WO2019228069A1 - 一种具有交错叉指式排列的浅槽隔离结构横向半导体器件 - Google Patents

一种具有交错叉指式排列的浅槽隔离结构横向半导体器件 Download PDF

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WO2019228069A1
WO2019228069A1 PCT/CN2019/081808 CN2019081808W WO2019228069A1 WO 2019228069 A1 WO2019228069 A1 WO 2019228069A1 CN 2019081808 W CN2019081808 W CN 2019081808W WO 2019228069 A1 WO2019228069 A1 WO 2019228069A1
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trench isolation
shallow trench
region
type
area
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PCT/CN2019/081808
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French (fr)
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刘斯扬
孙伟锋
陈虹廷
叶然
吴海波
陆生礼
时龙兴
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东南大学
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0642—Isolation within the component, i.e. internal isolation
    • H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
    • H01L29/0653—Dielectric regions, e.g. SiO2 regions, air gaps adjoining the input or output region of a field-effect device, e.g. the source or drain region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692—Surface layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
    • H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/66681—Lateral DMOS transistors, i.e. LDMOS transistors

Definitions

  • the invention relates to the field of power semiconductor devices, and relates to a lateral semiconductor device having a staggered interdigitated shallow trench isolation structure.
  • LDMOS Lateral Double-Diffused MOSFET
  • shallow trench isolation technology Shallow Trench Isolation, STI
  • STI shallow Trench Isolation
  • the STI structure will increase the current flow path from the source terminal to the drain terminal, resulting in an increase in the on-resistance of the device. Therefore, when the STI structure is used in the LDMOS drift region, the breakdown voltage and the on-resistance cannot achieve a better compromise.
  • the present invention provides a lateral semiconductor device with a staggered interdigitated shallow trench isolation structure. Compared with a conventional LDMOS device, it can be realized at the same size. On the basis of almost constant breakdown voltage, a lower on-resistance is obtained.
  • a lateral semiconductor device with a staggered interdigitated shallow trench isolation structure includes a P-type substrate, a high-voltage N-type region is provided above the P-type substrate, and an N-type drift region is provided above the high-voltage N-type region.
  • P-type body region there are N-type drain region, first shallow trench isolation region, second shallow trench isolation region, and third shallow trench isolation region in the N-type drift region, and N-type in the P-type body region
  • the source region and the P-type region are further provided with a U-shaped gate oxide layer on the high-voltage N-type region, and the U-shaped opening of the gate oxide layer faces the drain end and the two ends respectively extend above the P-type body region and the first shallow region.
  • a polysilicon gate field plate is provided above the gate oxide layer, and drain metal contacts are respectively provided on the upper surfaces of the N-type drain region, the N-type source region, and the P-type region.
  • the source metal contact and the body metal contact, the first shallow trench isolation region, the second shallow trench isolation region, and the third shallow trench isolation region are arranged in a staggered interdigital manner in the drift region, and the first The two shallow trench isolation areas are in the middle of the first shallow trench isolation area and the third shallow trench isolation area, and the first shallow trench isolation area and the third shallow trench isolation area are separated by N.
  • the drain region has a certain distance and extends toward the source end.
  • One boundary of the second shallow trench isolation region is close to the N-type drain region and extends toward the source end. The other boundary extends into the first shallow trench isolation region and the third shallow trench. The area between the trench isolation areas.
  • the distance between the first shallow trench isolation region and the third shallow trench isolation region from the drain end is 0.2 ⁇ m-0.4 ⁇ m, the second shallow trench isolation region, the first shallow trench isolation region, and the third shallow trench isolation region.
  • the staggered distance is 0.1-0.3 ⁇ m, and the interval between two adjacent shallow trench isolation regions is 0.1 ⁇ m-0.3 ⁇ m.
  • the present invention has the following advantages:
  • FIG. 1 Compared with the conventional LDMOS device with a partial shallow trench isolation structure (as shown in FIG. 1), the structure of the present invention has a substantially constant breakdown voltage when the length of the shallow trench isolation region in the drift region is shortened.
  • the device structure of the present invention is shown in FIG. 2.
  • the first shallow trench isolation region 6A, the second shallow trench isolation region 6B, and the third shallow trench isolation region 6C are arranged in a staggered interdigital manner in the drift region.
  • FIG. 3 is a top view structure of the conventional LDMOS device with a partial shallow trench isolation structure shown in FIG. 1. It can be seen that the first shallow trench isolation region 6A and the second shallow trench isolation region 6B are depleted from both a and b directions. Drift zone.
  • FIG. 1 is a top view structure of the conventional LDMOS device with a partial shallow trench isolation structure shown in FIG. 1. It can be seen that the first shallow trench isolation region 6A and the second shallow trench isolation region 6B are depleted from both a and
  • FIG. 4 is a top view of a lateral device having a staggered interdigitated shallow trench isolation structure according to the present invention.
  • the first shallow trench isolation area 6A, the second shallow trench isolation area 6B, and the third shallow trench isolation area 6C assist from multiple directions.
  • the drift region is depleted to maintain the breakdown voltage.
  • the adjacent region is also shown in the figure.
  • the adjacent drift region between the two regions is also depleted from multiple directions. This method can make the electric field distribution in the drift region more Uniform, effectively reduce the surface electric field and reduce the impact ionization rate inside the device.
  • FIG. 7 compares the electric field distribution diagram of the BB ′ cross section of the structure of the present invention with the electric field distribution diagram of the cross section AA ′ of the conventional structure.
  • FIG. 5 is a comparison diagram of test results of the off-state breakdown characteristics of a lateral device having a staggered interdigitated array of shallow trench isolation structures and a conventional LDMOS device with a partial shallow trench isolation structure.
  • the structure of the present invention is shortened. In the case of the length of the shallow trench isolation region in the drift region, the breakdown voltage is basically unchanged.
  • the structure of the present invention reduces the on-resistance of the device while keeping the breakdown voltage substantially unchanged. This is because the length and width of the first shallow trench isolation region 6A, the second shallow trench isolation region 6B, and the third shallow trench isolation region 6C have been specifically designed.
  • the intersecting shallow trench isolation regions have better drift regions. Exhaustion effect.
  • a gap can be left between two adjacent shallow trench isolation areas, which provides additional current passage paths and allows the device to have multiple current flow paths.
  • the length of the shallow trench isolation region can be shortened, shortening the current flow path under the shallow trench isolation region, and further reducing the on-resistance of the device. Therefore, under the same breakdown voltage, the structure of the present invention has larger current in the linear region and the saturation region and lower on-resistance (as shown in FIG. 6) compared with the conventional structure.
  • the manufacturing process of the device structure of the present invention can be compatible with the traditional manufacturing process of the shallow trench isolation structure, and it can be realized only by changing the layout of the active area, so no additional process flow is required, and design and preparation costs can be saved.
  • FIG. 1 is a three-dimensional cross-sectional view illustrating a three-dimensional cross-sectional structure of a conventional LDMOS device with a partial shallow trench isolation structure.
  • FIG. 2 is a three-dimensional cross-sectional view illustrating a three-dimensional cross-sectional structure of a shallow trench isolation structure LDMOS device with staggered interdigital arrangement in the present invention.
  • FIG. 3 is a top view illustrating a top structure of a conventional LDMOS device with a partial shallow trench isolation structure.
  • FIG. 4 is a top view illustrating a top view of a lateral device having a staggered interdigitated shallow trench isolation structure according to the present invention.
  • FIG. 5 is a comparison diagram of the test results of the off-state breakdown characteristics of a lateral device with a staggered interdigitated shallow trench isolation structure and a conventional LDMOS structure.
  • FIG. 6 shows a comparison diagram of the I-V test results of a lateral device with a staggered interdigitated shallow trench isolation structure and a device with a conventional LDMOS structure in the present invention.
  • FIG. 7 shows a comparison diagram of the transverse cross-section electric field between a lateral device having a staggered interdigitated shallow trench isolation structure and a conventional LDMOS structure device.
  • a lateral semiconductor device with a staggered interdigitated shallow trench isolation structure includes: a P-type substrate 1; a high-voltage N-type region 2 is provided above the P-type substrate 1; and a high-voltage N-type region 2 is provided above the P-type substrate 1.
  • N-type drift region 5, first shallow trench isolation region 6A, second shallow trench isolation region 6B, and third shallow trench isolation region 6C are provided in the N-type drift region 3.
  • an N-type source region 7 and a P-type region 8 are provided.
  • a high-voltage N-type region 2 is further provided with a U-shaped gate oxide layer 9 and the U-shaped opening of the gate oxide layer 9 faces the drain.
  • a polysilicon gate field plate 10 is provided above the gate oxide layer 9, and N
  • the top surface of the drain region 5, the N-type source region 7, and the P-type region 8 are respectively provided with a drain metal contact 11, a source metal contact 12, and a body metal contact 13.
  • the first shallow trench isolation region 6A, The second shallow trench isolation region 6B and the third shallow trench isolation region 6C are arranged in a staggered interdigital manner in the drift region 3, and the second shallow trench isolation region 6B is located between the first shallow trench isolation region 6A and the third shallow trench.
  • said A shallow trench isolation region 6A and a third shallow trench isolation region 6C are at a distance from the N-type drain region 5 and extend toward the source end.
  • a boundary of the second shallow trench isolation region 6B is close to the N-type drain region 5 and Extending towards the source end, another boundary extends into the area between the first shallow trench isolation region 6A and the third shallow trench isolation region 6C.
  • the distance between the first shallow trench isolation region 6A and the third shallow trench isolation region 6C from the drain end is 0.2 ⁇ m-0.4 ⁇ m, and the second shallow trench isolation region 6B and the first shallow trench isolation region 6A,
  • the staggered distance of the third shallow trench isolation region 6C is 0.1-0.3 ⁇ m, and the interval between two adjacent shallow trench isolation regions is 0.1 ⁇ m-0.3 ⁇ m.
  • a P-type substrate silicon wafer is taken, pre-cleaned, and then a high-pressure N-type region 2 is formed after high-temperature annealing by N-type ion implantation.
  • the second step uses ion etching to form deep trenches, then etch out shallow trenches, then deposits silicon dioxide to fill the trenches, and finally uses chemical mechanical polishing to flatten the surface of the silicon wafer to form staggered forks Refers to the aligned shallow trench isolation areas 6A, 6B, and 6C.
  • an N-type drift region 3 is formed after high-temperature annealing by N-type ion implantation.
  • a gate oxide layer 9 is grown and polysilicon is deposited and etched to form a polysilicon gate field plate 10.
  • N-type drain regions 5, N-type source regions 7, and P-type regions 8 are formed by implanting high doses of boron ions and phosphorus ions.
  • the sixth step is to grow silicon dioxide, lithography the channel region, and perform threshold voltage adjustment implantation.
  • the metal electrode lead-out holes are lithographically formed, a metal layer is deposited, and the excess metal is etched away to form a drain metal contact 11, a source metal contact 12, and a body region metal contact 13.

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Abstract

一种具有交错叉指式浅槽隔离结构的横向半导体器件，包括：P型衬底（1），在P型衬底（1）的上方设有高压N型区（2），在高压N型区（2）的上方设有N型漂移区（3）和P型体区（4），在N型漂移区（3）内设有N型漏区（5）和三个浅槽隔离区（6A，6B，6C），在P型体区（4）内设有N型源区（7）和P型区（8），在高压N型区（2）上还设有U形栅氧化层（9）且所述栅氧化层（9）的U形开口朝向漏端并且两端分别延伸至P型体区（4）的上方和浅槽隔离区（6A，6C）的上方，在栅氧化层（9）的上方设有多晶硅栅场板（10），在N型漏区（5）、N型源区（7）和P型区（8）的上表面分别设有漏极金属接触（11）、源极金属接触（12）和体区金属接触（13），其特征在于，所述的浅槽隔离区（6A，6B，6C）在漂移区（3）内呈交错叉指式排列。该器件能够在击穿电压不变的基础上，获得较低的导通电阻。

Description

一种具有交错叉指式排列的浅槽隔离结构横向半导体器件 技术领域
本发明涉及功率半导体器件领域，是关于一种具有交错叉指式浅槽隔离结构的横向半导体器件。
背景技术
横向双扩散金属氧化物半导体场效应管(Lateral Double-Diffused MOSFET，简称LDMOS)具有高击穿电压、高输入阻抗及易于与其他器件集成等优点，被广泛应用在高压集成电路和功率集成电路中。与传统MOSFET器件相比，LDMOS器件具有一个低掺杂的漂移区，当漏源之间加高压时，由于漂移区全部耗尽，所以能承受更高的电压。
在LDMOS器件结构的设计中，常在漂移区使用浅槽隔离技术(Shallow Trench Isolation，STI)来提高器件的耐压能力。采用STI结构的LDMOS器件，STI可以在漂移区内承担大部分电场，有助于漂移区更好的耗尽，因此其具有更高的击穿电压。虽然该工艺可以提高器件的耐压能力，但是STI结构会使电流从源端流向漏端的流动路径增大，导致器件的导通电阻增大。因此，在LDMOS的漂移区采用STI结构时，击穿电压和导通电阻无法取得更好的折中。
发明内容
针对LDMOS的导通电阻和击穿电压之间的矛盾关系，本发明提供一种具有交错叉指式浅槽隔离结构的横向半导体器件，与传统的LDMOS器件相比，在同样的尺寸下可实现在击穿电压几乎不变的基础上，获得较低的导通电阻。
本发明采用如下技术方案：
一种具有交错叉指式浅槽隔离结构的横向半导体器件，包括：P型衬底，在P型衬底的上方设有高压N型区，在高压N型区的上方设有N型漂移区和P型体区，在N型漂移区内设有N型漏区、第一浅槽隔离区、第二浅槽隔离区和第三浅槽隔离区，在P型体区内设有N型源区和P型区，在高压N型区上还设有U形栅氧化层且所述栅氧化层的U形开口朝向漏端并且两端分别延伸至P型体区的上方和第一浅槽隔离区、第三浅槽隔离区的上方，在栅氧化层的上方设有多晶硅栅场板，在N型漏区、N型源区和P型区的上表面分别设有漏极金属接触、源极金属接触和体区金属接触，所述的第一浅槽隔离区、第二浅槽隔离区和第三 浅槽隔离区在漂移区内呈交错叉指式排列，并且所述的第二浅槽隔离区在第一浅槽隔离区和第三浅槽隔离区的中间，所述的第一浅槽隔离区和第三浅槽隔离区距N型漏区有一定距离且向源端延伸，所述的第二浅槽隔离区的一个边界紧靠N型漏区且向源端延伸，另一个边界延伸进入第一浅槽隔离区和第三浅槽隔离区之间的区域。
进一步的，所述的第一浅槽隔离区和第三浅槽隔离区距离漏端的距离为0.2μm-0.4μm，第二浅槽隔离区和第一浅槽隔离区、第三浅槽隔离区交错的距离为0.1-0.3μm，相邻两个浅槽隔离区之间的间距为0.1μm-0.3μm。
与现有技术相比，本发明具有如下优点：
1、本发明结构与传统的带有部分浅槽隔离结构的LDMOS器件(如图1所示)相比，在缩短漂移区内浅槽隔离区长度的情况下，击穿电压基本不变。本发明器件结构如图2所示，第一浅槽隔离区6A、第二浅槽隔离区6B和第三浅槽隔离区6C在漂移区内呈交错叉指式排列。图3为图1所示传统的带有部分浅槽隔离结构的LDMOS器件的俯视结构，可以看出第一浅槽隔离区6A和第二浅槽隔离区6B从a、b两个方向耗尽漂移区。图4为本发明中具有交错叉指式浅槽隔离结构的横向器件的俯视结构，第一浅槽隔离区6A、第二浅槽隔离区6B和第三浅槽隔离区6C从多个方向辅助漂移区耗尽来维持击穿电压，图中还画出了其相邻的区域，两个区域之间相邻的漂移区同样从多个方向被耗尽，该方式可以使漂移区电场分布更加均匀，有效减小表面电场，降低器件内部的碰撞电离率。图7将本发明结构BB’截面电场分布图和传统结构AA’截面电场分布图进行比较，与传统结构相比，本发明结构的横向峰值电场有所下降。图5为具有交错叉指排列浅槽隔离结构的横向器件和传统的带有部分浅槽隔离结构的LDMOS器件关态击穿特性测试结果的比较图，与传统结构相比，本发明结构在缩短漂移区浅槽隔离区长度的情况下击穿电压基本不变。
2、本发明结构与图1所示传统的带有部分浅槽隔离结构的LDMOS器件相比，在保持击穿电压基本不变的基础上降低器件的导通电阻。这是由于第一浅槽隔离区6A、第二浅槽隔离区6B和第三浅槽隔离区6C的长度和宽度经过特定的设计，相互交错的浅沟槽隔离区对漂移区具有更好的耗尽作用。一方面，相邻的两个浅槽隔离区之间可以留有间距，提供了额外的电流通过路径，使器件具有多 条电流流动路径。另一方面，与传统结构相比，浅槽隔离区长度可以变短，缩短电流在浅沟槽隔离区下方的流动路径，使器件的导通电阻进一步降低。因此，在相同击穿电压下，本发明结构与传统结构相比，在线性区和饱和区的电流更大，导通电阻更低(如图6所示)。
3、本发明器件结构的制造工艺可以与传统浅槽隔离结构制备工艺相兼容，仅需要改变有源区的版图方式就可以实现，故不需要额外的工艺流程，可以节约设计和制备成本。
附图说明
图1是三维立体剖面图，图示了传统的带有部分浅槽隔离结构的LDMOS器件的立体剖面结构。
图2是三维立体剖面图，图示了本发明中具有交错叉指式排列的浅槽隔离结构LDMOS器件的立体剖面结构。
图3是俯视图，图示了传统的带有部分浅槽隔离结构的LDMOS器件的俯视结构。
图4是俯视图，图示了本发明中具有交错叉指式浅槽隔离结构的横向器件俯视结构。
图5所示为本发明中具有交错叉指式浅槽隔离结构的横向器件和传统的LDMOS结构的器件关态击穿特性测试结果的比较图。
图6所示为本发明中具有交错叉指式浅槽隔离结构的横向器件和传统的LDMOS结构的器件的I-V测试结果的比较图。
图7所示为本发明中具有交错叉指式浅槽隔离结构的横向器件和传统的LDMOS结构的器件的横向截面电场的比较图。
具体实施方式
一种具有交错叉指式浅槽隔离结构的横向半导体器件，包括：P型衬底1，在P型衬底1的上方设有高压N型区2，在高压N型区2的上方设有N型漂移区3和P型体区4，在N型漂移区3内设有N型漏区5、第一浅槽隔离区6A、第二浅槽隔离区6B和第三浅槽隔离区6C，在P型体区4内设有N型源区7和 P型区8，在高压N型区2上还设有U形栅氧化层9且所述栅氧化层9的U形开口朝向漏端并且两端分别延伸至P型体区4的上方和第一浅槽隔离区6A、第三浅槽隔离区6C的上方，在栅氧化层9的上方设有多晶硅栅场板10，在N型漏区5、N型源区7和P型区8的上表面分别设有漏极金属接触11、源极金属接触12和体区金属接触13，所述的第一浅槽隔离区6A、第二浅槽隔离区6B和第三浅槽隔离区6C在漂移区3内呈交错叉指式排列，并且所述的第二浅槽隔离区6B在第一浅槽隔离区6A和第三浅槽隔离区6C的中间，所述的第一浅槽隔离区6A和第三浅槽隔离区6C距N型漏区5有一定距离且向源端延伸，所述的第二浅槽隔离区6B的一个边界紧靠N型漏区5且向源端延伸，另一个边界延伸进入第一浅槽隔离区6A和第三浅槽隔离区6C之间的区域。
在实施例中，所述的第一浅槽隔离区6A和第三浅槽隔离区6C距离漏端的距离为0.2μm-0.4μm，第二浅槽隔离区6B和第一浅槽隔离区6A、第三浅槽隔离区6C交错的距离为0.1-0.3μm，相邻两个浅槽隔离区之间的间距为0.1μm-0.3μm。
制备如上所述的一种具有交错叉指式浅槽隔离结构的横向半导体器件，具体步骤如下：
第一步，取P型衬底硅圆片，对其进行预清洗，然后通过N型离子注入高温退火后形成高压N型区2。
第二步，光刻，利用离子刻蚀先形成深的沟槽，再刻蚀出浅的沟槽，之后淀积二氧化硅填充沟槽，最后利用化学机械抛光使硅片表面平整形成交错叉指排列的浅槽隔离区6A、6B和6C。
第三步，通过N型离子注入高温退火后形成N型漂移区3。
第四步，生长栅氧化层9，并淀积刻蚀多晶硅形成多晶硅栅场板10。
第五步，通过高剂量的硼离子和磷离子注入，形成N型漏区5、N型源区7和P型区8。
第六步，生长二氧化硅，光刻出沟道区，进行阈值电压调整注入。
第七步，光刻出金属电极引出孔，淀积金属层，刻蚀掉多余金属，形成漏极金属接触11、源极金属接触12和体区金属接触13。

Claims (2)

  1. 一种具有交错叉指式浅槽隔离结构的横向半导体器件，包括：P型衬底(1)，在P型衬底(1)的上方设有高压N型区(2)，在高压N型区(2)的上方设有N型漂移区(3)和P型体区(4)，在N型漂移区(3)内设有N型漏区(5)、第一浅槽隔离区(6A)、第二浅槽隔离区(6B)和第三浅槽隔离区(6C)，在P型体区(4)内设有N型源区(7)和P型区(8)，在高压N型区(2)上还设有U形栅氧化层(9)且所述栅氧化层(9)的U形开口朝向漏端并且两端分别延伸至P型体区(4)的上方和第一浅槽隔离区(6A)、第三浅槽隔离区(6C)的上方，在栅氧化层(9)的上方设有多晶硅栅场板(10)，在N型漏区(5)、N型源区(7)和P型区(8)的上表面分别设有漏极金属接触(11)、源极金属接触(12)和体区金属接触(13)，其特征在于，所述的第一浅槽隔离区(6A)、第二浅槽隔离区(6B)和第三浅槽隔离区(6C)在漂移区(3)内呈交错叉指式排列，并且所述的第二浅槽隔离区(6B)在第一浅槽隔离区(6A)和第三浅槽隔离区(6C)的中间，所述的第一浅槽隔离区(6A)和第三浅槽隔离区(6C)距N型漏区(5)有一定距离且向源端延伸，所述的第二浅槽隔离区(6B)的一个边界紧靠N型漏区(5)且向源端延伸，另一个边界延伸进入第一浅槽隔离区(6A)和第三浅槽隔离区(6C)之间的区域。
  2. 根据权利要求1所述的一种具有交错叉指式浅槽隔离结构的横向半导体器件，其特征在于，所述的第一浅槽隔离区(6A)和第三浅槽隔离区(6C)距离漏端的距离为0.2μm-0.4μm，第二浅槽隔离区(6B)和第一浅槽隔离区(6A)、第三浅槽隔离区(6C)交错的距离为0.1-0.3μm，相邻两个浅槽隔离区之间的间距为0.1μm-0.3μm。
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