CN106206679B - 一种逆导型igbt - Google Patents

一种逆导型igbt Download PDF

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CN106206679B
CN106206679B CN201610786770.2A CN201610786770A CN106206679B CN 106206679 B CN106206679 B CN 106206679B CN 201610786770 A CN201610786770 A CN 201610786770A CN 106206679 B CN106206679 B CN 106206679B
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CN106206679A (zh
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罗小蓉
邓高强
周坤
刘庆
黄琳华
孙涛
张波
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University of Electronic Science and Technology of China
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Abstract

本发明属于功率半导体器件技术领域，涉及一种逆导型IGBT。本发明的逆导型IGBT，其技术方案是：在N型高阻半导体材料表面形成P型区，所述P型区表面并列交替形成N型发射区和P型体接触区。在N型发射区中部形成贯穿P型区且底部与N型高阻半导体相接触的介质槽，由介质槽中的导电材料引出栅电极，形成槽栅结构；所述N型发射区和P型体接触区的共同引出端为发射极电极。在N型高阻半导体材料的背面，由连续交替变换的N型区和P型区形成集电区，所述N型和P型区的共同引出端为集电极。所述集电区的顶部引入电场截止区，电场截止区与集电区之间在器件纵向方向上有距离，电场截止区由沿器件横向方向连续交替变换的重掺杂N型区和轻掺杂P型区组成。

Description

一种逆导型IGBT
技术领域
本发明属于功率半导体器件技术领域，涉及一种逆导型IGBT(绝缘栅双极型晶体管)。
背景技术
逆导型IGBT最早由Hideki Takahashi在文献“1200V Reverse Conducting IGBT”(04’ISPSD)中提出，其原理是将反并联的IGBT和二极管集成在一块芯片以实现双向导通(如说明书附图1所示)。逆导型IGBT的优势是能够有效避免传统IGBT和二极管在封装过程中产生的寄生效应，并且降低制造成本。逆导型IGBT的一般做法是将传统IGBT一部分P型集电区由N型集电区取代，如说明书附图2所示。对于说明书附图2所示的逆导型IGBT，在器件正向导通初期，流经漂移区的电流均为电子电流，电子电流由N型集电区收集，这种导通模式即为MOSFET模式。当器件集电极和发射极之间电压增大至使得集电区PN结(P型集电区与N型场截止区构成的PN结)开启时，大量空穴开始注入漂移区发生电导调制效应，器件的正向导通电压大幅降低，这种导通模式即为IGBT模式。由于存在MOSFET模式到IGBT模式的转换，传统逆导型IGBT的输出特性曲线出现负阻效应(又称电压回跳现象)，如说明书附图3所示。
发明内容
本发明所要解决的，是针对上述问题提出一种消除电压回跳现象的逆导型IGBT。
本发明的技术方案是：一种逆导型IGBT，在N型高阻半导体材料表面形成P型区1，所述P型区表面沿器件横向方向并列交替形成N型发射区3和P型体接触区4；在N型发射区3中部具有贯穿P型区1且底部与N型高阻半导体相接触的介质槽2，介质槽中具有位于槽内壁的绝缘介质层21和由绝缘介质层21包围的导电材料22，由介质槽中的导电材料22引出栅电极，形成槽栅结构；所述N型发射区3和P型体接触区4的共同引出端为发射极电极；在N型高阻半导体材料的背面，沿器件横向方向由连续交替变换的N型区51和P型区52形成集电区，所述N型区51和P型区52的共同引出端为集电极；所述集电区的正上方具有电场截止区6，电场截止区6与集电区之间在器件纵向方向上有距离，电场截止区6由沿器件横向方向连续交替变换的重掺杂N型区和轻掺杂P型区组成；所述器件横向方向和器件纵向方向位于同一水平面且相互垂直。
上述方案为沟槽栅结构。
进一步的，所述电场截止区6中的重掺杂N型区域沿器件横向方向上的宽度均相等，所述电场截止区6中的轻掺杂P型区域沿器件横向方向上的宽度均相等。
一种逆导型IGBT，在N型高阻半导体材料表面形成若干个P型阱区1，在P型阱区表面沿器件横向方向并列形成N型发射区3和P型体接触区4，N型发射区3靠近P型阱区1边缘，P型体接触区4远离P型阱区1边缘,，二者的共同引出端为发射极电极，所述N型发射区3与P型阱区1边缘有间距；在两相邻P型阱区1中的两个相邻N型发射区3之间的半导体表面覆盖栅介质，栅介质表面覆盖导电材料形成平面栅结构，并引出栅电极；在N型高阻半导体材料的背面，由交替变换的N型区51和P型区52形成集电区，所述N型区51和P型区52的共同引出端为集电极电极；所述集电区的正上方具有电场截止区6，电场截止区6与集电区之间在器件纵向方向上有距离，电场截止区6由沿器件横向方向连续交替变换的重掺杂N型区和轻掺杂P型区组成。
上述方案为平面栅结构。
进一步的，电场截止区6中的重掺杂N型区域沿器件横向方向上的宽度均相等，轻掺杂P型区域沿器件横向方向上的宽度也相等。
本发明的有益效果为，相比传统逆导型IGBT，本发明的IGBT可消除负阻效应，且有效改善其正反向导通性能。
附图说明
图1是逆导型IGBT原理图；
图2是逆导型IGBT结构图；
图3是集电极电压回跳示意图；
图4是实施例1的结构示意图；
图5是实施例2的结构示意图；
图6是实施例3的结构示意图；
图7是实施例4的结构示意图。
具体实施方式
下面结合附图和实施例，详细描述本发明的技术方案：
实施例1，如图4所示，本例为沟槽栅逆导型IGBT。在N型高阻半导体材料表面形成P型区1，所述P型区表面沿器件横向方向并列交替形成N型发射区3和P型体接触区4。在N型发射区3中部形成贯穿P型区且底部与N型高阻半导体相接触的介质槽2，介质槽由位于槽内壁的绝缘介质层21和由绝缘介质层包围的导电材料22构成，由介质槽中的导电材料引出栅电极，形成槽栅结构；所述N型发射区和P型体接触区的共同引出端为发射极电极。在N型高阻半导体材料的背面，沿器件横向方向由连续交替变换的N型区51和P型区52形成集电区，所述N型和P型区的共同引出端为集电极。所述集电区的顶部引入电场截止区6，电场截止区与集电区之间在器件纵向方向上有距离，电场截止区由沿器件横向方向连续交替变换的重掺杂N型区和轻掺杂P型区组成。所述电场截止区6中的重掺杂N型区域沿器件横向方向上的宽度均相等，所述电场截止区6中的轻掺杂P型区域沿器件横向方向上的宽度均相等。
本例的工作原理为：
相比传统逆导型IGBT，本实施例利用连续交替变换的重掺杂N型区和轻掺杂P型区取代传统的连续N-buffer层，重掺杂N型区可以保证正向阻断时的电场截止作用，轻掺杂P型区则充当电子势垒，使器件在正向导通初期电子电流流经电场截止区下方的高阻路径，增大分布电阻，从而实现集电结更易开启，更易进入双极模式。
实施例2
如图5所示，本例为沟槽栅逆导型IGBT。本例与实施例1的不同之处在于，所述电场截止区6中的重掺杂N型区域沿器件横向方向上的宽度均相等，所述电场截止区6中的轻掺杂P型区域沿器件横向方向上的宽度不等(ΔL1，ΔL2，ΔL3，ΔL4，ΔL5)。
实施例3
如图6所示，本例为平面栅逆导型IGBT。在N型高阻半导体材料表面形成若干个P型阱区1，在P型阱区表面沿器件横向方向并列形成N型发射区3和P型体接触区4，N型发射区靠近P型阱区边缘,P型体接触区远离P型阱区边缘,二者的共同引出端为发射极电极，所述N型发射区与P型阱区边缘有间距。在两相邻P型阱区中的两个相邻N型发射区3之间的半导体表面覆盖栅介质，栅介质表面覆盖导电材料形成平面栅结构，并引出栅电极。在N型高阻半导体材料的背面，由交替变换的N型区51和P型区52形成集电区，所述N型和P型区的共同引出端为集电极电极。所述集电区的顶部引入电场截止区6，电场截止区与集电区之间在器件纵向方向上有距离，电场截止区由沿器件横向方向连续交替变换的重掺杂N型区和轻掺杂P型区组成。
实施例4
如图7所示，本例为平面栅逆导型IGBT。本例与实施例3的不同之处在于，所述电场截止区6中的重掺杂N型区域沿器件横向方向上的宽度均相等，所述电场截止区6中的轻掺杂P型区域沿器件横向方向上的宽度不等(ΔL1，ΔL2，ΔL3，ΔL4，ΔL5)。

Claims (2)

1.一种逆导型IGBT，在N型高阻半导体材料表面形成P型区(1)，所述P型区表面沿器件横向方向并列交替形成N型发射区(3)和P型体接触区(4)；在N型发射区(3)中部具有贯穿P型区(1)且底部与N型高阻半导体相接触的介质槽(2)，介质槽中具有位于槽内壁的绝缘介质层(21)和由绝缘介质层(21)包围的导电材料(22)，由介质槽中的导电材料(22)引出栅电极，形成槽栅结构；所述N型发射区(3)和P型体接触区(4)的共同引出端为发射极电极；在N型高阻半导体材料的背面，沿器件横向方向由连续交替变换的N型区(51)和P型区(52)形成集电区，所述N型区(51)和P型区(52)的共同引出端为集电极；所述集电区的正上方具有电场截止区(6)，电场截止区(6)与集电区之间在器件纵向方向上有距离，电场截止区(6)由沿器件横向方向连续交替变换的重掺杂N型区和轻掺杂P型区组成；所述重掺杂N型区用于保证正向阻断时的电场截止作用，轻掺杂P型区则充当电子势垒，使器件在正向导通初期电子电流流经电场截止区(6)下方的高阻路径，增大分布电阻；所述器件横向方向和器件纵向方向位于同一水平面且相互垂直。
2.根据权利要求1所述的一种逆导型IGBT，其特征在于，所述电场截止区(6)中的重掺杂N型区域沿器件横向方向上的宽度均相等，所述电场截止区(6)中的轻掺杂P型区域沿器件横向方向上的宽度均相等。
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