CN102683402A - 一种平面栅电荷存储型igbt - Google Patents
一种平面栅电荷存储型igbt Download PDFInfo
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- CN102683402A CN102683402A CN2012101230054A CN201210123005A CN102683402A CN 102683402 A CN102683402 A CN 102683402A CN 2012101230054 A CN2012101230054 A CN 2012101230054A CN 201210123005 A CN201210123005 A CN 201210123005A CN 102683402 A CN102683402 A CN 102683402A
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- 230000005684 electric field Effects 0.000 claims abstract description 14
- 239000004065 semiconductor Substances 0.000 claims abstract description 8
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 5
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 5
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 3
- 238000009792 diffusion process Methods 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 229910002601 GaN Inorganic materials 0.000 claims 1
- 230000002411 adverse Effects 0.000 abstract description 4
- 239000000654 additive Substances 0.000 abstract 1
- 230000000996 additive effect Effects 0.000 abstract 1
- 238000012216 screening Methods 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 4
- 238000005457 optimization Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Thin Film Transistor (AREA)
Abstract
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Claims (6)
Priority Applications (1)
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CN201210123005.4A CN102683402B (zh) | 2012-04-24 | 2012-04-24 | 一种平面栅电荷存储型igbt |
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CN201210123005.4A CN102683402B (zh) | 2012-04-24 | 2012-04-24 | 一种平面栅电荷存储型igbt |
Publications (2)
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CN102683402A true CN102683402A (zh) | 2012-09-19 |
CN102683402B CN102683402B (zh) | 2015-08-19 |
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CN201210123005.4A Expired - Fee Related CN102683402B (zh) | 2012-04-24 | 2012-04-24 | 一种平面栅电荷存储型igbt |
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Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102969351A (zh) * | 2012-12-07 | 2013-03-13 | 株洲南车时代电气股份有限公司 | 一种平面栅型igbt芯片 |
CN103165678A (zh) * | 2013-03-12 | 2013-06-19 | 电子科技大学 | 一种超结ldmos器件 |
CN103794638A (zh) * | 2012-10-26 | 2014-05-14 | 中国科学院微电子研究所 | 一种igbt器件及其制作方法 |
CN103855197A (zh) * | 2012-11-29 | 2014-06-11 | 中国科学院微电子研究所 | 一种igbt器件及其形成方法 |
CN104616989A (zh) * | 2013-11-04 | 2015-05-13 | 无锡华润上华半导体有限公司 | 一种具有载流电子存储层的igbt的制造方法 |
CN105140279A (zh) * | 2015-09-14 | 2015-12-09 | 江苏物联网研究发展中心 | 具备载流子存储的平面栅igbt器件 |
CN105226089A (zh) * | 2015-10-29 | 2016-01-06 | 株洲南车时代电气股份有限公司 | 一种igbt芯片及其制作方法 |
CN105845718A (zh) * | 2016-05-19 | 2016-08-10 | 杭州电子科技大学 | 一种4H-SiC沟槽型绝缘栅双极型晶体管 |
CN105870179A (zh) * | 2016-04-26 | 2016-08-17 | 电子科技大学 | 一种沟槽栅电荷存储型rc-igbt及其制造方法 |
CN106033770A (zh) * | 2015-03-18 | 2016-10-19 | 江苏物联网研究发展中心 | 绝缘栅双极型晶体管及其制作方法 |
CN110504310A (zh) * | 2019-08-29 | 2019-11-26 | 电子科技大学 | 一种具有自偏置pmos的ret igbt及其制作方法 |
CN113421919A (zh) * | 2021-05-28 | 2021-09-21 | 广东美的白色家电技术创新中心有限公司 | 绝缘栅双极型晶体管、制作方法、功率器件及电子设备 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101499422A (zh) * | 2008-12-12 | 2009-08-05 | 北京工业大学 | 用多晶硅做寿命控制层的内透明集电极igbt制造方法 |
CN101694850A (zh) * | 2009-10-16 | 2010-04-14 | 电子科技大学 | 一种具有p型浮空层的载流子存储槽栅igbt |
CN102306657A (zh) * | 2011-10-13 | 2012-01-04 | 电子科技大学 | 一种具有浮空埋层的绝缘栅双极型晶体管 |
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2012
- 2012-04-24 CN CN201210123005.4A patent/CN102683402B/zh not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101499422A (zh) * | 2008-12-12 | 2009-08-05 | 北京工业大学 | 用多晶硅做寿命控制层的内透明集电极igbt制造方法 |
CN101694850A (zh) * | 2009-10-16 | 2010-04-14 | 电子科技大学 | 一种具有p型浮空层的载流子存储槽栅igbt |
CN102306657A (zh) * | 2011-10-13 | 2012-01-04 | 电子科技大学 | 一种具有浮空埋层的绝缘栅双极型晶体管 |
Cited By (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103794638A (zh) * | 2012-10-26 | 2014-05-14 | 中国科学院微电子研究所 | 一种igbt器件及其制作方法 |
CN103855197A (zh) * | 2012-11-29 | 2014-06-11 | 中国科学院微电子研究所 | 一种igbt器件及其形成方法 |
CN103855197B (zh) * | 2012-11-29 | 2016-12-21 | 中国科学院微电子研究所 | 一种igbt器件及其形成方法 |
CN102969351B (zh) * | 2012-12-07 | 2015-07-08 | 株洲南车时代电气股份有限公司 | 一种平面栅型igbt芯片 |
CN102969351A (zh) * | 2012-12-07 | 2013-03-13 | 株洲南车时代电气股份有限公司 | 一种平面栅型igbt芯片 |
CN103165678B (zh) * | 2013-03-12 | 2015-04-15 | 电子科技大学 | 一种超结ldmos器件 |
CN103165678A (zh) * | 2013-03-12 | 2013-06-19 | 电子科技大学 | 一种超结ldmos器件 |
CN104616989A (zh) * | 2013-11-04 | 2015-05-13 | 无锡华润上华半导体有限公司 | 一种具有载流电子存储层的igbt的制造方法 |
CN104616989B (zh) * | 2013-11-04 | 2017-08-25 | 无锡华润上华半导体有限公司 | 一种具有载流电子存储层的igbt的制造方法 |
CN106033770A (zh) * | 2015-03-18 | 2016-10-19 | 江苏物联网研究发展中心 | 绝缘栅双极型晶体管及其制作方法 |
CN105140279A (zh) * | 2015-09-14 | 2015-12-09 | 江苏物联网研究发展中心 | 具备载流子存储的平面栅igbt器件 |
CN105140279B (zh) * | 2015-09-14 | 2018-07-31 | 江苏物联网研究发展中心 | 具备载流子存储的平面栅igbt器件 |
CN105226089A (zh) * | 2015-10-29 | 2016-01-06 | 株洲南车时代电气股份有限公司 | 一种igbt芯片及其制作方法 |
CN105870179A (zh) * | 2016-04-26 | 2016-08-17 | 电子科技大学 | 一种沟槽栅电荷存储型rc-igbt及其制造方法 |
CN105870179B (zh) * | 2016-04-26 | 2019-01-01 | 电子科技大学 | 一种沟槽栅电荷存储型rc-igbt及其制造方法 |
CN105845718A (zh) * | 2016-05-19 | 2016-08-10 | 杭州电子科技大学 | 一种4H-SiC沟槽型绝缘栅双极型晶体管 |
CN105845718B (zh) * | 2016-05-19 | 2019-11-05 | 杭州电子科技大学 | 一种4H-SiC沟槽型绝缘栅双极型晶体管 |
CN110504310A (zh) * | 2019-08-29 | 2019-11-26 | 电子科技大学 | 一种具有自偏置pmos的ret igbt及其制作方法 |
CN110504310B (zh) * | 2019-08-29 | 2021-04-20 | 电子科技大学 | 一种具有自偏置pmos的ret igbt及其制作方法 |
CN113421919A (zh) * | 2021-05-28 | 2021-09-21 | 广东美的白色家电技术创新中心有限公司 | 绝缘栅双极型晶体管、制作方法、功率器件及电子设备 |
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CN102683402B (zh) | 2015-08-19 |
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