CN102683403B - 一种沟槽栅电荷存储型igbt - Google Patents
一种沟槽栅电荷存储型igbt Download PDFInfo
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- CN102683403B CN102683403B CN201210123366.9A CN201210123366A CN102683403B CN 102683403 B CN102683403 B CN 102683403B CN 201210123366 A CN201210123366 A CN 201210123366A CN 102683403 B CN102683403 B CN 102683403B
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- charge storage
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- trench gate
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- 238000003860 storage Methods 0.000 title claims abstract description 85
- 230000005684 electric field Effects 0.000 claims abstract description 14
- 229910052751 metal Inorganic materials 0.000 claims description 24
- 239000002184 metal Substances 0.000 claims description 24
- 239000003989 dielectric material Substances 0.000 claims description 16
- 239000004020 conductor Substances 0.000 claims description 4
- 230000000694 effects Effects 0.000 abstract description 8
- 239000004065 semiconductor Substances 0.000 abstract description 7
- 230000015556 catabolic process Effects 0.000 abstract description 6
- 239000000969 carrier Substances 0.000 abstract 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000005457 optimization Methods 0.000 description 4
- 229910010271 silicon carbide Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000002411 adverse Effects 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
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- 230000009286 beneficial effect Effects 0.000 description 1
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- 238000005516 engineering process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201210123366.9A CN102683403B (zh) | 2012-04-24 | 2012-04-24 | 一种沟槽栅电荷存储型igbt |
Applications Claiming Priority (1)
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CN201210123366.9A CN102683403B (zh) | 2012-04-24 | 2012-04-24 | 一种沟槽栅电荷存储型igbt |
Publications (2)
Publication Number | Publication Date |
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CN102683403A CN102683403A (zh) | 2012-09-19 |
CN102683403B true CN102683403B (zh) | 2015-05-27 |
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CN201210123366.9A Expired - Fee Related CN102683403B (zh) | 2012-04-24 | 2012-04-24 | 一种沟槽栅电荷存储型igbt |
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CN (1) | CN102683403B (zh) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2014086013A1 (zh) * | 2012-12-06 | 2014-06-12 | 中国科学院微电子研究所 | Igbt及其元胞结构、以及igbt的形成方法 |
US9269779B2 (en) * | 2014-07-21 | 2016-02-23 | Semiconductor Components Industries, Llc | Insulated gate semiconductor device having a shield electrode structure |
TWI520343B (zh) * | 2014-08-20 | 2016-02-01 | 敦南科技股份有限公司 | 雙溝槽式的功率半導體元件及其製造方法 |
US9590096B2 (en) * | 2014-12-15 | 2017-03-07 | Infineon Technologies Americas Corp. | Vertical FET having reduced on-resistance |
CN105140279B (zh) * | 2015-09-14 | 2018-07-31 | 江苏物联网研究发展中心 | 具备载流子存储的平面栅igbt器件 |
CN105870179B (zh) * | 2016-04-26 | 2019-01-01 | 电子科技大学 | 一种沟槽栅电荷存储型rc-igbt及其制造方法 |
CN105789290B (zh) * | 2016-04-26 | 2018-10-23 | 电子科技大学 | 一种沟槽栅igbt器件及其制造方法 |
CN105845718B (zh) * | 2016-05-19 | 2019-11-05 | 杭州电子科技大学 | 一种4H-SiC沟槽型绝缘栅双极型晶体管 |
DE112017003667B4 (de) * | 2016-07-19 | 2022-03-17 | Mitsubishi Electric Corporation | Halbleitereinheit und Verfahren zur Herstellung einer Halbleitereinheit |
CN106683989A (zh) * | 2016-12-29 | 2017-05-17 | 江苏中科君芯科技有限公司 | 沟槽igbt器件及其制造方法 |
CN107799582B (zh) * | 2017-10-20 | 2021-03-16 | 电子科技大学 | 一种沟槽栅电荷储存型绝缘栅双极型晶体管及其制造方法 |
CN108122964B (zh) * | 2017-12-22 | 2020-06-16 | 中国科学院微电子研究所 | 一种绝缘栅双极晶体管 |
CN108321192B (zh) * | 2018-02-05 | 2020-08-28 | 电子科技大学 | 一种双向沟槽栅电荷存储型igbt及其制作方法 |
CN109065621B (zh) * | 2018-08-29 | 2020-08-14 | 电子科技大学 | 一种绝缘栅双极晶体管及其制备方法 |
CN109728084B (zh) * | 2018-12-04 | 2021-02-02 | 电子科技大学 | 一种具有深槽电场屏蔽结构的平面栅igbt器件 |
CN110504310B (zh) * | 2019-08-29 | 2021-04-20 | 电子科技大学 | 一种具有自偏置pmos的ret igbt及其制作方法 |
CN110504260B (zh) * | 2019-08-29 | 2022-11-04 | 电子科技大学 | 一种具有自偏置pmos的横向沟槽型igbt及其制备方法 |
CN111668312B (zh) * | 2020-06-15 | 2023-08-04 | 东南大学 | 一种低导通电阻的沟槽碳化硅功率器件及其制造工艺 |
CN112510082A (zh) * | 2020-12-09 | 2021-03-16 | 电子科技大学 | 一种具有沟槽发射极埋层的igbt结构 |
CN113130627B (zh) * | 2021-04-13 | 2022-08-23 | 电子科技大学 | 一种集成沟道二极管的碳化硅鳍状栅mosfet |
CN113517354B (zh) * | 2021-04-29 | 2023-04-28 | 电子科技大学 | 一种高压jfet器件 |
Citations (6)
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US6001678A (en) * | 1995-03-14 | 1999-12-14 | Mitsubishi Denki Kabushiki Kaisha | Insulated gate semiconductor device |
US6147381A (en) * | 1997-02-25 | 2000-11-14 | Infineon Technologies Ag | Field effect-controllable semiconductor component |
CN101133497A (zh) * | 2005-03-03 | 2008-02-27 | 富士电机控股株式会社 | 半导体器件及其制造方法 |
CN101694850A (zh) * | 2009-10-16 | 2010-04-14 | 电子科技大学 | 一种具有p型浮空层的载流子存储槽栅igbt |
CN102306657A (zh) * | 2011-10-13 | 2012-01-04 | 电子科技大学 | 一种具有浮空埋层的绝缘栅双极型晶体管 |
CN102376709A (zh) * | 2010-08-17 | 2012-03-14 | 株式会社电装 | 半导体器件 |
-
2012
- 2012-04-24 CN CN201210123366.9A patent/CN102683403B/zh not_active Expired - Fee Related
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6001678A (en) * | 1995-03-14 | 1999-12-14 | Mitsubishi Denki Kabushiki Kaisha | Insulated gate semiconductor device |
US6147381A (en) * | 1997-02-25 | 2000-11-14 | Infineon Technologies Ag | Field effect-controllable semiconductor component |
CN101133497A (zh) * | 2005-03-03 | 2008-02-27 | 富士电机控股株式会社 | 半导体器件及其制造方法 |
CN101694850A (zh) * | 2009-10-16 | 2010-04-14 | 电子科技大学 | 一种具有p型浮空层的载流子存储槽栅igbt |
CN102376709A (zh) * | 2010-08-17 | 2012-03-14 | 株式会社电装 | 半导体器件 |
CN102306657A (zh) * | 2011-10-13 | 2012-01-04 | 电子科技大学 | 一种具有浮空埋层的绝缘栅双极型晶体管 |
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CN102683403A (zh) | 2012-09-19 |
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