CN107731901B - 一种逆阻型igbt - Google Patents

一种逆阻型igbt Download PDF

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CN107731901B
CN107731901B CN201711155622.1A CN201711155622A CN107731901B CN 107731901 B CN107731901 B CN 107731901B CN 201711155622 A CN201711155622 A CN 201711155622A CN 107731901 B CN107731901 B CN 107731901B
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CN107731901A (zh
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罗小蓉
刘庆
黄琳华
魏杰
李聪
魏雨夕
苏伟
曾莉尧
曹厚华
莫日华
孙燕
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University of Electronic Science and Technology of China
Guangdong Electronic Information Engineering Research Institute of UESTC
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
    • H01L29/7398—Vertical transistors, e.g. vertical IGBT with both emitter and collector contacts in the same substrate side
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
    • H01L29/0623—Buried supplementary region, e.g. buried guard ring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
    • H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
    • H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT

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Abstract

本发明属于功率半导体技术领域，涉及一种逆阻型IGBT。本发明的器件，在正向电场截止层N1下表面形成间断高浓度P+集电区和浮空P1区，且P+集电区和浮空的P1被N1阻隔。施加反向阻断电压时，浮空的P1可辅助耗尽N1，降低高浓度的P+集电区/N1结面处高电场峰值，避免集电结发生提前击穿，最终反向耐压电场被N2以及槽结构共同截止；对器件施加正向阻断电压时，浮空的P1和漂移区被N1阻隔，高浓度的N1使正向电场被截止，耗尽区无法扩展到P1，正向耐压不会发生退化。相比于NPT型IGBT结构，可缩短漂移区厚度，实现导通压降和关断损耗更好的折中特性。

Description

一种逆阻型IGBT
技术领域
本发明属于功率半导体技术领域，涉及一种逆阻型IGBT(Insulated GateBipolar Transistor，绝缘栅双极型晶体管)。
背景技术
2001年，由富士电机研发出真正适用于交流变频应用的600V级垂直结构的逆阻型IGBT器件。该结构通过在P+衬底上外延100um厚的N型漂移区，形成NPT型IGBT实现正向和反向耐压。直至2014年，逆阻型IGTB对结构上的改进主要体现在终端区的设计，旨在器件承受反向耐压时，降低由耗尽线扩展至划片区引起的泄露电流，而器件的元胞区仍为NPT结构。
逆阻型IGBT因具有正反对称的阻断能力，在基于矩阵变换器交流-交流(AC-AC)应用领域备受亲睐。作为交流-交流(AC-AC)矩阵逆变器中的核心元件，逆阻型IGBT解决了常规IGBT无法承受高的反向电压的困扰，不需要外串联高压二极管来承受外部的反向电压，减小了矩阵逆变器中所需的元器件数量，同时减小了因外串联二极管带来的额外导通能力损耗。
常规FS型IGBT在正向耐压时，高浓度的FS层可有效截止正向耐压电场，但在反向阻断状态下，底部较高浓度的FS层和高浓度的P+集电极之间会形成高电场峰值，在漂移区还未耗尽条件下，FS层和P+集电区之间的反偏结发生提前击穿，无法满足双向耐压的应用场合。NPT型IGBT可实现双向耐压，但需要较大厚度的漂移区，引起正向导通压降增大；同时，在关断状态下，由于厚的漂移区不能被全耗尽，非耗尽区内的载流子需要通过自身复合，产生较大的拖尾电流，同时器件的关断能量损耗增大，导致器件的导通压降和关断损耗折中性能退化。
发明内容：
本发明所要解决的，是针对上述问题提出一种逆阻型IGBT。
本发明的技术方案是：一种逆阻型IGBT，包括N型高阻区，其特征在于，在N型高阻区上表面中部具有第二N型区6，位于第二N型区6上表面的P阱1，并列位于P阱1上表面的N型发射区2和P型接触区3；其中N型发射区2和P型接触区3相互独立，其共同引出端为发射极；N型高阻区上表面两侧具有两个对称的沟槽，与N型发射区2接触的沟槽为槽栅4，槽栅4包含位于槽内壁的第一绝缘介质层41和由第一绝缘介质层41包围的第一导电材料42，由槽栅4中的第一导电材料42引出栅电极；与P型接触区3接触的沟槽为槽结构5，槽结构5包含位于槽内壁的第二绝缘介质层51和由第二绝缘介质层51包围的第二导电材料52；
在N型高阻区下表面具有第一N型层7，所述第一N型层7的下层具有多个不连续的P+集电区8，P+集电区8的掺杂浓度高于N型高阻区的掺杂浓度，P+集电区8的引出端为集电极；在相邻的2个P+集电区8之间的第一N型层7中，具有P型层9。
本发明的有益效果为，可实现正向同等的耐压能力，避免了FS型IGBT反向阻断耐压情况下提前击穿的缺陷，同时能在更薄的漂移区下获得双向耐压，相对于NPT型IGBT结构，有更好的导通压降和关断损耗的折中性能。
附图说明
图1是实施例1的结构示意图；
具体实施方式
下面结合附图和实施例，详细描述本发明的技术方案：
实施例1，如图1所示，本例为一种逆阻型IGBT，包括N型高阻区，在N型高阻区上表面中部具有第二N型区6，位于第二N型区6上表面的P阱1，并列位于P阱1上表面的N型发射区2和P型接触区3；其中N型发射区2和P型接触区3相互独立，其共同引出端为发射极；N型高阻区上表面两侧具有两个对称的沟槽，与N型发射区2接触的沟槽为槽栅4，槽栅4包含位于槽内壁的第一绝缘介质层41和由第一绝缘介质层41包围的第一导电材料42，由槽栅4中的第一导电材料42引出栅电极；与P型接触区3接触的沟槽为槽结构5，槽结构5包含位于槽内壁的第二绝缘介质层51和由第二绝缘介质层51包围的第二导电材料52；
在N型高阻区下表面具有第一N型层7，所述第一N型层7的下层具有多个不连续的P+集电区8，P+集电区8的掺杂浓度高于N型高阻区的掺杂浓度，P+集电区8的引出端为集电极；在相邻的2个P+集电区8之间的第一N型层7中，具有P型层9。
本例的工作原理为：
对新结构施加反向阻断电压时，浮空的P1可辅助耗尽N1，降低高浓度P+集电区/N1结面处高电场峰值，避免集电结发生提前击穿，最终反向耐压电场被N2以及槽结构共同截止；对器件施加正向阻断电压时，浮空的P1和漂移区被N1阻隔，高浓度的N1使正向电场被截止，耗尽区无法扩展到P1，正向耐压不会发生退化。相比于NPT型IGBT结构，在N1、N2以及槽结构共同作用下，可缩短漂移区厚度，实现导通压降和关断损耗更好的折中特性。

Claims (1)

1.一种逆阻型IGBT，包括N型高阻区，其特征在于，在N型高阻区上表面中部具有第二N型区(6)，位于第二N型区(6)上表面的P阱(1)，并列位于P阱(1)上表面的N型发射区(2)和P型接触区(3)；其中N型发射区(2)和P型接触区(3)相互独立，其共同引出端为发射极；N型高阻区上表面两侧具有两个对称的沟槽，与N型发射区(2)接触的沟槽为槽栅(4)，槽栅(4)包含位于槽内壁的第一绝缘介质层(41)和由第一绝缘介质层(41)包围的第一导电材料(42)，由槽栅(4)中的第一导电材料(42)引出栅电极；与P型接触区(3)接触的沟槽为槽结构(5)，槽结构(5)包含位于槽内壁的第二绝缘介质层(51)和由第二绝缘介质层(51)包围的第二导电材料(52)；
在N型高阻区下表面具有第一N型层(7)，所述第一N型层(7)的下层具有多个不连续的P+集电区(8)，P+集电区(8)的掺杂浓度高于N型高阻区的掺杂浓度，P+集电区(8)的引出端为集电极；在相邻的2个P+集电区(8)之间的第一N型层(7)中，具有P型层(9)，施加反向阻断电压时，浮空的P型层(9)可辅助耗尽第一N型层(7)，降低高浓度P+集电区(8)和第一N型层(7)结面处高电场峰值，避免集电结发生提前击穿，最终反向耐压电场被第二N型区(6)以及槽结构(5)共同截止；对器件施加正向阻断电压时，浮空的P型层(9)和漂移区被第一N型层(7)阻隔，高浓度的第一N型层(7)使正向电场被截止，耗尽区无法扩展到P型层(9)，正向耐压不会发生退化。
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CN207409496U (zh) * 2017-11-20 2018-05-25 电子科技大学 一种逆阻型igbt

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WO2012157772A1 (ja) * 2011-05-18 2012-11-22 富士電機株式会社 半導体装置および半導体装置の製造方法
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002076017A (ja) * 2000-08-28 2002-03-15 Fuji Electric Co Ltd 半導体装置
JP2003303965A (ja) * 2002-04-09 2003-10-24 Toshiba Corp 半導体素子及びその製造方法
JP2006237553A (ja) * 2004-09-02 2006-09-07 Fuji Electric Holdings Co Ltd 半導体装置およびその製造方法
CN104221152A (zh) * 2012-07-18 2014-12-17 富士电机株式会社 半导体装置以及半导体装置的制造方法
CN102842612A (zh) * 2012-09-11 2012-12-26 电子科技大学 具有埋岛结构的绝缘栅双极型晶体管
CN103258847A (zh) * 2013-05-09 2013-08-21 电子科技大学 一种双面场截止带埋层的rb-igbt器件
CN105870178A (zh) * 2016-04-26 2016-08-17 电子科技大学 一种双向igbt器件及其制造方法
CN106206679A (zh) * 2016-08-31 2016-12-07 电子科技大学 一种逆导型igbt
CN207409496U (zh) * 2017-11-20 2018-05-25 电子科技大学 一种逆阻型igbt

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