JP6423110B2 - 半導体超接合パワーデバイス及びその製造方法 - Google Patents
半導体超接合パワーデバイス及びその製造方法 Download PDFInfo
- Publication number
- JP6423110B2 JP6423110B2 JP2017553301A JP2017553301A JP6423110B2 JP 6423110 B2 JP6423110 B2 JP 6423110B2 JP 2017553301 A JP2017553301 A JP 2017553301A JP 2017553301 A JP2017553301 A JP 2017553301A JP 6423110 B2 JP6423110 B2 JP 6423110B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- doping
- power device
- layer
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims description 61
- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 210000000746 body region Anatomy 0.000 claims description 56
- 239000000758 substrate Substances 0.000 claims description 45
- 238000000034 method Methods 0.000 claims description 26
- 230000008569 process Effects 0.000 claims description 15
- 238000005530 etching Methods 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 11
- 229920005591 polysilicon Polymers 0.000 claims description 11
- 238000005468 ion implantation Methods 0.000 claims description 10
- 238000000206 photolithography Methods 0.000 claims description 10
- 239000012535 impurity Substances 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 230000005669 field effect Effects 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 3
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 3
- 239000011810 insulating material Substances 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- OUUQCZGPVNCOIJ-UHFFFAOYSA-M Superoxide Chemical compound [O-][O] OUUQCZGPVNCOIJ-UHFFFAOYSA-M 0.000 claims 1
- 230000008859 change Effects 0.000 description 14
- 238000010586 diagram Methods 0.000 description 10
- 230000000875 corresponding effect Effects 0.000 description 5
- 230000010355 oscillation Effects 0.000 description 5
- 230000003071 parasitic effect Effects 0.000 description 3
- 239000005380 borophosphosilicate glass Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000002079 cooperative effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000005360 phosphosilicate glass Substances 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/063—Reduced surface field [RESURF] pn-junction structures
- H01L29/0634—Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0638—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layer, e.g. with channel stopper
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7811—Vertical DMOS transistors, i.e. VDMOS transistors with an edge termination structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7831—Field effect transistors with field effect produced by an insulated gate with multiple gate structure
- H01L29/7832—Field effect transistors with field effect produced by an insulated gate with multiple gate structure the structure comprising a MOS gate and at least one non-MOS gate, e.g. JFET or MESFET gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13062—Junction field-effect transistor [JFET]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Composite Materials (AREA)
- Manufacturing & Machinery (AREA)
- Junction Field-Effect Transistors (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Description
第1ドーピングタイプの基板エピタキシャル層をエッチングし、基板エピタキシャル層内に凹んだ、基板エピタキシャル層における不純物と電荷のバランスをとるための第2ドーピングタイプの柱状エピタキシャルドーピング領域を形成するステップ1と、
前記柱状エピタキシャルドーピング領域の頂部に、対応する柱状エピタキシャルドーピング領域の両側を超えて前記基板エピタキシャル層内まで延出し、2種以上の異なる幅を有する第2ドーピングタイプのボディ領域を形成するステップ2と、
前記ボディ領域と基板エピタキシャル層との上にゲート酸化層を形成し、当該ゲート酸化層の上にポリシリコン誘電体層を形成するステップ3と、
前記ポリシリコン誘電体層とゲート酸化層をエッチングし、エッチング後に残ったポリシリコン誘電体層によりゲート電極を形成するステップ4と、
ソース領域を得るためのフォトリソグラフィプロセスを行った後に、第1ドーピングタイプのイオン注入を行い、前記ボディ領域内にソース領域を形成するステップ5と、
絶縁誘電体層を成膜し、前記絶縁誘電体層をエッチングすることにより接触孔を形成した後に、金属層を成膜し、前記金属層をエッチングすることによりソース領域の電極接触体とゲート電極の電極接触体を形成するステップ6と、
前記基板エピタキシャル層内に第1ドーピングタイプのドレイン領域を形成し、金属層を成膜してドレイン領域の電極接触体を形成するステップ7との基本的なステップを含む。
まず、本発明に係る半導体超接合パワーデバイスのセル領域内において、2種以上の異なる幅を有するボディ領域構造を使用することにより、超接合パワーデバイスのオン・オフ時のゲート−ドレイン間容量の急変速度を低減して、超接合パワーデバイスのゲート電圧の振動を低減することができる。
次に、本発明に係る半導体超接合パワーデバイスは、不均一な間隔を有する柱状エピタキシャルドーピング領域構造と、異なる幅を有するボディ領域構造との協働作用を利用して、ゲート−ドレイン間容量の急変がより滑らかになるように、超接合パワーデバイスにより多くの緩変を導入でき、ゲート電圧の振動を更に低減する。
更に、本発明に係る半導体超接合パワーデバイスは、チップ内部でゲート抵抗を容易に集積化し、ゲート電圧の振動を更に抑制することができる。
Claims (13)
- 終端領域及びセル領域を含み、前記セル領域は、基板エピタキシャル層内のドレイン領域、少なくとも3つの柱状エピタキシャルドーピング領域、各前記柱状エピタキシャルドーピング領域の頂部にそれぞれ設置されたボディ領域、及び各隣り合う2つの前記ボディ領域間に位置する接合型電界効果トランジスタJFET領域を含む半導体超接合パワーデバイスであって、
前記ボディ領域は、2種以上の異なる幅を有し、前記ボディ領域内にソース領域が設けられ、前記ボディ領域と前記JFET領域との上にゲート酸化層が設けられ、前記ゲート酸化層の上にゲート電極が設けられており、
前記少なくとも3つの柱状エピタキシャルドーピング領域における各前記柱状エピタキシャルドーピング領域の幅が等しく、且つ隣り合う前記柱状エピタキシャルドーピング領域間の間隔が等しく、且つ前記JFET領域は2種以上の異なる幅を有している、ことを特徴とする半導体超接合パワーデバイス。 - 前記ボディ領域の幅は、C、C+1D、C、C+1D、C、…と順次設定され、又はC、C+1D、…、C+nD、C+(n−1)D、…、C、C+1D、…、C+nD、C+(n−1)D、…、C、…と順次設定され、又はC、C、…、C+1D、C+1D、…、C+nD、C+nD、…、C+(n−1)D、C+(n−1)D、…、C、C、…と順次設定され、その中、n≧2である、ことを特徴とする請求項1に記載の半導体超接合パワーデバイス。
- 前記ゲート電極は、チャネル領域及び前記JFET領域をカバーするフルゲート型ゲート電極である、ことを特徴とする請求項1に記載の半導体超接合パワーデバイス。
- 前記ゲート電極は、チャネル領域を超えるようにカバーするとともに、前記JFET領域の上で切断されたスプリットゲート型ゲート電極である、ことを特徴とする請求項1に記載の半導体超接合パワーデバイス。
- 前記JFET領域の上における前記ゲート電極と前記ゲート酸化層との間に、フィールド酸化層が設けられ、当該フィールド酸化層の厚さが、前記ゲート酸化層の厚さの2〜10倍である、ことを特徴とする請求項1に記載の半導体超接合パワーデバイス。
- 前記基板エピタキシャル層、前記ドレイン領域及び前記ソース領域は、それぞれ第1ドーピングタイプを有し、前記柱状エピタキシャルドーピング領域及び前記ボディ領域は、それぞれ第2ドーピングタイプを有する、ことを特徴とする請求項1に記載の半導体超接合パワーデバイス。
- 前記第1ドーピングタイプは、n型ドーピングであり、前記第2ドーピングタイプは、p型ドーピングである、ことを特徴とする請求項6に記載の半導体超接合パワーデバイス。
- 前記第1ドーピングタイプは、p型ドーピングであり、前記第2ドーピングタイプは、n型ドーピングである、ことを特徴とする請求項6に記載の半導体超接合パワーデバイス。
- 前記ボディ領域と前記基板エピタキシャル層との上に、ゲート抵抗が設けられ、当該ゲート抵抗と、前記ボディ領域及び前記基板エピタキシャル層との間に誘電体層が設けられ、前記ゲート電極は、前記ゲート抵抗を介して外部回路に接続されている、ことを特徴とする請求項1に記載の半導体超接合パワーデバイス。
- 第1ドーピングタイプの基板エピタキシャル層をエッチングし、前記基板エピタキシャル層内に凹んだ、前記基板エピタキシャル層における不純物と電荷のバランスをとるための第2ドーピングタイプの少なくとも3つの柱状エピタキシャルドーピング領域を形成するステップ1と、
前記少なくとも3つの柱状エピタキシャルドーピング領域における各前記柱状エピタキシャルドーピング領域の頂部に、対応する前記柱状エピタキシャルドーピング領域の両側を超えて前記基板エピタキシャル層内まで延出し、2種以上の異なる幅を有する前記第2ドーピングタイプのボディ領域を形成し、隣り合う前記ボディ領域間の領域に接合型電界効果トランジスタJFET領域を形成し、前記少なくとも3つの柱状エピタキシャルドーピング領域における各前記柱状エピタキシャルドーピング領域の幅が等しく、且つ隣り合う前記柱状エピタキシャルドーピング領域間の間隔が等しく、前記JFET領域は2種以上の異なる幅を有しているステップ2と、
前記ボディ領域と前記基板エピタキシャル層との上にゲート酸化層を形成し、当該ゲート酸化層の上にポリシリコン誘電体層を形成するステップ3と、
前記ポリシリコン誘電体層と前記ゲート酸化層をエッチングし、エッチング後に残った前記ポリシリコン誘電体層によりゲート電極を形成するステップ4と、
ソース領域を得るためのフォトリソグラフィプロセスを行った後に、前記第1ドーピングタイプのイオン注入を行い、前記ボディ領域内に前記ソース領域を形成するステップ5と、
絶縁誘電体層を成膜し、前記絶縁誘電体層をエッチングすることにより接触孔を形成した後に、金属層を成膜し、前記金属層をエッチングすることにより前記ソース領域の電極接触体と前記ゲート電極の電極接触体を形成するステップ6と、
前記基板エピタキシャル層内に前記第1ドーピングタイプのドレイン領域を形成し、前記金属層を成膜して前記ドレイン領域の電極接触体を形成するステップ7との基本的なステップを含む、
ことを特徴とする半導体超接合パワーデバイスの製造方法。 - ステップ3において、前記ゲート酸化層の材質は、酸化シリコン、窒化シリコン、酸窒化シリコン、酸化ハフニウム又は高誘電率を有する他の絶縁材料である、ことを特徴とする請求項10に記載の半導体超接合パワーデバイスの製造方法。
- ステップ4において、前記ポリシリコン誘電体層をエッチングして前記ゲート電極を形成すると同時に、前記ボディ領域と前記基板エピタキシャル層との上に位置するゲート抵抗を形成する、ことを特徴とする請求項10に記載の半導体超接合パワーデバイスの製造方法。
- ステップ5において、前記ソース領域を得るのにフォトリソグラフィプロセスを行う前に、低濃度の前記第1ドーピングタイプのイオン注入を自己整合的に行っておく、ことを特徴とする請求項10に記載の半導体超接合パワーデバイスの製造方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201510217569.8A CN104952928A (zh) | 2015-04-30 | 2015-04-30 | 一种栅漏电容缓变的超结功率器件及其制造方法 |
CN201510217569.8 | 2015-04-30 | ||
CN201610104097.XA CN107123674A (zh) | 2016-02-25 | 2016-02-25 | 一种半导体超结功率器件 |
CN201610104097.X | 2016-02-25 | ||
PCT/CN2016/078831 WO2016173394A1 (zh) | 2015-04-30 | 2016-04-08 | 一种半导体超级结功率器件及其制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018505566A JP2018505566A (ja) | 2018-02-22 |
JP6423110B2 true JP6423110B2 (ja) | 2018-11-14 |
Family
ID=57198139
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017553301A Active JP6423110B2 (ja) | 2015-04-30 | 2016-04-08 | 半導体超接合パワーデバイス及びその製造方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US10411116B2 (ja) |
JP (1) | JP6423110B2 (ja) |
KR (1) | KR101962834B1 (ja) |
CN (1) | CN107408574B (ja) |
DE (1) | DE112016001988B4 (ja) |
WO (1) | WO2016173394A1 (ja) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107393923B (zh) * | 2017-06-27 | 2020-06-23 | 苏州美天网络科技有限公司 | 开关性能稳定的功率器件 |
CN107256865B (zh) * | 2017-06-27 | 2020-06-19 | 苏州美天网络科技有限公司 | 低损耗半导体功率器件 |
CN107369683B (zh) * | 2017-06-27 | 2020-06-23 | 苏州美天网络科技有限公司 | 抗电磁干扰的功率器件 |
US11069772B2 (en) | 2018-12-14 | 2021-07-20 | General Electric Company | Techniques for fabricating planar charge balanced (CB) metal-oxide-semiconductor field-effect transistor (MOSFET) devices |
CN110176499B (zh) * | 2019-05-06 | 2022-06-24 | 上海功成半导体科技有限公司 | 超结mos器件结构及其制备方法 |
KR102153550B1 (ko) * | 2019-05-08 | 2020-09-08 | 현대오트론 주식회사 | 전력 반도체 소자 |
CN110400833A (zh) * | 2019-07-30 | 2019-11-01 | 上海昱率科技有限公司 | 超结功率器件及其制造方法 |
CN110310983B (zh) * | 2019-07-31 | 2024-02-23 | 电子科技大学 | 一种超结vdmos器件 |
KR102315055B1 (ko) * | 2020-05-22 | 2021-10-21 | 현대모비스 주식회사 | 전력 반도체 소자 및 그 제조 방법 |
CN113206146B (zh) * | 2021-05-26 | 2023-03-24 | 吉林华微电子股份有限公司 | 半导体器件终端结构、制造方法及半导体器件 |
CN113990757B (zh) * | 2021-10-27 | 2024-03-26 | 电子科技大学 | 一种mos器件结构及制造方法 |
CN116137283A (zh) | 2021-11-17 | 2023-05-19 | 苏州东微半导体股份有限公司 | 半导体超结功率器件 |
CN116031303B (zh) * | 2023-02-09 | 2023-11-21 | 上海功成半导体科技有限公司 | 超结器件及其制作方法和电子器件 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3731523B2 (ja) * | 2001-10-17 | 2006-01-05 | 富士電機デバイステクノロジー株式会社 | 半導体素子 |
JP2003243653A (ja) * | 2002-02-19 | 2003-08-29 | Nissan Motor Co Ltd | 炭化珪素半導体装置の製造方法 |
JP2005332886A (ja) * | 2004-05-18 | 2005-12-02 | Toshiba Corp | 半導体装置 |
JP2007059636A (ja) | 2005-08-25 | 2007-03-08 | Renesas Technology Corp | Dmosfetおよびプレーナ型mosfet |
DE102007063840B3 (de) | 2006-01-31 | 2015-07-16 | Denso Corporation | Halbleitervorrichtungen mit Super-Junction-Struktur |
US7964912B2 (en) * | 2008-09-18 | 2011-06-21 | Power Integrations, Inc. | High-voltage vertical transistor with a varied width silicon pillar |
US20110011621A1 (en) * | 2009-07-17 | 2011-01-20 | Searete Llc, A Limited Liability Corporation Of The State Of Delaware | Smart link coupled to power line |
JP4998524B2 (ja) * | 2009-07-24 | 2012-08-15 | サンケン電気株式会社 | 半導体装置 |
US8525260B2 (en) * | 2010-03-19 | 2013-09-03 | Monolithic Power Systems, Inc. | Super junction device with deep trench and implant |
JP2011228611A (ja) * | 2010-03-30 | 2011-11-10 | Renesas Electronics Corp | 半導体装置およびその製造方法、ならびに電源装置 |
CN101969073B (zh) * | 2010-08-27 | 2012-06-13 | 东南大学 | 快速超结纵向双扩散金属氧化物半导体管 |
JP2012174949A (ja) | 2011-02-23 | 2012-09-10 | New Japan Radio Co Ltd | 半導体装置及びその製造方法 |
US8901647B2 (en) * | 2011-12-08 | 2014-12-02 | Infineon Technologies Ag | Semiconductor device including first and second semiconductor elements |
US8530964B2 (en) | 2011-12-08 | 2013-09-10 | Infineon Technologies Ag | Semiconductor device including first and second semiconductor elements |
JP5758365B2 (ja) | 2012-09-21 | 2015-08-05 | 株式会社東芝 | 電力用半導体素子 |
CN102969356B (zh) | 2012-11-08 | 2015-05-27 | 电子科技大学 | 一种超结功率器件终端结构 |
US9006811B2 (en) * | 2012-12-03 | 2015-04-14 | Infineon Technologies Austria Ag | Semiconductor device including a fin and a drain extension region and manufacturing method |
KR101795828B1 (ko) * | 2013-09-17 | 2017-11-10 | 매그나칩 반도체 유한회사 | 초접합 반도체 소자 및 제조 방법 |
JP5895038B2 (ja) * | 2014-11-06 | 2016-03-30 | ルネサスエレクトロニクス株式会社 | 半導体集積回路装置の製造方法 |
CN104952928A (zh) | 2015-04-30 | 2015-09-30 | 苏州东微半导体有限公司 | 一种栅漏电容缓变的超结功率器件及其制造方法 |
-
2016
- 2016-04-08 CN CN201680010382.3A patent/CN107408574B/zh active Active
- 2016-04-08 US US15/532,530 patent/US10411116B2/en active Active
- 2016-04-08 KR KR1020177025929A patent/KR101962834B1/ko active IP Right Grant
- 2016-04-08 DE DE112016001988.2T patent/DE112016001988B4/de active Active
- 2016-04-08 WO PCT/CN2016/078831 patent/WO2016173394A1/zh active Application Filing
- 2016-04-08 JP JP2017553301A patent/JP6423110B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
US10411116B2 (en) | 2019-09-10 |
DE112016001988T5 (de) | 2018-01-04 |
CN107408574B (zh) | 2021-03-30 |
US20180269311A1 (en) | 2018-09-20 |
KR101962834B1 (ko) | 2019-03-27 |
JP2018505566A (ja) | 2018-02-22 |
WO2016173394A1 (zh) | 2016-11-03 |
CN107408574A (zh) | 2017-11-28 |
DE112016001988B4 (de) | 2021-10-21 |
KR20170113668A (ko) | 2017-10-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6423110B2 (ja) | 半導体超接合パワーデバイス及びその製造方法 | |
KR101920717B1 (ko) | 이중 병렬 채널 구조를 갖는 반도체 소자 및 상기 반도체 소자의 제조 방법 | |
US9087911B2 (en) | Trench shield connected JFET | |
TWI570917B (zh) | 溝槽式功率金氧半場效電晶體與其製造方法 | |
JP5833277B1 (ja) | 半導体装置 | |
KR20180135035A (ko) | 초접합 전력 트랜지스터 및 그 제조방법 | |
TWI407564B (zh) | 具有溝槽底部多晶矽結構之功率半導體及其製造方法 | |
US8525257B2 (en) | LDMOS transistor with asymmetric spacer as gate | |
JP2007523487A (ja) | トレンチゲート半導体装置とその製造 | |
WO2019228069A1 (zh) | 一种具有交错叉指式排列的浅槽隔离结构横向半导体器件 | |
JP2011228643A (ja) | 半導体装置及びその製造方法 | |
CN106129105B (zh) | 沟槽栅功率mosfet及制造方法 | |
JP6249571B2 (ja) | 適応電荷平衡mosfet技法 | |
TWI599041B (zh) | 具有底部閘極之金氧半場效電晶體功率元件及其製作方法 | |
CN104377244A (zh) | 一种降低ldmos导通电阻的器件结构 | |
CN113035944A (zh) | 半导体装置 | |
US9711636B2 (en) | Super-junction semiconductor device | |
KR102554248B1 (ko) | 수퍼 정션 반도체 장치 및 이의 제조 방법 | |
JP5014622B2 (ja) | 絶縁ゲート型半導体装置の製造方法 | |
CN107994075B (zh) | 沟槽栅超结器件及其制造方法 | |
WO2023149131A1 (ja) | 半導体装置および半導体装置の製造方法 | |
CN111092113B (zh) | 金氧半场效应晶体管的终端区结构及其制造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20171201 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20171212 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20180306 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20180606 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20181002 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20181017 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6423110 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |