JP6421570B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP6421570B2
JP6421570B2 JP2014248139A JP2014248139A JP6421570B2 JP 6421570 B2 JP6421570 B2 JP 6421570B2 JP 2014248139 A JP2014248139 A JP 2014248139A JP 2014248139 A JP2014248139 A JP 2014248139A JP 6421570 B2 JP6421570 B2 JP 6421570B2
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Japan
Prior art keywords
igbt
region
layer
diode
conductivity type
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JP2014248139A
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English (en)
Japanese (ja)
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JP2015135954A (ja
JP2015135954A5 (enExample
Inventor
イ涛 程
イ涛 程
高橋　茂樹
茂樹 高橋
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Denso Corp
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Denso Corp
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Priority to JP2014248139A priority Critical patent/JP6421570B2/ja
Priority to PCT/JP2014/006244 priority patent/WO2015093038A1/ja
Priority to US15/105,664 priority patent/US9721945B2/en
Publication of JP2015135954A publication Critical patent/JP2015135954A/ja
Publication of JP2015135954A5 publication Critical patent/JP2015135954A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
    • H10D84/406—Combinations of FETs or IGBTs with vertical BJTs and with one or more of diodes, resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/142—Anode regions of thyristors or collector regions of gated bipolar-mode devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351—Substrate regions of field-effect devices
    • H10D62/357—Substrate regions of field-effect devices of FETs
    • H10D62/364—Substrate regions of field-effect devices of FETs of IGFETs
    • H10D62/378—Contact regions to the substrate regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/50—Physical imperfections
    • H10D62/53—Physical imperfections the imperfections being within the semiconductor body 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/422—PN diodes having the PN junctions in mesas

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  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2014248139A 2013-12-20 2014-12-08 半導体装置 Active JP6421570B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2014248139A JP6421570B2 (ja) 2013-12-20 2014-12-08 半導体装置
PCT/JP2014/006244 WO2015093038A1 (ja) 2013-12-20 2014-12-16 半導体装置
US15/105,664 US9721945B2 (en) 2013-12-20 2014-12-16 Semiconductor device with IGBT and diode

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013264294 2013-12-20
JP2013264294 2013-12-20
JP2014248139A JP6421570B2 (ja) 2013-12-20 2014-12-08 半導体装置

Publications (3)

Publication Number Publication Date
JP2015135954A JP2015135954A (ja) 2015-07-27
JP2015135954A5 JP2015135954A5 (enExample) 2017-04-13
JP6421570B2 true JP6421570B2 (ja) 2018-11-14

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JP2014248139A Active JP6421570B2 (ja) 2013-12-20 2014-12-08 半導体装置

Country Status (3)

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US (1) US9721945B2 (enExample)
JP (1) JP6421570B2 (enExample)
WO (1) WO2015093038A1 (enExample)

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JP6185511B2 (ja) * 2015-05-26 2017-08-23 トヨタ自動車株式会社 半導体装置
DE102015111371B4 (de) 2015-07-14 2017-07-20 Infineon Technologies Ag Halbleiterbauelement mit einem schaltbaren und einem nicht schaltbaren Diodengebiet
JP6582762B2 (ja) * 2015-09-03 2019-10-02 株式会社デンソー 半導体装置
JP6531589B2 (ja) * 2015-09-17 2019-06-19 株式会社デンソー 半導体装置
JP6299789B2 (ja) * 2016-03-09 2018-03-28 トヨタ自動車株式会社 スイッチング素子
CN107924951B (zh) 2016-03-10 2021-11-23 富士电机株式会社 半导体装置
US9768285B1 (en) * 2016-03-16 2017-09-19 Semiconductor Components Industries, Llc Semiconductor device and method of manufacture
WO2018030444A1 (ja) 2016-08-12 2018-02-15 富士電機株式会社 半導体装置および半導体装置の製造方法
WO2018030440A1 (ja) 2016-08-12 2018-02-15 富士電機株式会社 半導体装置および半導体装置の製造方法
CN106206679B (zh) * 2016-08-31 2019-08-23 电子科技大学 一种逆导型igbt
CN108780809B (zh) 2016-09-14 2021-08-31 富士电机株式会社 Rc-igbt及其制造方法
CN107958906B (zh) 2016-10-14 2023-06-23 富士电机株式会社 半导体装置
JP6733739B2 (ja) * 2016-10-17 2020-08-05 富士電機株式会社 半導体装置
WO2018074425A1 (ja) * 2016-10-17 2018-04-26 富士電機株式会社 半導体装置
WO2018092738A1 (ja) 2016-11-17 2018-05-24 富士電機株式会社 半導体装置
EP3324443B1 (en) * 2016-11-17 2019-09-11 Fuji Electric Co., Ltd. Semiconductor device
JP6939300B2 (ja) * 2016-11-17 2021-09-22 富士電機株式会社 半導体装置
CN109314141B (zh) 2016-12-08 2021-09-14 富士电机株式会社 半导体装置
WO2018105729A1 (ja) 2016-12-08 2018-06-14 富士電機株式会社 半導体装置
JP6780777B2 (ja) 2017-05-31 2020-11-04 富士電機株式会社 半導体装置
US10847617B2 (en) 2017-12-14 2020-11-24 Fuji Electric Co., Ltd. Semiconductor device
WO2019142706A1 (ja) 2018-01-17 2019-07-25 富士電機株式会社 半導体装置
JP6862381B2 (ja) 2018-03-02 2021-04-21 株式会社東芝 半導体装置
JP2019160877A (ja) * 2018-03-08 2019-09-19 トヨタ自動車株式会社 半導体装置
JP7091204B2 (ja) * 2018-09-19 2022-06-27 株式会社東芝 半導体装置
WO2020080476A1 (ja) * 2018-10-18 2020-04-23 ローム株式会社 半導体装置
DE102019106087B3 (de) * 2019-03-11 2020-06-18 Infineon Technologies Ag Halbleitervorrichtung mit einem halbleiterkörper aus siliziumcarbid und verfahren
WO2021010000A1 (ja) 2019-07-12 2021-01-21 富士電機株式会社 半導体装置
DE102019133030B4 (de) 2019-12-04 2023-05-04 Infineon Technologies Austria Ag Bipolartransistor mit isoliertem gate enthaltende halbleitervorrichtung und herstellungsverfahren
JP7231065B2 (ja) * 2020-01-17 2023-03-01 富士電機株式会社 半導体装置
US11296213B2 (en) * 2020-03-20 2022-04-05 Infineon Technologies Austria Ag Reverse-conducting igbt having a reduced forward recovery voltage
JP7405261B2 (ja) 2020-07-15 2023-12-26 富士電機株式会社 半導体装置
JP7475251B2 (ja) * 2020-10-01 2024-04-26 三菱電機株式会社 半導体装置
JP7494745B2 (ja) * 2021-01-26 2024-06-04 三菱電機株式会社 半導体装置および半導体装置の製造方法
JP7016437B2 (ja) * 2021-02-25 2022-02-04 三菱電機株式会社 半導体スイッチング素子及びその製造方法
WO2023106152A1 (ja) * 2021-12-08 2023-06-15 ローム株式会社 半導体装置
JP2024151483A (ja) * 2023-04-12 2024-10-25 ミネベアパワーデバイス株式会社 半導体装置
JP2025116951A (ja) * 2024-01-30 2025-08-12 ミネベアパワーデバイス株式会社 半導体装置、半導体装置の製造方法

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JP2007134625A (ja) * 2005-11-14 2007-05-31 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP4857948B2 (ja) 2006-06-26 2012-01-18 株式会社デンソー 半導体装置の製造方法
JP5103830B2 (ja) 2006-08-28 2012-12-19 三菱電機株式会社 絶縁ゲート型半導体装置
JP2008192737A (ja) * 2007-02-02 2008-08-21 Denso Corp 半導体装置
JP4840482B2 (ja) 2008-10-14 2011-12-21 株式会社デンソー 半導体装置
JP4957840B2 (ja) * 2010-02-05 2012-06-20 株式会社デンソー 絶縁ゲート型半導体装置
JP5190485B2 (ja) * 2010-04-02 2013-04-24 株式会社豊田中央研究所 半導体装置
US8716746B2 (en) * 2010-08-17 2014-05-06 Denso Corporation Semiconductor device
JP5321669B2 (ja) 2010-11-25 2013-10-23 株式会社デンソー 半導体装置
JP5594276B2 (ja) 2010-12-08 2014-09-24 株式会社デンソー 絶縁ゲート型半導体装置
JP5937413B2 (ja) 2011-06-15 2016-06-22 株式会社デンソー 半導体装置
JP5821320B2 (ja) 2011-06-23 2015-11-24 トヨタ自動車株式会社 ダイオード
JP6127421B2 (ja) 2012-09-24 2017-05-17 株式会社デンソー 半導体装置

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US20170025410A1 (en) 2017-01-26
JP2015135954A (ja) 2015-07-27
US9721945B2 (en) 2017-08-01
WO2015093038A1 (ja) 2015-06-25

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