910052698 phosphorus Inorganic materials 0.000 description 14
- 239000011574 phosphorus Substances 0.000 description 14
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 13
- 229910052715 tantalum Inorganic materials 0.000 description 13
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 13
- 229910052726 zirconium Inorganic materials 0.000 description 13
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 12
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 12
- 229910052731 fluorine Inorganic materials 0.000 description 12
- 239000011737 fluorine Substances 0.000 description 12
- 239000000203 mixture Substances 0.000 description 12
- 230000003071 parasitic effect Effects 0.000 description 12
- 239000002356 single layer Substances 0.000 description 12
- 238000003860 storage Methods 0.000 description 12
- 229910052718 tin Inorganic materials 0.000 description 12
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 11
- 238000010586 diagram Methods 0.000 description 11
- 229910052732 germanium Inorganic materials 0.000 description 11
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 11
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 10
- 125000004430 oxygen atom Chemical group O* 0.000 description 10
- 239000011347 resin Substances 0.000 description 10
- 229920005989 resin Polymers 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 229910052799 carbon Inorganic materials 0.000 description 9
- 229910052735 hafnium Inorganic materials 0.000 description 9
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 9
- 229910052779 Neodymium Inorganic materials 0.000 description 8
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 8
- 229910052786 argon Inorganic materials 0.000 description 8
- 238000004891 communication Methods 0.000 description 8
- 229910052746 lanthanum Inorganic materials 0.000 description 8
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 8
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 8
- 229910052814 silicon oxide Inorganic materials 0.000 description 8
- 229910052725 zinc Inorganic materials 0.000 description 8
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 7
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 7
- 229910045601 alloy Inorganic materials 0.000 description 7
- 239000000956 alloy Substances 0.000 description 7
- 230000000903 blocking effect Effects 0.000 description 7
- 229910052801 chlorine Inorganic materials 0.000 description 7
- 239000000460 chlorine Substances 0.000 description 7
- 230000007547 defect Effects 0.000 description 7
- 229910052749 magnesium Inorganic materials 0.000 description 7
- 239000011777 magnesium Substances 0.000 description 7
- 229910052759 nickel Inorganic materials 0.000 description 7
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- 230000008859 change Effects 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 238000002003 electron diffraction Methods 0.000 description 6
- 238000005468 ion implantation Methods 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- 229910052750 molybdenum Inorganic materials 0.000 description 6
- 239000011733 molybdenum Substances 0.000 description 6
- 239000002159 nanocrystal Substances 0.000 description 6
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 229910052709 silver Inorganic materials 0.000 description 6
- 239000004332 silver Substances 0.000 description 6
- 238000012916 structural analysis Methods 0.000 description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 5
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- 229910052804 chromium Inorganic materials 0.000 description 5
- 239000011651 chromium Substances 0.000 description 5
- 229910017052 cobalt Inorganic materials 0.000 description 5
- 239000010941 cobalt Substances 0.000 description 5
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 5
- 230000005669 field effect Effects 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 150000002431 hydrogen Chemical class 0.000 description 5
- 229910052707 ruthenium Inorganic materials 0.000 description 5
- 239000011800 void material Substances 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 4
- 230000001186 cumulative effect Effects 0.000 description 4
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 4
- 238000010894 electron beam technology Methods 0.000 description 4
- 229910001195 gallium oxide Inorganic materials 0.000 description 4
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 239000000047 product Substances 0.000 description 4
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 3
- OUUQCZGPVNCOIJ-UHFFFAOYSA-M Superoxide Chemical compound [O-][O] OUUQCZGPVNCOIJ-UHFFFAOYSA-M 0.000 description 3
- 238000003917 TEM image Methods 0.000 description 3
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 3
- 230000009471 action Effects 0.000 description 3
- 238000012937 correction Methods 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 238000007667 floating Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000004549 pulsed laser deposition Methods 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 229910001233 yttria-stabilized zirconia Inorganic materials 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 102100040844 Dual specificity protein kinase CLK2 Human genes 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 101000749291 Homo sapiens Dual specificity protein kinase CLK2 Proteins 0.000 description 2
- 239000004952 Polyamide Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 2
- 230000004075 alteration Effects 0.000 description 2
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 description 2
- 239000004760 aramid Substances 0.000 description 2
- 229920003235 aromatic polyamide Polymers 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- HJXBDPDUCXORKZ-UHFFFAOYSA-N diethylalumane Chemical compound CC[AlH]CC HJXBDPDUCXORKZ-UHFFFAOYSA-N 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 229940079593 drug Drugs 0.000 description 2
- 239000003814 drug Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000005674 electromagnetic induction Effects 0.000 description 2
- 238000002524 electron diffraction data Methods 0.000 description 2
- 238000010893 electron trap Methods 0.000 description 2
- 230000005281 excited state Effects 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 235000013305 food Nutrition 0.000 description 2
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 150000002894 organic compounds Chemical class 0.000 description 2
- 230000001151 other effect Effects 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 229910052696 pnictogen Inorganic materials 0.000 description 2
- 229920002647 polyamide Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 238000005001 rutherford backscattering spectroscopy Methods 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910052723 transition metal Inorganic materials 0.000 description 2
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 210000002925 A-like Anatomy 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 102100040862 Dual specificity protein kinase CLK1 Human genes 0.000 description 1
- 101000749294 Homo sapiens Dual specificity protein kinase CLK1 Proteins 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 241001465754 Metazoa Species 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910007541 Zn O Inorganic materials 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052795 boron group element Inorganic materials 0.000 description 1
- 239000011449 brick Substances 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910052800 carbon group element Inorganic materials 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 230000008014 freezing Effects 0.000 description 1
- 238000007710 freezing Methods 0.000 description 1
- YZZNJYQZJKSEER-UHFFFAOYSA-N gallium tin Chemical compound [Ga].[Sn] YZZNJYQZJKSEER-UHFFFAOYSA-N 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229940127554 medical product Drugs 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- KYKLWYKWCAYAJY-UHFFFAOYSA-N oxotin;zinc Chemical compound [Zn].[Sn]=O KYKLWYKWCAYAJY-UHFFFAOYSA-N 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000010079 rubber tapping Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000010454 slate Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910002076 stabilized zirconia Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000010897 surface acoustic wave method Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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Description
本発明の一態様は、半導体と、第1の導電体と、第2の導電体と、第3の導電体と、絶縁体と、を有し、半導体が、第1の導電体と接する第1の領域と、第2の導電体と接する第2の領域と、絶縁体と接する第3の領域と、を有し、第3の導電体が、絶縁体を介して第3の導電体と半導体とが互いに重なる領域を有し、第1の領域と、第3の領域と、が互いに重ならず、第2の領域と、第3の領域と、が互いに重ならない半導体装置の作製方法であって、第1の導電体を第1の領域上に選択成長させ、第2の導電体を第2の領域上に選択成長させる。
本発明の一態様は、第1の絶縁体上に半導体を形成し、半導体上に第2の絶縁体を形成し、第2の絶縁体上に第1の導電体を形成し、第1の導電体の一部をエッチングすることで、第2の絶縁体を介して半導体と重なる領域を有する第2の導電体を形成し、第2の絶縁体の一部をエッチングすることで、第2の導電体と重なる領域に第3の絶縁体を形成し、第2の導電体をマスクとして、半導体に不純物を加え、半導体上および第2の導電体上に第4の絶縁体を形成し、第4の絶縁体を異方性エッチングすることで、第2の導電体の側面に接する領域を有する第5の絶縁体を形成し、異方性エッチングとともに第2の絶縁体の露出した領域をエッチングし、異方性エッチングとともに第1の絶縁体の露出した領域をエッチングすることで、第1の絶縁体に厚さの小さい領域を形成し、半導体の不純物の加えられた領域のうち、露出された領域上に導電体を選択成長させる。
本発明の一態様は、第1の絶縁体上に半導体を形成し、半導体上に第2の絶縁体を形成し、第2の絶縁体上に第1の導電体を形成し、第1の導電体の一部をエッチングすることで、第2の絶縁体を介して半導体と重なる領域を有する第2の導電体を形成し、第2の絶縁体上および第2の導電体上に第3の絶縁体を形成し、第2の導電体をマスクとして、半導体に不純物を加えた後、第3の絶縁体上に第4の絶縁体を形成し、第3の絶縁体および第4の絶縁体を異方性エッチングすることで、第2の導電体の側面に接する領域を有する第5の絶縁体を形成し、異方性エッチングとともに第2の絶縁体の露出した領域をエッチングし、異方性エッチングとともに第1の絶縁体の露出した領域をエッチングすることで、第1の絶縁体に厚さの小さい領域を形成し、半導体の不純物の加えられた領域のうち、露出された領域上に導電体を選択成長させる。
本発明の一態様は、不純物は、イオン注入法により加えられる(2)または(3)に記載の半導体装置の作製方法である。
本発明の一態様は、不純物は、クラスタイオンを用いたイオン注入法により加えられる(2)または(3)に記載の半導体装置の作製方法である。
本発明の一態様は、不純物がシリコンを有し、導電体の選択成長は、タングステンを有するガスを用いた化学気相成長法により行う(2)乃至(5)のいずれか一に記載の半導体装置の作製方法である。
本発明の一態様は、タングステンを有するガスは、六フッ化タングステンガスと、モノシランガスと、を有する(6)に記載の半導体装置の作製方法である。
本発明の一態様は、不純物がチタンを有し、導電体の選択成長は、アルミニウムを有するガスを用いた化学気相成長法により行う(2)乃至(5)のいずれか一に記載の半導体装置の作製方法である。
本発明の一態様は、アルミニウムを有するガスは、ジエチルアルミニウムハイドライドガスを有する(8)に記載の半導体装置の作製方法である。
以下では、本発明の一態様に係る導電体の選択成長について図1を用いて説明する。
以下では、本発明の一態様に係るトランジスタおよびその作製方法について説明する。なお、トランジスタの作製方法は、チャネル長方向(A1−A2断面)およびチャネル幅方向(A3−A4断面)を用いて説明する。
以下では、酸化物半導体の構造について説明する。
まずは、CAAC−OSについて説明する。
次に、nc−OSについて説明する。
a−like OSは、nc−OSと非晶質酸化物半導体との間の構造を有する酸化物半導体である。
次に、上述したトランジスタとは、異なる構造を有するトランジスタおよびその作製方法について説明する。なお、トランジスタの作製方法は、チャネル長方向(B1−B2断面)およびチャネル幅方向(B3−B4断面)を用いて説明する。
以下では、本発明の一態様に係る半導体装置を例示する。
以下では、上述したトランジスタ、または記憶装置を含むRFタグについて、図19を用いて説明する。
以下では、本発明の一態様に係るRFタグの使用例について図20を用いて説明する。RFタグの用途は広範にわたるが、例えば、紙幣、硬貨、有価証券類、無記名債券類、証書類(運転免許証や住民票等、図20(A)参照。)、包装用容器類(包装紙やボトル等、図20(C)参照。)、記録媒体(DVDやビデオテープ等、図20(B)参照。)、乗り物類(自転車等、図20(D)参照。)、身の回り品(鞄や眼鏡等)、食品類、植物類、動物類、人体、衣類、生活用品類、薬品や薬剤を含む医療品、または電子機器(液晶表示装置、EL表示装置、テレビジョン装置、または携帯電話)等の物品、もしくは各物品に取り付ける荷札(図20(E)および図20(F)参照。)等に設けて使用することができる。
以下では、上述したトランジスタや上述した記憶装置などの半導体装置を含むCPUについて説明する。
以下では、本発明の一態様に係る表示装置の構成例について説明する。
図23(A)には、本発明の一態様に係る表示装置の上面図を示す。また、図23(B)には、本発明の一態様に係る表示装置の画素に液晶素子を用いた場合における画素回路を示す。また、図23(C)には、本発明の一態様に係る表示装置の画素に有機EL素子を用いた場合における画素回路を示す。
また、画素の回路構成の一例を図23(B)に示す。ここでは、VA型液晶表示装置の画素などに適用することができる画素回路を示す。
画素の回路構成の他の一例を図23(C)に示す。ここでは、有機EL素子を用いた表示装置の画素構造を示す。
以下では、本発明の一態様に係る半導体装置を適用した表示モジュールについて、図24を用いて説明を行う。
本発明の一態様に係る半導体装置は、表示機器、パーソナルコンピュータ、記録媒体を備えた画像再生装置(代表的にはDVD:Digital Versatile Disc等の記録媒体を再生し、その画像を表示しうるディスプレイを有する装置)に用いることができる。その他に、本発明の一態様に係る半導体装置を用いることができる電子機器として、携帯電話、携帯型を含むゲーム機、携帯データ端末、電子書籍端末、ビデオカメラ、デジタルスチルカメラ等のカメラ、ゴーグル型ディスプレイ(ヘッドマウントディスプレイ)、ナビゲーションシステム、音響再生装置(カーオーディオ、デジタルオーディオプレイヤー等)、複写機、ファクシミリ、プリンタ、プリンタ複合機、現金自動預け入れ払い機(ATM)、自動販売機などが挙げられる。これら電子機器の具体例を図25に示す。
以下では、本発明の一態様に係る電子機器の一例である表示領域または発光領域に曲面を有する電子機器について、図26を参照しながら説明する。なお、ここでは、電子機器の一例として、情報機器、特に携帯性を有する情報機器(携帯機器)について説明する。携帯性を有する情報機器としては、例えば、携帯電話機(ファブレット、スマートフォン(スマホ))、タブレット端末(スレートPC)なども含まれる。
携帯機器1300Aは、例えば電話、電子メール作成閲覧、手帳または情報閲覧などの機能から選ばれた一つまたは複数の機能を有する。
102 マスク
104 領域
106 導電体
150 不純物
400 基板
402 絶縁体
404 導電体
405a 導電体
405b 導電体
406 半導体
406a 半導体
406b 半導体
406c 半導体
410a 絶縁体
410b 絶縁体
412 絶縁体
412a 絶縁体
412b 絶縁体
413 導電体
415 導電体
416a 導電体
416b 導電体
416c 導電体
418 絶縁体
424a 導電体
424b 導電体
434 導電体
442 絶縁体
450 不純物
454 領域
500 基板
502 絶縁体
504 導電体
505a 導電体
505b 導電体
506 半導体
506a 半導体
506b 半導体
506c 半導体
508 絶縁体
510 絶縁体
512 絶縁体
512a 絶縁体
512b 絶縁体
513 導電体
515 導電体
516a 導電体
516b 導電体
516c 導電体
518 絶縁体
520 絶縁体
524a 導電体
524b 導電体
534 導電体
542 絶縁体
550 不純物
554 領域
800 RFタグ
801 通信器
802 アンテナ
803 無線信号
804 アンテナ
805 整流回路
806 定電圧回路
807 復調回路
808 変調回路
809 論理回路
810 記憶回路
811 ROM
901 筐体
902 筐体
903 表示部
904 表示部
905 マイクロフォン
906 スピーカー
907 操作キー
908 スタイラス
911 筐体
912 筐体
913 表示部
914 表示部
915 接続部
916 操作キー
921 筐体
922 表示部
923 キーボード
924 ポインティングデバイス
931 筐体
932 冷蔵室用扉
933 冷凍室用扉
941 筐体
942 筐体
943 表示部
944 操作キー
945 レンズ
946 接続部
951 車体
952 車輪
953 ダッシュボード
954 ライト
1189 ROMインターフェース
1190 基板
1191 ALU
1192 ALUコントローラ
1193 インストラクションデコーダ
1194 インタラプトコントローラ
1195 タイミングコントローラ
1196 レジスタ
1197 レジスタコントローラ
1198 バスインターフェース
1199 ROM
1200 記憶素子
1201 回路
1202 回路
1203 スイッチ
1204 スイッチ
1206 論理素子
1207 容量素子
1208 容量素子
1209 トランジスタ
1210 トランジスタ
1213 トランジスタ
1214 トランジスタ
1220 回路
1300A 携帯機器
1300B 携帯機器
1300C 携帯機器
1310 筐体
1311 領域
1312 領域
2100 トランジスタ
2200 トランジスタ
2201 絶縁体
2202 導電体
2203 導電体
2204 絶縁体
2205 導電体
2207 絶縁体
2211 半導体基板
2212 絶縁体
2213 ゲート電極
2214 ゲート絶縁体
2215 ドレイン領域
3001 配線
3002 配線
3003 配線
3004 配線
3005 配線
3200 トランジスタ
3300 トランジスタ
3400 容量素子
4000 RFタグ
5000 基板
5001 画素部
5002 走査線駆動回路
5003 走査線駆動回路
5004 信号線駆動回路
5010 容量配線
5012 ゲート配線
5013 ゲート配線
5014 ドレイン電極
5016 トランジスタ
5017 トランジスタ
5018 液晶素子
5019 液晶素子
5020 画素
5021 スイッチング用トランジスタ
5022 駆動用トランジスタ
5023 容量素子
5024 発光素子
5025 信号線
5026 走査線
5027 電源線
5028 共通電極
5100 ペレット
5120 基板
5161 領域
8000 表示モジュール
8001 上部カバー
8002 下部カバー
8003 FPC
8004 タッチパネル
8005 FPC
8006 セル
8007 バックライトユニット
8008 光源
8009 フレーム
8010 プリント基板
8011 バッテリー
Claims (3)
- 第1の絶縁体上に、第1の領域と、第2の領域と、前記第1の領域と前記第2の領域の間の第3の領域と、を有する酸化物半導体を形成する工程と、
第2の絶縁体を介して前記第3の領域と重なる領域を有する第1の導電体を形成する工程と、
前記第1の導電体の側面及び前記第2の絶縁体の側面に接する第3の絶縁体と、前記酸化物半導体の側面に接する領域を有する第4の絶縁体と、を形成する工程と、
前記第1の領域上に第2の導電体を選択的に成長させる工程と、を有し、
前記第3の領域は、トランジスタのチャネル形成領域として機能し、
前記第1の絶縁体は、前記酸化物半導体と重ならない領域において、前記第3の領域と重なる領域よりも膜厚の小さい部分を有し、
前記第1の絶縁体の前記部分は、前記トランジスタのチャネル長方向において、前記第3の絶縁体と接する領域を有さず、且つ前記第4の絶縁体と接する領域を有さない、半導体装置の作製方法。 - 請求項1において、
前記第1の領域及び前記第2の領域は、シリコンを有し、
前記第2の導電体は、タングステンを有するガスを用いた化学気相成長法により形成する、半導体装置の作製方法。 - 請求項1において、
前記第1の領域及び前記第3の領域は、チタンを有し、
前記第2の導電体は、アルミニウムを有するガスを用いた化学気相成長法により形成する、半導体装置の作製方法。
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KR20150091021A (ko) | 2015-08-07 |
US9929044B2 (en) | 2018-03-27 |
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