JP6421570B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

Info

Publication number
JP6421570B2
JP6421570B2 JP2014248139A JP2014248139A JP6421570B2 JP 6421570 B2 JP6421570 B2 JP 6421570B2 JP 2014248139 A JP2014248139 A JP 2014248139A JP 2014248139 A JP2014248139 A JP 2014248139A JP 6421570 B2 JP6421570 B2 JP 6421570B2
Authority
JP
Japan
Prior art keywords
igbt
region
layer
diode
conductivity type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2014248139A
Other languages
English (en)
Japanese (ja)
Other versions
JP2015135954A5 (enExample
JP2015135954A (ja
Inventor
イ涛 程
イ涛 程
高橋　茂樹
茂樹 高橋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
Denso Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Denso Corp filed Critical Denso Corp
Priority to JP2014248139A priority Critical patent/JP6421570B2/ja
Priority to US15/105,664 priority patent/US9721945B2/en
Priority to PCT/JP2014/006244 priority patent/WO2015093038A1/ja
Publication of JP2015135954A publication Critical patent/JP2015135954A/ja
Publication of JP2015135954A5 publication Critical patent/JP2015135954A5/ja
Application granted granted Critical
Publication of JP6421570B2 publication Critical patent/JP6421570B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
    • H10D84/406—Combinations of FETs or IGBTs with vertical BJTs and with one or more of diodes, resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/142—Anode regions of thyristors or collector regions of gated bipolar-mode devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351—Substrate regions of field-effect devices
    • H10D62/357—Substrate regions of field-effect devices of FETs
    • H10D62/364—Substrate regions of field-effect devices of FETs of IGFETs
    • H10D62/378—Contact regions to the substrate regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/50—Physical imperfections
    • H10D62/53—Physical imperfections the imperfections being within the semiconductor body 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/422—PN diodes having the PN junctions in mesas

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2014248139A 2013-12-20 2014-12-08 半導体装置 Active JP6421570B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2014248139A JP6421570B2 (ja) 2013-12-20 2014-12-08 半導体装置
US15/105,664 US9721945B2 (en) 2013-12-20 2014-12-16 Semiconductor device with IGBT and diode
PCT/JP2014/006244 WO2015093038A1 (ja) 2013-12-20 2014-12-16 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013264294 2013-12-20
JP2013264294 2013-12-20
JP2014248139A JP6421570B2 (ja) 2013-12-20 2014-12-08 半導体装置

Publications (3)

Publication Number Publication Date
JP2015135954A JP2015135954A (ja) 2015-07-27
JP2015135954A5 JP2015135954A5 (enExample) 2017-04-13
JP6421570B2 true JP6421570B2 (ja) 2018-11-14

Family

ID=53402406

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014248139A Active JP6421570B2 (ja) 2013-12-20 2014-12-08 半導体装置

Country Status (3)

Country Link
US (1) US9721945B2 (enExample)
JP (1) JP6421570B2 (enExample)
WO (1) WO2015093038A1 (enExample)

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6185511B2 (ja) * 2015-05-26 2017-08-23 トヨタ自動車株式会社 半導体装置
DE102015111371B4 (de) 2015-07-14 2017-07-20 Infineon Technologies Ag Halbleiterbauelement mit einem schaltbaren und einem nicht schaltbaren Diodengebiet
JP6582762B2 (ja) * 2015-09-03 2019-10-02 株式会社デンソー 半導体装置
JP6531589B2 (ja) * 2015-09-17 2019-06-19 株式会社デンソー 半導体装置
JP6299789B2 (ja) * 2016-03-09 2018-03-28 トヨタ自動車株式会社 スイッチング素子
WO2017155122A1 (ja) 2016-03-10 2017-09-14 富士電機株式会社 半導体装置
US9768285B1 (en) * 2016-03-16 2017-09-19 Semiconductor Components Industries, Llc Semiconductor device and method of manufacture
JP6702423B2 (ja) 2016-08-12 2020-06-03 富士電機株式会社 半導体装置および半導体装置の製造方法
JP6724993B2 (ja) 2016-08-12 2020-07-15 富士電機株式会社 半導体装置および半導体装置の製造方法
CN106206679B (zh) * 2016-08-31 2019-08-23 电子科技大学 一种逆导型igbt
WO2018052099A1 (ja) 2016-09-14 2018-03-22 富士電機株式会社 Ｒｃ－ｉｇｂｔおよびその製造方法
US10559663B2 (en) 2016-10-14 2020-02-11 Fuji Electric Co., Ltd. Semiconductor device with improved current flow distribution
WO2018074425A1 (ja) * 2016-10-17 2018-04-26 富士電機株式会社 半導体装置
WO2018074434A1 (ja) * 2016-10-17 2018-04-26 富士電機株式会社 半導体装置
WO2018092738A1 (ja) 2016-11-17 2018-05-24 富士電機株式会社 半導体装置
JP6939300B2 (ja) 2016-11-17 2021-09-22 富士電機株式会社 半導体装置
CN109314141B (zh) 2016-12-08 2021-09-14 富士电机株式会社 半导体装置
CN109219888B (zh) 2016-12-08 2022-03-29 富士电机株式会社 半导体装置
CN109891595B (zh) 2017-05-31 2022-05-24 富士电机株式会社 半导体装置
US10847617B2 (en) 2017-12-14 2020-11-24 Fuji Electric Co., Ltd. Semiconductor device
CN110914999B (zh) 2018-01-17 2023-11-17 富士电机株式会社 半导体装置
JP6862381B2 (ja) 2018-03-02 2021-04-21 株式会社東芝 半導体装置
JP2019160877A (ja) * 2018-03-08 2019-09-19 トヨタ自動車株式会社 半導体装置
JP7091204B2 (ja) * 2018-09-19 2022-06-27 株式会社東芝 半導体装置
JP7357000B2 (ja) * 2018-10-18 2023-10-05 ローム株式会社 半導体装置
DE102019106087B3 (de) * 2019-03-11 2020-06-18 Infineon Technologies Ag Halbleitervorrichtung mit einem halbleiterkörper aus siliziumcarbid und verfahren
WO2021010000A1 (ja) 2019-07-12 2021-01-21 富士電機株式会社 半導体装置
DE102019133030B4 (de) * 2019-12-04 2023-05-04 Infineon Technologies Austria Ag Bipolartransistor mit isoliertem gate enthaltende halbleitervorrichtung und herstellungsverfahren
DE112020002890T5 (de) * 2020-01-17 2022-02-24 Fuji Electric Co., Ltd. Halbleitervorrichtung
US11296213B2 (en) * 2020-03-20 2022-04-05 Infineon Technologies Austria Ag Reverse-conducting igbt having a reduced forward recovery voltage
JP7405261B2 (ja) 2020-07-15 2023-12-26 富士電機株式会社 半導体装置
JP7475251B2 (ja) * 2020-10-01 2024-04-26 三菱電機株式会社 半導体装置
JP7494745B2 (ja) * 2021-01-26 2024-06-04 三菱電機株式会社 半導体装置および半導体装置の製造方法
JP7016437B2 (ja) * 2021-02-25 2022-02-04 三菱電機株式会社 半導体スイッチング素子及びその製造方法
DE112022005320T5 (de) * 2021-12-08 2024-08-29 Rohm Co., Ltd. Halbleitervorrichtung
JP2024151483A (ja) * 2023-04-12 2024-10-25 ミネベアパワーデバイス株式会社 半導体装置
JP7889402B2 (ja) * 2023-07-25 2026-07-14 株式会社デンソー 半導体装置
JP2025116951A (ja) * 2024-01-30 2025-08-12 ミネベアパワーデバイス株式会社 半導体装置、半導体装置の製造方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007134625A (ja) 2005-11-14 2007-05-31 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP4857948B2 (ja) 2006-06-26 2012-01-18 株式会社デンソー 半導体装置の製造方法
JP5103830B2 (ja) 2006-08-28 2012-12-19 三菱電機株式会社 絶縁ゲート型半導体装置
JP2008192737A (ja) * 2007-02-02 2008-08-21 Denso Corp 半導体装置
JP4840482B2 (ja) 2008-10-14 2011-12-21 株式会社デンソー 半導体装置
JP4957840B2 (ja) * 2010-02-05 2012-06-20 株式会社デンソー 絶縁ゲート型半導体装置
JP5190485B2 (ja) * 2010-04-02 2013-04-24 株式会社豊田中央研究所 半導体装置
US8716746B2 (en) * 2010-08-17 2014-05-06 Denso Corporation Semiconductor device
JP5321669B2 (ja) 2010-11-25 2013-10-23 株式会社デンソー 半導体装置
JP5594276B2 (ja) 2010-12-08 2014-09-24 株式会社デンソー 絶縁ゲート型半導体装置
JP5937413B2 (ja) * 2011-06-15 2016-06-22 株式会社デンソー 半導体装置
JP5821320B2 (ja) 2011-06-23 2015-11-24 トヨタ自動車株式会社 ダイオード
JP6127421B2 (ja) 2012-09-24 2017-05-17 株式会社デンソー 半導体装置

Also Published As

Publication number Publication date
US20170025410A1 (en) 2017-01-26
JP2015135954A (ja) 2015-07-27
US9721945B2 (en) 2017-08-01
WO2015093038A1 (ja) 2015-06-25

Similar Documents

Publication Publication Date Title
JP2015135954A (ja) 半導体装置
US8981470B2 (en) Semiconductor device and manufacturing method of the same
JP6365165B2 (ja) 半導体装置の製造方法
JP5348276B2 (ja) 半導体装置
JP5102411B2 (ja) 半導体装置およびその製造方法
JP6226786B2 (ja) 半導体装置およびその製造方法
US20140203356A1 (en) Semiconductor device including vertical semiconductor element
US8242537B2 (en) IGBT with fast reverse recovery time rectifier and manufacturing method thereof
JP4456013B2 (ja) 半導体装置
JP2012169386A (ja) 炭化珪素半導体装置およびその製造方法
JP6127421B2 (ja) 半導体装置
US20190081030A1 (en) Semiconductor device
JP2007184486A (ja) 半導体装置
JP2009289904A (ja) 半導体装置
CN102983164A (zh) 半导体器件及其制造方法
US20160149029A1 (en) Semiconductor device and method for manufacturing semiconductor device
CN104471710A (zh) 半导体装置及其制造方法
JP2020004876A (ja) 炭化珪素半導体装置
JP6582762B2 (ja) 半導体装置
WO2020075248A1 (ja) 半導体装置及びその製造方法
JP2011243919A (ja) 半導体装置およびその製造方法
JP2012049466A (ja) 半導体装置およびその製造方法
JP2015153988A (ja) 半導体装置
JP7392613B2 (ja) 半導体装置
JP2012104581A (ja) 半導体装置及びその製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20170308

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20170428

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20180206

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20180404

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20180918

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20181001

R151 Written notification of patent or utility model registration

Ref document number: 6421570

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R151

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250